An efficient electro-optical modulation has been demonstrated here by using an edge plasmon mode specific for the hybrid plasmonic waveguide. Our approach addresses a major obstacle of the integrated microwave photonics caused by the polarization constraints of both active and passive components. In addition to sub-wavelength confinement, typical for surface plasmon polaritons, the edge plasmon modes enable exact matching of the polarization requirements for silicon based input/output grating couplers, waveguides and electro-optical modulators. A concept of the hybrid waveguide, implemented in a sandwich-like structure, implies a coupling of propagating plasmon modes with a waveguide mode. The vertically arranged sandwich includes a thin layer of epsilon-near-zero material (indium tin oxide) providing an efficient modulation at small length scales. Employed edge plasmons possess a mixed polarization state and can be excited with horizontally polarized waveguide modes. It allows the resulting modulator to work directly with efficient grating couplers and avoid using bulky and lossy polarization converters. A 3D optical model based on Maxwell equations combined with drift-diffusion semiconductor equations is developed. Numerically heavy computations involving the optimization of materials and geometry have been performed. Effective modes, stationary state field distribution, an extinction coefficient, optical losses and charge transport properties are computed and analyzed. In addition to the polarization matching, the advantages of the proposed model include the compact planar geometry of the silicon waveguide, reduced active electric resistance R and a relatively simple design, attractive for experimental realization.
We investigate a plasmonic electro-optic modulator with an extinction ratio exceeding 1 dB/um by engineering the optical mode to be in-plane with the graphene layer, and show how lowering the operating temperature enables steeper switching. We show how cooling Graphene enables steeping thus improving dynamic energy consumption. Further, we show that multi-layer Graphene integrated with a plasmonic slot waveguide allows for in-plane electric field components, and 3-dB device lengths as short as several hundred nanometers only. Compact modulators approaching electronic length-scales pave a way f…
Using a pair of p- and n-type semiconductors separated by a nanoscale vacuum gap, we introduce an optoelectronics element prototype, "photonic p-n junction", as an analogue of the electronic p-n junction, which is demonstrated to serve as an ideal near-field heat flux modulator. The high modulation performance relies on the switch among three fundamental photon-carrier interaction modes (i.e., surface plasmon polaritons, symmetric depleted internal plasmon polaritons and symmetric accumulated surface plasmon polaritons) caused by the changes in hole and electron densities near the surfaces und…
In this paper, a numerical solution for a plasmonic absorption modulator is presented with a six-layer structure consisting of an air superstrate, a gold layer, a barium titanate layer, a n type silicon layer, a gold layer and a thin-shell nanolattice aluminium oxide substrate. Regarding the suggested structure, the parameters related to the absorption modulation are investigated at different thicknesses. Here, the Pockels effect and the free carrier dispersion effect are considered simultaneously. The dispersion relation of this structure is analytically obtained and numerically solved by the…
Optical modulators are required to have high modulation bandwidths and a compact footprint. In this paper we experimentally demonstrate a novel Si/In$_2$O$_3$ hybrid plasmonic waveguide modulator, which is realized by an asymmetric directional coupler (ADC) consisting of a silicon photonic waveguide and a Si/In$_2$O$_3$ hybrid plasmonic waveguide. The optical signal is modulated by radio-frequency (RF) signal applied on the Au electrodes at the top of MOS capacitor and contacting the In$_2$O$_3$ thin film. The record-high modulation bandwidth of >40 GHz is realized by a silicon-doping-free met…
Modulating the amplitude and phase of light is at the heart of many applications such as wavefront shaping, transformation optics, phased arrays, modulators and sensors. Performing this task with high efficiency and small footprint is a formidable challenge. Metasurfaces and plasmonics are promising , but metals exhibit weak electro-optic effects. Two-dimensional materials, such as graphene, have shown great performance as modulators with small drive voltages. Here we show a graphene plasmonic phase modulator which is capable of tuning the phase between 0 and 2π in situ. With a footprint of 35…
We introduce phase-change material Ge2Sb2Te5 (GST) into metal-insulator-metal (MIM) waveguide systems to realize chipscale plasmonic modulators and switches in the telecommunication band. Benefitting from the high contrast of optical properties between amorphous and crystalline GST, the three proposed structures can act as reconfigurable and non-volatile modulators and switches with excellent modulation depth 14 dB and fast response time in nanosecond, meanwhile possessing small footprints, simple frameworks and easy fabrication. This work provides new solutions to design active devices in MIM…
