Rubab Amin, Rishi Maiti, Yaliang Gui, Can Suer, Mario Miscuglio, Elham Heidari, Ray T. Chen, Hamed Dalir, Volker J. Sorger
Here, we demonstrate a spectrally broadband, GHz-fast Mach-Zehnder interferometeric modulator, exhibiting a miniscule VpL of 95 V-um, deploying a sub-wavelength short electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics.
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An integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulator (MZM) is shown at near-infrared wavelengths. The design uses TFLN bonded to planarized silicon nitride waveguide circuits, and does not require etching or patterning of TFLN. The push-pull MZM achieves a half-wave voltage length product ($V_πL$) of 0.8 V$.$cm at 784 nm. MZM devices with 0.4 cm and 0.8 cm modulation length show a broadband electro-optic response with a 3 dB bandwidth beyond 100 GHz, with the latter showing a bandwidth to half-wave voltage ratio of 100 GHz/V.
We describe a resonantly enhanced Mach-Zehnder modulator (MZM) that can be operated over a wide temperature range of 55C without being actively biased, while providing a significant resonant enhancement of 6.8 at the nominal wavelength / temperature compared to a linear MZM driven with a distributed driver. More importantly, it enables a ~20X improvement in power consumption compared to a 50 Ω matched linear traveling wave modulator with comparable phase shifter technology, drive voltage and output optical modulation amplitude. Passive biasing of the Mach-Zehnder interferometer is further impl…
Photonic integrated circuits (PICs) are the foundation of on-chip optical technologies. Mach-Zehnder modulators are appealing building blocks of PICs which mostly rely on weak and volatile optical effects in materials. In contrast, phase change materials such as GSST are promising candidates to realize efficient and nonvolatile reconfigurable optical devices. However, the phase transitions of PCMs are accompanied by large changes in the imaginary parts of their refractive indices which make the design of MZMs challenging. In this paper, two interesting design methods named as loss-balancing an…
Broadband integrated thin-film lithium niobate (TFLN) electro-optic modulators (EOM) are desirable for optical communications and signal processing in both the O-band (1310 nm) and C-band (1550 nm). To address these needs, we design and demonstrate Mach-Zehnder (MZ) EOM devices in a hybrid platform based on TFLN bonded to foundry-fabricated silicon photonic waveguides. Using a single silicon lithography step and a single bonding step, we realize MZ EOM devices which cover both wavelength ranges on the same chip. The EOM devices achieve 100 GHz EO bandwidth (referenced to 1 GHz) and about 2-3 V…
Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable Application Specific Integrated Circuits (ASICs) for machine learning and signal processing. However, both foundry ready silicon based modulators and conventional material based devices utilizing Lithium niobate fall short in simultaneously providing high chip packaging density and fast speed. Current driven ITO based modulators have the potential to achieve both enabled by efficient light matter interactions. Here, we introduce micrometer compact Mach Zehnder Interferometer (MZI) …
Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (VπL = 63 Vum). This is achieved by (i) selecting a strong index changing material (ITO) and (ii) improving the field overlap as verified by the electrostatic field lines. Furthermore, we show that this platform serves as a building block in an endfire silicon photonics optical phased array (OPA) with a hal…
High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in th…
