High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are introduced. Here, by in situ vacuum annealing and Rb deposition on the Bi2Sr2Ca0.6Dy0.4Cu2O8+delta (Bi2212) sample surface to push its doping level continuously from deeply underdoped (Tc=25 K, doping level p-0.066) to the near zero doping parent Mott insulator, angle-resolved photoemission spectroscopy measurements are carried out to observe the detailed electronic structure evolution in lightly hole-doped region for the first time. Our results indicate that the chemical potential lies at about 1 eV above the charge transfer band for the parent state at zero doping which is quite close to the upper Hubbard band. With increasing hole doping, the chemical potential moves continuously towards the charge transfer band and the band structure evolution exhibits a rigid band shift-like behavior. When the chemical potential approaches the charge transfer band at a doping level of -0.05, the nodal spectral weight near the Fermi level increases, followed by the emergence of the coherent quasiparticle peak and the insulator-superconductor transition. Our observations provide key insights in understanding the insulator-superconductor transition in doping the parent cuprate compound and for establishing related theories.
We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel self-localization of charge carriers. Interesting transport and dielectric properties are found as the consequences, including large doping-dependent thermopower and dielectric constant, low-temperature variable-range-hopping resistivity, as well as high-temperature strange-metal-like resistivity, which are consistent with experimental measurements in the high-T$_c…
A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate in the antiferromagnetic insulating regime. We show that the doped charge induces a spectral weight transfer from the high energy Hubbard bands to the low energy in-gap states. With increasing doping, a V-shaped density of state suppression occurs at the Fermi level, which is accompanied by the emergence of checkerboard charge order. The new STM perspective…
The spatial variation of electronic states was imaged in the lightly doped Mott insulator Ca_{2-x}Na_{x}CuO_{2}Cl_{2} using scanning tunneling microscopy / spectroscopy (STM/STS). We observed nano-scale domains with a high local density of states within an insulating background. The observed domains have a characteristic length scale of 2 nm (~4-5a, a:lattice constant) with preferred orientations along the tetragonal [100] direction. We argue that such spatially inhomogeneous electronic states are inherent to slightly doped Mott insulators and play an important role for the insulator to metal …
Superconductivity emerges from the cuprate antiferromagnetic Mott state with hole doping. The resulting electronic structure is not understood, although changes in the state of oxygen atoms appear paramount. Hole doping first destroys the Mott state yielding a weak insulator where electrons localize only at low temperatures without a full energy gap. At higher doping, the 'pseudogap', a weakly conducting state with an anisotropic energy gap and intra-unit-cell breaking of 90\degree-rotational (C4v) symmetry appears. However, a direct visualization of the emergence of these phenomena with incre…
It is widely believed that high-temperature superconductivity in the cuprates emerges from doped Mott insulators. The physics of the parent state seems deceivingly simple: The hopping of the electrons from site to site is prohibited because their on-site Coulomb repulsion U is larger than the kinetic energy gain t. When doping these materials by inserting a small percentage of extra carriers, the electrons become mobile but the strong correlations from the Mott state are thought to survive; inhomogeneous electronic order, a mysterious pseudogap and, eventually, superconductivity appear. How th…
Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where similar el-ph couplings should be at work. The archetypical case is the perovskite SrTiO$_3$ (STO), well known for its giant dielectric constant of 10000 at low temperature, exceeding that of La$_2$CuO$_4$ b…
We amend ab initio strongly-correlated band structures by taking into account the band-tailing phenomenon in doped charge-transfer Mott-Hubbard insulators. We show that the photoemission from band tails accounts for sharp "quasi-particle" peaks, rapid loss of their intensities in some directions of the Brillouin zone ("Fermi-arcs") and high-energy "waterfall" anomalies as a consequence of matrix-element effects of disorder-localised states in the charge-transfer gap of doped cuprates.
