Colin M. Chow, Hongyi Yu, John R. Schaibley, Pasqual Rivera, Joseph Finney, Jiaqiang Yan, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Wang Yao, David H… 展开作者
Colin M. Chow, Hongyi Yu, John R. Schaibley, Pasqual Rivera, Joseph Finney, Jiaqiang Yan, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Wang Yao, David H. Cobden, Xiaodong Xu
Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We employ vertical van der Waals (vdW) heterostructures with monolayer WSe2 as the semiconductor and the wide band gap hexagonal boron nitride (hBN) as the tunnel barrier to preferentially transmit high-energy Auger-excited carriers to a graphite electrode. The unambiguous signatures of Auger processes are a rise in the photocurrent when excitons are created by resonant excitation, and negative differential photoconductance resulting from the shifts of the exciton resonances with voltage. We detect holes Auger-excited by both neutral and charged excitons, and find that the Auger scattering is surprisingly strong under weak excitation. The selective extraction of Auger carriers at low, controlled carrier densities that is enabled by vdW heterostructures illustrates an important addition to the techniques available for probing relaxation processes in 2D materials.
We propose a novel phonon assisted Auger process unique to the electronic band structure of monolayer transition metal dichalcogenides (TMDCs), which dominates the radiative recombination of ground state excitons in Tungsten based TMDCs. Using experimental and DFT computed values for the exciton energies, spin-orbit splittings, optical matrix element, and the Auger matrix elements, we find that the Auger process begins to dominate at carrier densities as low as $10^{9-10}~{\rm cm^{-2}}$, thus providing a plausible explanation for the low quantum efficiencies reported for these materials.
The rate at which excited charge carriers relax to their equilibrium state affects many aspects of the performance of nanoscale devices, including switching speed, carrier mobility and luminescent efficiency. Better understanding of the processes that govern carrier relaxation therefore has important technological implications. A significant increase in carrier-carrier interactions caused by strong spatial confinement of electronic excitations in semiconductor nanostructures leads to a considerable enhancement of Auger effects, which can further result in unusual, Auger-process-controlled reco…
We present a theory of highly excited interacting carriers confined in a semiconductor nanostructure, incorporating Auger coupling between excited states with different number of excitations. The Coulomb matrix elements connecting exciton, bi-exciton and tri-exciton complexes are derived and an intuitive picture of breaking neutral multi-exction complexes into positively and negatively charged multi-exciton complexes is given. The general approach is illustrated by analyzing the coupling of biexciton and exciton in CdSe spherical nanocrystals. The electron and hole states are computed using at…
The strong Coulomb interactions and the small exciton radii in two-dimensional metal dichalcogenides can result in very fast capture of electrons and holes of excitons by mid-gap defects from Auger processes. In the Auger processes considered here, an exciton is annihilated at a defect site with the capture of the electron (or the hole) by the defect and the hole (or the electron) is scattered to a high energy. In the case of excitons, the probability of finding an electron and a hole near each other is enhanced many folds compared to the case of free uncorrelated electrons and holes. Conseque…
In a recent letter [Phys. Rev. Lett. 110, 177406 (2013)], presenting a spectroscopic study of the electrons emitted from the GaN p-cap of a forward-biased InGaN/GaN light-emitting diode (LED), the authors observed at least two distinct peaks in the electron energy distribution curves (EDCs), separated by about 1.5 eV, and concluded that the only viable explanation for the higher-energy peak was Auger recombination in the LED active region. We present full-band Monte Carlo simulations suggesting that the higher-energy peaks in the measured EDCs are probably uncorrelated with the carrier distrib…
The observed intermittent light emission from colloidal semiconductor nanocrystals has long been associated with Auger recombination assisted quenching. We test this view by observing transient emission dynamics of CdSe/CdS/ZnS semiconductor nanocrystals using time-resolved photon counting. The size and intensity dependence of the observed decay dynamics are inconsistent with the those expected from Auger processes. Moreover, the data suggests that in the `off' state the quantum dot cycles in a three-step process: photoexcitation, rapid trapping and subsequent slow nonradiative decay.
