Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet, the conceptual link between the interaction-driven Mott transition and the finite-doping behavior lacks a clear connection with the theory of critical phenomena. In a prototypical case of a first-order Mott transition the surface associated with the equation of state for the homogeneous system is "folded" so that in a range of parameters stable metallic and insulating phases exist and are connected by an unstable metallic branch. Here we show that tuning the chemical potential the zero-temperature equation of state gradually unfolds. Under general conditions, we find that the Mott transition evolves into a first-order transition between two metals, associated to a phase separation region ending in a quantum critical point (QCP) at finite doping. This scenario is here demonstrated solving a simple multi-orbital Hubbard model relevant for the Iron-based superconductors, but its origin - the splitting of the atomic ground state multiplet by a small energy scale, here Hund's coupling - is much more general. A strong analogy with cuprate superconductors is traced.
High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to t…
We investigate the effect of Na intercalation in the layered Mott insulator TiOCl within the framework of density functional theory. We show that the system remains always insulating for all studied Na concentrations, and the evolution of the spectral weight upon Na doping is consistent with recent photoemission experiments. We predict the Na-doped superlattice structures, and show that substitutions of O by F, Cl by S, or Ti by V (or Sc), respectively, fail to metallize the system. We propose a description in terms of a multiorbital ionic Hubbard model in a quasi-two-dimensional lattice and d…
We investigated the infrared optical spectra of an organic dimer Mott insulator $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, which was irradiated with X-rays. We observed that the irradiation caused a large spectral weight transfer from the mid-infrared region, where interband transitions in the dimer and Mott-Hubbard bands take place, to a Drude part in a low-energy region; this caused the Mott gap to collapse. The increase of the Drude part indicates a carrier doping into the Mott insulator due to irradiation defects. The strong redistribution of the spectral weight demonstrates that the organic M…
In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band picture. Here, based on an analysis of the quantum numbers and the overlaps of relevant states, as well as through a demonstration using the ladder and bilayer t-J models, it is shown that in a continuous Mott transition due to hole doping, the magnetically excited states of the Mott insulator generally emerge in the electron-addition spectrum with the dispersion …
Based on the Hubbard model description of the doped Mott insulator, we prove that there must exist a spinless collective excitation of charge $2e$ and of energy $U-2μ$ peaked at momentum $(π/a,π/a)$ in the non-superconducting state due to doping. Such a collective excitation arises from the electron pair correlation. Its existence is related to the breakdown of an approximate SU(2) particle-hole symmetry, from which an effective field theory of the new excitations is constructed.
We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators $κ$-(ET)$_{2}$$X$ with $X =$ Cu[N(CN)$_{2}$]Cl and Cu$_{2}$(CN)$_{3}$. For $κ$-(ET)$_{2}$Cu[N(CN)$_{2}$]Cl, we have observed a large decrease of the resistivity by 40 % with the irradiation at 300 K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the…
Doping the distorted-perovskite Mott insulators LaTiO$_3$ and GdTiO$_3$ with a single SrO layer along the [001] direction gives rise to a rich correlated electronic structure. A realistic superlattice study by means of the charge self-consistent combination of density functional theory with dynamical mean-field theory reveals layer- and temperature-dependent multi-orbital metal-insulator transitions. An orbital-selective metallic layer at the interface dissolves via an orbital-polarized doped-Mott state into an orbital-ordered insulating regime beyond the two conducting TiO$_2$ layers. We find…
High-temperature superconductors at zero doping can be considered strongly correlated two-dimensional Mott insulators. The understanding of the connection between the superconductor and the Mott insulator hits at the heart of the high-temperature superconducting mechanism. In this paper we investigate the zero-temperature doping-driven evolution of a superconductor towards the Mott insulator in a two dimensional electron model, relevant for high temperature superconductivity. To this purpose we use a cluster extension of dynamical mean field theory. Our results show that a standard (BCS) d-wav…
Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with continuous-time quantum Monte Carlo. The normal state phase diagram as a function of temperature $T$, interaction strength $U$ and filling $n$ reveals that upon increasing $n$ towards the insulator, there is a surface of first-order transition between two metals at non-zero doping. For $T$ above the critical end line there is a maximum in scattering rate.