We calculate the charge compressibility and uniform spin susceptibility for the two-dimensional (2D) Hubbard model slightly away from half-filling within a two-loop renormalization group scheme. We find numerically that both those quantities flow to zero as we increase the initial interaction strength from weak to intermediate couplings. This result implies gap openings in both charge and spin excitation spectra for the latter interaction regime. When this occurs, the ground state of the lightly doped 2D Hubbard model may be interpreted as an insulating spin liquid as opposed to a Mott insulat…
We investigate magnetic properties of lightly doped antiferromagnetic Mott insulators in the presence of non-magnetic impurities. Within the framework of the t-J model we calculate the doping dependence of the antiferromagnetic order parameter using the self-consistent diagrammatic techniques. We show that in the presence of non-magnetic impurities the antiferromagnetic order is more robust against hole doping in comparison with the impurity-free host, implying that magnetic order can re-appear upon Zn doping into lightly hole-doped cuprates. We argue that this is primarily due to the loss of …
The degree of electron correlations remains a central issue in the iron-based superconductors. The parent iron pnictides are antiferromagnetic, and their bad-metal behavior has been interpreted in terms of proximity to a Mott transition. We study such a transition in multi-orbital models on modulated lattices containing an ordered pattern of iron vacancies, using a slave-rotor method. We show that the ordered vacancies lead to a band-narrowing, which pushes the system to the Mott insulator side. This effect is proposed to underlie the insulating behavior observed in the parent compounds of the…
Copper oxide high temperature superconductors universally exhibit multiple forms of electronically ordered phases that break the native translational symmetry of the CuO2 planes. The interplay between these orders and the superconducting ground state, as well as how they arise through doping a Mott insulator, is essential to decode the mechanisms of high-temperature superconductivity. Over the years, various forms of electronic liquid crystal phases including charge/spin stripes and incommensurate charge-density-waves (CDWs) were found to emerge out of a correlated metallic ground state in und…
The phase diagram of hole-doped copper oxides shows four different electronic phases existing at zero temperature. Familiar among these are the Mott insulator, high-transition-temperature superconductor and metallic phases. A fourth phase, ofunknown identity, occurs at light doping along the zero-temperature bound of the `pseudogap' regime. This regime is rich in peculiar electronic phenomena, prompting numerous proposals that it contains some form of hidden electronic order. Here we present low-temperature electronic structure imaging studies of a lightly hole-doped copper oxide: Ca_{2-x}Na_{…
Identification of the electronic state that appears upon doping a Mott insulator is important to understand the physics of cuprate high-temperature superconductors. Recent scanning tunneling microscopy of cuprates provides evidence that a charge-ordered state emerges before the superconducting state upon doping the parent compound. We study this phenomenon by computing the charge response function of the Hubbard model including frequency-dependent local vertex corrections that satisfy the compressibility sum-rule. We find that upon approaching the Mott phase from the overdoped side, the charge…
One of the major puzzles regarding unconventional superconductivity is how some of the most interesting superconductors are related to an insulating phase that lies in close proximity. Here we report scanning tunneling microscopy studies of the local electronic structure of Cu doped NaFeAs across the superconductor to insulator transition. We find that in the highly insulating regime the electronic spectrum develops an energy gap with diminishing density of state at the Fermi level. The overall lineshape and strong spatial variations of the spectra are strikingly similar to that of lightly dop…
We propose the parent compound of the newly discovered superconducting nickelate Nd$_{1-x}$Sr$_{x}$NiO$_{2}$ as a self-doped Mott insulator, in which the low-density Nd-$5d$ conduction electrons couple to localized Ni-3$% d_{x^{2}-y^{2}}$ electrons to form Kondo spin singlets at low temperatures. This proposal is motivated with our analyses of the reported resistivity and Hall coefficient data in the normal state, showing logarithmic temperature dependence at low temperatures. In the strong Kondo coupling limit, we derive a generalized $t$-$J$ model with both Kondo singlets and nickel holons m…
Although the mechanism of superconductivity in the cuprates remains elusive, it is generally agreed that at the heart of the problem is the physics of doped Mott insulators. The cuprate parent compound has one unpaired electron per Cu site, and is predicted by band theory to be a half-filled metal. The strong onsite Coulomb repulsion, however, prohibits electron hopping between neighboring sites and leads to a Mott insulator ground state with antiferromagnetic (AF) ordering. Charge carriers doped into the CuO2 plane destroy the insulating phase and superconductivity emerges as the carrier dens…
