The successful theoretical prediction and experimental demonstration of hybrid improper ferroelectricity (HIF) provides a new pathway to couple octahedral rotations, ferroelectricity, and magnetism in complex materials. To enable technological applications, a HIF with a small coercive field is desirable. We successfully grow Sr3Sn2O7 single crystals, and discover that they exhibit the smallest electric coercive field at room temperature among all known HIFs. Furthermore, we demonstate that a small external stress can repeatedly erase and re-generate ferroelastic domains. In addition, using in-plane piezo-response force microscopy, we characterize abundant charged and neutral domain walls. The observed small electrical and mechanical coercive field values are in accordance with the results of our first-principles calculations on Sr3Sn2O7, which show low energy barriers for both 90° and 180° polarization switching compared to those in other experimentally demonstrated HIFs. Our findings represent an advance towards the possible technological implemetation of functional HIFs.
We performed first principles calculations for epitaxially strained orthorhombic CaTiO$_3$. The computational results reveal the existence of a metastable ferroelectric phase at compressive strain with unexpected in-plane polarization. Symmetry analysis indicates that two distortion modes at the X point combine to induce the polarization, leading to characterization as a hybrid improper ferroelectric. Our work demonstrates a mechanism for improper ferroelectricity in simple perovskites without the need for symmetry lowering by layering or cation ordering.
First-principles calculations are presented for the layered perovskite Ca$_3$Mn$_2$O$_7$. The results reveal a rich set of coupled structural, magnetic and polar domains in which oxygen octahedron rotations induce ferroelectricity, magnetoelectricity and weak-ferromagnetism. The key point is that the rotation distortion is a combination of two non-polar modes with different symmetries. We use the term "hybrid" improper ferroelectricity to describe this phenomenon and discuss how control over magnetism is achieved through these functional antiferrodistortive octahedron rotations.
Ferroelectricity in stuffed aluminate sodalites is demonstrated in the present study. The present results indicate that stuffed aluminate sodalites exhibit excellent performance as a pyroelectric energy harvester, suggesting that they exhibit great promise as a class of materials for highly efficient energy harvesting devices. (See manuscript for the full abstract)
Using first-principles calculations, we study theoretically the stable 2H hexagonal structure of BaMnO3. We show that from the stable high temperature P63/mmc structure, the compound should exhibit an improper ferroelectric structural phase transition to a P63cm ground state. Combined with its antiferromagnetic properties, 2H-BaMnO3 is therefore expected to be multiferroic at low temperature. The phase transition mechanism in BaMnO3 appears similar to what was reported in YMnO3 in spite of totally different atomic arrangement, cation sizes and Mn valence state.
In this contribution to the special issue on magnetoelectrics and their applications, we focus on some single phase multiferroics theoretically predicted and/or experimentally discovered by the authors in recent years. In these materials, iron is the common core element. However, these materials are conceptually different from the mostly-studied BiFeO$_3$, since their ferroelectricity is improper. Our reviewed materials are not simply repeating one magnetoelectric mechanism, but cover multiple branches of improper ferroelectricity, including the magnetism-driven ferroelectrics, geometric ferro…
We revise the possibility of having an amplified surface potential in ferroelectric field-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regime that allows for such an amplification is actually bounded by the appearance of multi-domain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario.