The spectral properties of a one-dimensional (1D) single-chain Mott insulator Sr$_2$CuO$_{3}$ have been studied in angle-resolved photoemission and optical spectroscopy, at half filling and with small concentrations of extra charge doped into the chains via high oxygen pressure growth. The single- particle gap is reduced with oxygen doping, but the metallic state is not reached. The bandwidth of the charge-transfer band increases with doping, while the state becomes narrower, allowing unambiguous observation of separated spinon and holon branches in the doped system. The optical gap is not cha…
At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bulk value of V3+ to higher oxidation states with decreasing LaAlO3 cap layer thickness. These results provide a synthetic approach to hole-doping transition metal oxide heterointerfaces without invoking …
We present a computational study of PbCoO$_3$ at ambient and elevated pressure. We employ the static and dynamic treatment of local correlation in form of density functional theory + $U$ (DFT+$U$) and + dynamical mean-field theory (DFT+DMFT). Our results capture the experimentally observed crystal structures and identify the unsaturated Pb $6s$ - O $2p$ bonds as the driving force beyond the complex physics of PbCoO$_3$. We provide a geometrical analysis of the structural distortions and we discuss their implications, in particular, the internal doping, which triggers transition between phases …
We give a brief review of the Mott-Kondo scenario and its consequence in the recently-discovered infinite-layer nickelate superconductors. We argue that the parent state is a self-doped Mott insulator and propose an effective $t$-$J$-$K$ model to account for its low-energy properties. At small doping, the model describes a low carrier density Kondo system with incoherent Kondo scattering at finite temperatures, in good agreement with experimental observation of the logarithmic temperature dependence of electric resistivity. Upon increasing Sr doping, the model predicts a breakdown of the Kondo…
Momentum resolved inelastic resonant x-ray scattering is used to map the evolution of charge excitations over a large range of energies, momenta and doping levels in the electron doped Mott insulator class Nd$_{2-x}$Ce$_x$CuO$_4$. As the doping induced AFM-SC (antiferromagnetic-superconducting) transition is approached, we observe an anisotropic softening of collective charge modes over a large energy scale along the Gamma to (π,π)-direction, whereas the modes exhibit broadening ($\sim$ 1 eV) with relatively little softening along Gamma to (π,0) with respect to the parent Mott insulator (x=0).…
We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling $N$ and crystal field splitting $Δ$. We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicate…
This paper has been withdrawn by the authors because the results were incorrect due to the use of an impurity solver that fails at large interaction strength and above half-filling. This led, first, to the development of a new impurity solver (arXiv:1202.5814 or Phys.Rev. B 86, 085133 (2012)) and, second, to a complete revision of the thermopower results with different conclusions. Therefore a new paper on thermopower was submitted (arXiv:1209.4349) and the present one withdrawn.
It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spe…
The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator is driven by a combination of charge transfer effects and enhanced correlation effects. Approaching a Mott insulating phase from the metallic side, we show that a dead layer forms at the surface of the solid, where quasiparticle amplitudes are exponentially suppressed. Surface correlation and charge transfer effects can be strongly impacted by changes of th…
Electrostatic doping into an $n$-type Mott insulator Sm$_{2}$CuO$_{4}$ has been successfully achieved with use of the heterojunction with an $n$-type band semiconductor Nb-doped SrTiO$_{3}$. The junction exhibits rectifying current-voltage characteristics due to the interface band discontinuity and the formation of depleted region. The application of reverse bias electric field on this junction enables the field-effect electron doping (presumably up to 6% per Cu atom) to the Mott insulator. The electro-modulation absorption spectroscopy could clearly show a large modification of the Mott-gap s…
We argue that interesting strongly correlated two-dimensional electron systems can be created by modulation doping near a heterojunction between Mott insulators. Because the dopant atoms are remote from the carrier system, the electronic system will be weakly disordered. We argue that the competition between different ordered states can be engineered by choosing appropriate values for the dopant density and the setback distance of the doping layer. In particular larger setback distances favor two-dimensional antiferromagnetism over ferromagnetism. We estimate some key properties of modulation-…
Based on a microscopic theoretical study, we show that novel superconductivity is induced by carrier doping in layered perovskite Ir oxides where a strong spin-orbit coupling causes an effective total angular momentum J_{eff}=1/2 Mott insulator. Using a variational Monte Carlo method, we find an unconventional superconducting state in the ground state phase diagram of a t_{2g} three-orbital Hubbard model on the square lattice. This superconducting state is characterized by a d_{x^2-y^2}-wave "pseudospin singlet" formed by the J_{eff}=1/2 Kramers doublet, which thus contains inter-orbital as we…
