Although the mechanism of superconductivity in the cuprates remains elusive, it is generally agreed that at the heart of the problem is the physics of doped Mott insulators. The cuprate parent compound has one unpaired electron per Cu site, and is predicted by band theory to be a half-filled metal. The strong onsite Coulomb repulsion, however, prohibits electron hopping between neighboring sites and leads to a Mott insulator ground state with antiferromagnetic (AF) ordering. Charge carriers doped into the CuO2 plane destroy the insulating phase and superconductivity emerges as the carrier density is sufficiently high. The natural starting point for tackling high Tc superconductivity is to elucidate the electronic structure of the parent Mott insulator and the behavior of a single doped charge. Here we use a scanning tunneling microscope to investigate the atomic scale electronic structure of the Ca2CuO2Cl2 parent Mott insulator of the cuprates. The full electronic spectrum across the Mott-Hubbard gap is uncovered for the first time, which reveals the particle-hole symmetric and spatially uniform Hubbard bands. A single electron donated by surface defect is found to create a broad in-gap electronic state that is strongly localized in space with spatial characteristics intimately related to the AF spin background. The unprecedented real space electronic structure of the parent cuprate sheds important new light on the origion of high Tc superconductivity from the doped Mott insulator perspective.
A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate in the antiferromagnetic insulating regime. We show that the doped charge induces a spectral weight transfer from the high energy Hubbard bands to the low energy in-gap states. With increasing doping, a V-shaped density of state suppression occurs at the Fermi level, which is accompanied by the emergence of checkerboard charge order. The new STM perspective…
We introduce the concept that there are two generic classes of Mott insulators in nature. They are distinguished by their responses to weak doping. Doped charges form cluster (i.e. distribute inhomogeneously) in type I Mott insulators while distribute homogeneously in type II Mott insulators. We present our opinion on the role inhomogeneity plays in the cuprates.
Superconductivity emerges from the cuprate antiferromagnetic Mott state with hole doping. The resulting electronic structure is not understood, although changes in the state of oxygen atoms appear paramount. Hole doping first destroys the Mott state yielding a weak insulator where electrons localize only at low temperatures without a full energy gap. At higher doping, the 'pseudogap', a weakly conducting state with an anisotropic energy gap and intra-unit-cell breaking of 90\degree-rotational (C4v) symmetry appears. However, a direct visualization of the emergence of these phenomena with incre…
There are two classes of Mott insulators in nature, distinguished by their responses to weak doping. With increasing chemical potential, Type I Mott insulators undergo a first order phase transition from the undoped to the doped phase. In the presence of long-range Coulomb interactions, this leads to an inhomogeneous state exhibiting ``micro-phase separation.'' In contrast, in Type II Mott insulators charges go in continuously above a critical chemical potential. We show that if the insulating state has a broken symmetry, this increases the likelihood that it will be Type I. There exists a clo…
We prove that there exists a class of crystalline insulators, which we call "fragile Mott insulators" which are not adiabatically connected to any sort of band insulator provided time-reversal and certain point-group symmetries are respected, but which are otherwise unspectacular in that they exhibit no topological order nor any form of fractionalized quasiparticles. Different fragile Mott insulators are characterized by different nontrivial one-dimensional representations of the crystal point group. We illustrate this new type of insulators with two examples: the d-Mott insulator discovered i…
We have investigated the Mott transition in a quasi-two-dimensional Mott insulator EtMe$_3$P[Pd(dmit)$_2$]$_2$ with a spin-frustrated triangular lattice in hydrostatic pressure and magnetic field. In the pressure-temperature ($P$-$T$) phase diagram, a valence bond solid phase is found to neighbor the superconductor and metal phases at low temperatures. The profile of the phase diagram is common to those of Mott insulators with antiferromagnetic order. In contrast to the antiferromagnetic Mott insulators, the resistivity in the metallic phase exhibits anomalous temperature dependence, $ρ= ρ_0 +…