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power handling and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here we experimentally demonstrate that plasmonic modulators do not trade off any performance parameter, featuring - at the same time - a short length of 10s of micrometers, record-high flat frequency response bey…
In this paper, a numerical solution for a hybrid plasmonic modulator is presented with a six-layer structure consisting of an air superstrate, a gold layer, a barium titanate layer, a n type silicon layer, a gold layer and an Al2O3 nanolattice substrate. Regarding the suggested structure, the parameters related to the phase and the absorption modulation are investigated at different thicknesses. Here, the Pockels effect and the free carrier dispersion effect are considered simultaneously. The dispersion equation of this structure is analytically obtained and numerically solved by the Nelder-Me…
Vanadium dioxide (${\rm VO}_2$) is a phase change material (PCM) that exhibits a large change in complex refractive index on the order of unity upon switching from its dielectric to its metallic phase. Although this property is key for the design of ultracompact optical modulators of only a few microns in footprint, the high absorption of ${\rm VO}_2$ leads to appreciable insertion loss (IL) that limits the modulator performance. In this paper, through theory and numerical modeling, we report on a new paradigm, which demonstrates how the use of a hybrid plasmonic waveguide to construct a ${\rm…
This work aims to design a CMOS compatible, low-electrical power consumption modulator assisted by plasmons. For compactness and reduction of the electrical power consumption, electro-absorption based on the Franz-Keldysh effect in Germanium was chosen for modulation. It consists in the change of the absorption coefficient of the material near the band edge under the application of a static electric field, hence producing a direct modulation of the light intensity. The use of plasmons allows enhancing the electro-optical effect due to the high field confinement. An integrated electro-optical s…
Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines …
Electrooptic modulation performs the conversion between the electrical and optical domain with applications in data communication for optical interconnects, but also for novel optical compute algorithms such as providing nonlinearity at the output stage of optical perceptrons in neuromorphic analogue optical computing. Since the clock frequency for photonics on chip has a power overhead sweet slot around 10s of GHz, ultrafast modulation may only be required in long distance communication, but not for short onchip links. Here we show a roadmap towards atto Joule per bit efficient modulators on …
Future wireless communication networks have to handle data rates of tens or even hundreds of Gbit/s per link, requiring carrier frequencies in the unallocated terahertz (THz) spectrum. In this context, seamless integration of THz links into existing fiber-optic infrastructures is of great importance to complement the inherent portability and flexibility advantages of wireless networks by the reliable and virtually unlimited capacity of optical transmission systems. On the technological level, this requires novel device and signal processing concepts for direct conversion of data streams betwee…
From the onset of high-speed optical communications, lithium niobite (LN) has been the material of choice for electro-optic modulators owing to its large electro-optic response, wide transparent window, excellent thermal stability and long-term material reliability. Conventional LN electro-optic modulators while continue to be the workhorse of the optoelectronic industry become progressively too bulky, expensive and power hungry to fully serve the needs of this industry rapidly progressing towards highly integrated, cost-effective and energy efficient components and circuits. Recently develope…
Ultraviolet (UV) electro-optic modulation system based on graphene-plasmonic metamaterials nanomechanical system (NEMS) with superlubricity is investigated. Due to the strong optical absorption intensity of graphene in the UV region and the combination of metamaterial structure based on surface plasmons, the modulation depth of the UV NEMS electro-optic modulator approaches as high as 8.5 times compared to the counterpart modulator in visible light region. Meanwhile, the superlubricity significantly reduces the power consumption of the UV electro-optic modulation system due to its extremely lo…
Electro-optic modulation is a technology-relevant function for signal keying, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. With silicon-based modulators being bulky and inefficient, we here discuss graphene-based devices heterogeneously integrated. This study provides a critical and encompassing discussing of the physics and performance of graphene modulators rather than collecting relevant published work. We provide a holistic analysis of the underlying physics of modulators including the graphenes index tunability, the underlyi…