Magnetics, ferroelectrics and multiferroics have attracted great attentions because they are not only extremely important for investigating fundamental physics, but also have important applications in information technology. Here, recent computational studies on magnetism and ferroelectricity are reviewed. We first give a brief introduction to magnets, ferroelectrics, and multiferroics. Then, theoretical models and corresponding computational methods for investigating these materials are presented. In particular, a new method for computing the linear magnetoelectric coupling tensor without app…
Cubic structure is one of the most commonly found structures for oxides at high temperature. As the temperature is lowered only a handful of these oxides exhibit ferroelectricity which is rather surprising. In this paper, we use the example of YCrO3 (YCO), an incipient ferroelectric material to show that in most oxides there are two competing phenomenon -onset of ferroelectricity due to rotation of CrO6 octahedra and displacement of Y atom leading to suppression of ferroelectricity. This competition reveals that while the octahedral rotations favor a lower symmetry state, the Y atom displaceme…
Ferroelectricity is usually found in compound materials composed by different elements. Here, based on first-principles calculations, we reveal the first example of spontaneous electrical polarization and ferroelectricity in stable two-dimensional elemental materials: elemental Group-V (As, Sb, and Bi) monolayers. The polarization is due to the spontaneous lattice distortion with atomic layer buckling. Interestingly, for Bi monolayer, apart from the ferroelectric phase, we find that it can also host an antiferroelectric phase. The Curie temperatures of these elemental materials can be higher t…
The temperature-dependent polarization of SrTiO_3 thin films is investigated using confocal scanning optical microscopy. A homogeneous out-of-plane and inhomogeneous in-plane ferroelectric phase are identified from images of the linear electrooptic response. Both hysteretic and non-hysteretic behavior are observed under a dc bias field. Unlike classical transitions in bulk ferroelectrics, local ferroelectricity is observed at temperatures far above the dielectric permittivity maximum. The results demonstrate the utility of local probe experiments in understanding inhomogeneous ferroelectrics.
We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric GaFeO3. Piezo-force measurements show a 180o phase shift of piezoresponse upon switching the electric field indicating nanoscale ferroelectricity in epitaxial thin films of gallium ferrite. Further, temperature dependent impedance analysis with and without the presence of an external magnetic field clearly reveals a pronounced magneto-dielectric effect across the magnetic transition temperature. In addition, our first principles calculations show that Fe ions are not only responsible for ferrimagnet…
Cornell University（康奈尔大学）；University of Nebraska, Lincoln（内布拉斯加大学林肯分校）；Leibniz-Institut für Kristallzüchtung（莱布尼茨晶体生长研究所）；Pacific Northwest National Laboratory（太平洋西北国家实验室）；The Pennsylvania State University（宾夕法尼亚州立大学）；University of California, Berkeley（加州大学伯克利分校）；Rice University（莱斯大学）；Kavli Institute at Cornell for Nanoscale Science（康奈尔卡弗里纳米科学研究所）；Princeton University（普林斯顿大学）
Using density functional theory calculations, ultrathin films of SrVO3(d1) and SrCrO3(d2) on SrTiO3 substrates have been studied as possible multiferroics. Although both are metallic in the bulk limit, they are found to be insulating as a result of orbital ordering driven by lattice distortions at the ultrathin limit. While the distortions in SrVO3 have a first-order Jahn-Teller origin, those in SrCrO3 are ferroelectric in nature. This route to ferroelectricity (FE) results in polarizations comparable with conventional ferroelectrics.
In this paper we study the size effects of the ferroelectric nanotube phase diagrams and polar properties allowing for effective surface tension and depolarization field influence. The approximate analytical expression for the paraelectric-ferroelectric transition temperature dependence on the radii of nanotube, polarization gradient coefficient, extrapolation length, surface tension and electrostriction coefficient was derived. It was shown that the transition temperature could be higher than the one of the bulk material for negative electrostriction coefficient. Therefore we predict conserva…
Room temperature coexistence of ferromagnetism and ferroelectricity in a thin film of a novel material of nominal composition PbTi0.5Fe0.5O3-d is probed by standard ferroelectric and ferromagnetic hysteresis loop measurements and by scanning probe microscopy of various kinds. Both magnetic domains and ferroelectric domains are observed in the same spatial region of the material, implying phase coexistence in this system. For both order parameters, sample morphology strongly affects roughness of the domain walls.
