用于形成超导纳米接触的电介质的电击穿
Electrical breakdown of a dielectric for the formation of a superconducting nanocontact
摘要：
铌和50%铟和50%锡的合金的膜电极之间的介电纳米层的电击穿形成电极之间的该合金的桥。电桥电阻取决于击穿电流。桥的长度等于电介质的厚度（30 nm），并且其直径为25 nm。计算得到的合金在0 K时的相干长度与桥的长度接近。在0 K温度下，电阻为1 Ω的电桥的临界电流计算值为2 mA。它的结论是，这样的桥应该有约瑟夫森接触的性能在低于合金的临界温度（6.5 K）的温度。
英文摘要：
Electrical breakdown of the dielectric nanolayer between film electrodes of niobium and an alloy of 50% indium and 50% tin forms a bridge of this alloy between the electrodes. The bridge resistance depends on the breakdown current. The length of the bridge is equal to the thickness of the dielectric (30 nm), and its diameter is 25 nm. The calculated coherence length of the alloy at 0 K is close to the length of the bridge. The calculated critical current of a bridge with a resistance of 1 Ω at a temperature of 0 K is 2 mA. It is concluded that such a bridge should have the properties of a Josephson contact at a temperature lower than the critical temperature of the alloy (6.5 K).
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