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in THz wireless applications demands modulators with frequency responses to the sub-THz range, high power handling and very low nonlinear distortions, simultaneously. However, a modulator with all those characteristics has not been demonstrated to date. Here we experimentally demonstrate that plasmonic modulators do not trade off any performance parameter, featuring - at the same time - a short length of 10s of micrometers, record-high flat frequency response bey…
Optical Linearization of Silicon Photonic Ring-Assisted Mach-Zehnder Modulator
本文实验展示了硅光子环形辅助马赫-曾德尔调制器，通过光学域线性化和自动重配置算法，实现超过113 dB.Hz$^{2/3}$的无杂散动态范围，并提升调制斜率效率，可集成于射频光子SoC。
Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics and beam steering. All these applications require integrated and voltage-efficient modulator solutions with compact formfactors that are seamlessly integratable with Silicon photonics platforms and feature near-CMOS material processing synergies. However, existing integrated modulators are challenged to meet these requirements. Conversely, emerging electro-optic materials heterogeneously inte…
Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines …
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. However, the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits on-chip scaling density. To address these limitations, here we experimentally demonstrate a coupling-enhanced electro-absorption modulator by heterogeneously integrating a…
Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has enabled not only miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. However the millimeter-to-centimeter large footprint of many foundry-ready photonic electro-optic modulators significantly limits scaling density. Furthermore, modulators bear a fundamental a frequency-response to energy-sensitive trade-off, a limitation that can be overcome with coupling-based modula…
Electro-optic modulators for high-speed on-off keying (OOK) are key components of short- and mediumreach interconnects in data-center networks. Besides small footprint and cost-efficient large-scale production, small drive voltages and ultra-low power consumption are of paramount importance for such devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH) integration is perfectly suited for meeting these challenges. The approach combines the unique processing advantages of large-scale silicon photonics with unrivalled electro-optic (EO) coefficients obtained by molecular e…
Perspective of high-speed Mach-Zehnder modulators based on nonlinear optics and complex band structures
本文提出一种基于非线性光学和RF光子晶体复杂能带结构的高速行波马赫-曾德尔调制器电磁波分析视角，克服了传统电路模型的低效与不准确，在Si和LiNbO3平台上验证了其简单、准确和高效的优势。
Recently integrated optics has become an intriguing platform for implementing machine learning algorithms and inparticular neural networks. Integrated photonic circuits can straightforwardly perform vector-matrix multiplicationswith high efficiency and low power consumption by using weighting mechanism through linear optics. Although,this can not be said for the activation function which requires either nonlinear optics or an electro-optic module withan appropriate dynamic range. Even though all-optical nonlinear optics is potentially faster, its current integrationis challenging and is rather…
The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform has garnered increasing interest as an alternative to the SOI platform for realizing high-performance PICs. This is because of its several beneficial properties over the SOI platform, such as low optical losses, high thermo-optic stability, broader wavelength transparency range, and high tolerance to fabrication-process variations. However, SiN-on-SiO$_2$ b…