We investigated the infrared optical spectra of an organic dimer Mott insulator $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, which was irradiated with X-rays. We observed that the irradiation caused a large spectral weight transfer from the mid-infrared region, where interband transitions in the dimer and Mott-Hubbard bands take place, to a Drude part in a low-energy region; this caused the Mott gap to collapse. The increase of the Drude part indicates a carrier doping into the Mott insulator due to irradiation defects. The strong redistribution of the spectral weight demonstrates that the organic M…
In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band picture. Here, based on an analysis of the quantum numbers and the overlaps of relevant states, as well as through a demonstration using the ladder and bilayer t-J models, it is shown that in a continuous Mott transition due to hole doping, the magnetically excited states of the Mott insulator generally emerge in the electron-addition spectrum with the dispersion …
We improve a previous theory of doped Mott insulators with duality between pairing and magnetism by a further duality transform. As the result we obtained a quantum Ginzburg-Landau theory describing the Cooper pair condensate and the dual of spin condensate. We address the superconductivity by doping a Mott insulator, which we call Mott superconductivity. Some fingerprints of such novelty in cuprates are the scaling between neutron resonance energy and superfluid density, and the induced {\it quantized} spin moment by vortices or Zn impurity (together with circulating charge supper-current to …
Copper oxides become superconductors rapidly upon doping with electron holes, suggesting a fundamental pairing instability. The Cooper mechanism explains normal superconductivity as an instability of a fermi-liquid state, but high-temperature superconductors derive from a Mott-insulator normal state, not a fermi liquid. We show that precocity to pair condensation with doping is a natural property of competing antiferromagnetism and d-wave superconductivity on a singly-occupied lattice, thus generalizing the Cooper instability to doped Mott insulators, with significant implications for the high…
The spin dynamics of electron doped Mott insulators on a triangular lattice is studied based on the $t-J$ model. It is found that the particularly universal behaviors of integrated dynamical spin structure factor seen in the doped Mott insulators on a square lattice, are absent in the doped Mott insulators on a triangular lattice, indicating the presence of the normal state gap. As a result, the spin-lattice relaxation rate 1/$T_{1}$ divided by $T$ reduces with decreasing temperatures in the temperature region above 0.2$J$$\approx$50K, then follows a Curie-Weiss-like behavior at the temperatur…
We analyze the recent vortex core spectroscopy experiments in cuprate superconductor and discuss what can be learned from them about the nature of the ground state in these compounds. We argue that the data are inconsistent with the assumption of a simple metallic ground state and exhibit characteristics of a doped Mott insulator. A theory for a vortex core in such a doped Mott insulator is developed based on the U(1) gauge field slave boson model and is shown to exhibit properties qualitatively consistent with the experimental data.
The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the Cellular Dynamical Mean-Field Theory. We show that the density-driven Mott metal-insulator transition is approached in a non-uniform way in different regions of the momentum space. This gives rise to a breakup of the Fermi surface and to the formation of hot and cold regions, whose position depends on the hole or electron like nature of the carriers in the system.
We argue that a normal Fermi liquid and a singlet, spin gapped Mott insulator cannot be continuously connected, and that some intermediate phase must intrude between them. By explicitly working out a case study where the singlet insulator is stabilized by orbital degeneracy and an inverted Hund's rule coupling, mimicking a Jahn-Teller effect, we find that the intermediate phase is a superconductor.
We show that the pressure-temperature phase diagram of the Mott insulator Ca$_{2}$RuO$_{4}$ features a metal-insulator transition at 0.5GPa: at 300K from paramagnetic insulator to paramagnetic quasi-two-dimensional metal; at $T \leq$ 12K from antiferromagnetic insulator to ferromagnetic, highly anisotropic, three-dimensional metal. % We compare the metallic state to that of the structurally related p-wave superconductor Sr$_{2}$RuO$_{4}$, and discuss the importance of structural distortions, which are expected to couple strongly to pressure.
