The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the thickness whereas the TCR of Cu increases strongly with decreasing thickness. Thin W films show negative TCR values, which can be linked to high disorder. The results are qualitatively consistent with a temperature-dependent semiclassical thin film resistivity model that takes into account phonon, surface, and grain boundary scattering.
We present a model for the leakage current in ferroelectric thin- film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential resistivity at low voltages, and the observation of a Positive Temperature Coefficient of Resistivity (PTCR) effect in certain samples in the high-voltage regime. The leakage current is modelled by considering a diffusion-limited current process, which in the high-voltage regime recovers the diffusion-limited Schottky relationship of Simmons already shown to be …
We report the controllable growth and the intriguing transport behavior of high-spin-polarization epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with pronounced T1/2 dependence, close relevance to structural disorder, and robust independence of magnetic fields. The resistivity upturn turns out to be qualitatively contradictory to weak localization, particle-particle channel electron-electron interaction (EEI), and orbital two-channel Kondo effect, leaving a three-dimensional particle-hole channel EEI the most likely physical source. Our result highlights a …
We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses below about 5\,nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free path, the data for Ru, Ir, and Cu were modeled within the semiclassical Mayadas--Shatzkes model [Phys. Rev. B 1, 1382 (1970)] to assess the combined contributions of surface and grain boundary scatte…
Surface resistivity of hydrogenated amorphous carbon films was measured as a function of the applied electrical field. The measured dependence shows a sharp ambipolar peak near zero gate voltage. Furthermore, we found that in some samples sheet resistance at the peak is as low as 7.5 kΩ/sq. This value is the same order of magnitude as the sheet resistance of a defect free graphene monolayer. Therefore a conclusion is made that an intrinsic graphene with dimensions of at least millimeters exist on the surface of amorphous carbon films. These results can open new perspectives not only for graphe…
We discuss the origin of the temperature dependence of resistivity observed in highly oriented LaNiO_3 thin films (of thickness d) grown on SrTiO_3 substrate by a pulsed laser deposition technique. All the experimental data are found to collapse into a single universal curve [T/T_{sf}(d)]^{3/2} for the entire temperature interval (20K<T<300K) with T_{sf}(d) being the onset temperature for triggering a resonant scattering of conduction electrons by spin fluctuations in LaNiO_3/SrTiO_3 heterostructure.
The magnetic phase transition is experimentally known to give rise to an anomalous temperature-dependence of the electron resistivity in ferromagnetic crystals. Phenomenological theories based on the interaction between itinerant electron spins and lattice spins have been suggested to explain these observations. In this paper, we show by extensive Monte Carlo (MC) simulation the behavior of the resistivity of the spin current calculated as a function of temperature ($T$) from low-$T$ ordered phase to high-$T$ paramagnetic phase in a ferromagnetic film. We analyze in particular effects of film …
The origin of the resistivity minimum observed in strongly phase separated manganites has been investigated in single crystalline thin films of LPCMO (x~0.42, y~0.40). The antiferromagnetic/charge ordered insulator (AFM/COI)-ferromagnetic metal (FMM) phase transition, coupled with the colossal hysteresis between the field cool cooled and field cooled warming magnetization demonstrates strongly phase separated nature, which gives rise to non-equilibrium magnetic liquid state that freezes into a magnetic glass. The thermal cycling and magnetic field dependence of the resistivity unambiguously sh…
V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in realizing a low resistivity contacts is the absence of fundamental knowledge of the physical and chemical properties of interfaces between metal and V-telluride materials. Here we present a combination of experimental and theoretical efforts to understand, design and harness low resistivity contacts to V-tellurides. Ab initio calculations are used to explor…
We fabricated NiFe2O thin films on MgAl2O4 (001) substrates by reactive dc magnetron co-sputtering in a pure oxygen atmosphere at different substrate temperatures. The film properties were investigated by various techniques with a focus on their structure, surface topography, magnetic characteristics, and transport properties. Structural analysis revealed a good crystallization with epitaxial growth and low roughness and a similar quality as in films grown by pulsed laser deposition. Electrical conductivity measurements showed high room temperature resistivity (12 Ohmm), but low activation ene…