An ultra-narrow slot waveguide is fabricated for use in highly-efficient, electro-optic-polymer-based, integrated-optic modulators. Measurement results indicate that $V_πL$'s below 1.2 V.mm are possible for balanced Mach-Zehnder modulators using this ultra-narrow slot waveguide on a silicon-organic hybrid platform. Simulated $V_πL$'s of 0.35 V.mm have also been obtained. In addition to adapting standard recipes, we developed two novel fabrication processes for achieving miniaturized devices with high modulation sensitivity. To boost compactness and decrease the overall footprint, we use a fabr…
Optical modulators are at the heart of optical communication links. Ideally, they should feature low insertion loss, low drive voltage, large modulation bandwidth, high linearity, compact footprint and low manufacturing cost. Unfortunately, these criteria have only been achieved on separate occasions.Based on a Silicon and Lithium Niobate hybrid integration platform, we demonstrate Mach-Zehnder modulators that simultaneously fulfill these criteria. The presented device exhibits an insertion loss of 2.5 dB, voltage-length product of 2.2 Vcm, high linearity, electro-optic bandwidth of at least 7…
High-performance thin-film lithium niobate Mach-Zehnder modulator on thick silica buffering layer
本研究在12微米厚二氧化硅埋层上采用周期性电容加载行波电极，实现了高性能薄膜铌酸锂马赫-曾德尔调制器，在C波段达到1.25 V·cm调制效率，67 GHz下滚降仅1.3 dB，简化了制造工艺并突破了电压-带宽限制。
We report on compact and efficient silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) with low phase shifter insertion loss of 0.7 dB. The 280 $μ$m-long phase shifters feature a $π$-voltage-length product of 0.41 Vmm and a loss-efficiency product as small as $aU_πL = 1.0\space\rm{VdB}$. The device performance is demonstrated in a data transmission experiment, where we generate on-off-keying (OOK) and four-level pulse-amplitude modulation (PAM4) signals at symbol rates of 100 GBd, resulting in line rates of up to 200 Gbit/s. Bit error ratios are below the threshold for hard-decision for…
High Performance Thin-film Lithium Niobate Modulator Applied ITO Composite Electrode with Modulation Efficiency of 1V*cm
针对薄膜铌酸锂调制器调制效率低、半波电压与调制长度存在权衡的问题，引入ITO透明导电氧化物复合电极，实现1.02 V*cm的超高调制效率，同时兼具108 GHz电光带宽，为下一代低成本高性能调制器及多通道光发射芯片小型化提供新方案。
In this paper, we experimentally demonstrate that a silicon dual-drive Mach-Zehnder modulator (DD-MZM) has great potential for next-generation data center interconnections (DCIs). For intra-data center interconnections, 120 Gb/s Nyquist 4-ary pulse amplitude modulation (PAM-4) signal is successfully generated with a silicon DD-MZM operating at C-band and transmitted over 2 km standard single-mode fiber (SSMF) with a bit error rate (BER) of 5.55x10-4. For inter-data center interconnections, single sideband (SSB) modulation is chosen to avoid power fading caused by fiber chromatic dispersion and…
By combining the large Purcell effect of photonic crystal nanocavity and the strong plasma dispersion effect of the transparent conductive oxides, ultra-compact silicon modulators with heterogeneously integrated indium-tin-oxide (ITO) can potentially achieve unprecedented energy efficiency to atto-joule per bit. In this article, we report the first high-speed silicon nanocavity modulator driven by an ITO gate, achieving 2.2 GHz bandwidth. On-off-key modulation is measured up to 5 Gb/s with only 2 V voltage swing and 18.3 fJ/bit energy efficiency. In addition, we perform in-depth analysis of th…
Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical operation range, resilience to high temperature and ultracompact footprint are introduced. Measurements show a modulation bandwidth of 70 GHz and a temperature stability up to 250°C. Mach-Zehnder interferometer modulators with 10-$μ$m-long phase shifters were operated at 116 Gbit/s PAM-4 and 72 Gbit/s NRZ. Wide and open eye diagrams with extinction ratios beyond 15 dB were found. The fast and robust devices are apt to an employment in industrial environments.
