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arXiv 1703.08910cond-mat.mes-hallcond-mat.mtrl-sci
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反铁磁Weyl半金属Mn $_3$ Sn/Ge中的反常霍尔效应和拓扑缺陷

Anomalous Hall effect and topological defects in antiferromagnetic Weyl semimetals: Mn$_3$Sn/Ge

Jianpeng Liu, Leon Balents

摘要:

本文从理论上研究了反铁磁Weyl半金属\mnsn和具有负矢量手征的Mn $_3$ Ge中的体Weyl电子和磁拓扑缺陷(包括磁畴、畴壁和$\mathbb{Z}_6$涡旋线)之间的相互作用.我们认为,这些材料具有一个层次的能量尺度,允许使用XY模型与$\mathbb{Z}_6$各向异性的自旋结构和自旋动力学的描述。我们提出了一个动力运动方程的XY序参量,这意味着存在的$\mathbb{Z}_6$涡线,双域模式的存在下,磁场,并有能力控制域的电流。我们还介绍了一个最小的电子模型,它允许有效的计算的电子结构中的反铁磁配置,揭开费米弧域壁,和尖锐的准束缚态在$\mathbb{Z}_6$涡旋。此外,我们已经展示了这些材料如何可以允许基于电子的反铁磁微结构成像,并提出了一种可能的设备的基础上域相关的异常霍尔效应。

英文摘要:

We theoretically study the interplay between bulk Weyl electrons and magnetic topological defects, including magnetic domains, domain walls, and $\mathbb{Z}_6$ vortex lines, in the antiferromagnetic Weyl semimetals \mnsn\ and Mn$_3$Ge with negative vector chirality. We argue that these materials possess a hierarchy of energies scales which allows a description of the spin structure and spin dynamics using a XY model with $\mathbb{Z}_6$ anisotropy. We propose a dynamical equation of motion for the XY order parameter, which implies the presence of $\mathbb{Z}_6$ vortex lines, the double-domain pattern in the presence of magnetic fields, and the ability to control domains with current. We also introduce a minimal electronic model which allows efficient calculation of the electronic structure in the antiferromagnetic configuration, unveiling Fermi arcs at domain walls, and sharp quasi-bound states at $\mathbb{Z}_6$ vortices. Moreover, we have shown how these materials may allow electronic-based imaging of antiferromagnetic microstructure, and propose a possible device based on domain-dependent anomalous Hall effect.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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