Electro-optic modulators are utilized ubiquitously ranging from applications in data communication to photonic neural networks. While tremendous progress has been made over the years, efficient phase-shifting modulators are challenged with fundamental tradeoffs, such as voltage-length, index change-losses or energy-bandwidth, and no single solution available checks all boxes. While voltage-driven phase modulators, such as based on lithium niobate, offer low loss and high speed operation, their footprint of 10's of cm-scale is prohibitively large, especially for density-critical applications, f…
Electro-optic modulation performs a technological relevant functionality such as for communication, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. Wile Silicon photonics enabled the integration and hence miniaturization of optoelectronic devices, the weak electro-optic performance of Silicon renders these modulators to be bulky and power-hungry compared to a single switch functionality known from electronics. To gain deeper insights into the physics and operation of modulators hetero-generous integration of emerging electro-optical…
Electro optic modulators being key for many signal processing systems must adhere to requirements given by both electrical and optical constrains. Distinguishing between charge driven (CD) and field driven (FD) designs, we answer the question of whether fundamental performance benefits can be claimed of modulators based on emerging electro-optic materials. Following primary metrics, we compare the performance of emerging electro-optic and electro-absorption modulators such as graphene, transparent conductive oxides, and Si, based on charge injection with that of the legacy FD modulators, such …
We investigate mode converters for Si wire to plasmonic slot waveguides at 1550 nm telecom wavelength. The structures are based on a taper geometry. We provide optimal dimensions with more than 90% power transmission for a range of metal (Au) thicknesses between 30-250 nm. We provide details on how to differentiate between the total power and the power in the main mode of the plasmonic slot waveguide. Our analysis is based on the orthogonality of modes of the slot waveguide subject to a suitable inner product definition. Our results are relevant for lowering the insertion loss and the bit erro…
Surface plasmon mediated hot carrier generation is widely utilized for the manipulation of the electron-photon interactions in many types of optoelectronic devices including solar cells, photodiodes, and optical modulators. A diversity of plasmonic systems such as nanoparticles, resonators, and waveguides have been introduced to enhance hot carrier generation; however, the impact of the propagating surface plasmons on hot carrier lifetime has not been clearly demonstrated. Here, we systematically study the hot carrier relaxation in thin film gold (Au) samples under surface plasmon coupling wit…
Graphene, the carbon monolayer and 2D allotrope of graphite, has the potential to impact technology with a wide range of applications such as optical modulators for high-speed communications. In contrast to modulation devices that rely on plasmonic or electronic effects, MEMS-based modulators can have wider tuning ranges albeit at a lower operating frequency. These properties make electro-optic mechanical modulators ideal for reflective-type display technologies as has been demonstrated previously with SiN membranes in Interferometric MOdulator Displays (IMODs). Despite their low-power consump…
Physical challenges at the device and interconnect level limit both network and computing energy efficiency. While photonics is being considered to address interconnect bottlenecks, optical routing is still limited by electronic circuitry, requiring substantial overhead for optical-electrical-optical conversion. Here we show a novel design of an integrated broadband photonic-plasmonic hybrid device termed MODetector featuring dual light modulation and detection function to act as an optical transceiver in the photonic network-on-chip. With over 10 dB extinction ratio and 0.8 dB insertion loss …
Electro-optic modulators with low voltage and large bandwidth are crucial for both analog and digital communications. Recently, thin-film lithium niobate modulators have enable dramatic performance improvements by reducing the required modulation voltage while maintaining high bandwidths. However, the reduced electrode gaps in such modulators leads to significantly higher microwave losses, which limit electro-optic performance at high frequencies. Here we overcome this limitation and achieve a record combination of low RF half-wave voltage of 1.3 V while maintaining electro-optic response with…