High-$T_{\rm C}$ superconductors show anomalous transport properties in their normal states, such as the bad-metal and pseudogap behaviors. To discuss their origins, it is important to speculate whether these behaviors are material-dependent or universal phenomena in the proximity of the Mott transition, by investigating similar but different material systems. An organic Mott transistor is suitable for this purpose owing to the adjacency between the two-dimensional Mott insulating and superconducting states, simple electronic properties, and high doping/bandwidth tunability in the same sample.…
The intrinsic instability of underdoped copper oxides towards inhomogeneous states is one of the central puzzles of the physics of correlated materials. The influence of the Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is subject of intense theoretical and experimental effort. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p$\rightarrow$Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, a…
The insulator to metal transition in LaTiO_3 induced by La substitution via Sr is studied within multi-band exact diagonalization dynamical mean field theory at finite temperatures. It is shown that weak hole doping triggers a large interorbital charge transfer, with simultaneous electron and hole doping of t2g subbands. The transition is first-order and exhibits phase separation between insulator and metal. In the metallic phase, subband compressibilities become very large and have opposite signs. Electron doping gives rise to an interorbital charge flow in the same direction as hole doping. …
The doping and temperature dependent conductivity of electron-doped cuprates is analysed. The variation of kinetic energy with doping is shown to imply that the materials are approximately as strongly correlated as the hole-doped materials. The optical spectrum is fit to a quasiparticle scattering model; while the model fits the optical data well, gross inconsistencies with photoemission data are found, implying the presence of a large, strongly doping dependent Landau parameter.
We present a theoretical framework for a quantitative understanding of the full doping dependence of the optical spectra of the cuprates. In accord with experimental observations, the computed spectra show how the high-energy Mott features continue to persist in the overdoped regime even after the mid-infrared (MIR) peak originating from the pseudogap has collapsed in a quantum critical point. In this way, we reconcile the opposing tendencies of the MIR and Mott peaks to shift in opposite directions in the optical spectra with increasing doping. The competition between the pseudogap and the Mo…
Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled product ground state. Exploiting the holographic duality, which maps the physics of densely entangled matter onto gravitational black hole physics, we show how Mott-insulators can be constructed departing from entangled non-Fermi liquid metallic states, such as the strange metals found in cuprate superconductors. These "entangled Mott insulators" have traits in c…
We reinvestigate the bandwidth-control and doping-control Mott transitions (BCMT and DCMT) from a spin liquid Mott insulator to a Fermi liquid metal based on the slave-rotor representation of the Hubbard model,\cite{Florens} where the Mott transitions are described by softening of bosonic collective excitations. We find that the nature of the insulating phase away from half filling is different from that of half filling in the respect that a charge density wave coexists with a topological order (spin liquid) away from half filling because the condensation of vortices generically breaks transla…
Orbital-selective electronic modes induced by doping and originating from distinct spin excitations: an essential feature of orbital-selective Mott transition
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（物质纳米结构研究中心，日本国立物质材料研究所）
Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of spectral properties upon doping Mott insulating states, by utilizing the cluster perturbation theory on the Hubbard and t-J-like models. Specifically, a quasi-free dispersion crossing the Fermi level develops with small doping, and it eventually evolves into the most dominant feature at high doping levels. Although this dispersion is related to the free electron …
The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that ultimately affect the condensation of Cooper pairs. A huge hindrance to understanding the origin of these phenomena in the curates is the difficulty in accessing doping levels near the parent state. Recently, the J$_{eff}$=1/2 Mott state of the perovskite strontium iridates has revealed intriguing parallels to the cuprates, with the advantage that it provides unique …
A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties when compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transition temperatures. However, control of carrier doping into the parent AFM insulators has been difficult due to their intrinsic phase separation. Here, we fabricated an Fe-vacancy-ordered TlFe1.6Se2 in…
We consider an interaction-driven scenario for the two-dimensional metal-insulator transition in zero magnetic field (2D-MIT), based on melting the Wigner crystal through vacancy-interstitial pair formation. We show that the transition from the Wigner-Mott insulator to a heavy Fermi liquid emerges as an instability to self-doping, resembling conceptually the solid to normal liquid transition in He3. The resulting physical picture naturally explains many puzzling features of the 2D-MIT.
