利用AFM纳米光刻制备的双层石墨烯纳米收缩结构中的电子输运
Electron transport in bilayer graphene nano constrictions patterned using AFM nanolithography
AI总结：
本研究采用无电极AFM局部阳极氧化纳米光刻制备窄至20nm的双层石墨烯纳米收缩结构，观测到输运带隙与附加能超100meV的单量子点，揭示其输运由边缘无序与量子限域效应主导，为碳基量子器件制备提供了灵活新方法。
摘要：
本文报道了采用无电极基于AFM的局部阳极氧化（LAO）纳米光刻技术制备的封装双层石墨烯纳米收缩结构的低温输运测量结果。该技术可制备窄至20 nm的收缩结构，远小于此前研究中的尺寸。在较宽的收缩结构中，我们观测到体输运特征；但随着收缩结构宽度减小，会出现输运带隙。在最窄的收缩结构中观测到单量子点（QD）形成，其附加能超过100 meV，超过了此前图案化量子点的实验结果。我们的结果表明，通过这些窄收缩结构的输运由边缘无序结合量子限域效应主导。本研究发现，无电极AFM-LAO光刻是一种简便灵活的制备具有可调电子特性纳米结构的方法，无需依赖电子束光刻等图案化技术。该技术出色的可控性和可重复性为碳基量子电子学和自旋电子学开辟了令人振奋的机遇。
英文摘要：
Here we report on low temperature transport measurements of encapsulated bilayer graphene nano constrictions fabricated employing electrode-free AFM-based local anodic oxidation (LAO) nanolithography. This technique allows for the creation of constrictions as narrow as 20 nm much smaller than previous studies. In wider constrictions, we observe bulk transport characteristics. However, as the constriction's width is reduced, a transport gap appears. Single quantum dot (QD) formation is observed within the narrowest constriction with addition energies exceeding 100 meV, which surpass previous experiments on patterned QDs. Our results suggest that transport through these narrow constrictions is governed by edge disorder combined with quantum confinement effects. Our findings introduce electrode-free AFM-LAO lithography as an easy and flexible method for creating nanostructures with tunable electronic properties without relying on patterning techniques such as e-beam lithography. The excellent control and reproducibility provided by this technique opens exciting opportunities for carbon-based quantum electronics and spintronics.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