A fast and simple frequency domain method is introduced for the analysis of microring modulator response using the Jacobi Anger expansion method. Resonance frequency modulated microring (FMMR) modulators and coupling modulated microring modulators (CMMR) are analyzed using this method. The linearity of these modulators is analyzed. The third order intercept point (IP3) is calculated for CMMR devices and compared to Mach Zehnder interferometer (MZI) modulator devices. It is shown that CMMR devices can achieve a 12dB higher IP3 compared to MZI devices. CMMR devices have high second order nonline…
High performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative, since graphene's intrinsic carrier mobility increases at low temperature. Here we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room-temperat…
Electro-optic modulation is a key function for data communication. Given the vast amount of data handled, understanding the intricate physics and trade-offs of modulators on-chip allows revealing performance regimes not explored yet. Here we show a holistic performance analysis for waveguide-based electro-absorption modulators. Our approach centers around material properties revealing obtainable optical absorption leading to effective modal cross-section, and material broadening effects. Taken together both describe the modulator physical behavior entirely. We consider a plurality of material …
III-V heterostructure based high electron mobility transistors (HEMTs) offer superior performance as compared to CMOS silicon transistors owing to the high mobility in the 2D electron gas (2DEG) channel at the heterostructure interface. Gallium nitride (GaN) based HEMTs are also suitable for high power and high temperature applications. GaN has a rich offering of material properties spanning domains of nonlinear optics, piezoelectric micro-electro-mechanical systems (MEMS), and monolithic microwave integrated circuits (MMICs). In this paper, we propose HEMT inspired III-V electro-optic modulat…
Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n3r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JRD1. This is the highest material-related in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5 mm-long device amounts to 210 mV…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. However, the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits on-chip scaling density. To address these limitations, here we experimentally demonstrate a coupling-enhanced electro-absorption modulator by heterogeneously integrating a…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. However the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits scaling density. Furthermore, modulators bear a fundamental a frequency-response to energy-sensitive trade-off, a limitation that can be overcome with coupling-based modula…
We report the design and operation of a surface-emitting surface acoustic wave (SAW) acousto-optical modulator which behaves as a cm-scale linear hologram in response to an applied electronic waveform. The modulator is formed by an optical waveguide, transducer, and out-coupling surface grating on a 1 mm-thick lithium niobate substrate. We demonstrate the ability to load and illuminate a 9-region linear hologram into the modulator's 8 mm-long interaction region using applied waveforms of 280-320 MHz. To the best of the authors' knowledge, this is the first demonstration of a monolithically-int…
We present an electro-optic modulator exploiting an array of Vanadium dioxide nanorods operating in the epsilon near regime as the active switching material integrated in a silicon waveguide. The modulator takes advantage of the insulator-to-metal transition of Vanadium dioxide to achieve a robust modulation depth of 19.7 dB/micron with a broad wavelength of operation. Using simulations, we demonstrate how the effective permittivity of the metamaterial can be tuned to a near-zero value by varying the nanorod geometry. The paper also proposes a novel hexagonal array design which achieves low in…
Photonic neural networks benefit from both the high channel capacity- and the wave nature of light acting as an effective weighting mechanism through linear optics. The neuron's activation function, however, requires nonlinearity which can be achieved either through nonlinear optics or electro-optics. Nonlinear optics, while potentially faster, is challenging at low optical power. With electro-optics, a photodiode integrating the weighted products of a photonic perceptron can be paired directly to a modulator, which creates a nonlinear transfer function for efficient operating. Here we model t…
Integrated thin-film lithium niobate (LN) electro-optic (EO) modulators of broad bandwidth, low insertion loss, low cost and high production rate are essential elements in contemporary inter-connection industries and disruptive applications. Here, we demonstrated the design and fabri-cation of a high performance thin-film LN EO modulator using photolithography assisted chemo-mechanical etching (PLACE) technology. Our device shows a 3-dB bandwidth over 50 GHz, along with a comparable low half wave voltage-length product of 2.16 Vcm. We obtain a fiber-to-fiber insertion loss of 2.6 dB.