We describe recent experimental efforts to perform polarization-resolved optical spectroscopy of monolayer transition-metal dichalcogenide semiconductors in very large pulsed magnetic fields to 65 tesla. The experimental setup and technical challenges are discussed in detail, and temperature-dependent magneto-reflection spectra from atomically thin tungsten disulphide (WS$_2$) are presented. The data clearly reveal not only the valley Zeeman effect in these 2D semiconductors, but also the small quadratic exciton diamagnetic shift from which the very small exciton size can be directly inferred.…
Moiré superlattices of two-dimensional van der Waals materials have emerged as a powerful platform for designing electronic band structures and discovering emergent physical phenomena. A key concept involves the creation of long-wavelength periodic potential and moiré bands in a crystal through interlayer hybridization when two materials are overlaid. Here we demonstrate a new approach based on spatially periodic dielectric screening to create moiré bands in a monolayer semiconductor. It relies on reduced dielectric screening of the Coulomb interactions in monolayer semiconductors and their en…
In this letter, we present non-degenerate ultrafast optical pump-probe studies of the carrier recombination dynamics in MoS$_{2}$ monolayers. By tuning the probe to wavelengths much longer than the exciton line, we make the probe transmission sensitive to the total population of photoexcited electrons and holes. Our measurement reveals two distinct time scales over which the photoexcited electrons and holes recombine; a fast time scale that lasts $\sim$2 ps and a slow time scale that lasts longer than $\sim$100 ps. The temperature and the pump fluence dependence of the observed carrier dynamic…
Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties can provide further degrees of freedom requisite for quantum information and spintronics. When seeking to combine these material features into QD structures, however, confinement can cause hybridization that inhibits the robustness of these emergent properties for insertion into…
In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this field scale is substantial --tens of teslas or more-- due to heavy carrier masses and huge exciton binding energies. Here we report absorption spectroscopy of monolayer MoS$_2$, MoSe$_2$, MoTe$_2$, and WS$_2$ in very high magnetic fields to 91~T. We follow the diamagnetic shifts and valley Zeeman splittings of not only the exciton's $1s$ ground state but also …
Spectroscopic studies of semiconductor quantum dots (SQDs) addressing the problem of non-radiative carrier losses is vital for the improvement in the efficiency of various light-emitting devices. Various designs of SQDs emitter like doping, forming core-shell and alloying has been attempted to suppress non-radiative recombination. In this article, we show that forming a hybrid with metal nanoparticles (MNP) having localized surface plasmon resonance overlapped with the emission spectrum of SQD, the non-radiative carrier loss via Auger recombination can be mitigated. Using steady-state and time…
The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through exciton-exciton annihilation (EEA), an Auger-like recombination process limiting the efficiency of optoelectronic applications. Although EEA is a well-known and particularly important process in atomically thin semiconductors determining exciton lifetimes and affecting transport at elevated densities, its microscopic origin has remained elusive. In this joi…
A new two-dimensional (2D) layered material, namely, titanium trisulfide (TiS$_3$) monolayer sheet, is predicted to possess desired electronic properties for nanoelectronic applications. On basis of the first-principles calculations within the framework of density functional theory and deformation theory, we show that the TiS$_3$ 2D crystal is a direct gap semiconductor with a band gap of 1.06 eV and high carrier mobility. More remarkably, the in-plane electron mobility of the 2D TiS$_3$ is highly anisotropic, amounting to $\sim$10,000 cm$^2$V$^{-1}$s$^{-1}$ in the \emph{b} direction, which is…
In semiconductor nanostructures nonradiative Auger recombination is enhanced by the presence of boundaries which relax the momentum conservation and thereby removes the threshold reduction for these processes. We propose a method to strongly reduce the Auger recombination rate by injecting spin-polarized carriers. Our method is illustrated on the example of a quantum well in which the spin-orbit coupling of conduction band is negligible as compared to valence band and thus holes can be considered as spin-unpolarized. The suppression factor of the Auger recombination is determined by the two-di…
The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large center-of-mass momentum located outside the light cone of dispersion relations. Efficient relaxation from bright exciton states to dark states suppresses the quantum yield of photon emission. In addition, the radiative recombination of excitons is heavily influenced by Auger-type exciton-exciton scattering, which yields another nonradiative relaxation channel at room…
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor …
The fast nonradiative decay of multiexcitonic states via Auger recombination is a fundamental process affecting a variety of applications based on semiconductor nanostructures. From a theoretical perspective, the description of Auger recombination in confined semiconductor nanostructures is a challenging task due to the large number of valance electrons and exponentially growing number of excited excitonic and biexcitonic states that are coupled by the Coulomb interaction. These challenges have restricted the treatment of Auger recombination to simple, noninteracting electron-hole models. Here…
We report magneto-absorption spectroscopy of gated WSe$_2$ monolayers in high magnetic fields up to 60~T. When doped with a 2D Fermi sea of mobile holes, well-resolved sequences of optical transitions are observed in both $σ^\pm$ circular polarizations, which unambiguously and separately indicate the number of filled Landau levels (LLs) in both $K$ and $K'$ valleys. This reveals the interaction-enhanced valley Zeeman energy, which is found to be highly tunable with hole density $p$. We exploit this tunability to align the LLs in $K$ and $K'$, and find that the 2D hole gas becomes unstable agai…
Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pumping the Fermi sea of 2D electrons to a high degree of spin/valley polarization (up to 75%) using circularly-polarized light, the lateral diffusion of the electron polarization can be mapped out via the photoluminescence induced by a spatially-separated and linearly-polarized probe laser. Up to 25% spin-valley polarization is observed at pump-probe separations up to 20 microns. Char…
Using time-resolved optical Kerr rotation, we measure the low temperature valley dynamics of resident electrons and holes in exfoliated WSe$_2$ monolayers as a systematic function of carrier density. In an effort to reconcile the many disparate timescales of carrier valley dynamics in monolayer semiconductors reported to date, we directly compare the doping-dependent valley relaxation in two electrostatically-gated WSe$_2$ monolayers having different dielectric environments. In a fully-encapsulated structure (hBN/WSe$_2$/hBN, where hBN is hexagonal boron nitride), valley relaxation is found to…
We report 65 tesla magneto-absorption spectroscopy of exciton Rydberg states in the archetypal monolayer semiconductor WSe$_2$. The strongly field-dependent and distinct energy shifts of the 2s, 3s, and 4s excited neutral excitons permits their unambiguous identification and allows for quantitative comparison with leading theoretical models. Both the sizes (via low-field diamagnetic shifts) and the energies of the $ns$ exciton states agree remarkably well with detailed numerical simulations using the non-hydrogenic screened Keldysh potential for 2D semiconductors. Moreover, at the highest magn…
2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By mapping momentum-resolved electronic states using time-resolved and angle-resolved photoemission spectroscopy (ARPES), we reveal that monolayer Ag confined between bilayer graphene and SiC is a large gap (> 1 eV) 2D semiconductor, consistent with GW-corrected density fun…
The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy separations matching known phonons, and appear only with electron doping. They possess homogenous spatial and spectral distribution, strong power saturation, and anomalously long population (> 6 $μ$s) and…
Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it has been shown experimentally that quantum yield in MoS2 and WSe2 monoatomic layers can reach values close to unity when electrostatic doping makes them intrinsic semiconductors. However, the available theoretical description does not give an understanding of the physical mechanisms underlying in the gate voltage control of quantum yield.This work is an attempt to propose a consistent semi-phenomenological theory of p…
We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The quantum controls are discussed when the confinement induces valley hybridization and when the valley hybridization is absent. We show that the bulk valley and spin optical selection rules can be inherited in different forms in the two scenarios, both of which allow the definition of spin-valley qubit with desired optical controllability. We also investigate nucle…
Spin-1 condensed matter systems characterized by the combination of a Dirac-like dispersion and flat bands are ideal for realizing high-temperature electronics and spintronic technologies in the absence of external magnetic field. In this study, we propose a three-band tight binding model, with spin-polarized Haldane-like next-nearest-neighbour tunnelling, on dice lattice and show that spin-1 Dirac half-metal, spin-1 Dirac spin-gapless semiconductor, and spin-polarized spin-1 massive Dirac dispersion with nontrivial topology can exist in two-dimensional ferromagnetic condensed matter systems w…
We examine the structural properties of free standing II-VI and III-V semiconductors at the monolayer limit within first principle density functional theory calculations. A non-polar buckled structure was found to be favoured over a polar buckled structure. While an obvious reason for this may be traced to the contribution from dipole dipole interactions present in the polar structure which would destabilize it with respect to the nonpolar structure, Coulomb interactions between electrons on the cations and anions are found to be the reason for the nonpolar structure to be favoured. A route to…
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and valve devices through band engineering. Instead of the magnetic proximity effect that has been extensively used in previous studies, in our strategy, the electron valleys are directly coupled to the spin-polarized states of the two-dimensional ferromagnets. We find that this coupling results in a valley-selective gap opening due to the spin-momentum locking…
The coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects because they possess unique spin-valley locking physics for hosting rich excitonic species and the reduced screening for strong Coulomb interactions. Here, we report the observation of multiple valley phonons, phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone, and the resulting exciton complexes…
In a multi-electron atom, an excited electron can decay by emitting a photon. Typically, the leftover electrons are in their ground state. In a radiative Auger process, the leftover electrons are in an excited state and a redshifted photon is created. In a semiconductor quantum dot, radiative Auger is predicted for charged excitons. Here we report the observation of radiative Auger on trions in single quantum dots. For a trion, a photon is created on electron-hole recombination, leaving behind a single electron. The radiative Auger process promotes this additional (Auger) electron to a higher …
Moiré excitons are emergent optical excitations in 2D semiconductors with deep moiré superlattice potentials. While these excitations have been realized in several platforms, a system with dynamically tunable moiré potential to tailor the moiré exciton properties is yet to be realized. Here, we present a continuously tunable moiré potential in a monolayer WSe2 that is enabled by its proximity to twisted bilayer graphene (TBG) near the magic-angle. Due to its flat electronic bands, charge distribution is highly localized and forms a triangular lattice in TBG. Tuning the local charge density via…
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk…
We investigate Landau-quantized excitonic absorption and luminescence of monolayer WSe$_2$ under magnetic field. We observe gate-dependent quantum oscillations in the bright exciton and trions (or exciton-polarons) as well as the dark trions and their phonon replicas. Our results reveal spin- and valley-polarized Landau levels (LLs) with filling factors $n = +0, +1$ in the bottom conduction band and $n = -0$ to $-6$ in the top valence band, including the Berry-curvature-induced $n = \pm0$ LLs of massive Dirac fermions. The LL filling produces periodic plateaus in the exciton energy shift accom…
Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition-metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exciton densities, nonradiative exciton-exciton annihilation (EEA) enhanced by van-Hove singularity (VHS) rapidly degrades their PL QY at high exciton densities and limits their utility in practical appl…
We address the problem of free carrier screening of exciton states in two-dimensional monolayer semiconductors. Basic theoretical considerations are presented concerning the applicability of the commonly used static approximation of the screening effect and the implications are discussed. We show that the low-frequency models lead to a major overestimation of the free carrier response and are inadequate to describe the screening of strongly bound excitons in monolayer materials. The presented arguments are consistent with existing high-level many-body theories and transparently illustrate the …
Strong Coulomb interaction in monolayer transition metal dichalcogenides can facilitate nontrivial many-body effects among excitonic complexes. Many-body effects like exciton-exciton annihilation (EEA) have been widely explored in this material system. However, a similar effect for charged excitons (or trions), that is, trion-trion annihilation (TTA), is expected to be relatively suppressed due to repulsive like-charges, and has not been hitherto observed in such layered semiconductors. By a gate-dependent tuning of the spectral overlap between the trion and the charged biexciton through an "a…
Tightly bound excitons in monolayer semiconductors represent a versatile platform to study two-dimensional propagation of neutral quasiparticles. Their intrinsic properties, however, can be severely obscured by spatial energy fluctuations due to a high sensitivity to the immediate environment. Here, we take advantage of the encapsulation of individual layers in hexagonal boron nitride to strongly suppress environmental disorder. Diffusion of excitons is then directly monitored using time- and spatially-resolved emission microscopy at ambient conditions. We consistently find very efficient prop…
Room-temperature ferromagnetic semiconductor is vital in nonvolatile digital circuits and it can provide an idea system where we can make use of both charge and spin of electrons. However, seeking room-temperature ferromagnetic semiconductors is still just an appealing idea that has never been realized in practice up to now. Here we demonstrate that graphene monolayer, hybridized with underlying Ni(111) substrate, is the room-temperature ferromagnetic semiconductor that has been continuously searched for decades. Our spin-polarized scanning tunnelling microscopy (STM) experiments, complemented…
We present first-principles results on the structural, electronic, and magnetic properties of a new family of two-dimensional antiferromagnetic (AFM) manganese chalcogenides, namely monolayer MnX and Janus XMnY (X, Y= S, Se, Te), among which monolayer MnSe was recently synthesized in experiments [\href{https://pubs.acs.org/doi/abs/10.1021/acsnano.1c05532}{ACS Nano 15 (8),13794 (2021)}]. By carrying out calculations of the phonon dispersion and \textit{ab-initio} molecular dynamics simulations, we first confirmed that these systems, characterized by an unconventional strongly coupled bilayer at…
