We theoretically investigate a new kind of nonlinear magnetoresistance on the surface of three-dimensional topological insulators (TIs). At variance with the unidirectional magnetoresistance (UMR) effect in magnetic bilayers, this nonlinear magnetoresistance does not rely on a conducting ferromagnetic layer and scales linearly with both the applied electric and magnetic fields; for this reason, we name it bilinear magneto-electric resistance (BMER). We show that the sign and the magnitude of the BMER depends sensitively on the orientation of the current with respect to the magnetic field as well as the crystallographic axes -- a property that can be utilized to map out the spin texture of the topological surface states via simple transport measurement, alternative to the angle-resolved photoemission spectroscopy (ARPES).
Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, we report the observation of bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that both the amplitude and sign of this BMR can be tuned by controlling, with an electric gat…
We demonstrate the presence of an important anisotropic magnetoresistance contribution to the domain wall resistance recently measured in thin-film (Ga,Mn)As with in-plane magnetic anisotropy. Analytic results for simple domain wall orientations supplemented by numerical results for more general cases show this previously omitted contribution can largely explain the observed negative resistance.
We analyze in this article the magneto-resistance ratio of finite and infinite iridium and platinum chains. Our calculations, that are based on a combination of non equilibrium Green function techniques and density functional theory, include a fully self-consistent treatment of non-collinear magnetism and of the spin-orbit interaction. They indicate that, in addition to having an extremely large magnetic anisotropy that may overcome the super-paramagnetic limit, infinite and also realistic finite-length iridium chains show sizeable anisotropic magnetoresistance ratios. We therefore propose iri…
A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases.
It is shown that the current-perpendicular-to-plane giant magneto-resistance (CPP-GMR) oscillations, in the ballistic regime, are strongly correlated with those of the exchange coupling (J). Both the GMR and J are treated on equal footing within a rigorously solvable tight-binding single-band model. The strong correlation consists in sharing asymptotically the same period, determined by the spacer Fermi surface, and oscillating with varying spacer thickness predominantly in opposite phases.
We report magneto-transport studies of topological insulator Bi_{2}Te_{3} thin films grown by pulsed laser deposition. A non-saturating linear-like magneto-resistance (MR) is observed at low temperatures in the magnetic field range from a few Tesla up to 60 Tesla. We demonstrate that the strong linear-like MR at high field can be well understood as the weak antilocalization phenomena described by Hikami-Larkin-Nagaoka theory. Our analysis suggests that in our system, a topological insulator, the elastic scattering time can be longer than the spin-orbit scattering time. We briefly discuss our r…
We demonstrate a simple, low cost, magneto-transport method for rapidly characterizing the magnetic anisotropy and anisotropic magneto-resistance (AMR) of ferromagnetic devices with uniaxial magnetic anisotropy. This transport technique is the analogue of magnetic susceptibility measurements of bulk material but is applicable to very small samples with low total moment. The technique is used to characterize devices fabricated from the dilute magnetic semiconductor (Ga,Mn)As. The technique allows us to probe the behavior of the parameters close to the Curie temperature, in the limit of the appl…
We propose that charge gradient resulting in the coexisting magneto-resistance and-capacitance tunability in material systems. We have experimentally observed coexisting of tunable magneto-resistance and -capacitance in Sm2Ga2Fe2O9. Our model fits well with the experimental result.