We use scanning tunneling microscopy to study the temperature evolution of electronic structure in Ca3Cu2O4Cl2 parent Mott insulator of cuprates. We find that the upper Hubbard band moves towards the Fermi energy with increasing temperature, while the charge transfer band remains basically unchanged. This leads to a reduction of the charge transfer gap size at high temperatures, and the rate of reduction is much faster than that of conventional semiconductors. Across the Neel temperature for antiferromagnetic order, there is no sudden change in the electronic structure. These results shed new …
The high-temperature superconductivity in copper oxides emerges when carriers are doped into the parent Mott insulator. This well-established fact has, however, eluded a microscopic explanation. Here we show that the missing link is the self-energy pole in the energy-momentum space. Its continuous evolution with doping directly connects the Mott insulator and high-temperature superconductivity. We show this by numerically studying the extremely small doping region close to the Mott insulating phase in a standard model for cuprates, the two-dimensional Hubbard model. We first identify two relev…
We show that the strong coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single particle spectrum below a characteristic temperature. The pseudogap arises because any singly-occupied site not immediately neighbouring a hole experiences a maximum energy barrier for transport equal to $t^2/U$, where $t$ is the nearest-neighbour hopping integral and $U$ the on-site repulsion. The resultant pseudogap cannot vanish before each lattice site, on average, has at least one hole as a near neighbour.…
A three-orbital model derived from the two-dimensional projection of the $ab$ $initio$ Hamiltonian for alkaline doped fullerene A$_3$C$_{60}$ with A=Cs,Rb,K is studied by a variational Monte Carlo method. We correctly reproduce the experimental isotropic s-wave superconductivity around the $ab$ $initio$ parameters. With narrowing the bandwidth, the transition to an insulator is also reproduced, where orbital symmetry is found to be spontaneously broken with emergence of an excitonic Mott insulator for two orbitals and an antiferromagnetic insulator nearly degenerate with a spin liquid for the …
Oscillations of local density of states generated by a single scalar impurity potential are calculated for one-dimensional systems with dynamically generated charge or spin gap. At zero temperature the oscillations develop at finite wave vector ($π$ for the Mott insulator and $2k_F$ for ICDW/SC) and at frequencies larger than the soliton spectral gap $m$. Their amplitude has a broad maximum at $ω\approx 3m$, where $m$ is the gap magnitude.
Based on the Hubbard model description of the doped Mott insulator, we prove that there must exist a spinless collective excitation of charge $2e$ and of energy $U-2μ$ peaked at momentum $(π/a,π/a)$ in the non-superconducting state due to doping. Such a collective excitation arises from the electron pair correlation. Its existence is related to the breakdown of an approximate SU(2) particle-hole symmetry, from which an effective field theory of the new excitations is constructed.
We study the single hole tt't''J-model numerically to address the momentum space anisotropy found in doped Mott insulators. A simple two band picture to understand how the doped hole is screened by the spin background in states of different momenta is proposed. In this picture, the disparity between the nodal and antinodal regions, observed by experiments in the underdoped cuprate superconductors, follows from local energetic considerations and amounts to the distinction between well defined quasiparticle behavior and spin-charge separation related phenomenology.
Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of novel Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunneling microscopy and angle-resolved photoemission. Our combined experimental and theoretical study indicates that electron corr…
The phase diagram of model Mott-insulator--band-insulator heterostructures is studied using the semiclassical approximation to the dynamical-mean-field method as a function of thickness, coupling constant, and charge confinement. An interface-stabilized ferromagnetic phase is found, allow the study of its competition and possible coexistence with the antiferromagnetic order characteristic of the bulk Mott insulator.
We study the interplay of strong electron correlations and intra-triangle spin exchange at two-thirds filling of the single-orbital Hubbard model on the decorated honeycomb lattice using rotationally invariant slave bosons. We find that the spin exchange tunes between a spin-$1$ Mott insulator, a metal, and a spin-$0$ Mott insulator when the exchange is antiferromagnetic. The Mott insulators occur from effective intra-triangle multi-orbital interactions and are adiabatically connected to the ground state of an isolated triangle. An antiferromagnetic spin exchange, as determined by the Goodenou…
Quantum spin liquid states, in which spins are quantum-mechanically delocalized in direction, have been so far studied for charge-localized Mott insulators arising from strong repulsive interaction. Recently, however, it was found that the doped Mott insulator with a triangular lattice, $κ$-(ET)$_4$Hg$_{2.89}$Br$_8$, exhibits both spin-liquid-like magnetism and metallic electrical conduction. Thus, it is now possible to experimentally explore how the spin liquidity affects the electrical conduction, an issue that has received a great deal of theoretical attention. Here, with a newly developed …
In an attempt to clarify the nature of the crossover from a Peierls band insulator to a Mott Hubbard insulator, we analyze ground-state and spectral properties of the one-dimensional half-filled Holstein Hubbard model using exact diagonalization techniques.
Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled product ground state. Exploiting the holographic duality, which maps the physics of densely entangled matter onto gravitational black hole physics, we show how Mott-insulators can be constructed departing from entangled non-Fermi liquid metallic states, such as the strange metals found in cuprate superconductors. These "entangled Mott insulators" have traits in c…
We introduce a novel extension of the Gutzwiller variational wavefunction able to deal with insulators that escape any mean-field like description, as for instance non-magnetic insulators. As an application, we study the Mott transition from a paramagnetic metal into a non-magnetic Peierls, or valence-bond, Mott insulator. We analyze this model by means of our Gutzwiller wavefunction analytically in the limit of large coordination lattices, where we find that: (1) the Mott transition is first order; (2) the Peierls gap is large in the Mott insulator, although it is mainly contributed by the el…
An analysis of Luttinger's theorem shows that -- contrary to recent claims -- it is not valid for a generic Mott insulator. For a two-orbital Hubbard model with two electrons per site the crossover from a non-magnetic correlated insulating phase (Mott or Kondo insulator) to a band insulator is investigated. Mott insulating phases are characterized by poles of the self-energy and corresponding zeros in the Greens functions defining a ``Luttinger surface'' which is absent for band insulators. Nevertheless, the ground states of such insulators with two electrons per unit cell are adiabatically co…
We use the dynamical mean field method to investigate electronic properties of heterostructures in which finite number of Mott-insulator layers are embedded in a spatially infinite band-insulator. The evolution of the correlation effects with the number of Mott insulating layers and with position in the heterostructure is determined, and the optical conductivity is computed. It is shown that the heterostructures are generally metallic, with moderately renormalized bands of quasiparticles appearing at the interface between the correlated and uncorrelated regions.
The question if a Mott insulator and a band insulator are fundamentally different has been the matter of intensive research recently. Here we consider a simple model which allows by tuning one parameter to go continously from a Mott insulator to band insulator. The model consists of two Hubbard systems connected by single particle hopping. The Hubbard Hamiltonian is solved by the Dynamical Mean-Field theory using Quantum Monte Carlo to solve the resulting quantum impurity problem. The quasiparticle spectral function is calculated. Here we focus on the optical conductivity and in particular on …
The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized Bernevig-Hughes-Zhang model that incorporates the Hubbard-like onsite Coulomb energy U in addition to the spin-orbit coupling term that causes band inversion. The topological and Mott insulating phases are realized by appropriately choosing smaller and larger values of U, respectively. As expected, the interface is found to be metallic because of the localized edge state. Wh…
We point out the generic competition between the Hund's coupling and the spin-orbit coupling in correlated materials, and this competition leads to an electronic dilemma between the Hund's metal and the relativistic insulators. Hund's metals refer to the fate of the would-be insulators where the Hund's coupling suppresses the correlation and drives the systems into correlated metals. Relativistic Mott insulators refer to the fate of the would-be metals where the relativistic spin-orbit coupling enhances the correlation and drives the systems into Mott insulators. These contradictory trends are…
We investigate properties of a topological Mott insulator in one dimension by examining the bulk topological invariant and the entanglement spectrum of a correlated electron model. We clarify how gapless edge states in a non-interacting topological band insulator evolve into spinon edge states in a topological Mott insulator. Furthermore, we propose a topological Mott transition, which is a new type of topological phase transition and never observed in free fermion systems. This unconventional transition occurs in spin liquid phases in the Mott insulator and is accompanied by zeros of the sing…
The Gutzwiller wave function for a strongly correlated model can, if supplemented with a long-range Jastrow factor, provide a proper variational description of Mott insulators, so far unavailable. We demonstrate this concept in the prototypical one-dimensional $t-t^\prime$ Hubbard model, where at half filling we reproduce all known phases, namely the ordinary Mott undimerized insulator with power-law spin correlations at small $t^\prime/t$, the spin-gapped metal above a critical $t^\prime/t$ and small $U$, and the dimerized Mott insulator at large repulsion.
We theoretically discover purely electronic polarization modes in THz frequency region in dimer Mott insulators $κ$-(BEDT-TTF)$_2$X. The unusual low-frequency modes arise from the coupling between the oscillation of intradimer electric dipole moments and that of alternating interdimer bond orders. These collective motions play an important role in the dynamical dielectric properties of the dimer Mott insulators. Near the phase boundary of the dimer Mott transition, the ferroelectric ground state is realized by introducing electron-lattice coupling.
Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical dopings required to drive the Mott transition using electronic structure calculations for the titanate family of perovskites, finding good agreement with experiment. The theory predicts the transition is percolative and should exhibit Coulomb frustration.
