We recently reported on a method to determine the easy axis position in a 10 nm thick film of the fully compensated antiferromagnet CuMnAs. The film had a uniaxial magnetic anisotropy and the technique utilized a magneto-optical pump and probe experiment [Nature Photonics 11, 91 (2017)]. In this contribution we discuss the applicability of this method for the investigation of a broader set of epitaxial CuMnAs films having different thicknesses. This work reveals that the equilibrium magnetic anisotropy can be studied only in samples where this anisotropy is rather strong. However, in the majority of CuMnAs films, the impact of a strong pump pulse induces nano-fragmentation of the magnetic domains and, therefore, the magnetic anisotropy measured by the pump-probe technique differs substantially from that in the equilibrium conditions. We also demonstrate that optical pump-probe experiment can be used very efficiently to study the local heating and heat dissipation in CuMnAs epitaxial layers. In particular, we determined the electron-phonon relaxation time in CuMnAs. We also observed that for a local film heating by a focused laser the thinner films are heated more, but the heat is dissipated considerably faster than in the case of thicker films. This illustrates that the optical pump-probe experiment is a valuable characterization tool for the heat management optimization in the CuMnAs memory devices and can be applied in a similar way to those used during heat-assisted magnetic recording (HAMR) technology development for the latest generation of hard drive disks.
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the surface magnetization. It is predicted, based on first-principles calculations, that easy-axis anisotropy can be achieved in bulk CuMnAs by substituting a few percent of As atoms by Ge, Si, Al, or B. This effect is attributed to the changing occupation of certain electronic bands near the Fermi level induced by the hole doping. The calculated temperature dependenc…
Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffractio…
Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-resolved photoemission spectroscopy (ARPES) are reported, including Fermi surfaces (FS) and energy-wavevector dispersions. After correcting for a chemical potential shift of $\approx-390$ meV (hole doping), there is excellent agreement of FS, orbital character of bands, and Fermi velocities between the experiment and density functional theory calcul…
The effect of Cu substitution on the stability of the CuMnAs tetragonal phase was studied both experimentally and by ab initio calculations. Polycrystalline samples with various compositions Cu$_{1+x}$Mn$_{1-x}$As $(x = 0 - 0.5)$ were synthetized. The tetragonal phase of CuMnAs is found to be stabilized by substituting Mn by Cu in the amount of $x$ ~ 0.1 or higher. This observation is supported by ab initio calculations of the total energy of the tetragonal and orthorhombic phases; with increasing Cu content the tetragonal phase is favoured. Small variations of composition thus allow to grow s…
Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find utility in fields ranging from magnetic memories to optical signal processing. However, the absence of a net magnetic moment and the ultra-short magnetization dynamics timescales make antiferromagnets …
We report the physical properties of orthorhombic o-CuMnAs single crystal, which is predicted to be a topological Dirac semimetal with magnetic ground state and inversion symmetry broken. o-CuMnAs exhibits an antiferromagnetic transition with TN ~ 312 K. Further characterizations of magnetic properties suggest that the AFM order may be canted with the spin orientation in the bc plane. Small isotropic MR and linearly field-dependent Hall resistivity with positive slope indicate that single hole-type carries with high density and low mobility dominate the transport properties of o-CuMnAs. Furthe…
Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $\sim$ 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field. These properties of the switched state are discussed in the…
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic line…
We describe measurements of the uniaxial magnetic anisotropy and spin-flop rotation of the Néel vector in antiferromagnetic CuMnAs thin films using neutron diffraction. The suppression of the magnetic (100) peak under magnetic fields is observed for films as thin as 20 nm indicating that they undergo a spin-flop transition. Good agreement is found between neutron diffraction and electron transport measurements of the spin-flop rotation in the same layer, with a similar shape and hysteresis of the obtained curves, while the neutron measurements provide a quantitative determination of the spin f…
Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal variant of CuMnAs was shown to be electrically switchable by this intrinsic spin-orbit effect and its use in memory cells with memristive properties has been recently demonstrated for high-quality films gro…
We report on a theoretical and experimental study of CuMn-V antiferromagnets. Previous works showed low-temperature antiferomagnetism and semimetal electronic structure of the semi-Heusler CuMnSb. In this paper we present theoretical predictions of high-temperature antiferromagnetism in the stable orthorhombic phases of CuMnAs and CuMnP. The electronic structure of CuMnAs is at the transition from a semimetal to a semiconductor and we predict that CuMnP is a semiconductor. We show that the transition to a semiconductor-like band structure upon introducing the lighter group-V elements is presen…
Temperature-dependent resistivity and magnetoresistance are measured in bulk tetragonal phase of antiferromagnetic CuMnAs and the latter is found to be anisotropic both due to structure and magnetic order. We compare these findings to model calculations with chemical disorder and finite-temperature phenomena included. The finite-temperature ab initio calculations are based on the alloy analogy model implemented within the coherent potential approximation and the results are in fair agreement with experimental data. Regarding the anisotropic magnetoresistance (AMR) which reaches a modest magnit…
Tetragonal CuMnAs was the first antiferromagnet where reorientation of the Néel vector was reported to occur by an inverse spin galvanic effect. A complicating factor in the formation of phase-pure tetragonal CuMnAs is the formation of an orthorhombic phase with nearly the same stoichiometry. Pure-phase tetragonal CuMnAs has been reported to require an excess of Cu to maintain a single phase in traditional solid state synthesis reactions. Here we show that subtle differences in diffraction patterns signal pervasive inhomogeneity and phase separation, even in Cu-rich Cu$_{1.18}$Mn$_{0.82}$As. F…
Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate t…
Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by sc…
Noncollinear magnetic moments in antiferromagnets (AFM) lead to a complex behavior of electrical transport, even to a decreasing resistivity due to an increasing temperature. Proper treatment of such phenomena is required for understanding AFM systems at finite temperatures; however first-principles description of these effects is complicated. With ab initio techniques, we investigate three models of spin fluctuations (magnons) influencing the transport in AFM CuMnAs; the models are numerically feasible and easily implementable to other studies. We numerically justified a fully relativistic co…
We report the single-crystal growth and characterization of a new hexagonal phase, Cu$_{0.82}$Mn$_{1.18}$As, in the Cu-Mn-As system. This compound contains the same square-pyramidal MnAs$_5$ units as the tetragonal and orthorhombic polymorphs of CuMnAs. Calorimetry, magnetometry, and neutron diffraction measurements reveal antiferromagnetic ordering at 270 K. The magnetic structure consists of a triangular arrangement of spins in the $ab$ plane. Hexagonal Cu$_{0.82}$Mn$_{1.18}$As shows resistivity that varies only weakly from 5 K to 300 K, and is many times higher than tetragonal CuMnAs, indic…
Recently, orthorhombic CuMnAs has been proposed to be a magnetic material where topological fermions exist around the Fermi level. Here we report the magnetic structure of the orthorhombic Cu0.95MnAs and Cu0.98Mn0.96As single crystals. While Cu0.95MnAs is a commensurate antiferromagnet (C-AFM) below 360 K with a propagation vector of k = 0, Cu0.98Mn0.96As undergoes a second-order paramagnetic to incommensurate antiferromagnetic (IC-AFM) phase transition at 320 K with k = (0.1,0,0), followed by a second-order IC-AFM to C-AFM phase transition at 230 K. In the C-AFM state, the Mn spins order para…
Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave functions) which has so far been tested only to a limited extent. We show that AC permittivity (obtained from ellipsometry) and UV photoelectron spectra agree with density functional calculations. Tog…
The periodic deviations of ferromagnetic and antiferromagnetic spins from corresponding uniform configurations are shown to be energetically favorable close to a compensated interface of ferromagnetic antiferromagnetic bilayer. The amplitude of the deviations decreases exponentially into the film volumes as a function of a coordinate perpendicular to the interface. The interaction energy is found to be proportional to a square of a scalar product of unit ferromagnetic and antiferromagnetic vectors.
