使用层状铁硒化物Mott绝缘体TlFe1. 6Se 2的双电层晶体管
Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2
摘要：
A1-xFe 2-ySe 2（A = K，Cs，Rb，Tl）是最近发现的铁基超导体，其临界温度（Tc）可达32 K。与其他铁基超导体相比，它们的母相具有独特的性质;例如，它们的晶体结构包括有序的Fe空位，它们的正常状态是反铁磁（AFM）绝缘相，并且它们具有极高的Néel转变温度。然而，由于其固有的相分离，控制母AFM绝缘体中的载流子掺杂一直是困难的。在这里，我们制作了铁空位有序TlFe1.6Se2绝缘外延膜与原子级平坦的表面，并检查其静电载流子掺杂使用双电层晶体管（EDLT）结构与离子液体栅极。正栅极电压在25 K下产生三个数量级的电导调制，并进一步诱导和操纵相变;即，通过静电掺杂产生的离域载流子是相变的起源。据作者所知，这是EDLT使用莫特绝缘体铁硒化物通道的第一次演示，并开辟了一条探索铁基层状材料中高Tc超导性的途径，其中通过常规化学手段进行载流子掺杂是困难的。
英文摘要：
A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties when compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transition temperatures. However, control of carrier doping into the parent AFM insulators has been difficult due to their intrinsic phase separation. Here, we fabricated an Fe-vacancy-ordered TlFe1.6Se2 insulating epitaxial film with an atomically flat surface and examined its electrostatic carrier doping using an electric double-layer transistor (EDLT) structure with an ionic liquid gate. The positive gate voltage gave conductance modulation of three orders of magnitude at 25 K, and further induced and manipulated a phase transition; i.e., delocalized carrier generation by electrostatic doping is the origin of the phase transition. This is the first demonstration, to the authors' knowledge, of an EDLT using a Mott insulator iron-selenide channel and opens a way to explore high-Tc superconductivity in iron-based layered materials, where carrier doping by conventional chemical means is difficult.
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