We use scanning tunneling microscopy to study the temperature evolution of electronic structure in Ca3Cu2O4Cl2 parent Mott insulator of cuprates. We find that the upper Hubbard band moves towards the Fermi energy with increasing temperature, while the charge transfer band remains basically unchanged. This leads to a reduction of the charge transfer gap size at high temperatures, and the rate of reduction is much faster than that of conventional semiconductors. Across the Neel temperature for antiferromagnetic order, there is no sudden change in the electronic structure. These results shed new …
The parent compounds of the high-temperature cuprate superconductors are Mott insulators. It has been generally agreed that understanding the physics of the doped Mott insulators is essential to understanding the mechanism of high temperature superconductivity. A natural starting point is to elucidate the basic electronic structure of the parent compound. Here we report comprehensive high resolution angle-resolved photoemission measurements on Ca$_2$CuO$_2$Cl$_2$, a Mott insulator and a prototypical parent compound of the cuprates. Multiple underlying Fermi surface sheets are revealed for the …
The effect of proximity to a Mott insulating phase on the charge transport properties of a superconductor is determined. An action describing the low energy physics is formulated and different scenarios for the approach to the Mott phase are distinguished by different variation with doping of the parameters in the action. A crucial issue is found to be the doping dependence of the quasiparticle charge which is defined here and which controls the temperature and field dependence of the electromagnetic response functions. Presently available data on high-T$_{c}$ superconductors are analysed. The…
Neutron diffraction measurements are presented measuring the responses of both magnetic and structural order parameters of parent and lightly Co-doped Ba(Fe{1-x}Co{x})2As2 under the application of uniaxial pressure. We find that the uniaxial pressure induces a thermal shift in the onset of antiferromagnetic order that grows as a percentage of T_N as Co-doping is increased and the superconducting phase is approached. Additionally, as uniaxial pressure is increased within parent and lightly-doped Ba(Fe{1-x}Co{x})2As2 on the first order side of the tricritical point, we observe a decoupling betwe…
The Fermi arc is a striking manifestation of the strong-correlation physics in high-T_c cuprates. In this paper, implications of the metallic transport in the lightly hole-doped regime of the cuprates, where the Fermi arcs are found, are examined in conjunction with competing interpretations of the Fermi arcs in terms of small hole pockets or a large underlying Fermi surface. It is discussed that the latter picture provides a more natural understanding of the metallic transport in view of the Mott-limit argument. Furthermore, it is shown that a suitable modeling of the Fermi arcs in the framew…
We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of spectral weight from high energy Hubbard band to low energy in-gap state creates a broad peak and nearly V-shaped gap around the Fermi level. The peak position shows a sudden drop at distance around 4 a0 and then remains almost constant. The in-gap states exhibit peculiar spatial distributions depending on the configuration of the two dopants relative to the …
The bad-metal behavior of the iron pnictides has motivated a theoretical description in terms of a proximity to Mott localization. Since the parent compounds of the iron pnictides contain an even number of 3d-electrons per Fe, it is important to determine whether a Mott transition robustly exists and the nature of the possible Mott insulating phases. We address these issues in a minimal two-orbital model and a more realistic four-orbital model for the parent iron pnictides using a slave-spin approach. In the two-orbital model with two electrons per Fe, we identify a transition from metal to Mo…
Persistent Fermi Pockets and Robust Electron Pairing in Lightly Doped CuO$_2$ Planes of Cuprate Superconductors
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所凝聚态物理国家实验室）；University of Chinese Academy of Sciences（中国科学院大学）；Max Planck Institute for Solid State Research（马克斯·普朗克固体研究研究所）；Technical Institute of Physics and Chemistry, Chinese Academy of Sciences（中国科学院理化技术研究所）；Songshan Lake Materials Laboratory（松山湖材料实验室）；Beijing Academy of Quantum Information Sciences（北京量子信息科学研究院）
Fermi-liquid-like phase driven by next-nearest-neighbor couplings in a lightly doped kagome-lattice $t$-$J$ model
School of Physics, Beihang University（北京航空航天大学物理学院）；School of Physics, Beijing Institute of Technology（北京理工大学物理学院）；Department of Physics and Astronomy, California State University Northridge（加州州立大学北岭分校物理与天文学系）；School of Physical Sciences, Great Bay University（大湾区大学物理科学学院）；Great Bay Institute for Advanced Study（大湾区高等研究院）