The phase diagram of the high-Tc cuprates is dominated by the Mott insulating phase of the parent compounds. As we approach it from large doping, a standard Fermi-liquid gradually turns into a bad non-Fermi liquid metal, a process which culminates in the pseudogap regime, in which the antinodal region in momentum space acquires a gap before reaching a fully gapped Mott state. Here we show that experiments for electron- and hole-doped BaFe2As2 support an analogous scenario. The doping evolution is dominated by the influence of a Mott insulator that would be realized for half-filled conduction b…
High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are introduced. Here, by in situ vacuum annealing and Rb deposition on the Bi2Sr2Ca0.6Dy0.4Cu2O8+delta (Bi2212) sample surface to push its doping level continuously from deeply underdoped (Tc=25 K, doping level p-0.066) to the near zero doping parent Mott insulator, angle-resolved photoemission spectroscopy measurements are carried out to observe the detailed elect…
This article reviews the effort to understand the physics of high temperature superconductors from the point of view of doping a Mott insulator. The basic electronic structure of the cuprates is reviewed, emphasizing the physics of strong correlation and establishing the model of a doped Mott insulator as a starting point. A variety of experiments are discussed, focusing on the region of the phase diagram close to the Mott insulator (the underdoped region) where the behavior is most anomalous. We introduce Anderson's idea of the resonating valence bond (RVB) and argue that it gives a qualitati…
We investigate the double layered Sr$_{3}$(Ru$_{1-x}$Mn$_{x}$)$_{2}$O$_{7}$ and its doping-induced quantum phase transition (QPT) from a metal to an antiferromagnetic (AFM) Mott insulator. Using spectroscopic imaging with the scanning tunneling microscope (STM), we visualize the evolution of the electronic states in real- and momentum-space. We find a partial-gap in the tunneling density of states at the Fermi energy (E$_{F}$) that develops with doping to form a weak Mott insulating (Δ ~ 100meV) state. Near the QPT, we discover a spatial electronic reorganization into a commensurate checkerboa…
A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate in the antiferromagnetic insulating regime. We show that the doped charge induces a spectral weight transfer from the high energy Hubbard bands to the low energy in-gap states. With increasing doping, a V-shaped density of state suppression occurs at the Fermi level, which is accompanied by the emergence of checkerboard charge order. The new STM perspective…
A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction strengths we are able access low enough temperatures that a reliable extrapolation to temperature T=0 may be performed, and ground state energies of insulating and metallic states may be compared. We find that the T=0 doping-driven transition is of second order and is characterized by an interaction-strength dependent electronic compressibility, which vanishes…
We consider the one-band Hubbard model on the square lattice by using variational and Green's function Monte Carlo methods, where the variational states contain Jastrow and backflow correlations on top of an uncorrelated wave function that includes BCS pairing and magnetic order. At half filling, where the ground state is antiferromagnetically ordered for any value of the on-site interaction $U$, we can identify a hidden critical point $U_{\rm Mott}$, above which a finite BCS pairing is stabilized in the wave function. The existence of this point is reminiscent of the Mott transition in the pa…
The electronic phase diagram of the weak spin-orbit Mott insulator (Sr(1-x)Lax)3Ir2O7 is determined via an exhaustive experimental study. Upon doping electrons via La substitution, an immediate collapse in resistivity occurs along with a narrow regime of nanoscale phase separation comprised of antiferromagnetic, insulating regions and paramagnetic, metallic puddles persisting until x~0.04. Continued electron doping results in an abrupt, first-order phase boundary where the Neel state is suppressed and a homogenous, correlated, metallic state appears with an enhanced spin susceptibility and loc…
Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interests especially for their electron-doped states. However, previous experiments are largely limited within a small doping range due to the absence of effective dopants, and therefore the electron-doped phase diagram remains elusive. Here we utilize an ionic-liquid-gating induced protonation method to achieve electron-doping into a 5d Mott-insulator built with SrIrO3/SrTiO3 superlattice, and achieve a systematic mapping of its electron-doped phase diagram w…
Mott insulator superconductor transition, via pressure and no external doping, is studied in orbitally non degenerate spin-\half systems. It is presented as another RVB route to high \tc superconductivity. We propose a `strong coupling' hypothesis which helps to view first order Mott transition as a self doping process that also preserves superexchange on metal side . We present a generalized t-J model where a conserved $N_0$ doubly occupied ($e^-$) sites and $N_0$ empty sites ($e^+$) hop in the background of $N - 2 N_0$ singly singly occupied (neutral) sites in a lattice of N sites. An equiva…
