铁磁纳米环中$360^\circ$畴壁的位存储
Bit storage by $360^\circ$ domain walls in ferromagnetic nanorings
摘要：
我们提出了一种设计的磁性存储单元，它允许一个有效的存储，记录和读出的基础上的薄膜铁磁纳米环的信息。信息位由引入环中的稳定的360 ° $^\circ$畴壁的极性表示。两种磁化状态之间的切换通过施加到穿过环的导线的电流来实现，由此$360^\circ$畴壁分裂成两个带电的$180^\circ$壁，其然后移动到环的相对端以重新组合成相反极性的$360^\circ$壁。
英文摘要：
We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable 360$^\circ$ domain wall introduced into the ring. Switching between the two magnetization states is achieved by the current applied to a wire passing through the ring, whereby the $360^\circ$ domain wall splits into two charged $180^\circ$ walls, which then move to the opposite extreme of the ring to recombine into a $360^\circ$ wall of the opposite polarity.
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