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arXiv 2012.01695physics.opticsphysics.app-ph

Design of on-chip plasmonic modulator with vanadium-dioxide in hybrid orthogonal junctions on Silicon-on-Insulator

Gregory Tanyi, Miao Sun, Ranjith Unnithan

英文摘要:

We present a plasmonic modulator based on hybrid orthogonal silver junctions using vanadium dioxide as the modulating material on the silicon on insulator. The modulator has an ultra-compact footprint of 1.8μm x 1μm with a 100nm x 100nm modulating section based on the orthogonal geometry. We take advantage of large change in the refractive index of vanadium dioxide during its phase transition to achieve a high modulation depth of 46.89dB/μm. We also provide a fabrication strategy for the development of this device. The device geometry has potential applications in the development of next generation high frequency photonic modulators for optical communications which require a nanometer scale footprint, large modulation depth and small insertion losses.

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