Lead (Pb) halide perovskites have achieved great success in recent years due to their excellent optoelectronic properties, which is largely attributed to the lone-pair s orbital-derived antibonding states at the valence band edge. Guided by the key band-edge orbital character, a series of ns2-containing (i.e., Sn2+, Sb3+, Bi3+) Pb-free perovskite alternatives have been explored as potential photovoltaic candidates. On the other hand, based on the band-edge orbital components (i.e., M2+ s and p/X- p orbitals), a series of strategies have been proposed to optimize their optoelectronic properties by modifying the atomic orbitals and orbital interactions. Therefore, understanding the band-edge electronic features from the recently reported halide perovskites is essential for future material design and device optimization. Here, this Perspective first attempts to establish the band-edge orbital-property relationship using a chemically intuitive approach, and then rationalizes their superior properties and understands the trends in electronic properties. We hope that this Perspective will provide atomic-level guidance and insights toward the rational design of perovskite semiconductors with outstanding optoelectronic properties.
We predict the structural, electronic and optic properties of the inorganic Ge-based halide perovskites AGeX3 (A = Cs, Rb; X = I, Br, Cl) by using first-principles method. In particular, absolute electronic energy band levels are calculated using two different surface terminations of each compound, reproducing the experimental band alignment.
Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercal…
Chalcogenide perovskites have emerged as non-toxic and stable photovoltaic materials, acting as an alternative to lead halide hybrid perovskites having similar optoelectronic properties. In the present work, we report the electronic and optical properties of chalcogenide perovskites AZrS$_3$ (A=Ca, Sr, Ba) by using the density functional theory (DFT) and many-body perturbation theory (MBPT viz. G$_0$W$_0$ and BSE). This study includes excitonic analysis for the aforementioned systems. The exciton binding energy (E$_\textrm{B}$) is found to be larger than that of the halide perovskites, as the …
Inorganic metal-halide cubic perovskite semiconductors have become more popular in industrial applications of photovoltaic and optoelectronic devices. Among various perovskites, lead-free materials are currently most explored due to their non-toxic effect on the environment. In this study, the structural, electronic, optical, and mechanical properties of lead-free cubic perovskite materials FrBX3 (B = Ge, Sn; X = Cl, Br, I) are investigated through first-principles density-functional theory (DFT) calculations. These materials are found to exhibit semiconducting behavior with direct bandgap ene…
The electronic orbital characteristics at the band edges plays an important role in determining the electrical, optical and defect properties of perovskite photovoltaic materials. It is highly desirable to establish the relationship between the underlying atomic orbitals and the optoelectronic properties as a guide to maximize the photovoltaic performance. Here, using first-principles calculations and taking anion ordered Ruddlesden-Popper (RP) phase halide perovskites Cs$_{n+1}$Ge$_n$I$_{n+1}$Cl$_{2n}$ as an example, we demonstrate how to rationally optimize the optoelectronic properties (e.g…
In recent years, organic-inorganic hybrid perovskites have attracted wide attention due to their excellent optoelectronic properties in the application of optoelectronic devices. In the manufacturing process of perovskite solar cells, perovskite films inevitably have residual stress caused by non-stoichiometry components and the external load. However, their effects on the structural stability and photovoltaic performance of perovskite solar cells are still not clear. In this work, we investigated the effects of external strain on the structural stability and optoelectronic properties of tetra…
Owing to the energy shortages and various severe adverse effects of traditional fossil fuel power generation mechanisms, photovoltaic and thermoelectric materials are considered as the potential candidates for building non-traditional, efficient, and eco-friendly power generation portfolios. Lead-based perovskites have emerged as highly efficient, abundantly available, and low-cost materials for such applications but there are two major challenges i.e. chemical instability and the danger of toxic lead leaching that can badly affect both the environment and human health. Therefore, in search of…
Chalcogenide perovskites have received considerable interest in photovoltaic research community owing to their stability (thermal and aqueous), non-toxicity and lead free composition. However, to date a theoretical study mainly focusing on the excitonic and polaronic properties are not explored rigorously, due to its huge computational demand. Herein, we capture the excitonic and polaronic effects in a series of chalcogenide perovskites ABS$_3$ where A=Ba, Ca, Sr, and B=Hf, Sn by employing state-of-the art hybrid density functional theory and many body perturbative approaches viz. GW and BSE. …
Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS3 thin films at above 1000 C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS3 thin films at temperatures as low as 500 C, by changing the chemical reaction pathway. The single phase BaZrS3 thin film was confirmed by X-ray diffraction and Ra…
