arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2209.07765physics.ins-det
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新型nEXO真空紫外敏感硅光倍增器的性能

Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO

G. Gallina, Y. Guan, F. Retiere, G. Cao, A. Bolotnikov, I. Kotov, S. Rescia, A. K. Soma, T. Tsang, L. Darroch, T. Brunner, J. Bolster, J. R. Cohen, T. Pinto Fra… 展开作者

G. Gallina, Y. Guan, F. Retiere, G. Cao, A. Bolotnikov, I. Kotov, S. Rescia, A. K. Soma, T. Tsang, L. Darroch, T. Brunner, J. Bolster, J. R. Cohen, T. Pinto Franco, W. C. Gillis, H. Peltz Smalley, S. Thibado, A. Pocar, A. Bhat, A. Jamil, D. C. Moore, G. Adhikari, S. Al Kharusi, E. Angelico, I. J. Arnquist, P. Arsenault, I. Badhrees, J. Bane, V. Belov, E. P. Bernard, T. Bhatta, J. P. Brodsky, E. Brown, E. Caden, L. Cao, C. Chambers, B. Chana, S. A. Charlebois, D. Chernyak, M. Chiu, B. Cleveland, R. Collister, M. Cvitan, J. Dalmasson, T. Daniels, K. Deslandes, R. DeVoe, M. L. di Vacri, Y. Ding, M. J. Dolinski, A. Dragone, J. Echevers, B. Eckert, M. Elbeltagi, L. Fabris, W. Fairbank, J. Farine, Y. S. Fu, D. Gallacher, P. Gautam, G. Giacomini, C. Gingras, D. Goeldi, R. Gornea, G. Gratta, C. A. Hardy, S. Hedges, M. Heffner, E. Hein, J. Holt, E. W. Hoppe, J. Hößl, A. House, W. Hunt, A. Iverson, X. S. Jiang, A. Karelin, L. J. Kaufman, R. Krücken, A. Kuchenkov, K. S. Kumar, A. Larson, K. G. Leach, B. G. Lenardo, D. S. Leonard, G. Lessard, G. Li, S. Li, Z. Li, C. Licciardi, R. Lindsay, R. MacLellan, M. Mahtab, S. Majidi, C. Malbrunot, P. Margetak, P. Martel-Dion, L. Martin, J. Masbou, N. Massacret, K. McMichael, B. Mong, K. Murray, J. Nattress, C. R. Natzke, X. E. Ngwadla, J. C. Nzobadila Ondze, A. Odian, J. L. Orrell, G. S. Ortega, C. T. Overman, S. Parent, A. Perna, A. Piepke, N. Pletskova, J. F. Pratte, V. Radeka, E. Raguzin, G. J. Ramonnye, T. Rao, H. Rasiwala, K. Raymond, B. M. Rebeiro, G. Richardson, J. Ringuette, V. Riot, T. Rossignol, P. C. Rowson, L. Rudolph, R. Saldanha, S. Sangiorgio, X. Shang, F. Spadoni, V. Stekhanov, X. L. Sun, A. Tidball, T. Totev, S. Triambak, R. H. M. Tsang, O. A. Tyuka, F. Vachon, M. Vidal, S. Viel, G. Visser, M. Wagenpfeil, M. Walent, K. Wamba, Q. Wang, W. Wang, Y. Wang, M. Watts, W. Wei, L. J. Wen, U. Wichoski, S. Wilde, M. Worcester, W. H. Wu, X. Wu, L. Xie, W. Yan, H. Yang, L. Yang, O. Zeldovich, J. Zhao, T. Ziegler

摘要:

液体氙时间投影室由于其响应均匀性、单片灵敏体积、对大靶质量的可扩展性和对极低背景操作的适用性,是寻找无中微子双β衰变(0 $νββ$)的有希望的探测器。nEXO合作设计了一个吨级时间投影室,旨在寻找\ce{^{136}Xe}的0 $νββ$,预计半衰期灵敏度为$1.35\times 10^{28}$ ~yr。为了达到这种灵敏度,nEXO的设计目标是在$Q$衰减值($2458.07\pm 0.31$ ~keV)下$\leq$ 1\%的能量分辨率。达到这一分辨率需要有效收集检测器中产生的电离和闪烁。nEXO设计采用硅光电倍增器(SiPM)来检测液体氙的真空紫外线、175 nm闪烁光。本文报告了专门为nEXO设计的最新真空紫外线敏感的布鲁诺·凯斯勒基金会VUVHD 3 SiPM的特性,以及对先前表征的滨松VUV 4多像素光子计数器(MPPC)的新测试样品的新测量。在163 K的温度下,测量了SiPM和MPPC的暗噪声、增益、直接串扰、相关雪崩和光子探测效率等参量随外加电压和波长的变化。本研究的结果用于提供nEXO设计在衰减$Q$值下可实现的能量分辨率的更新估计值。

英文摘要:

Liquid xenon time projection chambers are promising detectors to search for neutrinoless double beta decay (0$νββ$), due to their response uniformity, monolithic sensitive volume, scalability to large target masses, and suitability for extremely low background operations. The nEXO collaboration has designed a tonne-scale time projection chamber that aims to search for 0$νββ$ of \ce{^{136}Xe} with projected half-life sensitivity of $1.35\times 10^{28}$~yr. To reach this sensitivity, the design goal for nEXO is $\leq$1\% energy resolution at the decay $Q$-value ($2458.07\pm 0.31$~keV). Reaching this resolution requires the efficient collection of both the ionization and scintillation produced in the detector. The nEXO design employs Silicon Photo-Multipliers (SiPMs) to detect the vacuum ultra-violet, 175 nm scintillation light of liquid xenon. This paper reports on the characterization of the newest vacuum ultra-violet sensitive Fondazione Bruno Kessler VUVHD3 SiPMs specifically designed for nEXO, as well as new measurements on new test samples of previously characterised Hamamatsu VUV4 Multi Pixel Photon Counters (MPPCs). Various SiPM and MPPC parameters, such as dark noise, gain, direct crosstalk, correlated avalanches and photon detection efficiency were measured as a function of the applied over voltage and wavelength at liquid xenon temperature (163~K). The results from this study are used to provide updated estimates of the achievable energy resolution at the decay $Q$-value for the nEXO design.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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