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arXiv 2104.07997physics.ins-det
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真空紫外敏感硅光电倍增器在液体氙中的反射率

Reflectivity of VUV-sensitive Silicon Photomultipliers in Liquid Xenon

M. Wagenpfeil, T. Ziegler, J. Schneider, A. Fieguth, M. Murra, D. Schulte, L. Althueser, C. Huhmann, C. Weinheimer, T. Michel, G. Anton, G. Adhikari, S. Al Khar… 展开作者

M. Wagenpfeil, T. Ziegler, J. Schneider, A. Fieguth, M. Murra, D. Schulte, L. Althueser, C. Huhmann, C. Weinheimer, T. Michel, G. Anton, G. Adhikari, S. Al Kharusi, E. Angelico, I. J. Arnquist, I. Badhrees, J. Bane, D. Beck, V. Belov, T. Bhatta, A. Bolotnikov, P. A. Breur, J. P. Brodsky, E. Brown, T. Brunner, E. Caden, G. F. Cao, C. Chambers, B. Chana, S. A. Charlebois, D. Chernyak, M. Chiu, B. Cleveland, A. Craycraft, T. Daniels, L. Darroch, A. Der Mesrobian-Kabakian, A. de St Croix, K. Deslandes, R. DeVoe, M. L. Di Vacri, M. J. Dolinski, J. Echevers, M. Elbeltagi, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Ferrara, S. Feyzbakhsh, G. Gallina, P. Gautam, G. Giacomini, C. Gingras, D. Goeldi, A. Gorham, R. Gornea, G. Gratta, E. V. Hansen, C. A. Hardy, K. Harouaka, M. Heffner, E. W. Hoppe, A. House, M. Hughes, A. Iverson, A. Jamil, M. Jewell, A. Karelin, L. J. Kaufman, R. Krücken, A. Kuchenkov, K. S. Kumar, Y. Lan, A. Larson, K. G. Leach, D. S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, R. Lindsay, R. MacLellan, P. Martel-Dion, N. Massacret, T. McElroy, M. Medina Peregrina, B. Mong, D. C. Moore, K. Murray, J. Nattress, C. R. Natzke, R. J. Newby, F. Nolet, O. Nusair, J. C. Nzobadila Ondze, K. Odgers, A. Odian, J. L. Orrell, G. S. Ortega, I. Ostrovskiy, C. T. Overman, S. Parent, A. Piepke, A. Pocar, J. -F. Pratte, E. Raguzin, G. J. Ramonnye, H. Rasiwala, S. Rescia, F. Retière, C. Richard, M. Richman, J. Ringuette, A. Robinson, T. Rossignol, P. C. Rowson, N. Roy, R. Saldanha, S. Sangiorgio, A. K. Soma, F. Spadoni, V. Stekhanov, T. Stiegler, M. Tarka, S. Thibado, A. Tidball, J. Todd, T. Totev, S. Triambak, R. Tsang, F. Vachon, V. Veeraraghavan, S. Viel, C. Vivo-Vilches, M. Walent, U. Wichoski, M. Worcester, S. X. Wu, Q. Xia, W. Yan, L. Yang, O. Zeldovich

摘要:

硅光电倍增器被认为是一种非常有前途的技术,可用于粒子物理学低本底实验的下一代尖端探测器。本文介绍了硅光电倍增器(SiPM)和其它样品在真空紫外(VUV)波长下的液态氙中的反射率的系统研究。使用明斯特大学的专用装置,可以以0.45°角分辨率获得浸入液体氙中的各种样品的角分辨反射测量。在这项工作中研究了四个样品:一个Hamamatsu VUV 4 SiPM,一个FBK VUV-HD SiPM,一个FBK晶片样品和一个来自EXO-200的大面积雪崩光电二极管(LA-APD)。对于四个样品,在20°入射角下的反射率被确定为25-36%,并且对于LA-APD和FBK样品,在70°下增加到高达65%。Hamamatsu VUV 4 SiPM显示出随着入射角的增加而下降。反射率结果将被纳入即将到来的nEXO探测器的光响应模拟。

英文摘要:

Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36% at an angle of incidence of 20° for the four samples and increases to up to 65% at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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