We theoretically study the magnetoresistance of a CPP-GMR system with current confined paths (CCP) in the framework of Valet-Fert theory. The continuity equations for charge and spin currents are numerically solved with the three-dimensional CCP geometry by use of finite element method. It is confirmed that the MR ratio is enhanced by the CCP structure, which is consistent with the experimental results. Moreover, we find that there exists a certain contact width which maximize the MR ratio. We show that the contact width which maximize the MR ratio is well described by the effective resistance…
The relation between tunnel magneto-resistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin-orbit interactions. TMR is calculated using Landauer approach. The materials are described in the 6 band $\bf {k}\cdot \bf{p}$ model which includes spin orbit interaction. Ferromagnetism is described in the virtual crystal mean field approximations. Our results indicate that TMR is a function of of spin polarization and barrier thickness. As a result of the stong spin orbit interactions, TMR also depends on the the angle between cu…
We investigate the transport properties of pristine zigzag-edged borophene nanoribbons (ZBNRs) of different widths, using the fist-principles calculations. We choose ZBNRs with widths of 5 and 6 as odd and even widths. The differences of the quantum transport properties are found, where even-N BNRs and odd-N BNRs have different current-voltage relationships. Moreover, the negative differential resistance (NDR) can be observed within certain bias range in 5-ZBNR, while 6-ZBNR behaves as metal whose current rises with the increase of the voltage. The spin filter effect of 36% can be revealed whe…
We report a metal-insulator like transition in single crystalline 3D topological insulator Bi2Te3 at a temperature of 230K in presence of an external magnetic field applied normal to the surface. This transition becomes more prominent at larger magnetic field strength with the residual resistance value increasing linearly with the magnetic field. At low temperature, the magnetic field dependence of the magnetoresistance shows a transition from logarithmic to linear behavior and the onset magnetic field value for this transition decreases with increasing temperature. The logarithmic magnetoresi…
Weyl semi-metal is the three dimensional analog of graphene. According to the quantum field theory, the appearance of Weyl points near the Fermi level will cause novel transport phenomena related to chiral anomaly. In the present paper, we report the first experimental evidence for the long-anticipated negative magneto-resistance generated by the chiral anomaly in a newly predicted time-reversal invariant Weyl semi-metal material TaAs. Clear Shubnikov de Haas oscillations (SdH) have been detected starting from very weak magnetic field. Analysis of the SdH peaks gives the Berry phase accumulate…
Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The crystallographic directions of the bP crystal were determined by Raman spectroscopy, with the zigzag axis found within 5° of the S-D axis, and the armchair axis in the orthogonal planar direction. A transverse magneto-resistance (TMR) as well as a classically-forbidden longitudinal magneto-resistance (LMR) are observed. Both are found to be strongly anisotropic and non-m…
We present a scaling theory of magneto-transport in Anderson-localized disordered ferromagnets. Within our framework a pronounced magnetic-field-sensitive resistance peak emerges naturally for temperatures near the magnetic phase transition. We find that the resistance anomaly is a direct consequence of the change in localization length caused by the magnetic transition. For increasing values of the external magnetic field, the resistance peak is gradually depleted and pushed towards higher temperatures. Our results are in good agreement with magneto-resistance measurements on a variety of dis…
Combining the Su-Schrieffer-Heeger model and the non-equilibrium Green's function formalism, we investigate the negative differential resistance effect in organic spintronics at low temperature and interprete it with a self-doping picture. A giant negative magnetoresistance exceeding 300% is theoretically predicted as the results of the negative differential resistance effects.
We investigate a semiclassical conductance for ballistic open three-dimensional (3-d) billiards. For partially or completely broken-ergodic 3-d billiards such as SO(2) symmetric billiards, the dependence of the conductance on the Fermi wavenumber is dramatically changed by the lead orientation. Application of a symmetry-breaking weak magnetic field brings about mixed phase-space structures of 3-d billiards which ensures a novel Arnold diffusion that cannot be seen in 2-d billiards. In contrast to the 2-d case, the anomalous increment of the conductance should inevitably include a contribution …
We have studied the domain wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness is varied to control the type of domain walls via changes in the interfacial Dzyaloshinskii Moriya interaction. We find a nearly constant domain wall resistance against the Ta layer thickness. Adding contributions from the anisotropic magnetoresistance, spin Hall magnetoresistance and anomalous Hall effect describe well the domain wall resistance of the thick Ta layer films. However, a discrepancy remains for the thin Ta layer films wherein chiral Néel-like domain walls are found. These result…
We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO$_3$ (LCO) ferromagnetic insulator films. The LaCoO$_3$ films were deposited on several single crystalline substrates [LaAlO$_3$ (LAO), (La,Sr)(Al,Ta)O$_3$ (LSAT), and SrTiO$_3$ (STO)] with (001) orientation. The physical properties of LaCoO$_3$ films were characterized by the measurements of magnetic and transport properties. The LaCoO$_3$ films undergo a paramagnetic to ferromagnetic (FM) transition at Curie temperatures ranging from 40 K to 85 K, below which the …
The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of disordered F/N/F perpendicular spin valves as a function of the angle between magnetization vectors is shown to obey a simple universal law. The spin-current induced magnetization torque can be measured by the angular magnetoresistance of these spin valves. The results are generalized to arbitrary magnetoelectronic circuits.
Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy (STEM), and energy dispersive spectroscopy (EDS) mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy…
Bulk metallic samples were synthesized from different binary powder mixtures consisting of elemental Cu, Co, and Fe using severe plastic deformation. Small particles of the ferromagnetic phase originate in the conductive Cu phase, either by incomplete dissolution or by segregation phenomena during the deformation process. These small particles are known to give rise to granular giant magnetoresistance. Taking advantage of the simple production process, it is possible to perform a systematic study on the influence of processing parameters and material compositions on the magneto-resistance. Fur…
In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the Néel vector. We investigate the magnetoresistance effects resulting from magnetic field induced reorientations of the staggered magnetization of epitaxial antiferromagnetic Mn2Au(001) thin films. The samples were exposed to 60 T magnetic field pulses along different crystallographic in-plane directions of Mn2Au(001), while their resistance was measured. For the staggered magnetization aligned via a spin-flop t…
In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect of rotating \textit{in-situ} the electric field of linearly polarized microwaves relative to the current, on the microwave-radiation-induced magneto-resistance oscillations. We find that the frequency and the phase of the photo-excited magneto-resistance oscillations are insensitive to the polarization. On the other hand, the amplitudes of the magnetoresistance oscillations are remarkably responsive to the relative orientation between the microwave antenna and the current-axis in the specimen. The results suggest a stri…
We study magneto-transport properties in single crystals of TaSb_2, which is a recently discovered topological semimetal. In the presence of magnetic field, the electrical resistivity shows onset of insulating behaviour followed by plateau at low temperature. Such resistivity plateau is generally assigned to topological surface states. TaSb2 exhibits extremely high magneto-resistance with non-saturating field dependence. We find that aspects of extremely large magneto resistance and resistivity plateau are well accounted by classical Kohler scaling. Unambiguous evidence for anomalous Chiral tr…
In this paper we report an enhanced temperature coefficient of resistance (TCR) close to room temperature in La0.7Ca0.3-xBaxMnO3 + Agy (x = 0.10, 0.15 and y = 0.0 to 0.40) (LCBMO+Ag) composite manganites. The observed enhancement of TCR is attributed to the grain growth and opening of new conducting channels in the composites. Ag addition has also been found to enhance intra-granular magneto-resistance. Inter-granular MR, however, is seen to decrease with Ag addition. The enhanced TCR and MR at / near room temperature open up the possibility of the use of such materials as infrared bolometric …
The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO microwires showed a non monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implan…
Magneto resistance measurements coupled with positron lifetime measurements, to characterize the vacancy type defects, have been carried out on the topological insulator (TI) system Bi2Se3, of varying Se/Bi ratio. Pronounced Shubnikov de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K to 10 K temperature range, with field applied perpendicular to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se …
In this paper we show spin dependent transport experiments in nanoconstrictions ranging from 30 to 200nm. These nanoconstrictions were fabricated combining electron beam lithography and thin film deposition techniques. Two types of geometries have been fabricated and investigated. We compare the experimental results with the theoretical estimation of the electrical resistance. Finally we show that the magnetoresistance for the different geometries does not scale with the resistance of the structure and obtain drops in voltage of 20mV at 20Oe.
Magnetoresistance and Hall resistance measurements have been carried out in fastcooled single crystals of Bi2Se3-xTex (x: 0 to 2) in 4 to 300 K temperature range, under magnetic fields up to 15 T. The variation of resistivity with temperature that points to a metallic behaviour in Bi2Se3, shows an upturn at low temperatures in the Te doped samples. Magnetoresistance measurements in Bi2Se3 show clear signatures of Shubnikov de Hass oscillations that gets suppressed in the Te doped samples. In the Bi2SeTe2 sample, the magneto-resistance shows a cusp like positive magneto-resistance at low magnet…
In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall angle or the anomalous Hall angle is not small. Using the proper conductivity relation, we reveal an unexpected magnetoresistance (MR) induced by the anomalous Hall effect (AHE). A $B$-linear MR arises and the sign of the slope depends on the sign of the anomalous Hall angle, giving rise to a characteristic bowtie shape. The Hall resistance in a single-band syst…
