In this work an overall electronic structure including the position and formation energies of various intrinsic defects are computed for anatase using Density Functional Theory aided by Hubbard correction (DFT+U). The intrinsic point defects considered here are, oxygen vacancy ($V_O$), oxygen interstitial ($O_i$), titanium vacancy ($V_{Ti}$) and titanium interstitial ($Ti_i$). Out of all the intrinsic defects considered here, $V_{Ti}$ and $Ti_i$ are found to be most stable under equilibrium condition. Whereas, conduction band in anatase is consisted of mainly Ti 3d with a minor component of O 2p states, valence band is found to be mainly composed of O 2p with a minor contribution from Ti 3d states. $V_O$ and $Ti_i$ are found to form localized states in the band gap. Moreover, anisotropy in the effective mass is seen. Finally, an alignment of band diagrams for all the intrinsic defect states is performed using vacuum potential from slab-supercell calculation as reference. This first principle study would help in the understanding of defect-induced insulating to conducting transition in anatase, which would have significant impact in the photocatalytic and optoelectronic area.
Understanding native point defects is fundamental in order to comprehend the properties of TiO$_2$ anatase in technological applications. Several first-principles studies have been performed in order to investigate the defect chemistry of this material. The reported values are, however, scattered over a wide range. In this manuscript we perform a comparative study employing different approaches based on semilocal, DFT+$U$ and screened hybrid functionals in order to investigate the dependence of defect properties, such as formation energies and charge transition levels, on the employed computat…
The efforts in the optimization of the physical and chemical properties related to the photocatalytic efficiency of TiO2 nanoparticles relies mainly on defect engineering strategies, been the structural and the doping the most common ones. The doping of the anatase TiO2 structure with lanthanides elements potentially can turns the TiO2 optical absorption into the visible range increasing drastically its photocatalytic efficiency. Here we show that the processing of TiO2 nanoparticles in oxygen atmosphere and the La doping stabilizes the anatase phase. The La incorporation takes place mainly in…
In this study we report on the results from emission $^{57}$Fe M${ö}$ssbauer Spectroscopy experiments, using dilute $^{57}$Mn implantation into pristine (TiO$_2$) and hydrogenated anatase held at temperatures between 300-700 K. Results of the electronic structure and local environment are complemented with ab-initio calculations. Upon implantation both Fe$^{2+}$ and Fe$^{3+}$ are observed in pristine anatase, where the latter demonstrates the spin-lattice relaxation. The spectra obtained for hydrogenated anatase show no Fe$^{3+}$ contribution, suggesting that hydrogen acts as a donor. Due to t…
Titanium dioxide materials have been studied intensively and extensively due to photocatalytic applications. A long-standing open question is the energy band alignment of rutile and anatase TiO2 phases, which can affect the photocatalytic process in the composite system. There are basically two contradictory viewpoints about the alignment of these two TiO2 phases supported by respective experiments: 1) straddling type and 2) staggered type. In this work, our DFT plus U calculations find that the perfect rutile (110) and anatase (101) surfaces have the straddling type band alignment, whereas th…
We systematically investigated native defects and reconstructions of TiO2 anatase (101) using USPEX and VASP codes. For lightly reduced samples, the coverage of O vacancies at surface depends on its concentration in bulk, while Ti interstitials prefer to dissolve in bulk. Atomic configurations of reconstructed TiO2 anatase (101) structures were given for severe reduced samples at the first time. Increasing the reduction degree, the Fermi level can be modulated in the whole bandgap. For O-rich samples, due to the indirect-to-direct bandgap transition and bandgap narrowing, O interstitials are r…
We investigate the role of transition metal atoms of group V-b (V, Nb, and Ta) and VI-b (Cr, Mo, and W) as n- or p-type dopants in anatase TiO2 using thermodynamic principles and density functional theory with the Heyd-Scuseria-Ernzerhof HSE06 hybrid functional. The HSE06 functional provides a realistic value for the band gap, which ensures a correct classification of dopants as shallow or deep donors or acceptors. Defect formation energies and thermodynamic transition levels are calculated taking into account the constraints imposed by the stability of TiO2 and the solubility limit of the imp…
Anatase is a metastable polymorph of TiO$_2$. In contrast to the more widely-studied TiO$_2$ rutile, O vacancies (V$_\mathrm O$'s) are not stable at the anatase (101) surface. Low-temperature STM shows that surface V$_\mathrm O$'s, created by electron bombardment at 105 K, start migrating to subsurface sites at temperatures $\geq$ 200 K. After an initial decrease of the V$_\mathrm O$ density, a temperature-dependent dynamic equilibrium is established where V$_\mathrm O$'s move to subsurface sites and back again, as seen in time-lapse STM images. We estimate that activation energies for subsurf…
