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arXiv 1009.0465cond-mat.mtrl-sci
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锑化铝中的本征点缺陷

Intrinsic point defects in aluminum antimonide

Daniel Åberg, Paul Erhart, Andrew J. Williamson, Vincenzo Lordi

摘要:

采用基于局域密度近似的密度泛函理论计算了锑化铝中本征点缺陷的性质。特别注意解决有限尺寸效应,带隙误差,和对称性减少的缺陷结构。带隙的校正基于一组GW计算。最重要的缺陷被确定为铝间隙$Al_{i,Al}^{1+}$、锑反位$Sb_{Al}^0$和$Sb_{Al}^{1+}$以及铝空位$V_{Al}^{3-}$。通过自洽求解电中性方程,计算了无杂质材料中的本征缺陷和载流子浓度。无杂质的材料被发现是n型导电在有限的温度。

英文摘要:

Calculations within density functional theory on the basis of the local density approximation are carried out to study the properties of intrinsic point defects in aluminum antimonide. Special care is taken to address finite-size effects, band gap error, and symmetry reduction in the defect structures. The correction of the band gap is based on a set of GW calculations. The most important defects are identified to be the aluminum interstitial $Al_{i,Al}^{1+}$, the antimony antisites $Sb_{Al}^0$ and $Sb_{Al}^{1+}$, and the aluminum vacancy $V_{Al}^{3-}$. The intrinsic defect and charge carrier concentrations in the impurity-free material are calculated by self-consistently solving the charge neutrality equation. The impurity-free material is found to be n-type conducting at finite temperatures.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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