We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co2FeAl (CFA) epitaxial films on MgO(001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. An analysis of the electrical transport properties reveals that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only.…
This paper addresses the effect of disorder on the carrier transport mechanism of atomic layer deposited ZnO thin films as has been investigated by temperature dependent electrical resistivity measurements in the temperature range of 4.2K to 300K. Films were grown on (0001) sapphire substrate at different substrate temperatures varying from 150 to 350 C. The defects and structural disorder in the films were found to be strongly dependent on their growth temperature. The films grown at 150, 300 and 350 C were found to be semiconductor-like in the whole measurement temperature range of resistivi…
Structural and electronic properties of amorphous and single-phase polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable gamma phase nucleates homogeneously in the film bulk and has a high resistivity, while the metastable kappa phase nucleates at the film surface and has a moderate resistivity. The microstructures of hot-deposited and post-annealed cold-deposited gamma films are quite different but the electronic properties are similar. The increase in the resistivity of amorphous In2Se3 films upon annealing is interpreted in terms of the replacement of In-In bonds w…
Fabrication and characterization of single-crystalline CoSn (10-10) kagome metal thin films for interconnect applications: structure and anisotropic electrical resistivity
Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % have been grown by sequential pulsed laser deposition on sapphire substrates. The resistivity of the films first decreased from ~ 6.6x10-3 to 4.7x10-4 ohm-cm as the Si concentration was increased from ~ 0.4 to 2% and then it increased with further increase in Si concentration. The electron concentrations in the films were in the range from 3x1019 to 4x1020 cm-3 showing their degenerate nature. However, temperature dependent resistivity measurements in the range from 300 to 4.2 K revealed negative temperature coefficient of…
In view of their immensely intriguing properties, two dimensional materials are being intensely researched in search of novel phenomena and diverse application interests, however, studies on the realization of nanocomposites in the application-worthy thin-film platform are rare. Here we have grown MoS2-hBN composite thin films on different substrates by the pulsed laser deposition technique and made comparative studies with the pristine MoS2 and hBN films. The Raman, XPS and HRTEM confirm the concomitant presence of both the 1T (conducting) and 2H (semiconducting) polymorphs of MoS2 in the com…
Resistive solid state sensors are widely used in multiple applications, including molecular and gas detection. Absorption or intercalation of the target species varies the lattice parameters and an effective thickness of thin films, which is usually neglected in analyzing their transport properties in general and the sensor response in particular. Here, we explore the case of palladium-based thin films absorbing hydrogen and demonstrate that expansion of thickness is an important mechanism determining the magnitude and the very polarity of the resistance response to hydrogenation in high resis…
The electrical resistivity of La$_{1-x}$Ca$_{x}$MnO$_{3}$ thin films grown on (001) NdGaO$_{3}$ and (100) SrTiO$_{3}$ substrates by off-axis sputtering has been studied as a function of the Calcium doping level. The samples have very narrow rocking curves and excellent in plane registry with the substrate. A strong correlation between the peak resistance temperature and the polaronic hopping energy is seen which is not simply linear. The low temperature resistivity is seen to be fit better by a model of single magnon scattering, and a near linear correlation between the resistivity due to magn…
In this paper, we analyze the upper critical field of four MgB2 thin films, with different resistivity (between 5 to 50 mWcm) and critical temperature (between 29.5 to 38.8 K), measured up to 28 Tesla. In the perpendicular direction the critical fields vary from 13 to 24 T and we can estimate 42-57 T range in other direction. We observe linear temperature dependence even at low temperatures without saturation, in contrast to BCS theory. Considering the multiband nature of the superconductivity in MgB2, we conclude that two different scattering mechanisms influence separately resistivity and cr…
In the present investigation resistivity Vs temperature measurements have been performed for solgel prepared pure and Ni doped CdO (NDO) thin films. The semiconducting behavior i.e. negative temperature coefficient of resistivity (TCR) of pure CdO thin film through-out the whole temperature range can be attributed mainly due to concentration dependent thermally activation mechanism of the carriers. The semiconductor to metal transition (SMT) for NDO thin films has been elucidated via combined effect of involved grain boundaries, ionic impurities, phonon scattering and carrier activation.