Ferroelectric Nematic Liquid Crystal-Based Silicon Photonic Modulator Demonstrated at 102 Gbit/s PAM-4
首次实现硅与铁电向列相液晶混合集成调制器，在C波段以3.5 V偏置达成102 Gbit/s PAM-4调制，交流VπL为0.3 V·cm。
Radiation-induced Ionization Effects and Space Mission Requirements for Silicon Photonic Mach-Zehnder Modulators
本研究通过10-keV X射线辐照实验，揭示硅基光子马赫-曾德尔调制器在标准偏置下因总电离剂量效应导致带宽降低和误码率上升，并强调标准工作条件测试对空间任务评估的关键性。
Integrated Electro-Optic Absorption Modulator for Silicon Nitride Platform
本文首次在氮化硅波导上实现基于ITO的高速电光调制器，展示5.7 dB插入损耗和约1 GHz带宽，工艺与CMOS兼容，为氮化硅光子计算平台开辟了新路径。
An ITO Graphene hybrid integrated absorption modulator on Si-photonics for neuromorphic nonlinear activation
本文提出并演示了一种基于ITO-石墨烯混合集成的硅光子电光器件，通过异质结构反向传递函数设计出类ReLU的非线性激活响应，并将其集成到光子神经网络中，以提高推理精度和能效。
A systematic evaluation of Silicon-rich Nitride Electro-optic Modulator design and tradeoffs
本文系统评估富硅氮化物电光调制器设计，通过分析χ^(3)非线性极化率与DC-Kerr效应线性化方法，数值证明可实现低至0.5 Vcm的V_π L_π，并论证其在CMOS兼容平台上实现高速调制的可行性。
Integrated lithium niobate (LN) photonics is a promising platform for future chip-scale microwave photonics systems owing to its unique electro-optic properties, low optical loss and excellent scalability. A key enabler for such systems is a highly linear electro-optic modulator that could faithfully covert analog electrical signals into optical signals. In this work, we demonstrate a monolithic integrated LN modulator with an ultrahigh spurious-free dynamic range (SFDR) of 120.04 dB Hz4/5 at 1 GHz, using a ring-assisted Mach-Zehnder interferometer configuration. The excellent synergy between …
Giant electro-optic coefficient in single crystal barium titanate on oxide insulator based Mach-Zehnder interferometer
本研究在薄膜钛酸钡平台上实现了1268 pm/V的巨普克尔系数，接近体材料值，通过优化的湿法刻蚀制造单模波导并采用非平衡马赫-曾德尔干涉仪测量，为超低功耗集成光子器件提供了新方案。
Breaking the Baud Rate Ceiling of Electro-Optic Modulators Using Optical Equalization Technique
本文提出一种光学均衡技术，利用双驱动马赫-曾德尔调制器部分抵消响应降低信号升降时间，无需DSP即将硅调制器OOK速率提升至128 Gbaud，突破波特率上限并有望达到200 Gbaud以上。
Indium-Tin-Oxide for High-performance Electro-optic Modulation
本文综述了利用氧化铟锡（ITO）实现高性能超紧凑电光调制的研究，发现波导内联腔可显著提升消光比，并通过速度分析指出侧向偏置设计有望实现数百GHz的快速器件，且占地比硅光MZI小3个数量级。
Segmented, or slow-wave electrodes have emerged as an index-matching solution to improve bandwidth of traveling-wave Mach Zehnder and phase modulators on the thin-film lithium niobate on insulator platform. However, these devices require the use of a quartz handle or substrate removal, adding cost and additional processing. In this work, a high-speed dual-output electro-optic intensity modulator in the thin-film silicon nitride and lithium niobate material system that uses segmented electrodes for RF and optical index matching is presented. The device uses a silicon handle and does not require…
A Silicon Nitride Microring Modulator for High-Performance Photonic Integrated Circuits
针对SiN-on-SiO₂平台缺乏高性能有源调制器的问题，本文提出采用ITO-SiO₂-ITO堆叠作为上包层的SiN微环调制器，通过仿真验证其具备高效率、宽带宽、低损耗等优异性能，推动该平台有源PIC的发展。
A fast and simple frequency domain method is introduced for the analysis of microring modulator response using the Jacobi Anger expansion method. Resonance frequency modulated microring (FMMR) modulators and coupling modulated microring modulators (CMMR) are analyzed using this method. The linearity of these modulators is analyzed. The third order intercept point (IP3) is calculated for CMMR devices and compared to Mach Zehnder interferometer (MZI) modulator devices. It is shown that CMMR devices can achieve a 12dB higher IP3 compared to MZI devices. CMMR devices have high second order nonline…
