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arXiv 0909.3831cond-mat.mes-hallcond-mat.mtrl-sci
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铁磁半导体$2π$和$π$畴壁的自旋矩和电荷电阻

Spin torque and charge resistance of ferromagnetic semiconductor $2π$ and $π$ domain walls

E. A. Golovatski, M. E. Flatté

摘要:

电荷电阻和自旋扭矩产生的相干载流子传输通过铁磁360度畴壁,虽然他们遵循定性不同的趋势比180度畴壁。360度畴壁的电荷电阻在中间壁厚处达到最大值,不像180度畴壁,其电阻随壁厚单调减小。的自旋扭矩的峰值振幅和最佳的畴壁的厚度,以最大限度地提高扭矩为360度的壁是两倍以上的发现为180度的畴壁在相同的材料,产生较大的畴壁速度为360度的壁,并提出意想不到的非线性磁电子器件纳入畴壁运动。

英文摘要:

Charge resistance and spin torque are generated by coherent carrier transport through ferromagnetic 360 degree domain walls, although they follow qualitatively different trends than for 180 degree domain walls. The charge resistance of 360 degree domain walls reaches a maximum at an intermediate wall thickness, unlike 180 degree domain walls, whose resistance decreases monotonically with wall thickness. The peak amplitude of the spin torque and the optimal thickness of the domain wall to maximize torque for a 360 degree wall are more than twice as large as found for a 180 degree domain wall in the same material, producing a larger domain wall velocity for the 360 degree wall and suggesting unexpected nonlinearities in magnetoelectronic devices incorporating domain wall motion.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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