In this work, electronic structure of several doped TiO$_2$ anatase systems is computed using DFT+$U$. Effective masses of charge carriers are also computed to quantify how the dopant atoms perturb the bands of the host anatase material. $U$ is computed systematically for all the dopants using the linear response method rather than using fitting procedures to physically known quantities. A combination of $d$ and $f$ block elements (Nb, Ta, V, Mo, W, Cr, La, Cu, Co and Ce) are considered as dopants. Depending upon the energies of their outer $d$ or $f$ electrons, the dopants are found to form d…
Interface of transition metal dichalcogenide (TMDC) and high-k dielectric transition metal oxides (TMO) had triggerred umpteen discourses due to the indubitable impact of TMO in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different techniques. Here, on a pulsed laser deposited (PLD) MoS2 thin film, a layer of TiO2 is grown by using both atomic layer deposition (ALD) and PLD. These two different techniques emanate TiO2 layers with…
Interfacial water on transition metal oxides such as TiO$_2$ has been widely studied because of their structural complexity and scientific relevance in e.g. photocatalysis and ice growth. Using ab initio molecular dynamics, we find that interfacial water on anatase (101) surface features an unconventional fluxional structure with reduced contact layer density. The density reduction and flexibility of interfacial water are induced by oxygen vacancy defects deeply located in the subsurface. Our study proposes a fresh perspective of the anatase/water interface, raising the importance of non-trivi…
TiO$_2$ and SrTiO$_3$ are well known materials in the field of photocatalysis due to their exceptional electronic structure, high chemical stability, non-toxicity and low cost. However, owing to the wide band gap, these can be utilized only in the UV region. Thus, it's necessary to expand their optical response in visible region by reducing their band gap through doping with metals, nonmetals or the combination of different elements, while retaining intact the photocatalytic efficiency. We report here, the codoping of a metal and a nonmetal in anatase TiO$_2$ and SrTiO$_3$ for efficient photoc…
Anatase TiO2 is an indirect band-gap material with large degree of sub-stoichiometry, selective excitation of its native defect reveals polychromatic emission in blue, green and red spectral regions due to self trapped excitons and singlet-singlet transition of defect states. Electron spin resonance measurement in dark shows presence of isolated Ti+3, deep lying, and surface lying VO at 1.986, 2.04 and 2.023 g values respectively, whereas , on exposure with visible light in situ ESR measurement reveals the formation of defect complex of Ti+3-VO and Ti+4-V+O.
"Black" TiO2 has gained increasing interest because of its outstanding properties and promising applications in a wide range of fields. Among the outstanding features of the material is that certain synthesis processes lead to the formation of an intrinsic co-catalytic center and thus enable noble-metal free photocatalytic H2 generation. In this work, we report "grey TiO2" by an appropriate hydrogenation treatment exhibits excellent photocatalytic hydrogen. In this case, by the employment of thermally stable and high-surface-area TiO2 nanoparticles as well as mesoporous particles as the hydrog…
This topical review focuses on the recently active debate on the band alignment between two polymorphs of TiO$_2$, rutile and anatase. A summary is given to the popular methods for measurement and calculation of band alignment between materials. We point out, through examination of recently experimental and theoretical reports, that the outstanding discrepancy in the band alignment between two TiO$_2$ phases is attributed to factors that influence band alignment rather than needs a definite answer of which band alignment is right. According to an important factor, the presence of an interface,…
We investigate the behavior of oxygen vacancies in three different metal-oxide semiconductors (rutile and anatase TiO2, monoclinic WO3, and tetragonal ZrO2) using a recently proposed hybrid density-functional method in which the fraction of exact exchange is material-dependent but obtained ab initio in a self-consistent scheme. In particular, we calculate charge-transition levels relative to the oxygen-vacancy defect and compare computed optical and thermal excitation/emission energies with the available experimental results, shedding light on the underlying excitation mechanisms and related m…
Density functional theory (DFT) has become a standard tool for the study of point defects in materials. However, finding the most stable defective structures remains a very challenging task as it involves the solution of a multimodal optimization problem with a high-dimensional objective function. Hitherto, the approaches most commonly used to tackle this problem have been mostly empirical, heuristic and/or based on domain knowledge. In this contribution, we describe an approach for exploring the potential energy surface based on the covariance matrix adaption evolution strategy (CMA-ES) and s…
