Spontaneous topological Hall effect induced by non-coplanar antiferromagnetic order in intercalated van der Waals materials
H. Takagi, R. Takagi, S. Minami, T. Nomoto, K. Ohishi, M. -T. Suzuki, Y. Yanagi, M. Hirayama, N. D. Khanh, K. Karube, H. Saito, D. Hashizume, R. Kiyanagi, Y. To… 展开作者
H. Takagi, R. Takagi, S. Minami, T. Nomoto, K. Ohishi, M. -T. Suzuki, Y. Yanagi, M. Hirayama, N. D. Khanh, K. Karube, H. Saito, D. Hashizume, R. Kiyanagi, Y. Tokura, R. Arita, T. Nakajima, S. Seki
In ferromagnets, electric current generally induces transverse Hall voltage in proportion to magnetization (anomalous Hall effect), and it is frequently used for electrical readout of the up and down spin states. While these properties are usually not expected in antiferromagnets, recent theoretical studies predicted that non-coplanar antiferromagnetic order with finite scalar spin chirality (i.e. solid angle spanned by neighboring spins) can often induce large spontaneous Hall effect even without net magnetization or external magnetic field. This phenomenon, i.e. spontaneous topological Hall effect, can potentially be used for the efficient electrical readout of the antiferromagnetic states, but its experimental verification has long been elusive due to the lack of appropriate materials hosting such exotic magnetism. Here, we report the discovery of all-in-all-out type non-coplanar antiferromagnetic order in triangular lattice compounds CoTa3S6 and CoNb3S6, by performing the detailed magnetic structure analysis based on polarized neutron scattering experiments as well as systematic first-principles calculations. These compounds are reported to host unconventionally large spontaneous Hall effect despite their vanishingly small net magnetization, and our analysis revealed that it can be well explained in terms of topological Hall effect, which originates from the fictitious magnetic field associated with scalar spin chirality in non-coplanar antiferromagnetic orders. The present results indicate that the scalar spin chirality mechanism can offer a promising route to realize giant spontaneous Hall response even in compensated antiferromagnets, and highlight intercalated van der Waals magnets as an unique quasi-two-dimensional material platform to enable various nontrivial manner of electrical reading and possible writing of non-coplanar antiferromagnetic domains.
Emergent 3D Fermiology and Magnetism in an Intercalated Van der Waals System
University of L’Aquila(拉奎拉大学);CNR-SPIN L’Aquila(意大利国家研究委员会自旋物理研究所拉奎拉分部);Univ Rennes, CNRS, Institut des Sciences Chimiques de Rennes-UMR6226(雷恩大学,法国国家科学研究中心,雷恩化学科学研究所);Synchrotron SOLEIL(索莱尔同步辐射中心);CNR-Istituto di Struttura della Materia (CNR-ISM)(意大利国家研究委员会物质结构研究所);Swiss Light Source, Paul Scherrer Institute(瑞士光源,保罗谢勒研究所);Deutsches Elektronen-Synchrotron DESY(德国电子同步辐射中心);MAX IV Laboratory, Lund University(隆德大学马克四实验室)
Aggregation of BiTe Monolayer on Bi$_2$Te$_3$(111) Induced by Diffusion of Intercalated Atoms in van der Waals Gap
利用扫描隧道显微镜结合密度泛函理论计算,研究了Bi $_2$ Te $_3$(111)薄膜的生长后老化机制.结果发现,单层结构的晶格对称性的平方逐渐聚集从表面台阶。理论计算表明,范德华(vdW)间隙不仅作为一个自然水库的自嵌入Bi和Te原子,但也提供了他们容易的扩散途径。一旦跳出能隙,这些缺陷原子在正能量增益的驱动下优先在Bi $_2$ Te $_3$(111)表面上发展成二维BiTe超结构。考虑到vdW层之间的弱键合的共同性质,我们预计这种不寻常的扩散和聚集的插入原子可能是普遍的重要性,为大多数种类的vdW层状材料。
