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arXiv 1911.05967cond-mat.mtrl-sci
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扩展Hubbard相互作用的有效第一性原理赝杂化密度泛函方法

Efficient First-Principles Approach with a Pseudohybrid Density Functional for Extended Hubbard Interactions

Sang-Hoon Lee, Young-Woo Son

摘要:

为了快速、准确地计算固体的带隙,我们提出了一种{ \it ab initio}方法,该方法将密度泛函理论加在位Hubbard相互作用(DFT+ $U$)扩展到包括位间Hubbard相互作用($V$).这种形式主义是适当的考虑各种相互作用,如当地的库仑排斥,共价杂交,以及它们在固体中的共存。为了实现$U$和$V$的自洽评价,我们适应最近提出的Agapito-Curtarolo-Buongiorno Nardelli pseudohydric functional DFT $+U$实现密度泛函的$V$和获得不同的散装材料的带隙准确的那些从$GW$或混合泛函方法与标准DFT计算成本。此外,我们还计算了几层黑磷和Si(111)-($2\times1$)表面的带隙,计算结果与实验结果吻合得很好,从而为大规模、高通量的高精度计算提供了新的方法。

英文摘要:

For fast and accurate calculations of band gaps of solids, we present an {\it ab initio} method that extends the density functional theory plus on-site Hubbard interaction (DFT+$U$) to include inter-site Hubbard interaction ($V$). This formalism is appropriate for considering various interactions such as a local Coulomb repulsion, covalent hybridizations, and their coexistence in solids. To achieve self-consistent evaluations of $U$ and $V$, we adapt a recently proposed Agapito-Curtarolo-Buongiorno Nardelli pseudohybrid functional for DFT$+U$ to implement a density functional of $V$ and obtain band gaps of diverse bulk materials as accurate as those from $GW$ or hybrid functionals methods with a standard DFT computational cost. Moreover, we also show that computed band gaps of few layers black phosphorous and Si(111)-($2\times1$) surface agree with experiments very well, thus meriting the new method for large-scale as well as high throughput calculations with higher accuracy.

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