Epitaxial thin films of CuMnAs have recently attracted attention due to their potential to host relativistic antiferromagnetic spintronics and exotic topological physics. Here we report on the structural and electronic properties of a tetragonal CuMnAs thin film studied using scanning tunneling microscopy (STM) and density functional theory (DFT). STM reveals a surface terminated by As atoms, with the expected semi-metallic behavior. An unexpected zigzag step edge surface reconstruction is observed with emerging electronic states below the Fermi energy. DFT calculations indicate that the step …
Orthorhombic CuMnAs has been proposed as an antiferromagnetic semimetal hosting nodal line and Dirac points around the Fermi level. We investigate relations between the topological bands and transport phenomena, i.e. spin Hall effect and anomalous Hall effect, in orthorhombic CuMnAs with first-principles calculations combined with symmetry analysis of magnetic structures and of (spin) Berry curvature. We show the nodal line gapped with spin-orbit coupling in CuMnAs dominantly generates large spin Hall conductivity in the ground state. Although the magnetic symmetry in the ground state of CuMnA…
The properties of antiferromagnetic ferromagnetic bilayer have been studied using self-consistent mean-field approximation for Heisenberg Hamiltonian. The perpendicular exchange coupling has been revealed in a bilayer with a compensated interface. For a uniform antiferromagnetic film a symmetrical hysteresis loop has been calculated, because the transverse instability develops within the antiferromagnetic film at certain critical value of external magnetic field. On the other hand, shifted hysteresis loop with a finite exchange bias field has been obtained for a non-uniform antiferromagnetic f…
The analytical theory for a ferromagnetic antiferromagnetic bilayer with a compensated interface has been developed using an explicit expression for the interfacial interaction energy density. A stability of a solution describing domain walls within ferromagnetic and antiferromagnetic films has been investigated. It is shown that even for high values of surface interaction strength a transverse instability originates within the antiferromagnetic film, because the deviation of the unit antiferromagnetic vector out of the interface plane becomes energetically favorable in large enough external m…
In recent years, antiferromagnetic spintronics has received much attention since ideal antiferromagnets do not produce stray fields and are much more stable to external magnetic fields compared to materials with net magnetization. Akin to antiferromagnets, compensated ferrimagnets have zero net magnetization but have the potential for large spin-polarization and strong out of plane magnetic anisotropy, and, hence, are ideal candidates for high density memory applications. Here, we demonstrate that a fully compensated magnetic state with a tunable magnetic anisotropy is realized in Mn-Pt-Ga bas…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a perpendicularly magnetized Pt/[Co/Pd]/Ru/[Co/Pd] SAF structure, which exhibits completely compensated magnetization and an exchange coupling field up to 2100 Oe. The magnetizations of two Co/Pd layers can be switched between two antiparallel states simultaneously by spin-orbit torque. The magnetization switching can be read out due to much stronger spin-orb…
We show how compensated antiferromagnetic spins can be implemented in the micromagnetic simulation program MuMax3. We demonstrate that we can model spin flop coupling as a uniaxial anisotropy for small canting angles and how we can take into account the exact energy terms for strong coupling between a ferromagnet and compensated antiferromagnet. We also investigate the training effect in biaxial antiferromagnets and reproduce the training effect in a polycrystalline IrMn/CoFe bilayer.
We theoretically investigate the spin Seebeck effect (SSE) in antiferromagnets and ferrimagnets, and show that the SSE vanishes in antiferromagnets but survives in ferrimagnets even at the magnetization compensation point despite the absence of its saturation magnetization. The non-vanishing SSE in ferrimagnets stems from two non-degenerate magnons. We demonstrate that the magnitude of the SSE in ferrimagnets is unchanged across the magnetization compensation point.
Nonlinear Magnetic Orbital Hall Effect Induced by Spin-Orbit Coupling
Singapore University of Technology and Design（新加坡科技设计大学）；Beihang University（北京航空航天大学）；Yanshan University（燕山大学）；Fudan University（复旦大学）；Lanzhou University（兰州大学）；The Hong Kong Polytechnic University（香港理工大学）
Anisotropic antiferromagnetic systems of dimensionality greater than one in an external field are shown to exhibit a complicated array of ground states depending on the spin structure of the surface. The simplest structure that exhibits these effects is the spin ladder with the surface being the ladder end, which can be either compensated or non-compensated spins. The structure with the compensated end has a surface spin flop phase, the non-compensated end has a discommensurational phase, and the transition to these phases can be either first or second order with a tricritical point.
