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arXiv 1901.09256cond-mat.mtrl-sci
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通过同步磁场和电流的畴壁运动检测重金属\ferromagnet结构中的低自旋极化

Low spin-polarization in the heavy metal\ferromagnet structures detected through the domain wall motion by synchronized magnetic field and current

Xueying Zhang, Nicolas Vernier, Laurent Vila, Shaohua Yan1, Zhiqiang Cao, Anni Cao, Zilu Wang, Wenlong Cai, Yang Liu, Huaiwen Yang, Dafiné Ravelosona, Weisheng Zhao

摘要:

CoFeB是一种非常软的材料,在弱磁场作用下,磁畴壁(DW)很容易移动。然而,在具有界面垂直磁各向异性的Ta \CoFeB \MgO纳米线中,很难通过自旋极化电流来移动DW,这限制了面内电流机制驱动赛道存储器的前景。为了研究这一现象,我们进行了实验的DW速度测量通过同时施加磁场和电流。在旋进区工作,我们已经能够看到自旋极化电流的非常重要的影响,这允许评估载流子的极化率。得到了一个非常低的自旋极化率,只有0.26,这可以解释由自旋极化电流引起的DW运动的低效率。这种低速率的可能原因进行了分析,如在Ta层的自旋弛豫。

英文摘要:

CoFeB is a very soft material, in which Domain Wall (DW) can be moved easily under a weak magnetic field. However, it is very difficult to move DWs in Ta\CoFeB\MgO nanowires with interfacial perpendicular magnetic anisotropy through a spin-polarized current, and this limits the perspectives of racetrack memory driven by the current-in-plane mechanism. To investigate this phenomenon, we performed experiments of DW velocity measurement by applying a magnetic field and a current simultaneously. Working in the precessional regime, we have been able to see a very important effect of the spin-polarized current, which allows evaluating the polarization rate of the charge carriers. An unexpected quite low spin polarization rate down to 0.26 have been obtained, which can explain the low efficiency of DW motion induced by the spin-polarized current. Possible reasons for this low rate are analyzed, such as the spin relaxation in the Ta layer.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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