In Mn$_3$X (X=Sn, Ge) antiferromagnets domain walls are thick and remarkably complex because of the non-collinear arrangement of spins in each domain. A planar Hall effect (PHE), an electric field perpendicular to the applied current but parallel to the applied magnetic field, was recently observed inside the hysteresis loop of Mn$_3$Sn. The sign of the PHE displayed a memory tuned by the prior orientation of the magnetic field and its history. We present a study of PHE in Mn$_3$Ge extended from room temperature down to 2 K and show that this memory effect can be manipulated by either magnetic field or thermal cycling. We show that the memory can be wiped out if the prior magnetic field exceeds 0.8 T or when the temperature exceeds $T_\mathrm{N}$. We also find a detectable difference between the amplitude of PHE with zero-field and field thermal cycling. The ratio between the PHE and the anomalous Hall effect (AHE) decreases slightly as temperature is increased from 2 K to $T_{\rm{N}}$, tracks the temperature dependence of magnetization. This erasable memory effect may be used for data storage.
Antiferromagnetic (AFM) materials recently have shown interest in the research in spintronics due to its zero stray magnetic field, high anisotropy, and spin orbit coupling. In this context, the bi-metallic AFM Mn2Au has drawn attention because it exhibits unique properties and its Neel temperature is very high. Here, we report spin pumping and inverse spin Hall effect investigations in Mn2Au and CoFeB bilayer system using ferromagnetic resonance. We found large spin Hall angle θ_SH = 0.22
The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) are observed in a Cr2O3/Ta structure. The structural and surface morphology of Cr2O3/Ta bilayers have been investigated. Temperature dependence of longitudinal and transverse resistances measurements confirm the relationship between SMR and AHE signals in Cr2O3/Ta structure. By means of temperature dependent magnetoresistance measurements, the physical origin of SMR in the Cr2O3/Ta structure is revealed, and the contribution to the SMR from the spin current generated by AHE has been proved. The so-called boundary magnetizati…
We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds, Mn$_3X$ ($X$ = Ge, Sn, Ga, Ir, Rh and Pt) by $ab~initio$ band structure and Berry phase calculations. These studies reveal large and anisotropic values of both the intrinsic anomalous Hall effect and spin Hall effect. The Mn$_3X$ materials exhibit a non-collinear antiferromagnetic order which, to avoid geometrical frustration, forms planes of Mn moments that are arranged in a Kagome-type lattice. With respect to these Kagome planes, we find that b…
Adler-Bell-Jackiw chiral anomaly is a representative feature arising from the topological nature in topological semimetal. We report the first experimental observation of giant planar Hall effect in type-II Weyl semimetal WTe2. Our comprehensive analyes of the experimental data demonstrate that the detected planar Hall effect is originated from the chiral anomaly of Weyl fermions. Unlike the somewhat elusive negative magnetoresistance, the planar Hall effect is robust and easy to be detected in type-II Weyl semimetal. This work reveals that the planar Hall effect is an effective transport prob…
We investigate the observation of negative spin Hall magnetoresistance (SMR) in antiferromagnetic Cr2O3/Ta bilayers at low temperature. The sign of the SMR signals is changed from positive to negative monotonously from 300 K to 50 K. The change of the signs for SMR is related with the competitions between the surface ferromagnetism and bulky antiferromagnetic of Cr2O3. The surface magnetizations of Cr2O3 (0001) is considered to be dominated at higher temperature, while the bulky antiferromagnetics gets to be robust with decreasing of temperature. The slopes of the abnormal Hall curves coincide…
We report a combined theoretical and experimental investigation of magnetic proximity and Hall transport in Pt/Cr bilayers. Density functional theory indicates that an interfacial magnetization can be induced in the Pt layer and a strong magnetocrystalline anisotropy with an easy axis out of plane arises in the antiferromagnet. A signal ascribed to the anomalous Hall effect is detected and associated to the interface between Pt and Cr layers. We show that this effect originates from the combination of proximity-induced magnetization and a nontrivial topology of the band structure at the interf…
An electric method for measuring magnetic anisotropy in antiferromagnetic insulators (AFIs) is proposed. When a metallic film with strong spin-orbit interactions, e.g., platinum (Pt), is deposited on an AFI, its resistance should be affected by the direction of the AFI N eel vector due to the spin Hall magnetoresistance (SMR). Accordingly, the direction of the AFI N eel vector, which is affected by both the external magnetic field and the magnetic anisotropy, is reflected in resistance of Pt. The magnetic field angle dependence of the resistance of Pt on AFI is calculated by consider- ing the …
We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction structure being replaced by a single layer film.
Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in signific…
We investigate topological features of electronic structures which produce large anomalous Hall effect in the non-collinear antiferromagnetic metallic states of anti-perovskite manganese nitrides by first-principles calculations. We first predict the stable magnetic structures of these compounds to be non-collinear antiferromagnetic structures characterized by either $T_{1g}$ or $T_{2g}$ irreducible representation by evaluating the total energy for all of the magnetic structures classified according to the symmetry and multipole moments. The topology analysis is next performed for the Wannier …
It is widely known that quantum spin Hall (QSH) insulator can be viewed as two copies of quantum anomalous Hall (QAH) insulator with opposite local magnetic moments. However, nearly every QSH insulator discovered so far is a nonmagnetic semiconductor. Due to the vanishing local magnetic moment of each copy, the QAH states only conceptually exist in these QSH insulators. In this work, we show a realistic construction of QSH states with finite local magnetic moment by staking bilayer QAH insulators. Our explicit construction benefits from an effective QAH model with a large topological gap and i…
Here, we propose quantum spin Hall-like phononic states in van der Waals bilayer systems with antiferromagnetic ordering. Antiferromagnetic ordering in bilayer systems with small interlayer interaction makes the total Chern number zero, where the Chern numbers for each layer are opposite to each other. In bilayer CrI3 where antiferromagnetic ordering has been experimentally demonstrated, we show that the quantum spin Hall-like states appear with spatially separated chiral edge modes.
The planar Hall effect of IrMn on an yttrium iron garnet (YIG = Y3Fe5O12) was measured in the magnetic field rotating in the film plane. The magnetic field angle dependence of planar Hall resistance (PHR) has been observed in YIG/IrMn bilayer at different temperatures, while the GGG/IrMn (GGG= Gd3Ga5O12) shows constant PHR for different magnetic field angles at both 10 K and 300 K. This provides evidence that IrMn has interfacial spins which can be led by FM in YIG/IrMn structure. A hysteresis can be observed in PHR-magnetic field angle loop of YIG/IrMn films at 10 K, indicating the irreversib…
Magnetotransport is at the center of the spintronics. Mn3Sn, an antiferromagnet that has a noncollinear 120° spin order, exhibits large anomalous Hall effect (AHE) at room temperature. But such a behavior has been remained elusive in Mn3Sn films. Here we report the observation of robust AHE up to room temperature in quasi-epitaxial Mn3Sn thin films, prepared by magnetron sputtering. The growth of both (11-20)- and (0001)-oriented Mn3Sn films provides a unique opportunity for comparing AHE in three different measurement configurations. When the magnetic field is swept along (0001) plane, such a…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct observation of the antiferromagnetic state, however, is challenging due to the absence of a macroscopic magnetization. Here, we show that the spin Hall magnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spin structure via simple electrical transport experiments by investigating the easy-plane antiferromagnetic insulators $α$-Fe2O3 (hematite) …
The topological Hall effect (THE), as one of the primary manifestations of non-trivial topology of chiral skyrmions, is traditionally used to detect the emergence of skyrmion lattices with locally ferromagnetic order. In this work we demonstrate that the appearance of non-trivial two-dimensional chiral textures with locally {\it anti}-ferromagnetic order can be detected through the spin version of the THE $-$ the topological spin Hall effect (TSHE). Utilizing the semiclassical formalism, here used to combine chiral antiferromagnetic textures with a density functional theory description of the …
Detecting the orientation of the Néel vector is a major research topic in antiferromagnetic spintronics. Here we recognize the intrinsic nonlinear Hall effect, which is independent of the relaxation time, as a prominent contribution to the time-reversal-odd second order conductivity and can be used to detect the flipping of the Néel vector. In contrast, the Berry-curvature-dipole-induced nonlinear Hall effect depends linear on relaxation time and is time-reversal-even. We study the intrinsic nonlinear Hall effect in an antiferromagnetic metal: tetragonal CuMnAs, and show that its nonlinear Hal…
In this work we deal with doubly decorated Ising-Heisenberg models on planar lattices. Applying the generalized decoration-iteration transformation we obtain exact results for the antiferromagnetic version of the model. The existence of a new quantum dimerized phase is predicted and its physical properties are studied and analyzed. Particular attention has been paid to the investigation of the phase boundaries, pair-correlation functions and specific heat. A possible application of the present work to some molecular magnets is also drawn.
