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arXiv 2103.13668cond-mat.str-elcond-mat.mtrl-sci
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利用质子化诱导电子填充调控Mott铱酸盐超晶格的电子态

Manipulate the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron-Filling

Meng Wang, Lin Hao, Fang Yin, Xin Yang, Shengchun Shen, Nianlong Zou, Hui Cao, Junyi Yang, Nianpeng Lu, Yongshun Wu, Jianbing Zhang, Hua Zhou, Jia Li, Jian Liu, Pu Yu

摘要:

自旋轨道耦合的莫特铱酸盐与超导铜酸盐的母体化合物具有很大的相似性,特别是其电子掺杂态吸引了广泛的研究兴趣。然而,由于缺乏有效的掺杂剂,以前的实验在很大程度上被限制在一个小的掺杂范围内,因此电子掺杂相图仍然难以捉摸。在这里,我们利用离子液体门控诱导质子化的方法来实现电子掺杂到一个5d莫特绝缘体构建SrIrO 3/SrTiO 3超晶格,并实现其电子掺杂相图的演化的铱价态从4+到3+,相当于每个铱离子掺杂一个电子的系统映射。随着掺杂浓度的增加,母体Mott绝缘体首先转变为磁有序逐渐被抑制的局域金属态,然后进一步演化为能带绝缘态。这项工作形成了电子掺杂的莫特铱酸盐系统的研究向前迈出了重要的一步,并且在人工设计的超晶格结构中操纵能带填充的策略可以很容易地扩展到具有更多奇异状态的其他系统中进行探索。

英文摘要:

Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interests especially for their electron-doped states. However, previous experiments are largely limited within a small doping range due to the absence of effective dopants, and therefore the electron-doped phase diagram remains elusive. Here we utilize an ionic-liquid-gating induced protonation method to achieve electron-doping into a 5d Mott-insulator built with SrIrO3/SrTiO3 superlattice, and achieve a systematic mapping of its electron-doped phase diagram with the evolution of the iridium valence state from 4+ to 3+, equivalent to doping of one electron per iridium ion. Along increasing doping level, the parent Mott-insulator is first turned into a localized metallic state with gradually suppressed magnetic ordering, and then further evolved into a nonmagnetic band insulating state. This work forms an important step forward for the study of electron-doped Mott iridate systems, and the strategy of manipulating the band filling in an artificially designed superlattice structure can be readily extended into other systems with more exotic states to explore.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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