Surface states are ubiquitous to semiconductors and significantly impact the physical properties and consequently the performance of optoelectronic devices. Moreover, surface effects are strongly amplified in lower dimensional systems such as quantum wells and nanostructures. Layered halide perovskites (LHPs) are 2D solution-processed natural quantum wells, where optoelectronic properties can be tuned by varying the perovskite layer thickness. They are efficient semiconductors with technologically relevant stability. Here, a generic elastic model and electronic structure modelling are applied …
Interfacial effect on the optoelectronic and piezoelectric properties of Ge-Sn terminated Halide Perovskite heterostructure from first-principles study
Understanding the intrinsic charge transport in organolead halide perovskites is essential for the development of high-efficiency photovoltaics and other optoelectronic devices. Despite the rapid advancement of the organolead halide perovskite in photovoltaic and optoelectronic applications, the intrinsic charge carrier transport in these materials remains elusive partly due to the difficulty of fabricating electrical devices and obtaining good electrical contact. Here, we report the fabrication of organolead halide perovskite microplates with monolayer graphene as low barrier electrical conta…
Electronic and stability properties of quasi-2D alkylammonium perovskites are investigated using density functional theory (DFT) calculations and validated experimentally on selected classes of compounds. Our analysis is focused on perovskite structures of formula (A)$_2$(A$'$)$_{n-1}$Pb$_n$X$_{3n+1}$, with large cations A = butyl-, pentyl-, hexylammonium (BA, PA, HXA), small cations A$'$ = methylammonium, formamidinium, ethylammonium, guanidinium (MA,FA,EA,GA) and halogens X = I, Br, Cl. The role of the halogen ions is outlined for the band structure, stability and defect formation energies. …
Non-toxicity and stability make two-dimensional (2D) bismuth halide perovskites better alternatives to lead-based ones for optoelectronic applications and catalysis. In this work, we synthesize sub-micron size colloidal quasi-2D Cs3Bi2I9 perovskite nanosheets and study their generation and relaxation of charge carriers. Steady-state absorption spectroscopy reveals an indirect bandgap of 2.07 eV, which is supported by the density functional theory calculated band structure. The nanosheets do not show detectable photoluminescence at room temperature at band-edge excitation which is attributed to…
Halide perovskites are promising materials for light-emitting and light-harvesting applications. In this context, two-dimensional perovskites such as nanoplatelets or Ruddlesden-Popper and Dion-Jacobson layered structures are important because of their structural flexibility, electronic confinement, and better stability. This review article brings forth an extensive overview of the recent developments of two-dimensional halide perovskites both in the colloidal and non-colloidal forms. We outline the strategy to synthesize and control the shape and discuss different crystalline phases and optoe…
Recently, direct bandgap double perovskites are becoming more popular among photovoltaic research community owing to their potential to address issues of lead (Pb) toxicity and structural instability inherent in lead halide (simple) perovskites. In this study, In-Ag based direct bandgap double perovskite, Cs2AgInCl6 (CAIC), is treated with transition metal doping to improve the optoelectronic properties of the material. Investigations of structural and optoelectronic properties of Cu-doped CAIC, Cs2Ag(1-x)CuxInCl6, are done using ab-initio calculations with density functional theory (DFT) and …
Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. This behavior has been attributed to spatial fluctuations in the population of sub-bandgap electronic states that act as trap-mediated non-radiative recombination sites. However, the origin of the variations, trap states and extent of the defect tolerance remains a topic of deb…
Despite their puzzling vibrational characteristics that include strong signatures of anharmonicity and thermal disorder already around room temperature, halide perovskites exhibit favorable optoelectronic properties for applications in photovoltaics and beyond. Whether these vibrational properties are advantageous or detrimental to their optoelectronic properties remains, however, an important open question. Here, this issue is addressed by investigation of the {finite-temperature optoelectronic properties} in the prototypical cubic CsPbBr$_3$, using first-principles molecular dynamics based o…
Lead-free halide double perovskites with the formula of quaternary A$_2^+$B'B'$^{3+}$X$_6^-$ have recently attracted intense interest as alternatives to lead-halide-perovskite-based optoelectronic materials for their non-toxicity and enhanced chemical and thermodynamic stability. However, the understanding of intrinsic defect properties and their effects on carrier transport and Fermi level tuning is still limited. In this paper, we show that, by exploring the phase diagram of a halide double perovskite, one can control the effects of intrinsic defects on carrier trapping and Fermi level pinni…
This work summarizes recent development in the filed of nanocrystal and their use for optoelectronics. After the introduction on nanocrystals and their transport properties, the manuscript is splitted in three parts : (i) narrow abnd gap materials, (ii) 2D colloidal material and (iii) van der waals heterostrctures
A Universal Polybromide Melt Strategy for the Direct Conversion of Metals into Optoelectronic-Grade Bromide Perovskites
Ben Gurion University of the Negev（本-古里安大学）；Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev（本-古里安大学伊尔斯·卡茨纳米科学与技术研究所）