We investigate the temperature dependence of the resistivity and magnetoresistance of a polycrystalline $Sr_2CoMoO_{6-δ}$ film deposited on (100)-$SrTiO_3$ substrate prepared by the pulsed laser deposition method. X-ray diffraction, Raman and magnetoresistance results demonstrate clearly the coexistence of a ferromagnetic metallic and an antiferromagnetic (or paramagnetic) insulating domain. Percolative transition between these two phases as the temperature varies, which is believed to induce a metal-insulator transition at around $T_C$, has been directly observed in our measurements of the te…
SrVO3 and SrNbO3 are perovskite-type transition-metal oxides with the same d1 electronic configuration. Although SrNbO3 (4d1) has a larger d orbital than SrVO3 (3d1), the reported electrical resistivity of SrNbO3 is much higher than that of SrVO3, probably owing to nonstoichiometry. In this paper, we grew epitaxial, high-conductivity stoichiometric SrNbO3 using pulsed laser deposition. The growth temperature strongly affected the Sr/Nb ratio and the oxygen content of the films, and we obtained stoichiometric SrNbO3 at a very narrow temperature window around 630 $°$C. The stoichiometric SrNbO3 …
The composition dependence of the structural, magnetic, and transport properties of epitaxially grown Mn-Co-Ga films were investigated. The crystal structure was observed to change from tetragonal to cubic as the Co content was increased. In terms of the dependence of saturation magnetization on the Co content, relatively small value was obtained for the Mn$_{2.3}$Co$_{0.4}$Ga$_{1.3}$ film at a large {\it K}$_\textrm u$ value of 9.2 Merg/cm$^3$. Electrical resistivity of Mn-Co-Ga films was larger than that of pure Mn-Ga film. The maximum value of the resistivity was 490 $μΩ$cm for Mn$_{2.2}$Co…
Palladium satisfies most of the requirements for an effective hydrogen storage material with two major drawbacks: it has a relatively low gravimetric hydrogen density and is prohibitively expensive for large-scale applications. Pd-based alloys should be considered as possible alternatives to a pure Pd. The question is how much one can dilute the Pd concentration in a variety of candidate materials while preserving hydrogen absorption capability. We demonstrate that the resistivity measurements of thin-film alloy samples can be used for a qualitative high-throughput screening and study of the h…
In this paper we report the determination of oxygen diffusion coefficient for optimally doped manganite thin films of La0.85Na0.15MnO3 (LNMO). The study was performed by means of isothermal conductivity measurements on two different epitaxially oriented thin films grown on SrTiO3 (100) and SrTiO3 (110). The values found for the oxygen diffusion coefficients are around 10-14 cm2s-1. The diffusion seems to be faster for the c-oriented film with respect to the other one (growth on SrTiO3 (110)). The activation energy for the diffusion process is 0.35 eV for the LNMO film on SrTiO3 (100) and 0.66 …
Epitaxial thin films of La0.7Ba0.3MnO3 manganite, deposited using Chemical Solution Deposition technique, were irradiated by 200 MeV Ag+15 ions with a maximum ion dose up to 1x10^12 ions/cm2. Temperature- and magnetic field-dependent resistivity measurements on all the films (before and after irradiation) reveal a sustained decrease in resistivity with increasing ion dose. A maximum dose of 1x10^12 ions/cm2 suppresses resistivity by factors of 3 and 10, at 330 K [insulator-metal (I-M) transition] and at 10 K, respectively. On the other hand, with increasing ion dose, the magnetoresistance (MR)…
The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a correlation should exist, Jc ~ 1/{Rho(300K) - Rho(50K)}, where Rho(300K) - Rho(50K) is the change in the apparent resistivity from 300 K to 50 K. We report measurements of Rho(T) and Jc for a number of fi…
The structure, magnetic and transport properties of thin films of the Heusler ferrimagnet Mn_{2}CoAl have been investigated for properties related to spin gapless semiconductors. Oriented films were grown by molecular beam epitaxy on GaAs substrates and the structure was found to transform from tetragonal to cubic for increasing annealing temperature. The anomalous Hall resistivity is found to be proportional to the square of the longitudinal resistivity and magnetization expected for a topological Berry curvature origin. A delicate balance of the spin-polarized carrier type when coupled with …
A previously unknown effect-giant spatial redistribution of the electric field strength in a crystal under illumination of the structure - was discovered and investigated in real photoresistors on high-resistivity (semi-insulating) semiconductor CdTe crystals (in metal-thin insulator- semiconductor-thin insulator -metal structures). A new concept is proposed for photoelectric phenomena in high- resistivity semiconductor crystals. The concept is based on the idea that the redistribution of the field under such conditions that the carrier lifetime remains unchanged under illumination plays a det…
Manifestations of anomalous conductivity in polar dielectric films is demonstrated for the first time on samples of copolymer of vinylene and vinyl chloride, as was previously observed on modified PVC samples. On the base of these experimental results important new insights into the physical sense of traditionally used in these conditions specific resistivity indicators, both volume and surface, should be replaced by transverse and longitudinal resistance (according to polymer film surface) respectively, because the specific resistivity of polymer composite does not permits to calculate as usu…
