Enhanced superconducting pairing interaction in indium-doped tin telluride

Anomalous scattering in superconducting indium-doped tin telluride

Results of resistivity, Hall effect, magnetoresistance, susceptibility and heat capacity measurements are presented for single crystals of indium-doped tin telluride with compositions Sn$_{.988-x}$In$_x$Te where $0 \leq x \leq 8.4 %$, along with microstructural analysis based on transmission electron microscopy. For small indium concentrations, $x \leq 0.9 %$ the material does not superconduct above 0.3 K, and the transport properties are consistent with simple metallic behavior. For $x \geq 2.7 %$ the material exhibits anomalous low temperature scattering and for $x \geq 6.1 %$ bulk supercond…

分子束外延生长碲化锡薄膜中的超导电性

Superconductivity in tin telluride films grown by molecular beam epitaxy

研究在分子束外延生长的高质量铟掺杂碲化锡薄膜中发现超导，揭示临界温度、临界场及电子—声子耦合随铟浓度和载流子浓度的演化及Pauli极限违背。

Reversible Superconductivity in Electrochromic Indium-Tin Oxide Films

Transparent conductive indium tin oxide (ITO) thin films, electrochemically intercalated with sodium or other cations, show tunable superconducting transitions with a maximum $T_c$ at 5 K. The transition temperature and the density of states, $D(E_F)$ (extracted from the measured Pauli susceptibility $χ_p$ exhibit the same dome shaped behavior as a function of electron density. Optimally intercalated samples have an upper critical field $\approx 4$ T and $Δ/{k_BT_c} \approx 2.0$. Accompanying the development of superconductivity, the films show a reversible electrochromic change from transpare…

Parity-preserving and magnetic field resilient superconductivity in indium antimonide nanowires with tin shells

We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducting gap in the range 600-700 micro-eV. Superconductivity persists up to 4 T in magnetic field. A tin island exhibits the coveted two-electron charging effect, a hallmark of charge parity stability. The…

Indium substitution effect on the topological crystalline insulator family (Pb$_{1-x}$Sn$_{x}$)$_{1-y}$In$_{y}$Te: Topological and superconducting properties

Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb$_{1-x}$Sn$_{x}$)$_{1-y}$In$_{y}$Te. For samples with a tin concentration $x\le50\%$, the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ~2% indium doping the samples show weak-metallic behavior, similar to their parent compounds; with ~6% indium doping, samples have true bulk-insulating resistivity and pre…

Improved superconducting properties of skutterudite La3Co4Sn13 with indium substitution

We report on two fold increase in superconducting transition temperature of La3Co4Sn13 by substituting indium at the tin site. The transition temperature of this skutterudite is observed to increase from 2.5 K to 5.1 K for 10 % indium substituted sample. The band structure and density of states calculations also indicate such a possibility. The compounds exhibit type - II superconductivity and the values of lower critical field (Hc1), upper critical field (Hc2), Ginzburg - Landau coherence length , penetration depth and GL parameter are estimated to be 0.0028 T, 0.68 T, 21.6 nm, 33.2 nm and 1.…