We have carried out a first-principles theoretical study of the magnetically induced polarization in orthorhombic TbMnO3, a prototypical material in which a cycloidal spin structure generates an electric polarization via the spin-orbit interaction. We compute both the electronic and the lattice-mediated contributions to the polarization and find that the latter is strongly dominant. We analyze the spin-orbit induced forces and lattice displacements from both atomic and mode-decomposition viewpoints, and show that a simple model based on nearest Mn--Mn neighbor Dzyaloshinskii-Moriya interaction…
Integration of ferroelectric materials into novel technological applications requires low coercive field materials, and consequently, design strategies to reduce the ferroelectric switching barriers. In this first principles study, we show that biaxial strain, which has a strong effect on the ferroelectric ground states, can also be used to tune the switching barrier of hybrid improper ferroelectric Ruddlesden-Popper oxides. We identify the region of the strain -- tolerance factor phase diagram where this intrinsic barrier is suppressed, and show that it can be explained in relation to strain …
The central goal of crystal engineering is to develop precise control over material function \emph{via} rational design of structure. A particularly successful realisation of this paradigm is the example of hybrid improper ferroelectricity in layered perovskite materials, where cation vacancies and cooperative octahedral tilts combine to break inversion symmetry. However, in the more chemically diverse and technologically relevant family of inorganic ABX$_3$ perovskites, symmetry conspires to render hybrid coupling to polar distortions impossible. In this study, we use group-theoretical analys…
The discoveries of magnetism and ferroelectricity in 2D van der Waals (vdW) materials have brought important functionalities to the 2D materials family, and may trigger a revolution in next generation nanoelectronics and spintronics. In this perspective article, we briefly review the recent progress in the field of 2D ferroelectrics, focusing on the mechanisms that drive spontaneous polarizations in 2D systems, unique properties brought about by the reduced lattice dimensionality, and promising applications of 2D ferroelectrics. At the end, we provide an outlook for challenges that need to be …
The electronic structure of SrBi2Ta2O9 is investigated from first-principles, within the local density approximation, using the full-potential linearized augmented plane wave (LAPW) method. The results show that, besides the large Ta(5d)-O(2p) hybridization which is a common feature of the ferroelectric perovskites, there is an important hybridization between bismuth and oxygen states. The underlying static potential for the ferroelectric distortion and the primary source for ferroelectricity is investigated by a lattice-dynamics study using the Frozen Phonon approach.
Two-dimensional (2D) ferroelectricity has attracted extensive attention since its discovery in the monolayers of van der Waals materials. Here we show that 2D ferroelectricity induced by octahedral rotation distortion is widely present in the perovskite bilayer system through first-principles calculations. The perovskite tolerance factor plays a crucial role in the lattice dynamics and ground-state structure of the perovskite monolayers and bilayers, thus providing an important indicator for screening this hybrid improper ferroelectricity. Generally, the ferroelectric switching via an orthorho…
Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to produce large and continuously variable strain states, thus limiting the potential for designing and tuning the desired properties of ferroelectric films. Here, we observe and explore dynamic strain-induced ferroelectricity in SrTiO$_3$ by laminating freestanding oxide films onto a stretchable polymer substrate. Using a combination of scanning probe microscopy,…
The ground-state structure of monolayers and nanoplatelets of SnS with a thickness from two to five monolayers is calculated from first principles. It is shown that nanoobjects with only odd number of monolayers are ferroelectric. The ferroelectric, piezoelectric, and elastic properties of these polar structures are calculated. The appearance of polarization in these nanoobjects is explained by an uncompensated polarization that exists in an antiferroelectric structure of bulk SnS. The mechanism of ferroelectricity, in which the ferroelectric distortion is associated with short-range ordering …
