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arXiv 1809.03544physics.app-phphysics.optics
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0.52硅光子学中的V-mm ITO基Mach-Zehnder调制器

0.52 V-mm ITO-based Mach-Zehnder Modulator in Silicon Photonics

Rubab Amin, Rishi Maiti, Caitlin Carfano, Zhizhen Ma, Mohammad H. Tahersima, Yigal Lilach, Dilan Ratnayake, Hamed Dalir, Volker J. Sorger

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摘要：

电光调制器将电子信号转换到光域，并且是现代电信网络、RF光子学以及量子光子学和光束转向中的新兴应用中的关键组件。所有这些应用都需要集成式高电压效率调制器解决方案，这些解决方案具有紧凑的外形，可与硅光子平台无缝集成，并具有近CMOS材料处理协同效应。然而，现有的集成调制器面临满足这些要求的挑战。相反，新兴的电光材料与Si光子异质集成为器件工程开辟了新的途径。铟锡氧化物（ITO）是一种用于在Si中异质集成的引人注目的材料，其表现出强大的电光效应，其特征在于在电信频率下的单位阶指数。在这里，我们克服了这些限制，并展示了基于马赫曾德尔干涉仪（MZI）的单片集成ITO电光调制器，其特征在于高性能半波电压和有源器件长度乘积VpL = 0.52 V-mm。单位强折射率变化如何使30微米短的π移相器在远离ε承载的折射率主导区域中操作ITO，零ENZ点。该器件通过实验证实了ITO中的电相移，使其能够用于多方面的应用，包括密集的片上通信网络、光子神经网络中激活函数的非线性以及LiDAR的相控阵应用。

英文摘要：

Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics and beam steering. All these applications require integrated and voltage-efficient modulator solutions with compact formfactors that are seamlessly integratable with Silicon photonics platforms and feature near-CMOS material processing synergies. However, existing integrated modulators are challenged to meet these requirements. Conversely, emerging electro-optic materials heterogeneously integrated with Si photonics open a new avenue for device engineering. Indium tin oxide (ITO) is one such compelling material for heterogeneous integration in Si exhibiting formidable electro-optic effect characterized by unity order index at telecommunication frequencies. Here we overcome these limitations and demonstrate a monolithically integrated ITO electro- optic modulator based on a Mach Zehnder interferometer (MZI) featuring a high-performance half-wave voltage and active device length product, VpL = 0.52 V-mm. We show, how that the unity-strong index change enables a 30 micrometer-short pi-phase shifter operating ITO in the index-dominated region away from the epsilon-bear-zero ENZ point. This device experimentally confirms electrical phase shifting in ITO enabling its use in multifaceted applications including dense on-chip communication networks, nonlinearity for activation functions in photonic neural networks, and phased array applications for LiDAR.

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