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arXiv 0707.4575cond-mat.mtrl-sci
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两个石墨烯层之间的强共价键

Strong covalent bonding between two graphene layers

P. L. de Andres, R. Ramirez, J. A. Verges

摘要:

我们表明,两个石墨烯层直接堆叠在彼此的顶部(AA堆叠)形成强化学键时,平面之间的距离为0.156 nm。同时,C-C面内键从部分双键(0.141 nm)显著减弱为单键(0.154 nm)。石墨烯双层的这种多晶型形式是亚稳定的。在较大的间隔(0.335 nm)处通过范德华力结合的一个,活化能为0.16 eV/电池。类似于在六癸烷中发现的结构,C以混合90^{0}和120^{0}角的几何形状形成四个单键。层之间的中间分离可以在外部各向异性应力下稳定,显示出丰富的电子结构从范德华距离的半金属,到压缩时的金属,再到亚稳定最小值的宽带隙半导体。

英文摘要:

We show that two graphene layers stacked directly on top of each other (AA stacking) form strong chemical bonds when the distance between planes is 0.156 nm. Simultaneously, C-C in-plane bonds are considerably weakened from partial double-bond (0.141 nm) to single bond (0.154 nm). This polymorphic form of graphene bilayer is meta-stable w.r.t. the one bound by van der Waals forces at a larger separation (0.335 nm) with an activation energy of 0.16 eV/cell. Similarly to the structure found in hexaprismane, C forms four single bonds in a geometry mixing 90^{0} and 120^{0} angles. Intermediate separations between layers can be stabilized under external anisotropic stresses showing a rich electronic structure changing from semimetal at van der Waals distance, to metal when compressed, to wide gap semiconductor at the meta-stable minimum.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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