Temperature-dependent resistivity and magnetoresistance are measured in bulk tetragonal phase of antiferromagnetic CuMnAs and the latter is found to be anisotropic both due to structure and magnetic order. We compare these findings to model calculations with chemical disorder and finite-temperature phenomena included. The finite-temperature ab initio calculations are based on the alloy analogy model implemented within the coherent potential approximation and the results are in fair agreement with experimental data. Regarding the anisotropic magnetoresistance (AMR) which reaches a modest magnitude of 0.12%, we phenomenologically employ the Stoner-Wohlfarth model to identify temperature-dependent magnetic anisotropy of our samples and conclude that the field-dependence of AMR is more similar to that of antiferromagnets than ferromagnets, suggesting that the origin of AMR is not related to isolated Mn magnetic moments.
The effect of Cu substitution on the stability of the CuMnAs tetragonal phase was studied both experimentally and by ab initio calculations. Polycrystalline samples with various compositions Cu$_{1+x}$Mn$_{1-x}$As $(x = 0 - 0.5)$ were synthetized. The tetragonal phase of CuMnAs is found to be stabilized by substituting Mn by Cu in the amount of $x$ ~ 0.1 or higher. This observation is supported by ab initio calculations of the total energy of the tetragonal and orthorhombic phases; with increasing Cu content the tetragonal phase is favoured. Small variations of composition thus allow to grow s…
The antiferromagnetic (AFM) CuMnAs alloy with tetragonal structure is a promising material for the AFM spintronics. The resistivity measurements indicate the presence of defects about whose types and concentrations is more speculated as known. We confirmed vacancies on Mn or Cu sublattices and Mn$_{\rm Cu}$ and Cu$_{\rm Mn}$ antisites as most probable defects in CuMnAs by our new ab initio total energy calculations. We have estimated resistivities of possible defect types as well as resistivities of samples for which the X-ray structural analysis is available. In the latter case we have found …
Tetragonal CuMnAs was the first antiferromagnet where reorientation of the Néel vector was reported to occur by an inverse spin galvanic effect. A complicating factor in the formation of phase-pure tetragonal CuMnAs is the formation of an orthorhombic phase with nearly the same stoichiometry. Pure-phase tetragonal CuMnAs has been reported to require an excess of Cu to maintain a single phase in traditional solid state synthesis reactions. Here we show that subtle differences in diffraction patterns signal pervasive inhomogeneity and phase separation, even in Cu-rich Cu$_{1.18}$Mn$_{0.82}$As. F…
Electronic, magnetic, and transport properties of the antiferromagnetic (AFM) CuMnAs alloy with tetragonal structure, promising for the AFM spintronics, are studied from first principles using the Vienna ab-initio simulation package. We investigate the site-occupation of sublattices and the lattice parameters of three competing phases. We analyze the factors that determine which of the three conceivable structures will prevail. We then estimate formation energies of possible defects for the experimentally prepared lattice structure. Mn$_{\rm Cu}$- and Cu$_{\rm Mn}$-antisites as well as Mn$\lef…
Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-resolved photoemission spectroscopy (ARPES) are reported, including Fermi surfaces (FS) and energy-wavevector dispersions. After correcting for a chemical potential shift of $\approx-390$ meV (hole doping), there is excellent agreement of FS, orbital character of bands, and Fermi velocities between the experiment and density functional theory calcul…
Detecting the orientation of the Néel vector is a major research topic in antiferromagnetic spintronics. Here we recognize the intrinsic nonlinear Hall effect, which is independent of the relaxation time, as a prominent contribution to the time-reversal-odd second order conductivity and can be used to detect the flipping of the Néel vector. In contrast, the Berry-curvature-dipole-induced nonlinear Hall effect depends linear on relaxation time and is time-reversal-even. We study the intrinsic nonlinear Hall effect in an antiferromagnetic metal: tetragonal CuMnAs, and show that its nonlinear Hal…
Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal variant of CuMnAs was shown to be electrically switchable by this intrinsic spin-orbit effect and its use in memory cells with memristive properties has been recently demonstrated for high-quality films gro…
Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave functions) which has so far been tested only to a limited extent. We show that AC permittivity (obtained from ellipsometry) and UV photoelectron spectra agree with density functional calculations. Tog…
We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching.