Copper oxides become superconductors rapidly upon doping with electron holes, suggesting a fundamental pairing instability. The Cooper mechanism explains normal superconductivity as an instability of a fermi-liquid state, but high-temperature superconductors derive from a Mott-insulator normal state, not a fermi liquid. We show that precocity to pair condensation with doping is a natural property of competing antiferromagnetism and d-wave superconductivity on a singly-occupied lattice, thus generalizing the Cooper instability to doped Mott insulators, with significant implications for the high…
Pyrochlore oxides are fascinating systems where strong, multi-orbital correlations in concert with geometrical frustration give rise to unanticipated physical properties. The detailed mechanism of the insulator-metal transitions (IMT) underpinning these phenomena is, however, ill-understood in general. Motivated thereby, we study the IMT in the pyrochlore ${\rm Hg_{2}Ru_{2}O_{7}}$ using LDA+DMFT. In contrast to the well-known examples of Mott transitions in TMO, we show that, in the negative charge-transfer situation characteristic of \hg, self-doping plays a crucial role in the emergence of a…
How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-$T_c$ cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at tw…
We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator $κ$-(BEDT-TTF)$_2$CuN(CN)$_2$Cl ($κ$-Cl).The FET shows a continuous metal$-$insulator transition (MIT) as electrostatic doping proceeds. The phase transition appears to involve two-step crossovers, one in Hall measurement and the other in conductivity measurement. The crossover in conductivity occurs around the conductance quantum $e^2/h$ , and hence is not associated with …
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we solve the cellular dynamical mean-field equations for the two-dimensional Hubbard model using a plaquette as the reference quantum impurity model and continuous-time quantum Monte Carlo method as impurity solver. The normal-state phase diagram as a function of interaction strength $U$, temperature $T$, and filling $n$ shows that, upon increasing $n$ towards th…
Superconductivity emerges from the cuprate antiferromagnetic Mott state with hole doping. The resulting electronic structure is not understood, although changes in the state of oxygen atoms appear paramount. Hole doping first destroys the Mott state yielding a weak insulator where electrons localize only at low temperatures without a full energy gap. At higher doping, the 'pseudogap', a weakly conducting state with an anisotropic energy gap and intra-unit-cell breaking of 90\degree-rotational (C4v) symmetry appears. However, a direct visualization of the emergence of these phenomena with incre…
A phase diagram of two Mott-Hubbard planes interacting with a short-range Coulomb repulsion is presented. Considering the case of equal amount of doping by holes in one layer as electrons in the other, a holon-doublon inter-layer exciton formation is shown to be a natural consequence of Coulomb attraction. Quasiparticle spectrum is gapped and incoherent below a critical doping $δ_c$ due to the formation of excitons. A spin liquid insulator (SLI) phase is thus realized without the lattice frustration. The critical value $δ_{c}$ sensitively depends on the inter-layer interaction strength. In the…
We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient is observed below a characteristic coupling length of 10-15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the AlO2-terminated LaAlO3 surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole-doping in oxide thin film heterostructures.
We study possible Weyl semimetals of strongly-correlated electrons by investigating magnetotransport properties in pyrochlore R2Ir2O7 (R=rare-earth ions), choosing three types of R ions to design the exchange coupling scheme between R 4f and Ir 5d moments; non-magnetic Eu (4f6), isotropic Gd (4f7), and anisotropic Tb (4f8). In the doping-induced semimetallic state, distinctive features of magnetoresistance and Hall effect are observed in R=Gd and Tb compounds due to the effects of the exchange-enhanced isotropic and anisotropic Zeeman fields, respectively, exemplifying the double Weyl semimeta…
We theoretically investigate twisted structures where each layer is composed of a strongly correlated material. In particular, we study a twisted t-J model of cuprate multilayers within the slave-boson mean field theory. This treatment encompasses the Mott physics at small doping and self consistently generates d-wave pairing. Furthermore, including the correct inter-layer tunneling form factor consistent with the symmetry of the Cu $d_{x^2-y^2}$ orbital proves to be crucial for the phase diagram. We find spontaneous time reversal (T) breaking around twist angle of $45^\circ$, although only in…