We provide the first unbiased evidence for a higher-order topological Mott insulator in three dimensions by numerically exact quantum Monte Carlo simulations. This insulating phase is adiabatically connected to a third-order topological insulator in the noninteracting limit, which features gapless modes around the corners of the pyrochlore lattice and is characterized by a $\mathbb{Z}_{4}$ spin-Berry phase. The difference between the correlated and non-correlated topological phases is that in the former phase the gapless corner modes emerge only in spin excitations being Mott-like. We also sho…
We derive the phase diagram for the one-dimensional model of a ferroelectric perovskite recently introduced by Egami, Ishihara and Tachiki [Science, {\bf 261}, 1307 (1993)]. We show that the interplay between covalency, ionicity and strong correlations results in a spontaneously dimerized phase which separates the weak-coupling band insulator from the strong-coupling Mott insulator. The transition from the band insulator to the dimerized phase is identified as an Ising critical point. The charge gap vanishes at this single point with the optical conductivity diverging as $σ(ω)\sim ω^{-3/4}$. T…
We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is accompanied by changes in both lattice and magnetic structures. Our findings have important implications because a magnetic field usually stabilizes the insulating ground state in a Mott-Hubbard system, thus calling for a deeper theoretical study to reexamine the magnetic field tuning of Mott systems with magnetic and electronic instabilities and spin-lattic…
By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator transition. The hopping exponent $α$ shows a systematic evolution from a value of $α=1/2$ deeper in the insulator to the conventional Mott value $α=1/3$ closer to the transition. This behavior, which we argue to be a universal feature of disordered Mott systems close to the metal-insulator transition, is shown to reflect the gradual emergence of disorder-induc…
The Mott insulator is the quintessential strongly correlated electronic state. We obtain complete insight into the physics of the two-dimensional Mott insulator by extending the slave-fermion (holon-doublon) description to finite temperatures. We first benchmark its predictions against state-of-the-art quantum Monte Carlo simulations, demonstrating quantitative agreement. Qualitatively, the short-ranged spin fluctuations both induce holon-doublon bound states and renormalize the charge sector to form the Hubbard bands. The Mott gap is understood as the charge gap renormalized downwards by thes…
The experimentally observed, ambipolar field-effect characteristics of Mott insulators are reproduced in the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. The formation of Schottky barriers, originating from the work-function difference, is taken into account by a potential satisfying the Poisson equation with an appropriate boundary condition. Then, these field-effect characteristics are shown to be related by unique current-voltage characteristics of metal-Mott-insulator interfaces.
We point out and explicitly demonstrate a close connection that exists between featureless Mott insulators and fractional quantum Hall liquids. Using magnetic Wannier states as the single-particle basis in the lowest Landau level (LLL), we demonstrate that the Hamiltonian of interacting bosons in the LLL maps onto a Hamiltonian of a featureless Mott insulator on triangular lattice, formed by the magnetic Wannier states. The Hamiltonian is remarkably simple and consists only of short-range repulsion and ring-exchange terms.
We study the topological properties of Bose-Mott insulators in one-dimensional non-Hermitian superlattices, which may serve as effective Hamiltonians for cold atomic optical systems with either two-body loss or one-body loss. We find that in the strongly repulsive limit, the Mott insulator states of the Bose-Hubbard model with a finite two-body loss under integer fillings are topological insulators characterized by a finite charge gap, nonzero integer Chern numbers, and nontrivial edge modes in a low-energy excitation spectrum under an open boundary condition. The two-body loss suppressed by t…
We investigate proximity effects in a correlated heterostructure of a two-dimensional Mott insulator (MI) and a topological insulator (TI) by employing inhomogeneous dynamical mean-field theory. We show that the edge state of the TI induces strongly renormalized mid-gap states inside the MI region, which still have a remnant of the helical energy-spectrum. The penetration of low-energy electrons, which is controlled by the interface tunneling $V$, largely enhances the electron mass inside the MI and also splits a single Dirac-cone at edge sites into the spatially-separated two Dirac-cones in t…
A theory of heterostructures comprised of LaTiO$_3$ (a Mott insulator) and SrTiO$_3$ (a band insulator) is presented. The band structure of the Ti $d$% -electrons is treated with a nearest neighbor tight-binding approximation; the electric fields arising from the La$^{3+}$/Sr$^{2+}$ charge difference and the carriers are treated within a Hartree approximation; and the on-site interactions are treated by unrestricted Hartree-Fock. The phase diagram as a function of interaction strength and layer number is determined and predictions are made for optical conductivity experiments. A note worthy fi…
We consider a heterostructure of a metal and a paramagnetic Mott insulator using an adaptation of dynamical mean field theory to describe inhomogeneous systems. The metal can penetrate into the insulator via the Kondo effect. We investigate the scaling properties of the metal-insulator interface close to the critical point of the Mott insulator. At criticality, the quasiparticle weight decays as 1/x^2 with distance x from the metal within our mean field theory. Our numerical results (using the numerical renormalization group as an impurity solver) show that the prefactor of this power law is e…
This is a summary of a central argument in recent review articles by the author (cond-mat/0109419, cond-mat/0211005, and cond-mat/0211027). An effective field theory is derived for the low energy spin singlet excitations in a paramagnetic Mott insulator with collinear spin correlations.