La$_2$O$_3$Fe$_2$Se$_2$ can be explained in terms of Mott localization in sharp contrast with the metallic behavior of FeSe and other parent parent compounds of iron superconductors. We demonstrate that the key ingredient that makes La$_2$O$_3$Fe$_2$Se$_2$ a Mott insulator, rather than a correlated metal dominated by the Hund's coupling is the enhanced crystal-field splitting, accompanied by a smaller orbital-resolved kinetic energy. The strong deviation from orbital degeneracy introduced by the crystal-field splitting also pushes this materials close to an orbital-selective Mott transition. W…
High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to t…
The effects of nonmagnetic Zn and magnetic Ni substitution for Cu site on magnetism are studied by measurements of uniform magnetic susceptibility for lightly doped La_{2-x}Sr_xCu_{1-z}M_zO_4 (M=Zn or Ni) polycrystalline samples. For the parent x=0, Zn doping suppresses the Néel temperature T_N whereas Ni doping hardly changes T_N up to z=0.3. For the lightly doped samples with T_N~0, the Ni doping recovers T_N. For the superconducting samples, the Ni doping induces the superconductivity-to-antiferromagnetic transition (or crossover). All the heavily Ni doped samples indicate a spin glass beha…
In high temperature cuprate superconductors, it is now generally agreed that the parent compound is a Mott insulator and superconductivity is realized by doping the antiferromagnetic Mott insulator. In the iron-based superconductors, however, the parent compound is mostly antiferromagnetic metal, raising a debate on whether an appropriate starting point should go with an itinerant picture or a localized picture. It has been proposed theoretically that the parent compound of the iron-based superconductors may be on the verge of a Mott insulator, but so far no clear experimental evidence of dopi…
The bad metal behavior in the normal state of the iron-based superconductors suggests an intimate connection between the superconductivity and a proximity to a Mott transition. At the same time, there is strong evidence for the multi-orbital nature of the electronic excitations. It is then important to understand the orbital-dependent effects of electron correlations. In this paper we review the recent theoretical progresses on the metal-to-insulator transition in multiorbital models for the iron-based superconductors. These include studies of models that contain at least the 3d xy and 3d xz/y…
In the framework of dynamical mean field theory (DMFT) we analyze Hall effect in doped Mott insulator as a parent cuprate superconductor. We consider the partial filling (hole doping) of the lower Hubbard band and calculate the dependence of Hall coefficient and Hall number on hole doping, determining the critical concentration for sign change of the Hall coefficient. Significant temperature dependence of Hall effect is noted. A good agreement is demonstrated with concentration dependence of Hall number obtained in experiments in the normal state of YBCO.
Possible superconductivity in recently discovered (Tl,K)Fe$_x$Se$_2$ compounds is studied from the viewpoint of doped Mott insulator. The Mott insulating phase is examined to be preferred in the parent compound at $x=1.5$ due to the presence of Fe vacancies. Partial filling of vacancies at the Fe-sites introduces electron carriers and leads to electron doped superconductivity. By using a two-orbital Hubbard model in the strong coupling limit, we find that the s-wave pairing is more favorable at small Hund's coupling, and d$_{x^2-y^2}$ wave pairing is more favorable at large Hund's coupling.
Bad metal properties have motivated a description of the parent iron pnictides as correlated metals on the verge of Mott localization. What has been unclear is whether interactions can push these and related compounds to the Mott insulating side of the phase diagram. Here we consider the iron oxychalcogenides La2O2Fe2O(Se,S)2, which contain an Fe square lattice with an expanded unit cell. We show theoretically that they contain enhanced correlation effects through band narrowing compared to LaOFeAs, and we provide experimental evidence that they are Mott insulators with moderate charge gaps. W…
We review our angle-resolved photoemission spectroscopy (ARPES) results on different layered oxide superconductors, and on their insulating parent compounds. The low energy excitations are discussed with emphasis on some of the most recent issues, such as the Fermi surface and remnant Fermi surface, the pseudogap and d-wave-like dispersion, and lastly the signatures in the ARPES spectra of multiple electronic components, many body effects, and the superfluid density. We will focus on systematic changes in the electronic structure which may be relevant to the development of a comprehensive pict…
We present a combined high-resolution x-ray diffraction and x-ray resonant magnetic scattering (XRMS) study of as-grown BaFe2As2. The structural/magnetic transitions must be described as a two-step process. At T_S = 134.5 K we observe the onset of a second-order structural transition from the high-temperature paramagnetic tetragonal structure to a paramagnetic orthorhombic phase, followed by a discontinuous step in the structural order parameter that is coincident with a first-order antiferromagnetic (AFM) transition at T_N = 133.75 K. These data, together with detailed high-resolution x-ray s…