We have grown Au/Ag modulated nanostructured thin films by pulsed laser deposition using metallic targets. The growths performed at room temperature involved deposition of alternate layers of the two metals with larger thickness of Au and much lower thickness of Ag (two cases) on crystalline silicon (100) and quartz substrates. However, the characterization revealed that nanostructured configuration is realized in the film. We characterized the films by x-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM) with energy dispersive analysis of x-rays (EDAX), magnetization (…
A realistic tight-binding model is developed and employed to elucidate the resistivity size effect due to steps on Ru thin films. The resistivity of two different film orientations, $(0001)$ and $(1 \bar{1}00)$, is computed for transport along a $[1 1 \bar{2} 0]$ direction both for smooth surfaces and for surfaces with monolayer-high steps. In the case of smooth films, the systems are also studied using solutions to the Boltzmann transport equation (BTE). Interestingly, the resistivity of $(1 \bar{1}00)$ surfaces exhibits a significant size effect even in the absence of surface steps. When mon…
We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$ cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and Co$_2$FeSi grown on (001) SrTiO$_3$. This unusual behavior is not observed in films deposited on other cubic oxide substrates of comparable lattice parameters. The scaling of the resistivity with thickness of the films allow extraction of interface conductance, which can be attributed to a layer of oxygen vacancies confined within 1.9 nm of the interface as revealed …
The resistivity and the Hall effect in the copper-oxide high-temperature superconductor YBa$_{2}$Cu$_{3}$O$_{7-δ}$ (YBCO) are remarkably anisotropic. Using a thin film of YBCO grown on an off-axis cut SrTiO$_3$ substrate allows one to investigate these anisotropic transport properties in a planar and well-defined sample geometry employing a homogeneous current density. In the normal state, the Hall voltage probed parallel to the copper-oxide layers is positive and strongly temperature dependent, whereas the out-of-plane Hall voltage is negative and almost temperature independent. The results c…
High entropy alloy(HEA) films of CrFeCoNiCu were prepared by sputtering, their structure was characterized, and their electric properties measured by temperature dependent Hall and Seebeck measurement. The HEA films show a solid solution with fcc structure, and a 111 texture with columnar grains of widths 15-30 nm extending through film thickness with very many twins. The residual electrical resistivity of the films is around 140 μΩcm and the temperature dependence of the resistivity is metal-like. The temperature coefficient of resistivity (TCR) is small (2 ppm/K). The Hall coefficient is pos…
Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using purely phenomenological approach, with no microscopic theory, we show that the low temperature growth of the resistivity is…
We followed the evolution of the normal and superconducting properties of Al thin films after each session of various successive oxygen irradiations at ambient temperature. Such irradiated films, similar to the granular ones, exhibit enhanced superconductivity, Kondo behavior and negative-curvature resistivity. Two distinct roles of oxygen are identified: as a damage-causing projectile and as an implanted oxidizing agent. The former gives rise to the processes involved in the conventional recovery stages. The latter, considered within the context of the Cabrera-Mott model, gives rise to a mult…
The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 degC. Two major effects are reported: (i) a large anomalous Hall effect amounting to 2 μohm cm, and (ii) a negative magnetoresistance. Both the field-dependent resistivity and Hall resistivity curves coincide with the rescaled magnetization curves, a finding that is consistent with spin-dependent transport. These findings suggest that C:Co nanocomposites are promis…
Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to $μ_{0}H \approx 4~$T below the spin reorientation transition temperature, $T_{s}=185$~K. We find, that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall e…
Despite the low resistivity (~ 1 mohm cm), the metallic electrical transport has not been commonly observed in the inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and degree of spinel inversion on the electric conduction of NiCo2O4 films. In this work, we have studied the effect of microstructure by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (111) and on Al2O3 (0001) substrates. Although the optimal growth condition and the magnetic properties are similar for the NiCo2O4/MgAl2O4 and the NiCo2O4/Al2O3, they …
The temperature dependent resistivity of two Pr1-xCaxMnO3 (x=0.5 and 0.4) thin films grown on LaAlO3 has been studied as a function of hydrostatic pressure (up to 2.5 GPa) and magnetic field (up to 9T). Both samples show a monotonic decrease in the resistivity with an increase in pressure, corresponding to a change of -35% at 2.5 GPa. No pressure induced metal-to-insulator transition was observed in the temperature-dependent resistivity. The non-trivial interaction between high pressure and magnetic field reveals that the effect of pressure cannot be simply rescaled to that of a specific field…