Entirely inorganic perovskites have attracted enormous attention of late owing to their outstanding applications in optoelectronics including highly stable perovskite solar cells. In-depth understanding of the optoelectronic and transport properties of such materials are vital for practical implementation of the same. The carrier transport properties of the electronic devices based on perovskite materials significantly depend on the effective mass of the respective charge carriers. Here, we have performed first principle calculations with FP-LAPW method for the orthorhombic rubidium lead halid…
Studying optoelectronic properties in FAPb$_{1-x}$Sn$_x$I$_3$ perovskites as a function of the lead:tin content, Parrott et al. observed the broadest luminescence linewidth and the largest luminescence Stokes shift in mixed compositions with Sn $ < 25$% and with $> 0.85$%. Since the largest effects of alloy disorder were expected for the 50:50 composition, it was concluded that the revealed disorder effects might arise from extrinsic factors that can be eliminated upon further crystal growth optimization. This comment shows that the largest effects of alloy disorder for perfectly random fluctu…
The observation of low energy edge photoluminescence and its beneficial effect on the solar cell efficiency of Ruddlesden-Popper perovskites has unleashed an intensive research effort to reveal its origin. This effort, however, has been met with more challenges as the underlying material structure has still not been identified; new modellings and observations also do not seem to converge. Using 2D (BA)2(MA)2Pb3Br10 as an example, we show that 3D MAPbBr3 is formed due to the loss of BA on the edge. This self-formed MAPbBr3 can explain the reported edge emission under various conditions, while t…
Tuning the optoelectronic properties of wide bandgap perovskites: Data-driven insights from combinatorial synthesis and high-throughput experimentation
Empa–Swiss Federal Laboratories for Materials Science and Technology（瑞士联邦材料科学与技术研究院）
Metal halide perovskites have recently emerged as promising materials for the next generation of optoelectronic devices owing to their remarkable intrinsic properties. In the growth of perovskite crystals, the substrates are essential and play a vital role. Herein, substrate engineering in the growth of perovskite crystals have been reviewed. Particularly, various modified strategies and corresponding mechanism based on the substrate engineering applied to the optimization of thickness, nucleation and growth rate are highlighted. Then the alterable adhesion to substrates will also be discussed…
We successfully dope the magnetically silent double perovskite semiconductor Sr2GaSbO6 to induce ferromagnetism and tune its band gap, with Ga3+ partially substituted by the magnetic trivalent cation Mn3+, in a rigid cation ordering with Sb5+. Our new ferromagnetic semiconducting Sr2Ga1-xMnxSbO6 double perovskite, which crystallizes in tetragonal symmetry (space group I4/m) and has tunable ferromagnetic ordering temperature and band gap, suggests that magnetic ion doping of double perovskites is a productive avenue towards obtaining materials for application in next-generation oxide-based spin…
Metal-halide perovskites are promising materials for future optoelectronic applications. One intriguing property, important for many applications, is the tunability of the band gap via compositional engineering. While experimental reports on changes in absorption or photoluminescence show rather good agreement for wide variety of compounds, the physical origins of these changes, namely the variations in valence band and conduction band positions, are not well characterized. Knowledge of these band positions is of importance for optimizing the energy level alignment with charge extraction layer…
Structural stability, electronic structure and optical properties of CH3NH3BaI3 hybrid perovskite is examined both from theory as well as experiment. Solution-processed thin films of CH3NH3BaI3 exhibited a high band gap of approximately 3.87 eV, which is in excellent agreement with the theoretical estimate of 4 eV. Also, the XRD patterns of the thin films match well with the l-peaks of the simulated pattern obtained from the relaxed unit cell of CH3NH3BaI3, crystallizing in the I4/mcm space group, with lattice parameters, a = 9.30 A, c = 13.94 A. Atom projected density of state and band struct…
Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$
Halide perovskites perform remarkably in optoelectronic devices including tandem photovoltaics. However, this exceptional performance is striking given that perovskites exhibit deep charge carrier traps and spatial compositional and structural heterogeneity, all of which should be detrimental to performance. Here, we resolve this long-standing paradox by providing a global visualisation of the nanoscale chemical, structural and optoelectronic landscape in halide perovskite devices, made possible through the development of a new suite of correlative, multimodal microscopy measurements combining…
It is thought that growing large, oriented grains of perovskite can lead to more efficient devices. We study MAPbI3 films fabricated via Flash Infrared Annealing (FIRA) consisting of highly oriented, large grains. Domains observed in the SEM are often misidentified with crystallographic grains, but SEM images don't provide diffraction information. We measure the grain size, crystal structure and grain orientation using Electron Back-Scattered Diffraction (EBSD) and we study how these affect the optoelectronic properties as characterized by local photoluminescence (PL) and time-resolved microwa…
Organometallic perovskite is one of the potential materials in the various optoelectronic research fields. This research work demonstrates the synthesis of CH3NH3PbI3-ZnS microrods via one-step spin coating for optoelectronic applications. Incorporation of ZnS in the perovskite material caused bandgap variation in the visible wavelength range.
