AI 中文总结
本研究采用晶体离子切割与直接晶圆键合技术制备高质量GaP薄膜，实现其灵活集成，为兼容异质集成与后端CMOS工艺的GaP薄膜光子学提供了可扩展途径。
AI 中文摘要
磷化镓（GaP）因具有高折射率、宽光学透明性及强二阶非线性响应，是集成光子学领域极具潜力的材料平台。本研究采用晶体离子切割与直接晶圆键合技术制备了绝缘衬底上的GaP薄膜，以熔融石英及SiO₂/Si/Si热氧化硅衬底作为代表性平台。与依赖异质外延生长或牺牲层释放的GaP薄膜平台不同，该方法可实现结晶GaP薄膜的灵活集成，且不受供体衬底与目标衬底的限制。转移后经退火处理，所得薄膜展现出接近块体的结晶质量、低残余应变、适用于纳米光子学制备的光滑表面及均匀键合界面；退火还可恢复其线性光学色散（n和k值），接近外延生长GaP的特性，估算在电信C波段1550 nm处的平面波吸收损耗为0.9 dB/cm。该方法为高质量GaP薄膜光子学建立了可扩展的技术路径，兼容多种异质集成及后端CMOS工艺。
英文摘要
Gallium phosphide (GaP) is a promising material platform for integrated photonics because of its high refractive index, broad optical transparency, and strong second-order nonlinear response. Here, we demonstrate GaP-on-insulator thin films fabricated by crystal ion slicing and direct wafer bonding, using fused silica and SiO$_2$/Si/Si thermally oxidized silicon substrates as representative platforms. Unlike GaP thin-film platforms that rely on heteroepitaxial growth or sacrificial-layer release, the presented approach enables the flexible integration of crystalline GaP thin films, independent of both donor and target substrates. Following post-transfer annealing, the films exhibit near-bulk crystalline quality with low residual strain, smooth surfaces suitable for nanophotonic fabrication, and homogeneous bonding interfaces. Furthermore, annealing restores the linear optical dispersion (n and k) approaching that of epitaxially grown GaP with estimated plane wave absorption loss of 0.9 dB/cm at 1550 nm in the telecom C-band. The demonstrated approach establishes a scalable pathway toward high-quality GaP thin-film photonics compatible with versatile heterogeneous integration and back-end-of-line CMOS processing.