Momentum resolved inelastic resonant x-ray scattering is used to map the evolution of charge excitations over a large range of energies, momenta and doping levels in the electron doped Mott insulator class Nd$_{2-x}$Ce$_x$CuO$_4$. As the doping induced AFM-SC (antiferromagnetic-superconducting) transition is approached, we observe an anisotropic softening of collective charge modes over a large energy scale along the Gamma to (π,π)-direction, whereas the modes exhibit broadening ($\sim$ 1 eV) with relatively little softening along Gamma to (π,0) with respect to the parent Mott insulator (x=0).…
We give a brief review of the Mott-Kondo scenario and its consequence in the recently-discovered infinite-layer nickelate superconductors. We argue that the parent state is a self-doped Mott insulator and propose an effective $t$-$J$-$K$ model to account for its low-energy properties. At small doping, the model describes a low carrier density Kondo system with incoherent Kondo scattering at finite temperatures, in good agreement with experimental observation of the logarithmic temperature dependence of electric resistivity. Upon increasing Sr doping, the model predicts a breakdown of the Kondo…
While the parent compounds of the cuprate high temperature superconductors (high-Tc's) are Mott insulators, the iron-pnictide high-Tc's are in the vicinity of a metallic spin density wave (SDW) state, which highlights the difference between these two families. However, insulating parent compounds were identified for the newly discovered KxFe2-ySe2. This raises an intriguing question as to whether the iron-based high-Tc's could be viewed as doped Mott insulators like the cuprates. Here we report angle-resolved photoemission spectroscopy (ARPES) evidence of two insulating and one semiconducting …
The pseudogap is a central puzzle of cuprate superconductors. Its connection to the Mott insulator at low doping $p$ remains ambiguous and its relation to the charge order that reconstructs the Fermi surface at intermediate $p$ is still unclear. Here we use measurements of the Hall coefficient in magnetic fields up to 88 T to show that Fermi-surface reconstruction by charge order in YBa$_2$Cu$_3$O$_y$ ends sharply at a critical doping $p = 0.16$, distinctly lower than the pseudogap critical point at $p^* = 0.19$. This shows that pseudogap and charge order are separate phenomena. We then find t…
A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties when compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transition temperatures. However, control of carrier doping into the parent AFM insulators has been difficult due to their intrinsic phase separation. Here, we fabricated an Fe-vacancy-ordered TlFe1.6Se2 in…
Since the discovery of half-filled cuprate to be a Mott insulator, the excitation spectra above the chemical potential for the unoccupied states has attracted many research attentions. There were many theoretical works using different numerical techniques to study this problem, but many have reached different conclusions. One of the reasons is the lack of very detailed high-resolution experimental results for the theories to be compared with. Recently, the scanning tunneling spectroscopy (STS)\cite{cai2015visualizing,ye2013visualizing} on lightly doped Mott insulator with an antiferromagnetic …
The high-temperature superconductivity in copper oxides emerges when carriers are doped into the parent Mott insulator. This well-established fact has, however, eluded a microscopic explanation. Here we show that the missing link is the self-energy pole in the energy-momentum space. Its continuous evolution with doping directly connects the Mott insulator and high-temperature superconductivity. We show this by numerically studying the extremely small doping region close to the Mott insulating phase in a standard model for cuprates, the two-dimensional Hubbard model. We first identify two relev…
We report a Cu K-edge resonant inelastic x-ray scattering (RIXS) study of high-Tc cuprates. Momentum-resolved charge excitations in the CuO2 plane are examined from parent Mott insulators to carrier-doped superconductors. The Mott gap excitation in undoped insulators is found to commonly show a larger dispersion along the [pi,pi] direction than the [pi,0] direction. On the other hand, the resonance condition displays material dependence. Upon hole doping, the dispersion of the Mott gap excitation becomes weaker and an intraband excitation appears as a continuum intensity below the gap at the s…
One of the biggest puzzles concerning the cuprate high temperature superconductors is what determines the maximum transition temperature (Tc,max), which varies from less than 30 K to above 130 K in different compounds. Despite this dramatic variation, a robust trend is that within each family, the double-layer compound always has higher Tc,max than the single-layer counterpart. Here we use scanning tunneling microscopy to investigate the electronic structure of four cuprate parent compounds belonging to two different families. We find that within each family, the double layer compound has a mu…