We propose and demonstrate a hybrid silicon and lithium niobate Michelson Interferometer Modulator (MIM) with enhanced modulation efficiency compared to a Mach-Zehnder modulator. The modulator is based on seamless integration of a high-contrast waveguide based on lithium niobate-a popular modulator material-with compact, low-loss silicon circuitry. The present device demonstrates a modulation efficiency as high as 1.2 Vcm and a low insertion loss of 3.3 dB. The 3dB electro-optic bandwidth is approximately 17.5 GHz. The optical eye diagrams, operating at 32 Gbit/s and 40 Gbit/s, with measured d…
Sub-1 Volt and High-Bandwidth Visible to Near-Infrared Electro-Optic Modulators
本文实现了可见光至近红外波段的亚1伏特、高带宽薄膜铌酸锂电光调制器，并首次演示了该波段的集成电光频率梳和超傅里叶极限脉冲频率移动。
Piezoelectric MEMS Phase Modulator for Silicon Nitride Platform in the Visible Spectrum
本文提出了一种基于硅氮化物平台的压电MEMS相位调制器，实现了超低功耗和高可扩展性的高效相位调制，适用于可见光谱中的光子集成电路应用。
The 2 μm waveband is an area that could have significant technological consequences, with applications ranging from spectroscopy, LIDAR and free-space communications. The development of the thulium-doped fiber amplifier, hollow-core photonic bandgap fiber and 2 μm GaSb-based diode lasers has highlighted the ability of the waveband in alleviating the fiber capacity crisis in the incumbent communication infrastructure. The above has initiated vibrant development in the silicon photonic-space at 2 μm, where the area is capable of enabling highly-integrated photonic circuits, and potentially at lo…
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration of electro-optic modulators based on the Pockels effect in barium titanate (BTO) thin films into the back-end-of-line of a photonic integrated circuit (PIC) platform. Molecular wafer bonding allows fu…
Electro-optic modulation performs a technological relevant functionality such as for communication, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. Wile Silicon photonics enabled the integration and hence miniaturization of optoelectronic devices, the weak electro-optic performance of Silicon renders these modulators to be bulky and power-hungry compared to a single switch functionality known from electronics. To gain deeper insights into the physics and operation of modulators hetero-generous integration of emerging electro-optical…
Engineering cm-scale true push-pull electro-optic modulators in a suspended GaAs photonic integrated circuit platform by exploiting the orientation induced asymmetry of the Pockels $r_{41}$ coefficient
该研究利用 GaAs 中 Pockels $r_{41}$ 系数的取向不对称性，在悬浮 PIC 平台上实现厘米级真推挽 MZI 电光调制器，并验证 MEMS 式悬浮波导有源器件潜力。
Inducing a large refractive-index change is the holy grail of reconfigurable photonic structures, a goal that has long been the driving force behind the discovery of new optical material platforms. Recently, the unprecedentedly large refractive-index contrast between the amorphous and crystalline states of Ge-Sb-Te (GST)-based phase-change materials (PCMs) has attracted tremendous attention for reconfigurable integrated nanophotonics. Here, we introduce a microheater platform that employs optically transparent and electrically conductive indium-tin-oxide (ITO) bridges for the fast and reversib…
A sub-volt near-IR lithium tantalate electro-optic modulator
本文提出一种在737 nm下基于薄膜钽酸锂的低损耗集成电光Mach-Zehnder调制器，实现了0.65 V·cm的低半波电压-长度积、30 dB消光比和20 GHz带宽，且直流偏置漂移优于薄膜铌酸锂调制器。
Electro-optic modulators within Mach--Zehnder interferometers are a common construction for optical switches in integrated photonics. A challenge faced when operating at high switching speeds is that noise from the electronic drive signals will effect switching performance. Inspired by the Mach--Zehnder lattice switching devices of Van Campenhout et al. [Opt. Express, 17, 23793 (2009)] and techniques from the field of Nuclear Magnetic Resonance known as composite pulses, we present switches which offer protection against drive-noise in both the on and off state of the switch for both the phase…