Here we present a study of magnetism in \CTO\ anatase films grown by pulsed laser deposition under a variety of oxygen partial pressures and deposition rates. Energy-dispersive spectrometry and transition electron microscopy analyses indicate that a high deposition rate leads to a homogeneous microstructure, while very low rate or postannealing results in cobalt clustering. Depth resolved low-energy muon spin rotation experiments show that films grown at a low oxygen partial pressure ($\approx 10^{-6}$ torr) with a uniform structure are fully magnetic, indicating intrinsic ferromagnetism. Firs…
We present a detailed first principles density functional theory study of intrinsic and extrinsic point defects in monolayer (ML) WSe2. Among the intrinsic point defects, Se vacancies (Sevac) have the lowest formation energy (disregarding Se adatoms that can be removed with annealing). The defects with the next smallest formation energies (at least 1 eV larger) are SeW (Se substituting W atoms in an antisite defect), Wvac (W vacancies) and 2Sevac (Se divacancies). All these intrinsic defects have gap states that are not spin-polarized. The presence of a graphite substrate does not change the f…
Oxygen vacancies are ubiquitous in TiO$_2$ and play key roles in catalysis and magnetism applications.Despite being extensively investigated, the electronic structure of oxygen vacancies in TiO$_2$ remains controversial both experimentally and theoretically.Here we report a study of a neutral oxygen vacancy in TiO$_2$ using state-of-the-art quantum chemical electronic structure methods.We find that the ground state is a color center singlet state in both the rutile and the anatase phase of TiO$_2$. Specifically, embedded CCSD(T) calculations find, for an oxygen vacancy in rutile, that the lowe…
The diffusion of Li in electrode materials is key factor to charging/discharging rate capacity of Li-ion battery (LIB). Recently, two-dimensional phosphorene has been proposed as a very promising electrode material due to its ultrafast and directional lithium diffusion, as well as large energy capacity. Here, on the basis of density functional theory, we report that the intrinsic point defects, including vacancy and stone-wales defects, will block the directional ultrafast diffusion of lithium in phosphorene. On the defect-free phosphorene, diffusion of Li along the zigzag lattice direction is…
The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of optoelectronic applications. Here, we report hybrid density functional theory based calculations of the properties of intrinsic point defects in the two systems, including spin orbit coupling effects, which influence strongly their band structures. With the hybrid DFT approach we adopt, we obtain excellent agreement between our calculated band dispersions, structural, elastic and vibrational properties and available measurements. We compute point defect formati…
Despite being the archetypal thermoelectric material, still today some of the most exciting advances in the efficiency of these materials are being achieved by tuning the properties of PbTe. Its inherently low lattice thermal conductivity can be lowered to its fundamental limit by designing a structure capable of scattering phonons over a wide range of length scales. Intrinsic defects, such as vacancies or grain boundaries, can and do play the role of these scattering sites. Here we assess the effect of these defects by means of molecular dynamics simulations. For this we purposely parametrize…
We use density functional theory to study intrinsic defects and oxygen related defects in indium selenide. We find that ${InSe}$ is prone to oxidation, but however not reacting with oxygen as strongly as phosphorene. The dominant intrinsic defects in ${In}$-rich material are the ${In}$ interstitial, a shallow donor, and the ${Se}$ vacancy, which introduces deep traps. The latter can be passivated by oxygen, which is isoelectronic with ${Se}$. The dominant intrinsic defects in ${Se}$-rich material have comparatively higher formation energies.
We have investigated the magnetic damping of precessional spin dynamics in defect-controlled epitaxial grown Fe$_3$O$_4$(111)/Yttria-stabilized Zirconia (YSZ) nanoscale films by all-optical pump-probe measurements. The intrinsic damping constant of the defect-free Fe$_3$O$_4$ film is found to be strikingly larger than that of the as-grown Fe$_3$O$_4$ film with structural defects. We demonstrate that the population of the first-order perpendicular standing spin wave (PSSW) mode, which is exclusively observed in the defect-free film under sufficiently high external magnetic fields, leads to the …
Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping
采用分子束外延技术在石墨烯衬底上制备了高质量的Sb 2 Te 3薄膜，并利用原位扫描隧道显微镜/光谱仪对薄膜进行了研究。与第一性原理计算一致，确定了Sb 2 Te 3的本征缺陷是Sb空位和SbTe反位.通过最小化缺陷密度，再加上石墨烯衬底的转移掺杂，可以在体带隙的整个范围内调谐Sb 2 Te 3薄膜的费米能级。这为研究拓扑绝缘体在Dirac点附近的行为提供了必要条件。
MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only cause bulk metallic conductivity, preventing the measurement of quantum transport in surface states, but may also affect magnetism and topological properties. In this paper, we show by density functional theory calculations that the strain induced by the internal heterostructure promotes the formation of large-size-mismatched antisite defect BiMn in MnBi2Te4…