TmFeO$_3$ (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 K and 94 K in single crystals. In this temperature region, the Néel vector continuously rotates from the crystallographic $c$-axis (below 82 K) to the $a$-axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at THz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for reading out the magnetic state…
We report on spin Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in single crystal of the rare-earth antiferromagnet DyFeO$_{3}$ with a thin Pt film contact. The angular shape and symmetry of the SMR at elevated temperatures reflect the antiferromagnetic order of the Fe$^{3+}$ moments as governed by the Zeeman energy, the magnetocrystalline anisotropy and the Dzyaloshinskii-Moriya interaction. We interpret the observed linear dependence of the signal on the magnetic field strength as evidence for field-induced order of the Dy$^{3+}$ moments up to room temperature. At and below the …
Anomalous Hall enhancement in fully compensated non-collinear antiferromagnetic Cr-doped Mn3Sn
National University of Singapore（新加坡国立大学）；National University of Singapore (Chongqing) Research Institute（新加坡国立大学（重庆）研究院）；Nanyang Technological University（南洋理工大学）；Nanjing University（南京大学）；Central South University（中南大学）
The macroscopic signature for Weyl nodes so far has been the negative longitudinal magnetoresistance arising from the chiral anomaly. However, negative longitudinal magnetoresistance is not unique to chiral anomaly and can arise due to completely different mechanisms such as current jetting or in ferromagnetic systems due to the suppression of scattering with magnons. Therefore, a macroscopic effect that can be uniquely attributed to the presence of Weyl nodes is desirable. Here we show that the planar Hall effect could be a hallmark for Weyl nodes. We investigated the anisotropic magnetoresis…
We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain switching patterns obser…
Ab initio prediction of anomalous Hall effect in antiferromagnetic CaCrO$_3$
Institute of Scientific and Industrial Research, Osaka University（大阪大学科学工业研究所）；Department of Precision Engineering, Graduate School of Engineering, Osaka University（大阪大学大学院工学研究科精密工程专攻）
We consider the current-induced dynamics of insulating antiferromagnets in a spin Hall geometry. Sufficiently large in-plane currents perpendicular to the Néel order trigger spontaneous oscillations at frequencies between the acoustic and the optical eigenmodes. The direction of the driving current determines the chirality of the excitation. When the current exceeds a threshold, the combined effect of spin pumping and current-induced torques introduces a dynamic feedback that sustains steady-state oscillations with amplitudes controllable via the applied current. The ac voltage output is calcu…
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT) /ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90 in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demon…
In the quantum Hall regime of graphene, antiferromagnetic and spin-polarized ferromagnetic states at the zeroth Landau level compete, leading to a canted antiferromagnetic state depending on the direction and magnitude of an applied magnetic field. Here, we investigate this transition at 2.7 K in graphene Hall bars that are proximity coupled to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. From nonlocal transport measurements, we demonstrate an induced magnetic exchange field in graphene, which lowers the magnetic field required to modulate the magnetic state in graphene. These results …
Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D lattices with ferromagnetic order. Here, by means of model analysis, we present a general design principle for realizing AVH effect in antiferromagnetic monolayers, which involves the introduction of nonequilibrium potentials to break of PT symmetry. Using first-principles calculations, we further demonstrate this design principle by stacking antiferromagnetic monolayer MnPSe3 on ferroelectric monolayer Sc2CO2 and achieve…
We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse resistivities while rotating an applied magnetic field of up to 17T in three orthogonal planes. For out-of-plane magnetotransport measurements, we find indications for a multidomain antiferromagnetic configuration whenever the field is aligned along the film normal. For in-plane field rotations, we clearly observe a sinusoidal resistivity oscillation characteristic for…
We show that the spin-orbit coupling (SOC) in alpha-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Gamma. A minimal k-dot-p model is constructed to capture this splitting by group theory analysis, a tight-binding model and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The upper limit of the PHE percentage is shown to be fundamentally determined by the band shape, and is quantitatively estimated to be roughly 31% by first principles.