The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic MRAM. CuMnAs is one promising AF material that exhibits such electrical switching ability, and has been studied to switch using electrical pulses of length millisecond down to picosecond, but with little focus on nanosecond regime. We demonstrate here switching of CuMnAs/GaP using nanosecond pulses. Our results showed that in the nanosecond regime low-energy switchi…
Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $\sim$ 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field. These properties of the switched state are discussed in the…
We report the single-crystal growth and characterization of a new hexagonal phase, Cu$_{0.82}$Mn$_{1.18}$As, in the Cu-Mn-As system. This compound contains the same square-pyramidal MnAs$_5$ units as the tetragonal and orthorhombic polymorphs of CuMnAs. Calorimetry, magnetometry, and neutron diffraction measurements reveal antiferromagnetic ordering at 270 K. The magnetic structure consists of a triangular arrangement of spins in the $ab$ plane. Hexagonal Cu$_{0.82}$Mn$_{1.18}$As shows resistivity that varies only weakly from 5 K to 300 K, and is many times higher than tetragonal CuMnAs, indic…
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic line…
Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find utility in fields ranging from magnetic memories to optical signal processing. However, the absence of a net magnetic moment and the ultra-short magnetization dynamics timescales make antiferromagnets …
Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have demonstrated giant resistive switching signals in single-layer antiferromagnetic films together with analog switching and relaxation characteristics relevant for neuromorphic computing. Here we report simultaneous electrical pulsing and scanning NV magnetometry of antiferromagnetic domains in CuMnAs performed using a pump-probe scheme. We observe a nano-scale frag…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching of a polycrystalline, metallic antiferromagnet with low anisotropy and high Néel temperature. We demonstrate the switching in a Ta / MnN / Pt trilayer system, deposited by (reactive) magnetron sputtering. The dependence of switching amplitude, efficiency, and relaxation are studied with respect to the MnN film thickness, sample temperature, and current densit…
Noncollinear magnetic moments in antiferromagnets (AFM) lead to a complex behavior of electrical transport, even to a decreasing resistivity due to an increasing temperature. Proper treatment of such phenomena is required for understanding AFM systems at finite temperatures; however first-principles description of these effects is complicated. With ab initio techniques, we investigate three models of spin fluctuations (magnons) influencing the transport in AFM CuMnAs; the models are numerically feasible and easily implementable to other studies. We numerically justified a fully relativistic co…
The tetragonal phase of chromium (III) oxide, although unstable in the bulk, can be synthesized in epitaxial heterostructures. The theoretical investigation by density functional theory predicts an antiferromagnetic ground state for this compound. We demonstrate experimentally antiferromagnetism up to 40 K in ultrathin films of t-Cr2O3 by electrical measurements exploiting interface effect within a neighboring ultrathin Pt layer. We show that magnetotransport in Pt is affected by both spin-Hall magnetoresistance and magnetic proximity effect while we exclude any role of magnetism for the low-t…
Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plane current pulses were used to induce 90 degree rotations of antiferromagnetic domains and demonstrate the operation of all-electrical memory bits in a multi-terminal geometry . Here, we demonstrate th…
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) bilayers via the spin Hall effect in the HM and/or the Rashba effect at the interfaces provides an efficient way to switch the magnetization. In the meantime, current induced SOT has also been used to switch the in-plane magnetization in single layers such as ferromagnetic semiconductor (Ga,Mn)As and antiferromagnetic metal CuMnAs with global…
Nonlinear Magnetic Orbital Hall Effect Induced by Spin-Orbit Coupling
Singapore University of Technology and Design（新加坡科技设计大学）；Beihang University（北京航空航天大学）；Yanshan University（燕山大学）；Fudan University（复旦大学）；Lanzhou University（兰州大学）；The Hong Kong Polytechnic University（香港理工大学）