The question whether ferroelectricity (FE) may coexist with a metallic or highly conducting state, or rather it must be suppressed by the screening from the free charges, is the focus of a rapidly increasing number of theoretical studies and is finally receiving positive experimental responses. The issue is closely related to the thermoelectric and multiferroic (also magnetic) applications of FE materials, where the electrical conductivity is required or spurious. In these circumstances, the traditional methods for probing ferroelectricity are hampered or made totally ineffective by the free c…
We study the ferroelectric stability and surface structural properties of an oxygen-terminated hexagonal YMnO$_3$ ultra-thin film using density functional theory. Under an open circuit boundary condition, the ferroelectric state with the spontaneous polarization normal to the (0001) surface, is found to be metastable in a single domain state despite the presence of a depolarizing field. We establish a connection between the result and the role of improper ferroelectric transition. Our results imply that improper ferroelectric ultrathin films can have rather unique properties that are distincti…
In hybrid improper ferroelectric systems, polarization arises from the onset of successive nonpolar lattice modes. In this work, measurements and modeling were performed to determine the spatial symmetries of the phases involved in the transitions to these modes. Structural and optical measurements reveal that the tilt and rotation distortions of the MnO6 or TiO6 polyhedra relative to the high symmetry phases driving ferroelectricity in the hybrid improper Ca3X2O7 system (X=Mn and Ti) condense at different temperatures. The tilt angle vanishes abruptly at T$_T$ ~ 400 K for Ca3Mn2O7 (and contin…
Ferroelectric hafnia is being explored for next generation electronics due to its robust ferroelectricity in nanoscale samples and its compatibility with silicon. However, its ferroelectricity is not understood. Other ferroelectrics usually lose their ferroelectricity for nanoscopic samples and thin films, and the hafnia ground state is non-polar baddeleyite. Here we study hafnia with density functional theory (DFT) under epitaxial strain, and find that strain not only stabilizes the ferroelectric phases, but also leads to unstable modes and a downhill path in energy from the high temperature …
Density functional calculations are performed to study the effect of epitaxial strain on PbZrO3. We find a remarkably small energy difference between the epitaxially strained polar R3c and nonpolar Pbam structures over the full range of experimentally accessible epitaxial strains -3% < η< 4%. While ferroelectricity is favored for all compressive strains, for tensile strains the small energy difference between the nonpolar ground state and the alternative polar phase yields a robust antiferroelectric ground state. The coexistence of ferroelectricity and antiferroelectricity observed in thin fil…
Recent experiments have demonstrated that light can induce a transition from the quantum paraelectric to the ferroelectric phase of SrTiO$_3$. Here, we investigate this terahertz field-induced ferroelectric phase transition by solving the time-dependent lattice Schrödinger equation based on first-principles calculations. We find that ferroelectricity originates from a light-induced mixing between ground and first excited lattice states in the quantum paraelectric phase. In agreement with the experimental findings, our study shows that the non-oscillatory second harmonic generation signal can b…
Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in elemental materials, causing a lack of spontaneous electric polarization. Here, we report an unexpected room-temperature ferroelectricity in few-chain Te nanowires. Out-of-plane ferroelectric loops and domain reversal are observed by piezoresponse force microscopy. Through density functional theory, we attribute the ferroelectricity to the ion-displacement cr…
GeTe has been proposed as the father compound of a new class of functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric Rashba semiconductors. In nice agreement with first principle calculations, we show by angular resolved photoemission and piezo-force microscopy that GeTe displays surface and bulk Rashba bands arising from the intrinsic inversion symmetry breaking provided by the remanent ferroelectric polarization. This work points to the possibility to control the spin chirality of bands in GeTe by acting on its ferroelectric polarization.
