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arXiv 0802.2205cond-mat.supr-con
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电子掺杂超导薄膜的磁性和输运性质:对对称性、钉扎和自旋涨落

Magnetic and transport properties of electron-doped superconducting thin films: Pairing symmetry, pinning and spin fluctuations

S. Sergeenkov, A. J. C. Lanfredi, F. M. Araujo-Moreira

摘要:

在本章中,我们回顾了我们的最新研究结果的磁性(交流磁化率)和输运(电阻率)的Pr 1.85 Ce 0.15 CuO 4(PCCO)和Sm 1.85 Ce 0.15 CuO 4(SCCO)薄膜的脉冲激光沉积技术生长。我们的研究的三个主要课题将被覆盖。首先,我们从一个彻底的讨论的配对对称机制,在最佳掺杂SCCO薄膜的基础上提取的高精度的温度分布的穿透深度。特别是,我们发现,以上和以下的交叉温度T*=0.22T_C,我们的薄膜是最好的拟合,分别由一个线性和二次的依赖关系,与物理上合理的值的d波节点间隙参数和顺磁杂质散射率。我们的下一个主题与我们的薄膜中的通量分布有关。更准确地说,我们提出了一个比较研究,在低磁场提取他们的交流磁化率的钉扎能力。根据我们的薄膜的均匀性水平,两种不同类型的不可逆线已被发现。所获得的结果通过考虑到低场晶界钉扎的临界态模型来描述。最后,我们展示了我们最近的结果,正常状态下的温度行为的电阻率R(T)的高品质的最佳掺杂SCCO薄膜。除了电子-声子和电子-电子散射过程的预期贡献外,我们还观察到T= 87 K附近的R(T)的不寻常的台阶状行为,我们将其归因于由于Sm 3+通过Cu 2 +-Sm 3+相互作用引起的自旋涨落引起的热激发的表现。

英文摘要:

In this Chapter we review our latest results on magnetic (AC susceptibility) and transport (resistivity) properties of Pr1.85Ce0.15CuO4 (PCCO) and Sm1.85Ce0.15CuO4 (SCCO) thin films grown by pulsed laser deposition technique. Three main topics of our studies will be covered. We start with a thorough discussion of the pairing symmetry mechanisms in optimally-doped SCCO thin films based on the extracted with high accuracy temperature profiles of penetration depth. In particular, we found that above and below a crossover temperature T*=0.22T_C, our films are best-fitted by a linear and quadratic dependencies, respectively, with physically reasonable values of d-wave node gap parameter and paramagnetic impurity scattering rate. Our next topic is related to the flux distribution in our films. More precisely, we present a comparative study on their pinning ability at low magnetic fields extracted from their AC susceptibilities. Depending on the level of homogeneity of our films, two different types of the irreversibility line have been found. The obtained results are described via the critical-state model taking into account the low-field grain-boundary pinning. And finally, we demonstrate our recent results on the normal state temperature behavior of resistivity R(T) for the high-quality optimally-doped SCCO thin films. In addition to the expected contributions from the electron-phonon and electron-electron scattering processes, we also observed an unusual step-like behavior of R(T) around T=87K which we attributed the to the manifestation of thermal excitations due to spin fluctuations induced by Sm3+ moments through Cu2+-Sm3+ interaction.

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