Halide perovskite (HaP) semiconductors are revolutionizing photovoltaic (PV) solar energy conversion by showing remarkable performance of solar cells made with esp. tetragonal methylammonium lead tri-iodide (MAPbI3). In particular, the low voltage loss of these cells implies a remarkably low recombination rate of photogenerated carriers. It was suggested that low recombination can be due to spatial separation of electrons and holes, a possibility if MAPbI3 is a semiconducting ferroelectric, which, however, requires clear experimental evidence. As a first step we show that, in operando, MAPbI3 …
Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of these textures, which have gained significant attention because of their potential for terahertz dynamics, deflection free motion, and improved size scaling due to the absence of stray field. Here we sho…
Magnetic and transport properties of tetragonal- or cubic-Heusler-type Co-substituted Mn-Ga epitaxial thin films
研究了外延生长的Mn-Co-Ga薄膜的结构、磁性和输运性质与组分的关系。随着Co含量的增加，晶体结构从四方晶系变为立方晶系。在饱和磁化强度对Co含量的依赖性方面，对于Mn $_{2.3}$ Co $_{0.4}$ Ga $_{1.3}$膜，在9.2 Merg/cm $^3$的大{ \it K} $_\textrm u$值处获得相对小的值。Mn-Co-Ga薄膜的电阻率比纯Mn-Ga薄膜的电阻率大。对于Mn $_{2.2}$ Co $_{0.6}$ Ga $_{1.2}$膜，电阻率的最大值为490 $μΩ$ cm。Mn-Co-Ga的高电阻率可能是由于Co替代引起的化学无序在膜中存在局域电子态。
NdFeO3 modified polycrystalline ceramics with composition (NdFeO3)0.1-(Ba0.7Sr0.3TiO3)0.9 (NFBST) ceramics have been synthesized via solid-state reaction route. The Rietveld refinement of the XRD data confirmed the existence of a tetragonal phase (P4mm) and a hexagonal phase (P63/mmc) in the prepared sample. The coexistence of phases has been also further confirmed from the Raman spectroscopy. The SEM image revealed dense microstructure with well packed grains of different sizes. At room temperature lossy P-E loop and weak ferromagnetism is observed in NFBST system. Complex impedance spectrosc…
We investigated structural, magnetic and electrical properties of sputter deposited Mn-Fe-Ga compounds. The crystallinity of the Mn-Fe-Ga thin films was confirmed using x-ray diffraction. X-ray reflection and atomic force microscopy measurements were utilized to investigate the surface properties, roughness, thickness and density of the deposited Mn-Fe-Ga. Depending on the stoichiometry, as well as the used substrates (SrTiO3 (001) and MgO (001)) or buffer layer (TiN) the Mn-Fe-Ga crystallizes in the cubic or the tetragonally distorted phase. Anomalous Hall effect and alternating gradient magn…
Pulsed laser deposition, a non-equilibrium thin-film growth technique, was used to stabilize metastable tetragonal iron sulfide (FeS), the bulk state of which is known as a superconductor with a critical temperature of 4 K. Comprehensive experiments revealed four important factors to stabilize tetragonal FeS epitaxial thin films: (i) an optimum growth temperature of 300 °C followed by thermal quenching, (ii) an optimum growth rate of ~7 nm/min, (iii) use of a high-purity bulk target, and (iv) use of a single-crystal substrate with small in-plane lattice mismatch (CaF2). Electrical resistivity …
While the tetragonal antiferro-electrically distorted (AFD) phase with space group $I4/mcm$ is well known for SrTiO$_3$ to occur below 105 K, there are also some hints in literature of an orthorhombic phase, either at lower temperature at high pressure. A previously proposed orthorhombic layered structure of SrTiO$_3$, known as the post-perovskite or CaIrO$_3$ structure with space group $Cmcm$ is shown to have significantly higher energy than the cubic or tetragonal phase and to have its minimum volume at larger volume than cubic perovskite. It thus cannot correspond to a high-pressure phase o…
We investigated the pressure evolution of the electrical transport in the almost compensated Weyl semimetal TaP. In addition, we obtained information on the modifications of the Fermi-surface topology with pressure from the analysis of pronounced Shubnikov-de Haas (SdH) quantum oscillations present in the Hall-effect and magnetoresistance data. The simultaneous analysis of the Hall and longitudinal conductivity data in a two-band model revealed an only weak decrease in the electron- and hole charge-carrier densities up to 1.2 GPa, while the mobilities are essentially pressure independent along…
Understanding the intrinsic charge transport in organolead halide perovskites is essential for the development of high-efficiency photovoltaics and other optoelectronic devices. Despite the rapid advancement of the organolead halide perovskite in photovoltaic and optoelectronic applications, the intrinsic charge carrier transport in these materials remains elusive partly due to the difficulty of fabricating electrical devices and obtaining good electrical contact. Here, we report the fabrication of organolead halide perovskite microplates with monolayer graphene as low barrier electrical conta…