We report studies of ferroelectricity in ultra-thin perovskite films with realistic electrodes. The results reveal stable ferroelectric states in thin films less than 10 Åthick with polarization normal to the surface. Under short-circuit boundary conditions, the screening effect of realistic electrodes and the influence of real metal/oxide interfaces on thin film polarization are investigated. Our studies indicate that metallic screening from the electrodes is affected by the difference in work functions at oxide surfaces. We demonstrate this effect in ferroelectric PbTiO$_3$ and BaTiO$_3$ fil…
The consideration of size-induced ferroelectric-paraelectric phase transition for conventional and incipient ferroelectrics thin films with perovskite structure was carried out in phenomenological theory framework of Ginsburg-Landau-Devonshire. The more general form of surface free energy expansion that includes intrinsic surface stress tensor, surface piezoelectric effect and electrostriction as well as quadratic and quartic powers of surface polarization has been considered. The analytical expressions for thickness dependence of transition temperature was derived both for the conventional an…
2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric resistive switching for out-of-plane 2D ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, a micrometer-size monolayer SnS is grown on mica by physical vapor deposition, and in-plane ferroelectric switching is demonstrated with a two-terminal device at room temperature (RT)…
Conventional perovskite-type ferroelectrics are based on octahedral units of oxygen, and often comprise toxic Pb to achieve robust ferroelectricity. Here, we report the ferroelectricity in a silicate-based compound, Bi2SiO5 (BSO), induced by a structural instability of the corresponding silicate tetrahedral chains. A low-energy phonon mode condenses at ~ 673 K to induce the proper ferroelectric phase transition. Polarization switching was observed in a BSO single crystal with a coercive field of 30 kV/cm and a spontaneous polarization of 0.3 microC/cm2 along a direction normal to the cleavage …
Using first principles calculations we show that several alkali lead halides potentially present collective ferroelectric polarization. This should occur at least at the nanoscale; it could be detected macroscopically provided it is not concealed by lattice vibrations in the temperature range of stability of the cubic perovskite phase. For potassium lead halides and for alkali lead fluorides, remarkably, the ferroelectric behavior turns hyper-ferroelectric, suggesting a more robust ferroelectric polarization in spite of depolarization potentials induced by charge accumulation on surfaces or in…
Standing on successful first principles predictions for new functional ferroelectric materials, a number of new ferroelectrics have been experimentally discovered. Utilizing trilinear coupling of two types of octahedron rotations, hybrid improper ferroelectricity has been theoretically predicted in ordered perovskites and the Ruddlesden-Popper compounds (Ca$_{3}$Ti$_{2}$O$_{7}$, Ca$_{3}$Mn$_{2}$O$_{7}$, and (Ca/Sr/Ba)$_{3}$(Sn/Zr/Ge)$_{2}$O$_{7}$). However, the ferroelectricity of these compounds has never been experimentally confirmed and even their polar nature has been under debate. Here we…
We show the first-principles evidence of a hitherto unreported type of ferroelectricity with ultra-long ion-displacement in sodium and potassium hydroxides. Even a small amount of proton vacancies can completely change the mode of proton-transfer from intra-unitcell to trans-unitcell, giving rise to multiferroic soliton with mobile magnetism and a tremendous polarization that can be orders of magnitude higher compared with most perovskite ferroelectrics. Their vertical polarizations of thin-film are robust against depolarizing field, rendering various designs of 2D ferroelectric field-transist…
DyFeO3 exhibits a weak ferromagnetism (TNFe ~ 645 K) that disappears below a spin-reorientation (Morin) transition at TSRFe ~ 50 K. It is also known that applied magnetic field induces ferroelectricity at the magnetic ordering temperature of Dy-ions (TNDy ~ 4.5 K). Here, we show that the ferroelectricity exists in the weak ferromagnetic state (TSRFe < T < TN,C) without applying magnetic field, indicating the crucial role of weak ferromagnetism in inducing ferroelectricity. 57Fe Mössbauer studies show that hyperfine field (Bhf) deviates from mean field-like behaviour that is observed in the wea…
Using a joint approach of density functional theory and model calculations, we demonstrate that a prototypical charge ordered half-doped manganite, La$_{1/2}$Ca$_{1/2}$MnO$_3$ is multiferroic. The combination of a peculiar charge-orbital ordering and a tendency to form spin dimers breaks inversion symmetry, leads to a ferroelectric ground-state with a polarization up to several $μC/cm^2$. The presence of improper ferroelectricity does not depend on hotly debated structural details of this material: in the Zener-polaron structure we find a similar dramatic ferroelectric response with a large po…