We report on Cr doping effect in Mn3Sn polycrystalline films with both uniform and modulation doping. It is found that Cr doping with low concentration does not cause notable changes to the structural and magnetic properties of Mn3Sn, but it significantly enhances the anomalous Hall conductivity, particularly for modulation-doped samples at low temperature. A Hall conductivity as high as 184.8 Ω-1 cm-1 is obtained for modulation-doped samples at 50 K, in a sharp contrast to vanishingly small values for undoped samples at the same temperature. We attribute the enhancement to the change of Fermi…
We search for dynamical magnetoelectric phenomena in three-dimensional correlated systems with spin-orbit coupling. We focus on the antiferromagnetic insulator phases where the dynamical axion field is realized by the fluctuation of the antiferromagnetic order parameter. It is shown that the dynamical chiral magnetic effect, an alternating current generation by magnetic fields, emerges due to the time dependences of the order parameter such as antiferromagnetic resonance. It is also shown that the anomalous Hall effect arises due to the spatial variations of the order parameter such as antifer…
Observation of Weyl and Dirac Fermions in condensed matter systems is one of the most important discoveries. Among the very few available tools to characterize Weyl semimetals through electrical transport, negative magnetoresistance is most commonly used. Considering shortcomings of this method, new tools to characterize chiral anomaly in Weyl semimetals are desirable. We employ planar Hall effect as an effective technique in half Heusler Weyl semimetal GdPtBi to study chiral anomaly. This compound exhibits a large value of 1.5 mohm cm planar Hall resistivity at 2 K and in 9 T. Our analysis re…
In the non-collinear antiferromagnet Mn$_3$Sn, we compare simultaneous measurements of the anomalous Hall effect (AHE) and the magneto-optical Kerr effect (MOKE) through two magnetic phase transitions: the high-temperature paramagnetic/antiferromagnetic phase transition at the Néel temperature ($T_N \approx$420~K), and a lower-temperature incommensurate magnetic ordering at $T_1 \approx$270~K. While both the AHE and MOKE are sensitive to the same underlying symmetries of the antiferromagnetic non-collinear spin order, we find that the transition temperatures measured by these two techniques un…
We theoretically study the interplay between bulk Weyl electrons and magnetic topological defects, including magnetic domains, domain walls, and $\mathbb{Z}_6$ vortex lines, in the antiferromagnetic Weyl semimetals \mnsn\ and Mn$_3$Ge with negative vector chirality. We argue that these materials possess a hierarchy of energies scales which allows a description of the spin structure and spin dynamics using a XY model with $\mathbb{Z}_6$ anisotropy. We propose a dynamical equation of motion for the XY order parameter, which implies the presence of $\mathbb{Z}_6$ vortex lines, the double-domain p…
We report the growth of noncollinear antiferromagnetic (AFM) Mn$_3$Ni$_{0.35}$Cu$_{0.65}$N films and the orientation-dependent anomalous Hall effect (AHE) of (001) and (111) films due to nonzero Berry curvature. We found that post-annealing at 500$^\circ$C can significantly improve the AHE signals, though using the appropriate post-annealing conditions is important. The AHE and magnetization loops show sharp flipping at the coercive field in (111) films, while (001) films are hard to saturate by a magnetic field. The anomalous Hall conductivity of (111) films is an order of magnitude larger th…
We report the synthesis and magneto-transport measurements on the single crystal of Dirac semimetal PdTe$_2$. The de Haas-van Alphen oscillations with multiple frequencies have been clearly observed, from which the small effective masses and nontrivial Berry phase are extracted, implying the possible existence of the Dirac fermions in PdTe$_2$. The planar Hall effect and anisotropic longitudinal resistivity originating from the chiral anomaly and nontrivial Berry phase are observed, providing strong evidence for the nontrivial properties in PdTe$_2$. With the increase of temperature up to 150 …
Recently, giant planar Hall effect originating from chiral anomaly has been predicted in nonmagnetic Dirac/Weyl semimetals. ZrTe5 is considered to be an intriguing Dirac semimetal at the boundary of weak topological insulators and strong topological insulators, though this claim still remains controversial. Here, we report the observation in ZrTe5 of the giant planar Hall resistivity that shows two different magnetic-field dependences as predicted by theory and a maximum at the Lifshitz transition temperature. We found that the giant planar Hall resistivity fades out with decreasing the thickn…