The electronic phase diagram of the weak spin-orbit Mott insulator (Sr(1-x)Lax)3Ir2O7 is determined via an exhaustive experimental study. Upon doping electrons via La substitution, an immediate collapse in resistivity occurs along with a narrow regime of nanoscale phase separation comprised of antiferromagnetic, insulating regions and paramagnetic, metallic puddles persisting until x~0.04. Continued electron doping results in an abrupt, first-order phase boundary where the Neel state is suppressed and a homogenous, correlated, metallic state appears with an enhanced spin susceptibility and loc…
Since the discovery of superconductivity in infinite-layer nickelates RNiO$_2$ (R=La, Pr, Nd), great research efforts have been paid to unveil its underlying superconducting mechanism. However, the physical origin of the intriguing hole-doped superconductivity phase diagram, characterized by a superconductivity dome sandwiched between two weak insulators, is still unclear. Here, we present a microscopic theory for electronic structure of nickelates from a fundamental model-based perspective. We found that the appearance of weak insulator phase in lightly and heavily hole-doped regime is domina…
A parent insulator of the Bi-based high-$T_c$ superconductor Bi$_2$Sr$_{2-x}$La$_x$CaCu$_2$O$_{8+δ}$ was successfully grown by a traveling solvent floating zone method. The in-plane resistivity $ρ_{ab}$ shows metallic behavior ($dρ_{ab}/dT >$ 0) near room temperature, although the magnitude of the resistivity is far above the Mott limit for metallic conduction. The Hall mobility of the parent insulator does not so much differ from that of an optimally doped sample. These results suggest that the system is not a simple insulator with a well-defined gap, and the hole in the parent insulator is e…
A parent insulator of the Bi-based high-$T_c$ superconductor Bi$_2$Sr$_{2-x}$La$_x$CaCu$_2$O$_{8+δ}$ was successfully grown by a traveling solvent floating zone method. The in-plane resistivity $ρ_{ab}$ shows metallic behavior ($dρ_{ab}/dT >$ 0) near room temperature, although the magnitude of the resistivity is far above the Mott limit for metallic conduction. The Hall mobility of the parent insulator does not so much differ from that of an optimally doped sample. These results suggest that the system is not a simple insulator with a well-defined gap, and the hole in the parent insulator is e…
We have performed angle-resolved photoemission and core-level x-ray photoemission studies of the single-layer cuprate Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$ (Bi2201) and revealed the doping evolution of the electronic structure from the lightly-doped to optimally-doped regions. We have observed the formation of the dispersive quasi-particle band, evolution of the Fermi ``arc'' into the Fermi surface and the shift of the chemical potential with hole doping as in other cuprates. The doping evolution in Bi2201 is similar to that in Ca$_{2-x}$Na$_{x}$CuO$_{2}$Cl$_2$ (Na-CCOC), where a rapid chemical po…
We have carried out a detailed study to investigate the existence of an insulating parent phase for FeSe superconductor. The insulating Fe4Se5 with specific Fe-vacancy order shows a 3D-Mott variable range hopping behavior with a Verwey-like electronic correlation at around 45 K. The application of the RTA process at 450 celcius degree results in the destruction of Fe-vacancy order and induces more electron carriers by increasing the Fe3+ valence state. Superconductivity emerges with Tc ~ 8K without changing the chemical stoichiometry of the sample after the RTA process by resulting in the addi…
The phase diagram of the high-Tc cuprates is dominated by the Mott insulating phase of the parent compounds. As we approach it from large doping, a standard Fermi-liquid gradually turns into a bad non-Fermi liquid metal, a process which culminates in the pseudogap regime, in which the antinodal region in momentum space acquires a gap before reaching a fully gapped Mott state. Here we show that experiments for electron- and hole-doped BaFe2As2 support an analogous scenario. The doping evolution is dominated by the influence of a Mott insulator that would be realized for half-filled conduction b…
Unusual features in the in-plane charge transport in lightly hole-doped La_{2-x}Sr_{x}CuO_{4} single crystals are described. Notably, both the in-plane resistivity and the Hall coefficient show a metallic behavior at moderate temperatures even in the long-range-ordered antiferromagnetic phase, which obviously violates the Mott-Ioffe-Regel criterion for the metallic transport and can hardly be understood without employing the role of charge stripes. Moreover, the mobility of holes in this "metallic" antiferromagnetic state is found to be virtually the same as that in optimally-doped crystals, w…
Doping a parent antiferromagnetic Mott insulator in cuprates leads to short-range electronic correlations and eventually to high-Tc superconductivity. However, the nature of charge correlations in the lightly doped cuprates remains unclear. Understanding the intermediate electronic phase in the phase diagram (between the parent insulator and the high-Tc superconductor) is expected to elucidate the complexity both inside and outside the superconducting dome, and in particular in the underdoped region. One such phase is ferroelectricity whose origin and relation to the properties of high-Tc supe…