Recent experimental results demonstrate that in thin films ferroelectricity persists down to film thickness of a few unit cells. This finding opens an avenue for novel electronic devices based on ultathin ferroelectrics, but also raises questions about factors controlling ferroelectricity and the nature of the ferroelectric state at the nanoscale. Here we report a first-principles study of KNbO3 ferroelectric thin films placed between two metal electrodes, either SrRuO3 or Pt. We show that the bonding at the ferroelectric-metal interface imposes severe constraints on the displacement of atoms,…
There are two silver perovskite oxides: AgNbO3 and AgTaO3. AgNbO3 has a noncentrosymmetric group of Pmc21 at room temperature with a ferri-electric ordering of polarization. Such a ferri-electric state with small polarization can be changed into a ferroelectric state with very large polarization by a high electric field or by a chemical modification. The induced ferroelectric phase shows promising electromechanical response for applications in piezoelectric devices. In contrast, AgTaO3 is a quantum paraelectric, but ferroelectricity also can be induced through chemical substitution. The findin…
SrTiO$_{3}$ is known to be an incipient ferroelectric. It is thought that ferroelectric stability in SrTiO$_{3}$ is suppressed by a delicate competition with quantum fluctuation and antiferrodistortion. The ferroelectric phase can, however, be stabilized by doping, isotope manipulation and strain engineering etc. Till date ferroelectricity in SrTiO$_{3}$ thin films was observed to exist up to room temperature -- that was when the films were grown on specially engineered substrates using complex growth techniques. It was possible to write and erase ferroelectric domains on the specially enginee…
The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to design the novel system is unclear and the feasible approach to achieve the coexistence of two parameter orders is absent. Here, we propose a general paradigm to design 2D ferroelectric topological insulators by sliding topological multilayers on the basis of first-principles calculations. Taking trilayer Bi2Te3 as a model system, we show that in the van der Waal…
We report ferroelectricity with fairly large spontaneous polarization (P ~ 0.2 - 0.8 \muC/cm2) below the Néel temperature of chromium (TNCr) in weakly ferromagnetic rare-earth orthochromites, RCrO3 (R=rare-earth) only when the rare-earth ion is magnetic. Intriguingly, the ferroelectricity in ErCrO3 (TC = 133 K) disappears at a spin-reorientation (Morin) transition (TSR ~ 22 K) below which the weak ferromagnetism associated with the Cr-sublattice also disappears, demonstrating the crucial role of weak ferromagnetism in inducing ferroelectricity. Further, the ferroelectric polarization (P) could…
It is generally accepted that oxygen vacancies play a central role in the emergence of ferroelectricity for HfO2-based materials, but the underlying mechanism still remains elusive. Herein, starting from the basic characterization circuit, we propose that the observed ferroelectricity is extrinsic. A key finding is that charged oxygen vacancies oscillate within the sample under repeated electric pulses, yielding a nonlinear current which behaves similarly to the polarization current for a normal ferroelectric. This unwanted current signal results in a ferroelectric-like hysteresis loop with bo…
Two-dimensional electron gas due to semiconductor interfaces can have high mobility and exhibits superconductivity, magnetism, and other exotic properties that are unexpected in constituent bulk materials. We study crystal structures, electronic states, and magnetism of short-period (BTO)$_m$/(GTO)$_2$ ($m$=2 and 4) superlattices consisting of ferroelectric BaTiO$_3$ (BTO) and ferrimagnetic insulating polar GdTiO$_3$ (GTO) by first principles calculations. Our investigation shows that the middle Ti-O monolayer in the GTO layer becomes metallic because the ferroelectricity in the insulating BTO…
2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) and their potential application in lateral field tunnel junction devices. We find that these monolayers have in-plane ferroelectricity, with their ferroelectric parameters being on par with other known 2D ferroelectric materials. Amongst SnSe, SnS, GeSe, and GeS, we find that GeS has the best ferroelectric parameters for device applications, which can be improved further by applying uniaxial tensile …
Li2SrNb2O7 (LSNO) crystallizes in a structure closely related to n = 2 Ruddlesden-Popper-type compounds, which is gen-erally formed by intergrowth of 2-dimensional perovskite-type blocks and rocksalt-type layers. The present study demonstrates a coexistence of spontaneous polarization and anti-ferroelectric-like nonlinear response in LSNO at 80 K, suggesting a weak ferroelectricity below the phase transition temperature of 217 K. A combination of first-principles cal-culations and single crystal x-ray diffractions clarifies a polar P21cn structure for the ground state of LSNO, where an in-plan…
