Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to obtain. In this study, we resolved these problems by directly transferring the easy-to-exfoliate CVD-grown graphene on SiC substrate to graphene in a high vacuum without using any transfer assisting medium and observed electronic band modulations due to the strong interlayer coupling.
Boron-Doping Effects on Local Structures of Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Thin Films Fabricated via Coaxial Arc Plasma: an X-ray Absorption Spectroscopic Study
Electronic Structure, mass fluctuation, and Localized Bond Properties of two-dimensional double-layer transition metal chalcogenide MX$_2$ (M = Mo, W; X = S, Se, Te) Calculated Based on Density Functional Theory and BBC model
Isolating the natural edges of bilayer graphene in gate-defined mesoscopic devices
University of Basel（巴塞尔大学）；Advanced Materials Laboratory, National Institute for Materials Science（国家材料科学研究所先进材料实验室）；Solid State Physics Laboratory, ETH Zürich（苏黎世联邦理工学院固体物理实验室）；Swiss Nanoscience Institute（瑞士纳米科学研究所）
Direct Wafer Bonding of Crystal-Ion-Sliced GaP Thin Films for Photonic Applications
Fraunhofer-Institute for Applied Optics and Precision Engineering IOF（弗劳恩霍夫应用光学和精密工程研究所）；Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf（德累斯顿罗森多夫亥姆霍兹中心离子束物理与材料研究所）；Leibniz Institute of Photonic Technology（莱布尼茨光子技术研究所）；Institute of Solid-State Physics, Friedrich Schiller University（弗里德里希·席勒大学固体物理研究所）；Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University（弗里德里希·席勒大学阿贝光子学中心应用物理研究所）
Epitaxial Growth and Electronic Properties of QuasiFreeStanding Rhombohedral WSe2 Bilayers on Cubic W110
Université Paris-Saclay（巴黎萨克雷大学）；CNRS, Centre de Nanosciences et de Nanotechnologies（法国国家科学研究中心，纳米科学与技术中心）；Thales Research & Technology (TRT)（泰雷兹研究与技术）；Université de Toulouse, INSA-CNRS-UPS, LPCNO（图卢兹大学，INSA-CNRS-UPS，LPCNO）；Synchrotron SOLEIL（索莱尔同步辐射中心）
Quasicrystalline oxide interfaces by twisting SrTiO3 membranes
University of Minnesota（明尼苏达大学）；California Institute of Technology（加州理工学院）；Massachusetts Institute of Technology（麻省理工学院）；Hankuk University of Foreign Studies（韩国外国语大学）；Technical University of Denmark（丹麦技术大学）；University of Antwerpen（安特卫普大学）；Temple University（天普大学）；University of Illinois, Urbana-Champaign（伊利诺伊大学厄巴纳-香槟分校）；Helmholtz-Zentrum Berlin für Materialien und Energie GmbH（柏林亥姆霍兹材料与能源中心）；Kyung Hee University（庆熙大学）
基于$β$ $_2$ O $_3$的超宽带隙半导体提供了实现比当今宽带隙功率半导体更高的功率开关性能、效率和更低的制造成本的潜力。然而，Ga $_2$ O $_3$电子产品商业化的最关键挑战是过热，这会影响器件的性能和可靠性。采用熔融键合法制备了Ga $_2$ O $_3$ /4 H-SiC复合材料。开发了基于低温（LT）金属有机气相外延的低温（$\le$ 600 $^{\circ}$ C）外延和器件处理方法，以在复合晶片上生长Ga $_2$ O $_3$外延沟道层，并随后制造成Ga $_2$ O $_3$功率MOSFET。这种LT方法对于保持复合晶片的结构完整性至关重要。这些LT生长外延Ga $_2$ O $_3$ MOSFET具有高热性能（沟道温度降低56%）、高达2.45 kV的高压阻断能力以及$\sim$ 300 MW/cm $^2$的功率品质因数，这是迄今为止报道的任何异质集成Ga $_2$ O $_3$器件的最高纪录。这项工作是第一次实现多千伏同质外延Ga $_2$ O $_3$功率MOSFET的复合衬底上制造的高传热性能，提供最先进的功率密度值，同时运行比那些在原生衬底上更冷。热表征和建模结果表明，具有减小的Ga $_2$ O $_3$厚度（$\sim$ 1 $μ$ m）和更薄的键合中间层（$<$ 10 nm）的Ga $_2$ O $_3$ /金刚石复合晶片可以将器件…