We report the anisotropic magneto-transport measurement on a non-compound band semiconductor black phosphorus (BP) with magnetic field B up to 16 Tesla applied in both perpendicular and parallel to electric current I under hydrostatic pressures. The BP undergoes a topological Lifshitz transition from band semiconductor to a zero-gap Dirac semimetal state, characterized by a weak localization-weak antilocaliation transition at low magnetic fields and the emergence of a nontrivial Berry Phase of detected by SdH magneto-oscillations in magnetoresistance curves. In the transition region, we observ…
(withdrawn)AC resistance of melt-spun granular magnetic Cu85Co15 ribbons was measured as a function of temperature in the range 5-300 K, magnetic field Hdc in the range -60 kOe to 60 kOe, and frequency in the range 1-1000 Hz. A sharp peak of zero-field resistance, which scales with frequency, and an associated isotropic giant AC magnetoresistance in small fields are observed around the temperature of collective freezing of interacting magnetic moments. Anomalous behavior of AC resistance in large fields (Hdc > 20 kOe) is observed in a much broader temperature range. This effect is not only fre…
In this work, the magneto-resistance (MR) of ultra-thin WTe2/BN heterostructures far away from electron-hole equilibrium is measured. The change of MR of such devices is found to be determined largely by a single tunable parameter, i.e. the amount of imbalance between electrons and holes. We also found that the magnetoresistive behavior of ultra-thin WTe2 devices is well-captured by a two-fluid model. According to the model, the change of MR could be as large as 400,000%, the largest potential change of MR among all materials known, if the ultra-thin samples are tuned to neutrality when preser…
The objective of this work is to describe the tunnel electron current in single barrier magnetic tunnel junctions within a new approach that goes beyond the single-band transport model. We propose a ballistic multi-channel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single crystal magnetic Fe(110) electrodes for Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ tunnel junctions, where the electronic band structures of Fe and La$_{0.67}$Sr$_…
An electric method for measuring magnetic anisotropy in antiferromagnetic insulators (AFIs) is proposed. When a metallic film with strong spin-orbit interactions, e.g., platinum (Pt), is deposited on an AFI, its resistance should be affected by the direction of the AFI N eel vector due to the spin Hall magnetoresistance (SMR). Accordingly, the direction of the AFI N eel vector, which is affected by both the external magnetic field and the magnetic anisotropy, is reflected in resistance of Pt. The magnetic field angle dependence of the resistance of Pt on AFI is calculated by consider- ing the …
We synthesized nonmagnetic PtBi$_2$ single crystals and observed a giant linear magneto-resistance (MR) up to 684\% under a magnetic field $μ_0H$ = 15 T at $T$ = 2 K. The linear MR decreases with increasing temperature, but it is still as large as 61\% under $μ_0H$ of 15 T at room temperature. Such a giant linear MR is unlikely to be described by the quantum model as the quantum condition is not satisfied. Instead, we found that the slope of MR scales with the Hall mobility, and it can be well explained by a classical disorder model.
Employing a new experimental technique to measure magnetoelectric response functions, we have measured the magnetoelectric effect in composite films of nano granular metallic iron in anatase titanium dioxide at temperatures below 50 K. A magnetoelectric resistance is defined as the ratio of a transverse voltage to bias current as a function of the magnetic field. In contrast to the anomalous Hall resistance measured above 50 K, the magnetoelectic resistance below 50 K is significantly larger and exhibits an even symmetry with respect to magnetic field reversal $H\to -H$. The measurement techni…
We report the synthesis, (micro)structural, magneto-transport and magnetization of polycrystalline La2/3Ca1/3MnO3:Agx composites with x = 0.0, 0.1, 0.2, 0.3 and 0.4. The temperature coefficient of resistance (TCR) near ferromagnetic (FM) transition is increased significantly with addition of Ag. The FM transition temperature (TFM) is also increased slightly with Ag addition. Magneto-transport measurements revealed that magneto-resistance MR is found to be maximum near TFM. Further the increased MR of up to 60% is seen above 300 K for higher silver added samples in an applied field of 7 Tesla. …
The resistive and reactive components of magneto-impedance (MI) for Finemet/Copper/Finemet sandwiched structures based on stress-annealed nanocrystalline Fe75Si15B6Cu1Nb3 ribbons as functions of different fields (longitudinal and perpendicular) and frequencies have been measured and analyzed. Maximum magneto-resistance and magneto-inductance ratios of 700% and 450% have been obtained in 30-600 kHz frequency range respectively. These large magneto-resistance and magneto-inductive ratios are a direct consequence of the large effective relative permeability due to the closed magnetic flux path in…