Integrated thin film lithium niobate mid-infrared modulator
本文提出一种高性能中红外调制器，利用铌酸锂在 Sapphire 上的特性，实现3.95-4.3μm波段的宽频带高速调制，展示10Gbit/s数据传输和80GHz梳状光生成，为中红外光子系统发展奠定基础。
Electro-optic (EO) modulators rely on interaction of optical and electrical signals with second-order nonlinear media. For the optical signal, this interaction can be strongly enhanced by using dielectric slot-waveguide structures that exploit a field discontinuity at the interface between a high-index waveguide core and the low-index EO cladding. In contrast to this, the electrical signal is usually applied through conductive regions in the direct vicinity of the optical waveguide. To avoid excessive optical loss, the conductivity of these regions is maintained at a moderate level, thus leadi…
We demonstrate for the first time, to the best of our knowledge, reconfigurable and real-time orthogonal time-domain demultiplexing of coherent multilevel Nyquist signals in silicon photonics. No external pulse source is needed and frequencytime coherence is used to sample the incoming Nyquist OTDM signal with orthogonal sinc-shaped Nyquist pulse sequences using Mach-Zehnder modulators. All the parameters such as bandwidth and channel selection are completely tunable in the electrical domain. The feasibility of this scheme is demonstrated through a demultiplexing experiment over the entire C-b…
Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n3r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JRD1. This is the highest material-related in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5 mm-long device amounts to 210 mV…
Photonic crystal cavity IQ modulators in thin-film lithium niobate for coherent communications
针对TFLN平台IQ调制器尺寸大、不可级联的问题，提出基于双PhC腔的法布里-珀罗增强迈克尔逊干涉仪结构，实现GHz带宽、CMOS兼容电压下的可级联幅度与相位调制，支持密集集成与高信息密度收发器。
Silicon rich nitride-lithium niobate on insulator platform for photonics integrated circuits
提出SRN-LNOI混合集成平台，实现低损耗波导、多类无源器件及120 GBaud无数字补偿的LNOI马赫-曾德尔调制器。
High Performance Graphene Integrated Photonics Platform Enabled by Gold-assisted Transfer
本文通过金辅助转移技术构建高性能石墨烯集成光子学平台，实现高效热光调制器、高速电吸收调制器及马赫-曾德尔调制器，性能优于现有技术并具备CMOS兼容性。
Physics to System-level Modeling of Silicon-organic-hybrid Nanophotonic Devices
针对硅-有机混合纳米光子器件缺乏EDA兼容建模方法的问题，提出一种从物理到系统级的模块化仿真方法，经实验验证可高效建模多种调制器拓扑及大规模系统。
We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic temperatures. As an example of the potential of the platform, we demonstrate a compact (~40 μm diameter) silicon nitride ring resonator modulator operating at 780 nm with intrinsic…
Free-space optics (FSO) offer promising solutions in wireless systems where many different devices need to communicate and interoperate, exchanging massive amounts of data as in communication and sensor networks, and in technologies for positioning and ranging. In these applications, control and manipulation of the light field is required for properly generating and correctly receiving FSO beams even in the presence of unpredictable objects and turbulence in the light path. In this work, we use a programmable mesh of Mach-Zehnder Interferometers (MZIs) to automatically control the complex fiel…
Centimetre-Scale Micro-Transfer Printing to enable Heterogeneous Integration of Thin Film Lithium Niobate with Silicon Photonics
针对SiN光子平台缺乏有源电光功能的问题，本文采用微转印方法将厘米级TFLN器件异构集成到SiN上，实现低损耗、3.2 V半波电压及35 GHz高速调制。
Electro-Optic Co-Simulation in High-Speed Silicon Photonics Transceiver Design Using Standard Electronic Circuit Simulator
针对高速硅光子收发器设计，提出精确可互操作的光子模型，支持电光协同仿真，在超过50 Gbaud符号率下与实验吻合，最高验证至64 Gbaud，为太比特级收发器设计奠定基础。
Highly Uniform Thermally Undercut Silicon Photonic Devices in a 300 mm CMOS Foundry Process
本文在300 mm CMOS代工线开发晶圆级热底切工艺，通过移除波导下方衬底增强热隔离，显著提升微盘调制器和MZI相移器调谐效率，并验证全晶圆均匀性与高良率。
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