Topochemically-engineered coexistence of charge and spin orders in intercalated endotaxial heterostructures
University of California, Berkeley(加州大学伯克利分校);Molecular Foundry, Lawrence Berkeley National Laboratory(劳伦斯伯克利国家实验室分子发现中心);Jawaharlal Nehru Centre for Advanced Scientific Research(贾瓦哈拉尔·尼赫鲁高级科学研究中心);Max-Planck-Institute for Chemical Physics of Solids(马克斯·普朗克固体化学物理研究所)
Magnetic ground states of a model for (TM)Nb$_3$S$_6$, TM=Co, Fe, Ni
过渡金属插层的二硫属化物CoNb $_3$ S $_6$是一种三角形反铁磁体,最近被证明在低于Néel温度下表现出大的反常霍尔效应(AHE),即使对外场的响应非常小。这表明,有一个有趣的磁性结构,与电子结构相互作用,产生AHE,因为共线反铁磁体不能表现出非零的AHE。我们提出了一个磁性过渡金属插层二硫属化合物的模型,并研究了它的基态作为相互作用参数的函数。该模型表现出平面自旋螺旋,非平面自旋螺旋,和一个特定的非共面所谓的$3q$状态之间的过渡。后一种状态必须表现出非零的AHE,而自旋螺旋则没有。
Emergent Cooperative Superstructures via Order-Disorder Kinetics in Molecule-Intercalated NbSe2
The University of Tokyo(东京大学);Japan Synchrotron Radiation Research Institute (JASRI)(日本同步辐射研究所);RIKEN Center for Emergent Matter Science(理化学研究所 emergent matter science 中心);Nagoya University(名古屋大学)
Non-monotonic hydration dependence of ionic transport in atomically-thin MnO2 sheets
Institute of Materials Science and Nanotechnology, Bilkent University(比尔肯特大学材料科学与纳米技术研究所);Bilkent National Nanotechnology Research Center - UNAM(比尔肯特国家纳米技术研究中心);Department of Physics, Middle East Technical University(中东理工大学物理系)
Li intercalation in graphite: a van der Waals density-functional study
从第一原理建模层状层间化合物提出了一个问题,因为它们的许多性质是由范德华相互作用和化学或马德隆项之间的微妙平衡决定的,并且通常缺乏对范德华相互作用的良好描述。利用van der Waals密度泛函方法研究了锂-石墨原型层间化合物的结构、声子和能量学。Li在石墨中的嵌入导致稳定的系统,其具有计算的嵌入能为$-0.2$至$-0.3$ ~eV/Li原子(指块状石墨和Li金属)。完全负载的阶段1和阶段2化合物LiC $_6$和$_{1/2}$ C $_6$是稳定的,对应于插入两个石墨烯平面之间的Li原子的二维$\sqrt3\times\sqrt3$晶格。阶段$N>2$结构与具有相同浓度的稀释阶段2化合物相比是不稳定的。在升高的温度下,稀释阶段2化合物容易变得无序,但Li $_{3/16}$ C $_6$的结构相对稳定,对应于Li原子的$\sqrt7\times\sqrt7$面内堆积。第一性原理计算,以及有限温度效应的贝特-佩尔斯模型,允许观察到的电压分布的微观描述。
Discovery of Van Hove Singularities: Electronic Fingerprints of 3Q Magnetic Order in a van der Waals Quantum Magnet
University of California, Berkeley(加州大学伯克利分校);Lawrence Berkeley National Laboratory(劳伦斯伯克利国家实验室);Nanyang Technological University(南洋理工大学);CIFAR(加拿大联邦先进研究基金会);Kavli Energy NanoScience Institute(卡弗里能源纳米科学研究所)
Electron-doped magnetic Weyl semimetal LixCo3Sn2S2 by bulk-gating
RIKEN Center for Emergent Matter Science (CEMS)(RIKEN 新兴物质科学中心);Department of Mechanical Engineering and Sciences, Kyoto University(京都大学机械工学与科学系);Department of Physics, Tohoku University(东北大学物理学系);Research Center for Advanced Science and Technology, The University of Tokyo(东京大学先进科学技术研究中心);Quantum-phase Electronics Center and Department of Applied Physics, the University of Tokyo(东京大学量子相电子中心与应用物理系)
Ferromagnetism above 200 K in organic-ion intercalated CrSBr
CIC nanoGUNE(纳米技术联合研究中心);UPV/EHU(巴斯克地区理工大学);CSIC-UPV/EHU(西班牙国家科研委员会-巴斯克地区理工大学);Izmir Institute of Technology(伊兹密尔理工大学);IKERBASQUE(伊克尔巴斯基奎基金会);Universitat de València(瓦伦西亚大学)
Tuning magnetic, lattice, and transport properties in CoNb3S6 via Fe doping
Chung-Ang University(中央大学);Sungkyunkwan University(成均馆大学);Academia Sinica(中央研究院);Indian Institute of Technology Roorkee(印度理工学院鲁尔基分校);Seoul National University(首尔大学)