Recently High Electron Mobility Transistor (HEMT) inspired III-V electro-optic modulator topologies were proposed for realizing high speed electro-optic modulators leveraging plasma dispersion effect due to the 2D Electron Gas (2DEG) present at the III-V heterostructure interface. The 2DEG is highly confined at the interface, extending to very low depths in the bulk ($\approx$10nm) and therefore has limited spatial overlap with the optical mode. In this paper, we propose a novel modulator design to boost the 2DEG-light interaction, wherein the HEMT is embedded within a high contrast grating (H…
High efficiency and a compact footprint are desired properties for electro-optic modulators. In this paper, we propose, theoretically investigate and experimentally demonstrate a recirculating phase modulator, which increases the modulation efficiency by modulating the optical field several times in a non-resonant waveguide structure. The 'recycling' of light is achieved by looping the optical path that exits the phase modulator back and coupling it to a higher order waveguide mode, which then repeats its passage through the phase modulator. By looping the light back twice, we were able to dem…
A simple optical circuit made by a cascade of two graphene-on-silicon electro absorption modulators (EAMs) of different length is used for the optical pre-emphasis of 10 Gb/s non-return-to-zero (NRZ) signals by delay-inverse-weight compensation. Transmission up to 100 km on single mode fiber (SMF) without dispersion compensation is reported, showing also the large performance advantage (6 dB in back-to back and around 5 dB in transmission) in respect of the conventional single EAM transmitter configuration.
A novel thin-film LiNbO3 (TFLN) electro-optic modulator is proposed and demonstrated. LiNbO3-silica hybrid waveguide is adopted to maintain low optical loss for an electrode spacing as narrow as 3 μm, resulting in a record low half-wave-voltage length product of only 1.7 V*cm. Capacitively loaded traveling-wave electrodes (CL-TWEs) are employed to reduce the microwave loss, while quartz substrate is used in place of silicon substrate to achieve velocity matching. The fabricated TFLN modulator with a 5-mm-long modulation region exhibits a half-wave-voltage of 3.4 V and merely 1.3 dB roll-off in…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator used for encoding optical signals. Here, we present a GeSn electro-absorption modulator that can operate in the mid-infrared range. Importantly, this device is monolithically integrated on a silicon substrate, which provides compatibility with standard complementary metal-oxide-semiconductor technology for scalable manufacturing. By alloying Ge with Sn to e…
An integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulator (MZM) is shown at near-infrared wavelengths. The design uses TFLN bonded to planarized silicon nitride waveguide circuits, and does not require etching or patterning of TFLN. The push-pull MZM achieves a half-wave voltage length product ($V_πL$) of 0.8 V$.$cm at 784 nm. MZM devices with 0.4 cm and 0.8 cm modulation length show a broadband electro-optic response with a 3 dB bandwidth beyond 100 GHz, with the latter showing a bandwidth to half-wave voltage ratio of 100 GHz/V.
Intensity modulators are an essential component in optics for controlling free-space beams. Many applications require the intensity of a free-space beam to be modulated at a single frequency, including wide-field lock-in detection for sensitive measurements, mode-locking in lasers, and phase-shift time-of-flight imaging (LiDAR). Here, we report a new type of single frequency intensity modulator that we refer to as a longitudinal piezoelectric resonant photoelastic modulator. The modulator consists of a thin lithium niobate wafer coated with transparent surface electrodes. One of the fundamenta…
We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can sat…
Integrated lithium niobate (LN) photonics is a promising platform for future chip-scale microwave photonics systems owing to its unique electro-optic properties, low optical loss and excellent scalability. A key enabler for such systems is a highly linear electro-optic modulator that could faithfully covert analog electrical signals into optical signals. In this work, we demonstrate a monolithic integrated LN modulator with an ultrahigh spurious-free dynamic range (SFDR) of 120.04 dB Hz4/5 at 1 GHz, using a ring-assisted Mach-Zehnder interferometer configuration. The excellent synergy between …
We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), e…