Defects in halide perovskites play an essential role in determining the efficiency and stability of the resulting optoelectronic devices. Here, we present a systematic study of intrinsic point defects in six primary metal halide perovskites, MAPbI$_3$, MAPbBr$_3$, MAPbCl$_3$, FAPbI$_3$, CsPbI$_3$ and MASnI$_3$, using density functional theory calculations with the SCAN+rVV10 functional. We analyse the impact of changing anions and cations on the defect formation energies and the charge state transitions levels and identify the physical origins underlying the observed trends. Dominant defects i…
Recent experimental observations indicate that bulk $Sc_2O_3$ (~200 nm thick), an insulator at room temperature and pressure, must act as a good electronic conductor during thermionic cathode operation, leading to the observed high emitted current densities and overall superior emission properties over conventional thermionic emitters which do not contain $Sc_2O_3$. Here, we employ ab initio methods using both semilocal and hybrid functionals to calculate the intrinsic defect energetics of Sc and O vacancies and interstitials and their effects on the electronic properties of $Sc_2O_3$ in an ef…
Black phosphorus is a monoatomic semiconducting layered material that degrades exothermically in the presence of light and ambient contaminants. Its degradation dynamics remain largely unknown. Even before degradation, local-probe studies indicate non-negligible local curvature --through a non-constant height distribution-- due to the unavoidable presence of intrinsic defects. We establish that these intrinsic defects are photo-oxidation sites because they lower the chemisorption barrier of ideal black phosphorus (> 10 eV and out of visible-range light excitations) right into the visible and u…
Studying the atomic structure of intrinsic defects in two-dimensional transition metal dichalcogenides is difficult since they damage quickly under the intense electron irradiation in transmission electron microscopy (TEM). However, this can also lead to insights into the creation of defects and their atom-scale dynamics. We first show that MoTe 2 monolayers without protection indeed quickly degrade during scanning TEM (STEM) imaging, and discuss the observed atomic-level dynamics, including a transformation from the 1H phase into 1T', three-fold rotationally symmetric defects, and the migrati…
Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and nanoscale potential fluctuation in single crystals of archetypal topological insulator Bi2Se3. Here it is established that the defect concentrations in Bi2Se3 are far above the thermodynamic limit, and that the growth kinetics dominate the observed defect concentrations. Furthermore, through careful control of the synthesis, our tunneling spectroscopy suggests…
We report thermoelectric power experiments in e-doped thin films of SrTiO$_3$ (STO) which demonstrate that the electronic band degeneracy can be lifted through defect management during growth. We show that even small amounts of cationic vacancies, combined with epitaxial stress, produce a homogeneous tetragonal distortion of the films, resulting in a Kondo-like resistance upturn at low temperature, large anisotropic magnetoresistance, and non-linear Hall effect. Ab-initio calculations confirm a different occupation of each band depending on the degree of tetragonal distortion. The phenomenolog…
采用第一性原理LDA/LDA $+U$方法研究了Li掺杂SnO $_{2}$的磁性和电子结构.我们发现，锂诱导磁性的SnO $_{2}$时，掺杂在Sn网站，但成为非磁性时，掺杂在O和间隙网站。计算的形成能表明，锂更喜欢的Sn网站相比，O网站，与以前的实验工作。研究了Li与本征缺陷（Sn V $_\mathrm{Sn}$和O V $_\mathrm{O}$空位）的相互作用，发现Li不仅具有自旋极化作用，而且具有空位稳定作用，即Li显著降低了本征缺陷的缺陷形成能，有助于磁氧空位的稳定.电子态密度表明，这些系统，费米能级接触导（价）带，是非磁性（磁性）。癌症。电子态密度表明，费米能级接触导（价）带的那些系统是非磁性的（磁性的）。
Domain Walls Stabilized by Intrinsic Phonon Modes and Engineered Defects Enable Robust Ferroelectricity in HfO2
School of Integrated Circuits, Peking University（北京大学集成电路学院）；Advanced Instrumental Analysis Center, School of Chemical Engineering and Technology, Tianjin University（天津大学化学工程与技术学院先进仪器分析中心）
Combined in-situ x-ray photoemission spectroscopy, scanning tunnelling spectroscopy and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counter doping. We observe that the surface morphology and electronic band structure of Bi2Te3 are not affected by in-vacuo storage and exposure to oxygen, whereas major changes are observe…
The electronic structure and half-metallic gap of Co$_{2}$MnSi in the presence of crystallographic defects, partial Fe substitution for Mn, and thermal spin fluctuations are studied using the coherent potential approximation and the disordered local moment method. In the presence of 5\% Co or Mn vacancies the Fermi level shifts down to the minority-spin valence-band maximum. In contrast to NiMnSb, both types of Mn antisite defects in Co$_{2}$MnSi are strongly exchange-coupled to the host magnetization, and thermal spin fluctuations do not strongly affect the half-metallic gap. Partial substitu…
Intrinsic Defects in Amorphous Optical Coatings of TiO$_2$-doped GeO$_2$ for Gravitational-wave Detectors
Kennesaw State University（肯尼索州立大学）；Sungkyunkwan University（成均馆大学）；Stanford University（斯坦福大学）；Colorado State University（科罗拉多州立大学）；Ohio University（俄亥俄大学）；California Institute of Technology（加州理工学院）