Exploring 2D/Quasi-2D Ruddlesden-Popper Perovskite A$_{n+1}$Hf$_n$S$_{3n+1}$ (A = Ca, Sr, and Ba; n = 1-3) for Optoelectronics using Many-Body Perturbation Theory
Epitaxial III-V semiconductor heterostructures are key components in modern microelectronics, electro-optics and optoelectronics. With superior semiconducting properties, halide perovskite materials are rising as promising candidates for coherent heterostructure devices. In this report, spinodal decomposition is proposed and experimentally implemented to produce epitaxial double heterostructures in halide perovskite system. Pristine epitaxial mixed halide perovskites rods and films were synthesized via Van der Waals epitaxy by chemical vapor deposition method. At room temperature, photon was a…
Perovskite compounds have the potential to harvest solar energy as well as exploit the thermoelectric potential of a number of available materials. Here, we present the electronic, structural, thermoelectric, and optical properties of Cs2AgSbX6 (X = Cl, Br, I) perovskite with the help of the density functional theory (DFT). The WC-GGA approximation was used to calculate the structural parameters. All these compounds crystalize in a cubic unit cell with lattice constant increasing from 10.65 Å (Cl) to 11.14 Å (Br) to 11.86 Å (I). The mBJ-functional shows a semiconducting nature for these compou…
BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10^19-10^20 cm…
Previous theoretical calculations show azetidinium has the right radial size to form a 3D perovskite with lead halides [1], and has been shown to impart, as the A-site cation of ABX3 unit, beneficial properties to ferroelectric perovskites [2]. However, there has been very limited research into its use as the cation in lead halide perovskites to date. In this communication we report the synthesis and characterization of azetidinium-based lead mixed halide perovskite colloidal nanocrystals. The mixed halide system is iodine and chlorine unlike other reported nanocrystals in the literature where…
Perovskite-based optoelectronic devices have shown great promise for solar conversion and other optoelectronic applications, but their long-term performance instability is regarded as a major obstacle to their widespread deployment. Previous works have shown that the ultralow thermal conductivity and inefficient heat spreading might put an intrinsic limit on the lifetime of perovskite devices. Here, we report the observation of a remarkably efficient thermal conductance, with conductivity of 11.2 +/- 0.8 W m^-1 K^-1 at room temperature, in densely-packed perovskite CH3NH3PbI3 films, via noncon…
Hybrid organic-inorganic halide perovskites have emerged as a disruptive new class of materials, exhibiting optimum properties for a broad range of optoelectronic applications, most notably for photovoltaics. The first report of highly efficient organic-inorganic perovskite solar cells in 2012 marked a new era for photovoltaics research, reporting a power conversion efficiency of over 10%. Only five years after this discovery, perovskite photovoltaic devices have reached a certified efficiency of 22.7%, making them the first solution processable technology to surpass thin film and multi-crysta…
The discovery of lead free all-inorganic alloyed double perovskites have revolutionized photovoltaic research, showing promising light emitting efficiency and its tunability. However, detailed studies regarding optical, exciton, polaron and transport properties remain unexplored. Here, we report a theoretical study on the variation of carrier-lattice interaction and optoelectronic properties of pristine as well as alloyed Cs$_2$AgInCl$_6$ double perovskites. We have employed many-body perturbation theory (G$_0$W$_0$@HSE06) and density functional perturbation theory (DFPT) to compute exciton bi…
First-Principles Study of Novel Lead-Free Double Perovskite \b{eta}2SnGeX6 (\b{eta} = K, Rb; X = Cl, Br, I) for thermomechanical, optoelectronic and outstanding thermoelectric applications