Bulk samples of carbon multilayer nanotubes with the structure of nested cones (fishbone structure) suitable for transport measurements, were prepared by compressing under high pressure (~25 kbar) a nanotube precursor synthesized through thermal decomposition of polyethylene catalyzed by nickel. The structure of the initial nanotube material was studied using high-resolution transmission electron microscopy. In the low-temperature range (4.2 - 100 K) the electric resistance of the samples changes according to the law ln ρ~ (T_0/T)^{1/3}, where T_0 ~ 7 K. The measured magnetoresistance is quadr…
Tunneling magnetoresistance (TMR) in a vertical manganite junction was investigated by low-temperature scanning laser microscopy (LTSLM) allowing to determine the local relative magnetization M orientation of the two electrodes as a function of magnitude and orientation of the external magnetic field H. Sweeping the field amplitude at fixed orientation revealed magnetic domain nucleation and propagation in the junction electrodes. For the high-resistance state an almost single-domain antiparallel magnetization configuration was achieved, while in the low-resistance state the junction remained …
We have performed a study of the magnetic, magnetoelastic, and corrosion resistance properties of seven different composition magnetoelastic-resonant platforms. For some applications, such as structural health monitoring, these materials must have not only good magnetomechanical properties, but also a high corrosion resistance. In the fabricated metallic glasses of composition Fe(73-x)NixCr5Si10B12, the Fe/Ni ratio was varied (Fe + Ni = 73% at.) thus changing the magnetic and magnetoelastic properties. A small amount of chromium (Cr5) was added in order to achieve the desired good corrosion re…
Simultaneous MOKE imaging and measurement of magneto-resistance with vector magnet: a low noise customized setup for low field magnetic devices and thin films characterization
Driven by low-cost, resource abundance and distinct material properties, the use of paper in electronics, optics and fluidics is under investigation. Considering sensor systems based on magneto-resistance principles (anisotropic, giant, tunnel) that are conventionally manufactured onto inorganic semiconductor materials, we propose the use of paper substrates for cost reduction purposes primarily. In particular, we studied the magneto-resistance sensitivity of permalloy (Py:Ni81Fe19) onto paper substrates. In this work, we report on our findings with clean room paper (80 g/m2, Rrms = 2.877 μm, …
We theoretically studied spin dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of GMR. This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones despite lamination induce…
Thermal switching provides an effective way for active heat flow control, which has recently attracted increasing attention in terms of nanoscale thermal management technologies. In magnetic and spintronic materials, the thermal conductivity depends on the magnetization configuration: this is the magneto-thermal resistance effect. Here we show that an epitaxial Cu/Co$_{50}$Fe$_{50}$ multilayer film exhibits giant magnetic-field-induced modulation of the cross-plane thermal conductivity. The magneto-thermal resistance ratio for the Cu/Co$_{50}$Fe$_{50}$ multilayer reaches 150% at room temperatu…
To understand the near-interface magnetism in manganites, uniform, ultra-thin films of La_{0.67}Sr_{0.33}MnO_3 were grown epitaxially on single crystal (001) LaAlO_3 and (110) NdGaO_3 substrates. The temperature and magnetic field dependent film resistance is used to probe the film's structural and magnetic properties. A surface and/or interface related dead-layer is inferred from the thickness dependent resistance and magnetoresistance. The total thickness of the dead layer is estimated to be $\sim 30 Å$ for films on NdGaO_3 and $\sim 50 Å$ for films on LaAlO_3.
The confinement of the two dimensional electron gas (2DEG), preferential occupancy of the Ti 3d orbital and strong spin-orbit coupling at the LaAlO$_3$/SrTiO$_3$ interface play a significant role in its emerging properties. Here we report a fourfold oscillation in the anisotropic magneto resistance (AMR) and the observation of planar Hall effect (PHE) at the LaAlO$_3$/SrTiO$_3$ heterointerface. We evaluate the carrier confinement effects on the AMR and find that the fourfold oscillation appears only for the case of 2DEG system while it is twofold for the 3D system. As the fourfold oscillation …
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become comparable. Below metal-insulator transition we found giant anisotropic magnetoresistance (GAMR), which depends on orientation of magnetization to crystallographic axes and manifests itself in positive magnetoresistance near 50% for Rxx at T=1.7K, H//[110] crystallographic direction and parallel to current in contrast to smaller and negative magnetoresistance for H//…
We report synthesis, structural details and electrical transport properties of topological insulator Bi2Te3. The single crystalline specimens of Bi2Te3 are obtained from high temperature (950C) melt and slow cooling (2C/hour). The resultant crystals were shiny, one piece (few cm) and of bright silver color. The Bi2Te3 crystal is found to be perfect with clear [00l] alignment. The powder XRD pattern being carried out on crushed crystals showed that Bi2Te3 crystallized in R3m symmetry with a = b = 4.3866(2) A, c = 30.4978(13) A and Gamma = 120degree. The Bi position is refined to (0, 0, 0.4038 (…
