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arXiv 2011.13819cond-mat.supr-con
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通过双频介质谐振器微波测量研究Fe(Se,Te)薄膜的钉扎、磁通流电阻率和各向异性

Pinning, flux flow resistivity and anisotropy of Fe(Se,Te) thin films from microwave measurements through a bitonal dielectric resonator

Nicola Pompeo, Andrea Alimenti, Kostiantyn Torokhtii, Giulia Sylva, Valeria Braccini, Enrico Silva

AI总结:

本研究利用双频介质谐振器在两个微波频率下测量Fe(Se,Te)薄膜的涡旋运动表面阻抗,结合BGL标度理论分析其各向异性,得到与文献一致的低场质量各向异性值,并证实钉扎以各向同性质点钉扎为主。

摘要:

我们报道了生长在CaF₂衬底上的Fe(Se,Te)薄膜的涡旋运动表面阻抗的各向异性。我们在固定温度下,利用双频介质谐振器,在~16 GHz和~27 GHz两个不同频率下,探究了该阻抗对最高1.2 T的磁场强度以及磁场方向(平行和垂直于样品c轴)的依赖关系。我们通过利用高频动力学的标准模型得到了自由磁通流电阻率ρ_ff,而角度依赖性则是在著名且广泛使用的各向异性超导体Blatter-Geshkenbein-Larkin(BGL)标度理论的框架下进行研究的。结果表明,磁通子磁通流电阻率与标度律的预测高度吻合。通过标度分析,我们得到了约为1.8的低场质量各向异性,该值完全处于文献报道的数值范围内。钉扎常数的角度依赖性表明,钉扎以随机的各向同性质点钉扎为主,这与临界电流密度的测量结果一致。

英文摘要:

We report on the anisotropy of the vortex motion surface impedance of a \fst thin film grown on a CaF$_2$ substrate. The dependence on the magnetic field intensity up to 1.2 T and direction, both parallel and perpendicular to the sample $c$-axis, was explored at fixed temperature at two distinct frequencies, $\sim16\;$GHz and $\sim27\;$GHz, by means of bitonal dielectric resonator. The free flux flow resistivity $ρ_{ff}$ was obtained by exploiting standard models for the high frequency dynamics, whereas the angle dependence was studied in the framework of the well known and widely used Blatter-Geshkenbein-Larkin (BGL) scaling theory for anistropic superconductors. Excellent agreement with the scaling law prescription by the fluxon flux flow resistivity was obtained. From the scaling analysis, a low-field mass anisotropy $\sim1.8$ was obtained, well within the value ranges reported in literature. The angular dependence of the pinning constant suggests that pinning is dominated by random, isotropic point pins, consistently with critical current density measurements.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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