Performance Enhancement of Nanoscale ${\rm VO}_2$ Modulators Using Hybrid Plasmonics
Herman M. K. Wong, Amr S. Helmy
备注：
13 pages, 17 figures, 3 tables
发表信息：
H. M. K. Wong and A. S. Helmy, "Performance Enhancement of Nanoscale VO2 Modulators Using Hybrid Plasmonics", J. Lightw. Technol. 36, no. 3, 797 - 808 (2018)
Vanadium dioxide (${\rm VO}_2$) is a phase change material (PCM) that exhibits a large change in complex refractive index on the order of unity upon switching from its dielectric to its metallic phase. Although this property is key for the design of ultracompact optical modulators of only a few microns in footprint, the high absorption of ${\rm VO}_2$ leads to appreciable insertion loss (IL) that limits the modulator performance. In this paper, through theory and numerical modeling, we report on a new paradigm, which demonstrates how the use of a hybrid plasmonic waveguide to construct a ${\rm VO}_2$ based modulator can improve the performance by minimizing its IL while achieving high extinction ratio (ER) in comparison to a purely dielectric waveguide. The hybrid plasmonic waveguide that contains an additional metal layer with even higher loss than ${\rm VO}_2$ enables unique approaches to engineer the electric field (E-field) intensity distribution within the cross section of the modulator. The resulting figure-of-merit, FoM = ER/IL, is much higher than what is possible by simply incorporating ${\rm VO}_2$ into a silicon wire waveguide. A practical modulator design using this new approach, which also includes input and output couplers yields ER = 3.8 dB/μm and IL = 1.4 dB/μm (FoM = 2.7), with a 3-dB optical bandwidth >500 nm, in a device length = 2 μm, and cross-sectional dimensions = 200 nm $\times$ 450 nm. To the best of our knowledge, this is one of the smallest modulator designs proposed to date that also exhibits amongst the highest ER, FoM, and optical bandwidth, in comparison to existing designs. In addition to ${\rm VO}_2$, we investigate two other PCMs incorporated within the waveguide structure. The improvements obtained for ${\rm VO}_2$ modulators do not extend to other PCMs.
A plasmonic modulator is a device that controls the amplitude or phase of propagating plasmons. In a pure plasmonic modulator, the presence or absence of a pump plasmonic wave controls the amplitude of a probe plasmonic wave through a channel. This control has to be mediated by an interaction between disparate plasmonic waves, typically requiring the integration of a nonlinear material. In this work, we demonstrate the first 2D semiconductor nonlinear plasmonic modulator based on a WSe2 monolayer integrated on top of a lithographically defined metallic waveguide. We utilize the strong coupling…
Here, we demonstrate a spectrally broadband, GHz-fast Mach-Zehnder interferometeric modulator, exhibiting a miniscule VpL of 95 V-um, deploying a sub-wavelength short electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics.
Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a temperature stability up to 250°C. Mach-Zehnder interferometer modulators with 10-$μ$m-long phase shifters were operated at 116 Gbit/s PAM-4 and 72 Gbit/s NRZ. Wide and open eye diagrams with extinction ratios beyond 15 dB were found. The fast and robust devices are apt to an employment in industrial environments.
Optical modulators are required to have high modulation bandwidths and a compact footprint. In this paper we experimentally demonstrate a novel Si/In$_2$O$_3$ hybrid plasmonic waveguide modulator, which is realized by an asymmetric directional coupler (ADC) consisting of a silicon photonic waveguide and a Si/In$_2$O$_3$ hybrid plasmonic waveguide. The optical signal is modulated by radio-frequency (RF) signal applied on the Au electrodes at the top of MOS capacitor and contacting the In$_2$O$_3$ thin film. The record-high modulation bandwidth of >40 GHz is realized by a silicon-doping-free met…
We present a plasmonic modulator based on hybrid orthogonal silver junctions using vanadium dioxide as the modulating material on the silicon on insulator. The modulator has an ultra-compact footprint of 1.8μm x 1μm with a 100nm x 100nm modulating section based on the orthogonal geometry. We take advantage of large change in the refractive index of vanadium dioxide during its phase transition to achieve a high modulation depth of 46.89dB/μm. We also provide a fabrication strategy for the development of this device. The device geometry has potential applications in the development of next gener…
We introduce phase-change material Ge2Sb2Te5 (GST) into metal-insulator-metal (MIM) waveguide systems to realize chipscale plasmonic modulators and switches in the telecommunication band. Benefitting from the high contrast of optical properties between amorphous and crystalline GST, the three proposed structures can act as reconfigurable and non-volatile modulators and switches with excellent modulation depth 14 dB and fast response time in nanosecond, meanwhile possessing small footprints, simple frameworks and easy fabrication. This work provides new solutions to design active devices in MIM…
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power handling and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here we experimentally demonstrate that plasmonic modulators do not trade off any performance parameter, featuring - at the same time - a short length of 10s of micrometers, record-high flat frequency response bey…
We introduce chip-integrated visible light communication-band modulators based on niobium (Nb) metallic plasmonic nano-antenna arrays. Our plasmonic nano-devices provide strong sensitivity to the polarization of the incident visible light and the geometrical parameters of their subwavelength nanoscale building blocks. Moreover, they offer optical modulation properties with modulation depth MD = 60% at resonant wavelength lambda= 716 nm, at room temperature. By engineering the photo response of the Nb nano-device arrays, we observe a maximum extinction A(lambda)= 1- R(lambda}) = 95 % at resonan…
Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines …
In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 $μm$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. The estimated energy consumption is as low as 20 $fJ/bit$.