PbTiO3 has the highest tetragonal distortion (c/a=1.064) and highest spontaneous polarization among perovskite titanates. But, it is hazardous and hence one needs to reduce Pb content by substituting or reducing Pb content for use in applications. Pb(1-x)(K0.5Sm0.5)xTiO3 (0&x&0.5) perovskite powders were synthesized by sol-gel process, where Pb2+ was replaced by a combination of K+10.5Sm+30.5 (equivalent charge and comparable ionic radius) providing an excellent substitution model to study changes in structural and electrical properties. Vibrational properties and dielectric properties are mod…
Stabilization of an ambient pressure, collapsed tetragonal phase in CaFe2As2 and tuning of the orthorhombic / antiferromagnetic transition temperature by over 70 K by control of nano-precipitates
Alternative origins of polarity in compressively strained SrTiO3-RENiO3 capacitors
University College London（伦敦大学学院）；London Centre for Nanotechnology（伦敦纳米技术中心）；Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza（阿拉贡纳米科学与材料研究所（INMA），西班牙科学研究中心-萨拉戈萨大学）；Departamento de Física de la Materia Condensada, Universidad de Zaragoza（萨拉戈萨大学凝聚态物理系）；Condensed Matter Physics, Physics Department, Durham University（杜伦大学物理系凝聚态物理）；Smart Materials Unit, Luxembourg Institute of Science and Technology (LIST)（卢森堡科学与技术研究所（LIST）智能材料部门）；Department of Physics and Materials Science, University of Luxembourg（卢森堡大学物理与材料科学系）；Departamento de Ciencia y Tecnologia de Materiales y Fluidos, Universidad de Zaragoza（萨拉戈萨大学材料与流体科学技术系）
Although a cubic phase of Mn$_3$Ga with an antiferromagnetic order has been theoretically predicted, it has not been experimentally verified in a bulk or film form. Here, we report the structural, magnetic, and electrical properties of antiferromagnetic cubic Mn$_3$Ga (C-Mn$_3$Ga) thin films, in comparison with ferrimagnetic tetragonal Mn$_3$Ga (T-Mn3Ga). The structural analyses reveal that C-Mn$_3$Ga is hetero-epitaxially grown on MgO substrate with the Cu$_3$Au-type cubic structure, which transforms to T-Mn$_3$Ga as the RF sputtering power increases. The magnetic and magnetotransport data sh…
We have performed X-ray powder diffraction, magnetization, electrical resistivity, heat capacity and inelastic neutron scattering (INS) to investigate the physical properties of the intermetallic series of compounds CeCuBi$_{2-x}$Sb$_{x}$. These compounds crystallize in a tetragonal structure with space group $P4/nmm$ and present antiferromagnetic transition temperatures ranging from 3.6 K to 16 K. Remarkably, the magnetization easy axis changes along the series, which is closely related to the variations of the tetragonal crystalline electric field (CEF) parameters. This evolution was analyze…
Synthesis, Structure and Properties of Tetragonal Sr2M3As2O2 (M3 = Mn3, Mn2Cu and MnZn2) Compounds Containing Alternating CuO2-Type and FeAs-Type Layers
The spin Hall effect (SHE) and the magnetic spin Hall effect (MSHE) are responsible for electrical spin current generation, which is a key concept of modern spintronics. We theoretically investigated the spin conductivity induced by spin-dependent s-d scattering in a ferromagnetic 3d alloy model by employing microscopic transport theory based on the Kubo formula. We derived a novel extrinsic mechanism that contributes to both the SHE and MSHE. This mechanism can be understood as the contribution from anisotropic (spatial-dependent) spin-flip scattering due to the combination of the orbital-dep…
In this paper, nominal compositions of NdFeAsO0.8F0.2, NdFeAs0.95Sb0.05O0.8F0.2 and NdFeAs0.95P0.05O0.8F0.2 were prepared by one step solid state reaction method. The structural, electrical and morphological properties of samples were characterized through the XRD pattern, the 4 probe method and SEM, respectively. The crystal structure of our samples was tetragonal with P4/nmm:2 symmetry group. Also, the (x, y, z) and occupancy of ions and lattice parameters were changed by isovalent substitution of Phosphorus P and Antimony Sb in the NdFeAsO0.8F0.2 sample. The alfa and beta bond angles and Fe…
A suite measurements of the electrical, thermal, and vibrational properties are conducted on palladium sulfide (PdS) in order to investigate its thermoelectric performance. The tetragonal structure with the space group $P$42/$m$ for PdS is determined from X-ray diffraction measurement. The unique temperature dependence of mobility suggests that acoustic phonons and ion impurity scattering are two dominant scattering mechanisms within the compound. The obtained power factor of $27$ $μ$Wcm$^{-1}$K$^{-2}$ at 800 K is the largest value in the remaining transition-metal sulfides studied so far. The…
