天然$α$ -石英晶体中铝、碱和贵金属离子杂质的发光
Luminescence of Natural $α$-Quartz Crystal with Aluminum, Alkali and Noble Ions Impurities
摘要：
本文研究了掺铝和碱金属离子的合成和天然（黑云母和黑云母）$α$ -石英晶体的光致发光和热释光。光致发光光谱的特征在于在400 nm（~ 3.1 eV）附近的主蓝光带。相应的发光中心是基于天然和合成石英晶体中含有铝和碱作为补偿剂的缺陷。光致发光可以在700 K以上的高温下检测到。热猝灭激活能为0.15 eV，频率因子为3 × 10 $^7$ s $^{-1}$ .在含银离子的样品中，主发光带位于~ 260 nm（~ 4.7 eV），时间常数为~ 37 $μ$ s（80 K）;在含铜离子的样品中，主发光带位于~ 360 nm（~ 3.4 eV），时间常数为~ 50 μs（80 K）。对于与银相关的发光，热猝灭的能量为0.7 eV，频率系数为110 $^{14}$·s $^{-1}$，对于与铜相关的发光，这些参数为0.55 eV和10 $^{14}$·s $^{-1}$。含有碱金属离子或贵金属离子的同一缺陷的中心内发光性质的差异是基于电子跃迁的差异。在碱金属离子的情况下，氧和碱金属离子之间的电荷转移跃迁。在贵离子的情况下，吸收发光对应于离子内跃迁。辐射性质与电子在一价离子上的俘获有关。生成的原子从含铝缺陷中移出。孔留在铝氧缺陷上。热释光与原子的释放有关，它与氧上的空穴一起扩散到铝缺陷中，并发生辐射复合。
英文摘要：
Photoluminescence and thermally stimulated luminescence of synthetic and natural (morion and smoky) $α$-quartz crystals doped with aluminum and alkali ions were studied. The photoluminescence spectrum is characterized with the main blue band around 400 nm (~ 3.1 eV). The corresponding luminescence center is based on a defect containing aluminum and alkali as compensators in natural and synthetic quartz crystals. Photoluminescence can be detected at high temperatures above 700 K. The thermal quenching activation energy is 0.15 eV and the frequency factor is 3 10$^7$ s$^{-1}$. In the samples with silver ions the main luminescence band is located at ~ 260 nm (~ 4.7 eV) with a time constant of ~ 37 $μ$s at 80 K, and in the samples with copper ions the PL band is at ~ 360 nm (~ 3.4 eV) with a time constant ~ 50 μs at 80 K. For luminescence associated with silver the energy of thermal quenching is 0.7 eV with a frequency coefficient of 1 10$^{14}$ s$^{-1}$, and for the luminescence related to copper, these parameters are 0.55 eV and 10$^{14}$ s$^{-1}$. The differences in intra-center luminescence properties of the same defect containing alkali ions or noble ions are based on differences in electronic transitions. In the case of alkali ions the charge transfer transitions between oxygen and alkali ions. In the case of noble ions absorption-luminescence corresponds to intra ion transitions. Radiation properties are related to trapping of an electron on one valence ion. Created atom moves out of aluminum containing defect. The hole remains on aluminum-oxygen defect. Thermally stimulated luminescence is related to release of atom, it diffusion to aluminum defect with the hole on oxygen and following radiative recombination.
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