The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimat…
Sub-spin-flop switching of a fully compensated antiferromagnet by magnetic field
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所凝聚态物理国家实验室）；School of Physical Sciences, University of Chinese Academy of Sciences（中国科学院大学物理科学学院）；International Center for Quantum Materials, School of Physics, Peking University（北京大学物理学院量子材料科学中心）
Photoinduced Odd- and Mixed-Parity Magnetism in Collinear Antiferromagnets
School of Physics, Northwest University（西北大学物理学院）；Institute of Modern Physics, Northwest University（西北大学现代物理研究所）；School of physics and astronomy, Beijing Normal University（北京师范大学物理与天文学院）；College of Materials Science and Engineering, Changsha University of Science & Technology（长沙理工大学材料科学与工程学院）
Response properties that are purely intrinsic to physical systems are of paramount importance in physics research, as they probe fundamental properties of band structures and allow quantitative calculation and comparison with experiment. For anomalous Hall transport in magnets, an intrinsic effect can appear at the second order to the applied electric field. We show that this intrinsic second-order anomalous Hall effect is associated with an intrinsic band geometric property -- the dipole moment of Berry-connection polarizability (BCP) in momentum space. The effect has scaling relation and sym…
Magnetic anisotropy phenomena in bimetallic antiferromagnets Mn$_2$Au and MnIr are studied by first-principles density functional theory calculations. We find strong and lattice-parameter dependent magnetic anisotropies of the ground state energy, chemical potential, and density of states, and attribute these anisotropies to combined effects of large moment on the Mn 3$d$ shell and large spin-orbit coupling on the 5$d$ shell of the noble metal. Large magnitudes of the proposed effects can open a route towards spintronics in compensated antiferromagnets without involving ferromagnetic elements.
Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the key which, as we show here, allows us to control antiferromagnets by electrical means analogous to those which paved the way to the development of ferromagnetic spintronics applications. The key noted b…
Magnetic compensated state attracted much interests due to the observed large exchange bias and large coercivity, and its potential applications in the antiferromagnetic spintronics with merit of no stray field. In this work, by ab initio calculations with KKR-CPA for the treatment of random substitution, we obtain the complete compensated states in the Ni (Pd, Pt) doped Mn3Ge-based D022-type tetragonal Heusler alloys. We find the total moment change is asymmetric across the compensation point (at ~ x = 0.3) in Mn3-xYxGe (Y = Ni, Pd, Pt), which is highly conforming to that experimentally obser…
In the framework of phenomenological model we consider dynamics of a compensated collinear antiferromagnet (AFM) in the presence of spin-polarised current. The model is based on the assumption that AFM spins are localised and spin torque is transferred to each magnetic sublattice independently. It is shown that in AFM spin current i) can be a source of the "negative friction"; and ii) modifies spin-wave frequencies. Equilibrium state of AFM can be destabilized by the current polarized in parallel to AFM vector. Threshold current at which the loss of stability takes place depends upon the magne…
Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we report spin-orbit torque induced magnetization switching of ferrimagnetic Co1-xTbx films with perpendicular magnetic anisotropy. Current induced switching is demonstrated in all of the studied film compositions, including those near the magnetization compensation point. The spin-orbit torque induced effective field is further quantified in the domain wall moti…
Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering $\mathrm{MnBi_2Te_4}$ as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of $\mathrm{MnBi_2Te_4}$ is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which sh…
Data-Driven Discovery of Unconventional Antiferromagnets
KTH Royal Institute of Technology（皇家理工学院）；Chinese Academy of Sciences（中国科学院）；University of Nottingham Ningbo China（诺丁汉大学宁波分校）；University of Chinese Academy of Sciences（中国科学院大学）
The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin films. However, the reported decay length in thin films has so far been limited to a few nanometers. In this work, we achieve efficient spin-wave propagation, over micrometer distances, in thin films of t…
We have a choice of methods for examining domains at the surface of a ferromagnet that depend on probing the stray field distribution, but these methods do not work in antiferromagnets or compensated ferrimagnets, which produce no stray field. The discovery of compensated ferrimagnetic half-metals allows for the local magnetization state to be observed directly with polarized light. The example considered here, Mn$_{2}$Ru$_{x}$Ga, has two inequivalent but oppositely-aligned Mn sublattices with equal and opposite moments, but only one of them contributes spin polarized conduction electrons at t…
The fast spin dynamics provide many opportunities for the future communication and memory technologies. One of the most promising examples is the domain wall (DW) racetrack memory. To achieve fast device performances, the high-speed motion of DWs is naturally demanded that leaves antiferromagnets (AFMs) and compensated ferrimagnets (FIMs) as the promising materials. While controlling and probing the dynamics of DWs in AFMs remains challenging, the fast motion of DWs with velocities around 1500 m/s has been demonstrated in metallic FIMs. The velocity of DWs in metallic FIMs is, however, suppres…