Superconducting thin films of magnesium diboride (MgB$_2$) were prepared on MgO (001) substrate by a molecular beam epitaxy (MBE) method with the co-evaporation conditions of low deposition rate in ultra-high vacuum. The structural and physical properties of the films were studied by RHEED, XRD, XPS, resistivity and magnetization measurements.All films demonstrated superconductivity without use of any post-annealing process.The highest {\it T}$_{c,onset}$ determined by resistivity measurement was about 33K in the present samples.Anisotropic superconducting properties were evaluated by the resi…
Thin films of the high-temperature superconductor HgBa$_2$CaCu$_2$O$_{6+δ}$ have been prepared on SrTiO$_3$ substrates by pulsed-laser deposition of precursor films and subsequent annealing in mercury-vapor atmosphere. The microstructural properties of such films can vary considerably and have been analyzed by x-ray diffraction and atomic force microscopy. Whereas the resistivity is significantly enhanced in samples with coarse-grained structure, the Hall effect shows little variation. This disparity is discussed based on models for transport properties in granular materials. We find that, des…
We present an efficient and general method to identify promising candidate configurations for thin-film oxides and to determine structural characteristics of (metastable) thin-film structures using ab initio calculations. At the heart of this method is the complexity of the oxide bulk structure, from which a large number of thin films with structural building blocks, that is motifs, from metastable bulk oxide systems can be extracted. These span a coarse but well-defined network of initial configurations for which density functional theory (DFT) calculations predict and implement dramatic atom…
Transport properties of an epitaxial film of La_0.7Sr_0.3MnO_3 (LSMO), deposited epitaxially on a LaAlO_3 bi-crystal substrate having a misorientation angle of 9.2 deg., have been studied. The film was patterned into a meander containing 100 grain boundaries. The resistivity of the sample exhibits two components; one originating from the grain boundary regions, and one from the LSMO elements in the meander; the latter contribution is similar to the resistivity of a reference epitaxial LSMO film. The low (<0.5 T) and high (up to 6 T) field magnetoresistance was also studied. The meander show a …
In the resistive phase transition in VO2, temperature excursions from points on the major hysteresis loop produce minor loops. We have found that for sufficiently small excursions these minor loops degenerate into single-valued, non-hysteretic branches (NHBs) having essentially the same or even higher temperature coefficient of resistance (TCR) as the semiconducting phase at room temperature. We explain this behavior and discuss the opportunities it presents for infrared imaging technology based on resistive microbolometers. It is possible to choose a NHB with 100 to 1000 times smaller resisti…
Magnetic and magnetotransport properties of oriented polycrystalline Pr0.58Ca0.42MnO3 thin films prepared in flowing oxygen and air ambient has been investigated. The magnetic ground state of both the films is a frozen cluster glass. In the air annealed film charge order (CO) is quenched and ferromagnetic (FM) transition, which appears at TC=148 K is followed by antiferromagnetic (AFM) transition at TN=104 K. This film shows self-field hysteretic insulator-metal transition (IMT) at TIMC=89 K and TIMW=148 K in the cooling and warming cycle, respectively. Application of magnetic field (H) gradua…
In the present study, we demonstrate the measurement of resistivity tensor ($ρ$) along the magnetic axes of a polycrystalline film of ferromagnetic permalloy (Py). To this end, conventional Hall-bar and a more recent extended van der Pauw methods were utilized for determining 2D $ρ$ in the film plane. The samples were prepared by normal incidence sputter deposition within an in-situ magnetic field to induce in-plane uniaxial magnetic anisotropy in the film. Since $ρ$ might be affected by the internal magnetization of the film, we performed measurements by rotation of a saturating magnetic fiel…
In this work, we studied amorphous carbon ($a$-C) thin films deposited using direct current (dc) and high power impulse magnetron sputtering (HiPIMS) techniques. The microstructure and electronic properties reveal subtle differences in $a$-C thin films deposited by two techniques. While, films deposited with dcMS have a smooth texture typically found in $a$-C thin films, those deposited with HiPIMS consist of dense hillocks surrounded by a porous microstructure. The density of $a$-C thin films is a decisive parameter to judge their quality. Often, x-ray reflectivity (XRR) has been used to meas…
Different thicknesses of cobalt thin films were growth by magnetron sputtering deposition techniques. The films thicknesses were determinated with X ray Photoelectron Spectroscopy (XPS) and Quartz Crystal Monitoring (QCM). XPS is also used to determinate the films quality. The films magnetic properties were determinated by Ferromagnetic Resonance (FMR) technique.
We report on the synthesis of perovskite SrIrO3 thin films using sputtering technique. Single phase (110) oriented SrIrO$_3$ thin films were epitaxially grown on SrTiO3 (001) substrate. Using off-axis XRD $θ-2θ$ scans, we demonstrate that these films exhibit (110) out-of-plane orientation with (001) and (1-10) lying in-plane. The sputtering grown thin films have a smooth, homogeneous surface, and excellent coherent interface with the substrate.
