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arXiv 0904.4159cond-mat.mes-hall
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电阻反馈对纳米磁体自旋矩诱导开关的影响

Effect of resistance feedback on spin torque-induced switching of nanomagnets

Samir Garzon, Richard A. Webb, Mark Covington, Shehzaad Kaka, Thomas M. Crawford

摘要:

在大磁阻器件中,自旋力矩引起的电阻变化可以产生GHz的电流和电压振荡,这可以影响磁化反转。此外,大电阻器件中的电容分流可以进一步减小电流,从而不利地影响自旋扭矩切换。在这里,我们同时解决的Landau-Lifshitz-Gilbert方程的自旋力矩和传输线电报员的方程研究的自旋阀和磁性隧道结的磁化反转的电阻反馈和电容的影响。虽然对于自旋阀,由于自旋力矩的饱和,平行(P)到反平行(AP)的切换受到电阻反馈的不利影响,但在低电阻磁性隧道结中,P-AP切换被增强。我们研究了电阻反馈对MTJ的开关时间的影响,并表明磁化开关只受pF范围内的电容分流的影响。

英文摘要:

In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of MTJ's, and show that magnetization switching is only affected by capacitive shunting in the pF range.

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