arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2009.08036cond-mat.mtrl-sci
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拓扑节线半金属候选物HoSbTe的磁性和电子性质

Magnetic and electronic properties of a topological nodal line semimetal candidate: HoSbTe

Meng Yang, Yuting Qian, Dayu Yan, Yong Li, Youting Song, Zhijun Wang, Changjiang Yi, Hai L. Feng, Hongming Weng, Youguo Shi

摘要:

本文报道了磁拓扑节线半金属候选物HoSbTe的实验和理论研究。从Sb助熔剂中生长出HoSbTe单晶,其晶体结构为四方层状结构(空间群:P4/nmm,no.129),其中Ho-Te双层被正方形网状Sb层隔开。的磁化强度和比热呈现出明显的异常,在4 K的反铁磁(AFM)相变。同时,在垂直和平行于晶体学c轴的磁场作用下,观察到明显的磁各向异性。电阻率在低于200 K时经历坏金属样状态,并在约8 K时显示出平台,随后由于AFM转变而下降。另外,通过能带结构的第一性原理计算,我们发现HoSbTe在考虑和不考虑自旋轨道耦合的情况下,都是拓扑节线半金属或弱拓扑绝缘体,为研究磁性和拓扑费米性质之间的相互作用提供了平台.

英文摘要:

We report the experimental and theoretical studies of a magnetic topological nodal line semimetal candidate HoSbTe. Single crystals of HoSbTe are grown from Sb flux, crystallizing in a tetragonal layered structure (space group: P4/nmm, no.129), in which the Ho-Te bilayer is separated by the square-net Sb layer. The magnetization and specific heat present distinct anomalies at 4 K related to an antiferromagnetic (AFM) phase transition. Meanwhile, with applying magnetic field perpendicular and parallel to the crystallographic c axis, an obvious magnetic anisotropy is observed. Electrical resistivity undergoes a bad-metal-like state below 200 K and reveals a plateau at about 8 K followed by a drop due to the AFM transition. In addition, with the first-principle calculations of band structure, we find that HoSbTe is a topological nodal line semimetal or a weak topological insulator with or without taking the spin-orbit coupling into account, providing a platform to investigate the interplay between magnetic and topological fermionic properties.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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