Excitons in MoS2 dominate the absorption and emission properties of the two-dimensional system. Here, we study the microscopic origin of the electroluminescence from monolayer MoS2 fabricated on a heavily p-type doped silicon substrate. By comparing the photoluminescence and electroluminescence of a MoS2 diode, direct-exciton and bound-exciton related recombination processes can be identified. Auger recombination of the exciton-exciton annihilation of bound exciton emission is observed under a high electron-hole pair injection rate at room temperature. We expect the direct exciton-exciton anni…
In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal-2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barr…
The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and…
We study theoretically the non-equilibrium exciton transport in monolayer transition metal dichalcogenides. We consider the situation where excitons interact with non-equilibrium phonons, e.g., under the conditions of localized excitation where a ``hot spot'' in formed. We develop the theory of the exciton drag by the phonons and analyze in detail the regimes of diffusive propagation of phonons and ballistic propagation of phonons where the phonon wind is formed. We demonstrate that a halo-like spatial distribution of excitons akin observed in [Phys. Rev. Lett. 120, 207401 (2018)] can be forme…
Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate from first-principles calculations that monolayer Ti2C and Ti2N exhibit nearly half-metallic ferromagnetism with the magnetic moments of 1.91 and 1.00 UB per formula unit, respectively, while monolayer V2C is a metal with instable antiferromagnetism, and monolay…
Auger-ionized carriers in a one-dimensional semiconductor are predicted to result in a strong band-gap renormalization. Isolated single-walled carbon nanotubes (SWCNT) under high-intensity laser irradiation exhibit strong nonlinear photoluminescence (PL) due to exciton-exciton annihilation (EEA). The presence of exciton disassociation during the rapid Auger-ionization caused by EEA would lead to a strong nonlinear absorption. By simultaneously measuring SWCNT PL and optical absorption of isolated SWCNT clusters in the PL saturation regime, we give evidence that Auger-ionized excitons do not di…
We demonstrate robust power- and wavelength-dependent optical bistability in fully suspended monolayers of WSe2 near the exciton resonance. Bistability has been achieved under continuous-wave optical excitation at an intensity level of 10^3 W/cm^2. The observed bistability is originated from a photo-thermal mechanism, which provides both optical nonlinearity and passive feedback, two essential elements for optical bistability. Under a finite magnetic field, the exciton bistability becomes helicity dependent, which enables repeatable switching of light purely by its polarization.
We calculate the rate of non-radiative, Forster-type energy transfer (ET) from an excited epitaxial quantum well (QW) to a proximal monolayer of semiconductor nanocrystal quantum dots (QDs). Different electron-hole configurations in the QW are considered as a function of temperature and excited electron-hole density. A comparison of the theoretically determined ET rate and QW radiative recombination rate shows that, depending on the specific conditions, the ET rate is comparable to or even greater than the radiative recombination rate. Such efficient Forster ET is promising for the implementat…
Manipulation of Rashba effects in two-dimensional (2D) electron systems is highly desirable for controllable applications in spintronics and optoelectronics. Here, by combining first-principles investigation and model analysis, we use uniaxial stress to control BiTeI monolayer as a Rashba 2D semiconductor for useful spin and transport properties. We find that the stress-driven electron system can be described by an effective anisotropic Rashba model including all the three Pauli matrixes, and uniaxial stress allows an out-of-plane spin component. When appropriate electron carriers are introduc…
We study the interface exciton at lateral type II heterojunctions of monolayer transition metal dichalcogenides (TMDs), where the electron and hole prefer to stay at complementary sides of the junction. We find that the 1D interface exciton has giant binding energy in the same order as 2D excitons in pristine monolayer TMDs although the effective radius (electron-hole seperation) of interface exciton is much larger than that of 2D excitons. The binding energy, exciton radius and optical dipole strongly depends on the band offset at the junction. The inter-valley coupling induced by the electro…
We study theoretically weak localization of excitons in atomically-thin transition metal dichalcogenides. The constructive interference of excitonic de Broglie waves on the trajectories forming closed loops results in a decrease of the exciton diffusion coefficient. We calculate the interference contribution to the diffusion coefficient for the experimentally relevant situation of exciton scattering by acoustic phonons and static disorder. For the acoustic phonon scattering, the quantum interference becomes more and more important with increasing the temperature. Our estimates show that the qu…