Multiferroics have found renewed interest in topological magnetism and for logic-in-memory applications. Among them, SrMnO$_{3}$, possessing strong magnetoelectric coupling is gaining attention for the design of coexisting magnetic and polar orders upon straining. Here we demonstrate antiferromagnetic exchange interactions in strained SMO thin films extracted from a new feature in the phase response of Spin Hall magnetoresistance, which has not been explored in earlier works, such as in magnetic insulators. We explain our findings with a model that incorporates magnetic anisotropy along [110] …
Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as the spin diffusion length then spin polarization will lead to non-equilibrium spin accumulation and emergent phase transition. In n-Si, spin diffusion length has been reported up to 6 μm. The spin accumulation in Si will modify the thermal transport behavior of Si, which can be detected with thermal characterization. In this study, we report observation of sp…
An important goal of spintronics is to covert a charge current into a spin current with a controlled spin polarization that can exert torques on an adjacent magnetic layer. Here we demonstrate such torques in a two ferromagnet system. A CoNi multilayer is used as a spin current source in a sample with structure CoNi/Au/CoFeB. Spin torque ferromagnetic resonance is used to measure the torque on the CoFeB layer. The response as a function of the applied field angle and current is consistent with the symmetry expected for a torques produced by the planar Hall effect originating in CoNi. We find t…
It has recently been demonstrated that various topological states, including Dirac, Weyl, nodal-line, and triple-point semimetal phases, can emerge in antiferromagnetic (AFM) half-Heusler compounds. However, how to determine the AFM structure and to distinguish different topological phases from transport behaviors remains unknown. We show that, due to the presence of combined time-reversal and fractional translation symmetry, the recently proposed second-order nonlinear Hall effect can be used to characterize different topological phases with various AFM configurations. Guided by the symmetry …
Cr$_{1/3}$NbS$_{2}$ is a transition metal dichalcogenide that has been of significant interest due to its ability to host a magnetic chiral soliton lattice. Conventional and planar Hall measurements provide valuable insight into the detection of exotic spin structures in chiral magnets. We show that the presence of a giant planar Hall effect can be attributed to a tilted soliton lattice in Cr$_{1/3}$NbS$_{2}$. Our detailed angular dependent study shows the planar Hall effect and anisotropic magnetoresistance are intrinsically linked in complex non-coplanar magnets. From the conventional Hall s…
An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a π/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of π/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Ha…
We theoretically investigated the magnetoresistance (MR) and planar Hall effect (PHE) in Weyl semimetals based on the semiclassical Boltzmann theory, focusing on the fine structure of the band dispersion. We identified that the negative longitudinal MR and sign change in the PHE occur because of the negative off-diagonal effective-mass with no topological effects or chiral anomaly physics. Our results highlight the crucial role of the off-diagonal effective-mass, which can cause anomalous galvanomagnetic effects. We propose that the PHE creates a dip in their temperature dependence, which enab…
Orbital enhanced intrinsic nonlinear planar Hall effect for probing topological phase transition in CuTlSe$_{2}$
School of Physics, Beihang University（北京航空航天大学物理学院）；Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Fudan University（复旦大学理论物理与信息科学交叉中心）；Peng Huanwu Collaborative Center for Research and Education, Beihang University（北京航空航天大学彭桓武研究院）；Research Laboratory for Quantum Materials, IAPME, University of Macau（澳门大学量子材料研究实验室（IAPME））
Cr0.68Se single crystals with two-dimensional (2D) character have been grown, and the detailed magnetization M(T), electrical transport properties (including longitudinal resistivity and Hall resistivity and thermal transport ones (including heat capacity Cp(T) and thermoelectric power (TEP) S(T)) have been measured. There are some interesting phenomena: (i) Cr0.68Se presents a non-collinear antiferromagnetic (AFM) semiconducting behavior with the Neel temperature TN = 42 K and the activated energy Eg=3.9 meV; (ii) It exhibits the anomalous Hall effect (AHE) below TN and large negative magneto…
