氦离子束图形化高Tc铜氧化物纳米收缩器件的光学纳米观察
Optical Nanoscopy of High-Tc Cuprate Nano-Constriction Devices Patterned by Helium Ion Beams
摘要：
聚焦到亚纳米尺度的氦离子束（HIB）已经成为高分辨率成像以及纳米尺度光刻、离子铣削或沉积的强大工具。量化辐照效应对于可靠的器件制造是必不可少的，但大多数深度分布信息是由计算机模拟而不是实验提供的。在这里，我们使用原子力显微镜（AFM）结合扫描近场光学显微镜（SNOM）提供三维（3D）的介电特性的高温超导体设备制造的HIB。通过对红外介电响应成像，我们发现由标称0.5 nm HIB引起的非晶化延伸遍及铜氧化物膜的整个26.5 nm厚度，并且横向延伸约500 nm。这种意外广泛的结构和电子损坏可归因于内部设备界面大幅改变的氦气深度分布。我们的研究介绍了AFM-SNOM作为一种定量的纳米级断层扫描技术，用于各种各样的设备中的辐射损伤的非侵入性3D表征。
英文摘要：
Helium-ion beams (HIB) focused to sub-nanometer scales have emerged as powerful tools for high-resolution imaging as well as nano-scale lithography, ion milling or deposition. Quantifying irradiation effects is essential for reliable device fabrication but most of the depth profiling information is provided by computer simulations rather than experiment. Here, we use atomic force microscopy (AFM) combined with scanning near-field optical microscopy (SNOM) to provide three-dimensional (3D) dielectric characterization of high-temperature superconductor devices fabricated by HIB. By imaging the infrared dielectric response we find that amorphization caused by the nominally 0.5 nm HIB extends throughout the entire 26.5 nm thickness of the cuprate film and by about 500 nm laterally. This unexpectedly widespread structural and electronic damage can be attributed to a Helium depth distribution substantially modified by internal device interfaces. Our study introduces AFM-SNOM as a quantitative nano-scale tomographic technique for non-invasive 3D characterization of irradiation damage in a wide variety of devices.
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