Future wireless communication networks have to handle data rates of tens or even hundreds of Gbit/s per link, requiring carrier frequencies in the unallocated terahertz (THz) spectrum. In this context, seamless integration of THz links into existing fiber-optic infrastructures is of great importance to complement the inherent portability and flexibility advantages of wireless networks by the reliable and virtually unlimited capacity of optical transmission systems. On the technological level, this requires novel device and signal processing concepts for direct conversion of data streams betwee…
Simultaneous spatio-temporal confinement of energetic electron pulses to femtosecond and nanometer scales is a topic of great interest in the scientific community, given the potential impact of such development on a wide spectrum of scientific and industrial applications. For example, in ultrafast electron scattering, nanoscale probes would enable accurate maps of structural dynamics in materials with nanoscale heterogeneity, thereby understanding the role of boundaries and defects on macroscopic properties. On the other hand, advances in this field are mostly limited by the electron source br…
This work aims to design a CMOS compatible, low-electrical power consumption modulator assisted by plasmons. For compactness and reduction of the electrical power consumption, electro-absorption based on the Franz-Keldysh effect in Germanium was chosen for modulation. It consists in the change of the absorption coefficient of the material near the band edge under the application of a static electric field, hence producing a direct modulation of the light intensity. The use of plasmons allows enhancing the electro-optical effect due to the high field confinement. An integrated electro-optical s…
Many consumer technologies and scientific methods rely on photodetection of infrared light. We report a Schottky photodetector operating below silicon's band gap energy, through hot carrier injection from a nanoscale metallic absorber. Our design relies on simple CMOS-compatible 'bottom up' fabrication of fractally nanostructured aluminium films. Due to the fractal nature of the nanostructuring, the aluminium films support plasmonically enhanced absorption over a wide wavelength range. We demonstrate two orders of magnitude improvements of responsivity, noise-equivalent-power, and detectivity …
Plasmonic waveguides are key elements in nanophotonic devices serving as optical interconnects between nanoscale light sources and detectors. Multimode operation in plasmonic two-wire transmission lines promises important degrees of freedom for near-field manipulation and information encoding. However, highly confined plasmon propagation in gold nanostructures is typically limited to the near-infrared region due to ohmic losses, excluding all visible quantum emitters from plasmonic circuitry. Here, we report on top-down fabrication of complex plasmonic nanostructures in single-crystalline silv…
Using a pair of p- and n-type semiconductors separated by a nanoscale vacuum gap, we introduce an optoelectronics element prototype, "photonic p-n junction", as an analogue of the electronic p-n junction, which is demonstrated to serve as an ideal near-field heat flux modulator. The high modulation performance relies on the switch among three fundamental photon-carrier interaction modes (i.e., surface plasmon polaritons, symmetric depleted internal plasmon polaritons and symmetric accumulated surface plasmon polaritons) caused by the changes in hole and electron densities near the surfaces und…
Electro optic modulators being key for many signal processing systems must adhere to requirements given by both electrical and optical constrains. Distinguishing between charge driven (CD) and field driven (FD) designs, we answer the question of whether fundamental performance benefits can be claimed of modulators based on emerging electro-optic materials. Following primary metrics, we compare the performance of emerging electro-optic and electro-absorption modulators such as graphene, transparent conductive oxides, and Si, based on charge injection with that of the legacy FD modulators, such …
From the onset of high-speed optical communications, lithium niobite (LN) has been the material of choice for electro-optic modulators owing to its large electro-optic response, wide transparent window, excellent thermal stability and long-term material reliability. Conventional LN electro-optic modulators while continue to be the workhorse of the optoelectronic industry become progressively too bulky, expensive and power hungry to fully serve the needs of this industry rapidly progressing towards highly integrated, cost-effective and energy efficient components and circuits. Recently develope…
There is an active demand to develop efficient nanoscale nonlinear sources for applications in photonic circuitry, quantum optics and biosensing. To this end, plasmonic systems have been utilized to boost the nonlinear signal generation, however high efficiencies of frequency conversion for realistic applications remain a challenge. Metal-insulator-metal (MIM) nanocavities are good candidates for strongly concentrating the fields at the nanoscale to enhance the optical nonlinearities, however they typically suffer from the requirement to have a quadrupolar resonance at the emission wavelength.…
Plasmonic waveguides are an essential element of nanoscale coherent sources, including nanolasers and four-wave mixing (FWM) devices. Here we report how the design of the plasmonic waveguide needs to be guided by the ultimate application. This contrasts with traditional approaches in which the waveguide is considered in isolation. We find that hybrid plasmonic waveguides, with a nonlinear material sandwiched between the metal substrate and a high-index layer, are best suited for FWM applications, whereas metallic wedges are preferred in nanolasers. We also find that in plasmonic nanolasers hig…
Nanophotonics is an important branch of modern optics dealing with light-matter interaction at the nanoscale. Nanoparticles can exhibit enhanced light absorption under illumination by light, and they become nanoscale sources of heat that can be precisely controlled and manipulated. For metal nanoparticles, such effects have been studied in the framework of $\textit{thermoplasmonics}$ which, similar to plasmonics itself, has a number of limitations. Recently emerged $\textit{all-dielectric resonant nanophotonics}$ is associated with optically-induced electric and magnetic Mie resonances, and th…