The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator is driven by a combination of charge transfer effects and enhanced correlation effects. Approaching a Mott insulating phase from the metallic side, we show that a dead layer forms at the surface of the solid, where quasiparticle amplitudes are exponentially suppressed. Surface correlation and charge transfer effects can be strongly impacted by changes of th…
We examine recombination processes of photocarriers in one-dimensional Mott insulators coupled to phonons. Performing density matrix renormalization group calculations, we find that, even for small electron-phonon coupling, many phonons are generated dynamically, which cause initial relaxation process after the irradiation. At the same time, spin-charge coupling coming from mixing of high- and low-energy states by the irradiation is suppressed. We discuss differences between Mott and band insulators in terms of relaxation dynamics.
It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two dimensions and lower, the smallest amount of disorder destabilizes the metal. The nature of the metal-insulator transition in an interacting system remains unresolved. Here we explore the effect of disorder on a strongly correlated Mott insulator without changing the carrier concentration. Angle resolved photoemission spectroscopy (ARPES) measurements on copper inte…
Motivated by recent experiments on the quantum-spin-liquid candidate material LiZn2Mo3O8, we study a single-band extended Hubbard model on an anisotropic Kagome lattice with the 1/6 electron filling. Due to the partial filling of the lattice, the inter-site repulsive interaction is necessary to generate Mott insulators, where electrons are localized in clusters, rather than at lattice sites. It is shown that these cluster Mott insulators are generally U(1) quantum spin liquids with spinon Fermi surfaces. The nature of charge excitations in cluster Mott insulators can be quite different from co…
Motivated by recent experiments on the quantum-spin-liquid candidate material LiZn2Mo3O8, we study a single-band extended Hubbard model on an anisotropic Kagome lattice with the 1/6 electron filling. Due to the partial filling of the lattice, the inter-site repulsive interaction is necessary to generate Mott insulators, where electrons are localized in clusters, rather than at lattice sites. We provide examples of such cluster Mott insulators and study the phase transitions between metallic states and cluster Mott insulators on an anisotropic Kagome lattice. It is shown that these cluster Mott…
Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material (that can be tuned through the metal-insulator Mott transition). The main focus is on barriers that are doped Mott insulators, and how the electronic charge reconstruction can create well-defined Mott insulating regions in a device whose thickness is governed by intrinsic materials properties, and hence may be able to be reproducibly made.
We study the low energy behavior of the one dimensional Hubbard model across the Mott metal-insulator phase transition in an external magnetic field. In particular we calculate elements of the dressed charge matrix at the critical point of the Mott transition for arbitrary Hubbard repulsion and magnetization numerically and, in certain limiting cases, analytically. These results are combined with a non-perturbative effective field theory approach to reveal how the breaking of time reversal symmetry influences the Mott transition.
The electronic structure of Mott insulators continues to be a major unsolved problem in physics despite more than half-century of intense research efforts. Well-developed momentum-resolved spectroscopies such as photoemission or neutron scattering cannot probe the full Mott gap. We report observation of dispersive charge excitations across the Mott gap in a high Tc parent cuprate Ca2CuO2Cl2 using high resolution resonant inelastic x-ray scattering shedding light on the anisotropy of Mott-gap. The results provide direct support for the Hubbard model to describe charge excitations across the Mot…
