We report a metal-insulator like transition in single crystalline 3D topological insulator Bi2Te3 at a temperature of 230K in presence of an external magnetic field applied normal to the surface. This transition becomes more prominent at larger magnetic field strength with the residual resistance value increasing linearly with the magnetic field. At low temperature, the magnetic field dependence of the magnetoresistance shows a transition from logarithmic to linear behavior and the onset magnetic field value for this transition decreases with increasing temperature. The logarithmic magnetoresistance indicates the weak anti-localization of the surface Dirac electrons while the high temperature behavior originates from the bulk carriers due to intrinsic impurities. At even higher temperatures beyond~230 K, a completely classical Lorentz model type quadratic behavior of the magnetoresistance is observed. We also show that the experimentally observed anomalies at ~230K in the magneto-transport properties do not originate from any stacking fault in Bi2Te3.
Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read-heads. We show that a colossal non-saturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field reaching nearly 10,000% at 8 Tesla, thus surpassing many known non-magnetic materials that exhibit gian…
The rapidly expanding class of quantum materials known as {\emph{topological semimetals}} (TSM) display unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for both scientific and technological reasons. However, experimental signatures that can identify or discern the dominant mechanism and connect to available theories are scarce. Here we present the magnetic susceptibility ($χ$), the tangent of the Hall angle ($\tanθ_H$) along with magnetoresistance in four different non-magnetic semimetals with high mobilities, Nb…
Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers.…
We present a theoretical description of the interlayer magnetoresistance in the layered Dirac fermion system with the application to the organic conductor α-(BEDT-TTF)_2I_3 under pressure. Assuming a non-vertical interlayer tunneling and including higher Landau level effects we calculate the interlayer conductivity using the Kubo formula.We propose a physical picture of the experimentally observed crossover from the negative interlayer magnetoresistance, where the Dirac fermion zero-energy Landau level plays a central role, to the positive interlayer magnetoresistance that is the consequence o…
Recently discovered Dirac and Weyl semimetals display unusual magnetoresistance phenomena, including a large, non-saturating, linear transverse magnetoresistance and a negative longitudinal magnetoresistance. The latter is often considered as evidence of fermions having a defined chirality. Classical mechanisms, due to disorder or non-uniform current injection, can however, also produce negative longitudinal magnetoresistance. Here, we report on magnetotransport measurements performed on epitaxial thin films of Cd3As2, a three-dimensional Dirac semimetal. Quasi-linear positive transverse magne…
ZrTe5 is a layered material that exhibits intricate topological effects. Intensive theoretically and experimental efforts have been devoted to try to understand the physics in this materials. In this paper the temperature dependent magneto-transport properties of ZrTe5 thin flakes are investigated. A characteristic temperature T* is observed in the temperature dependence of three different types of magnetoresistance simultaneously, which are the saturated Hall anomaly, the chiral anomaly and the longitudinal magnetoresistance. Furthermore, the value of T* decreases monotonically from 200K to 1…
Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through MgO barriers is only beginning to be unravelled. Using planar magnetic tunnel junctions in which ultra-thin layers of magnetic metals are deposited in the middle of a MgO tunnel barrier here we demonstrate that the TMR is strongly modified when these layers are discontinuous and composed of small pancake shaped nanodots. At low temperatures, in the Coulomb …
Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in both disorder- and interaction-dominated regimes. The phenomenon originates in the excess quasiparticle density developing near the edges of the sample due to the compensated Hall effect. The size of the boundary region is of the order of the electron-hole recombination length that is inversely proportional to the magnetic field. In narrow samples and at stro…
The chalcogenide Bi$_2$Se$_3$ can attain the three dimensional (3D) Dirac semimetal state under the influence of strain and microstrain. Here we report the presnece of large linear magnetoresistance in such a Bi$_2$Se$_3$ crystal. The magnetoresistance has quadratic form at low fields which crossovers to linear above 4 T. The temperature dependence of magnetoresistance scales with carrier mobility and the crossover field scales with inverse of mobility. Our analysis suggest that the linear magnetoresistance in our system has a classical origin and arises from the scattering of high mobility 3D…
Since the discovery of extremely large non-saturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large non-saturating MR through in-situ tuning of the magneto-transport properties in thin WTe2 film. With an electrostatic doping approach, we observed a non-monotonic gate dependence of the MR. The MR reaches a maximum (10600%) in thin WTe2 film at certain gate voltage where electron and hole concentrations are balanced, indicating that the cha…
A positive, non-saturating and dominantly linear magnetoresistance is demonstrated to occur in the surface state of a topological insulator having a wavevector-linear energy dispersion together with a finite positive Zeeman energy splitting. This linear magnetoresistance shows up within quite wide magnetic-field range in a spatially homogenous system of high carrier density and low mobility in which the conduction electrons are in extended states and spread over many smeared Landau levels, and is robust against increasing temperature, in agreement with recent experimental findings in Bi$_2$Se$…
The discovery of graphene has ignited intensive investigation on two dimensional (2D) materials. Among them, transition metal dichalcogenide (TMDC), a typical representative, attracts much attention due to the excellent performance in field effect transistor (FET) related measurements and applications. Particularly, when TMDC eventually reaches few-layer dimension, a wide range of electronic and optical properties, in striking contrast to bulk samples, are detected. In this Letter, we synthesized single crystalline WS2 nanoflakes by physical vapor deposition (PVD) method and carried out a seri…
We investigate the monotonic growth of longitudinal interlayer magnetoresistance $\bar{R}_{zz}(B_z) $, analytically and numerically in the self-consistent Born approximation. We show that in a weak magnetic field the monotonic part of $\bar{R}_{zz}(B_z)$ is almost constant and starts to grow only above the crossover field $B_{c}$, when the Landau levels (LL) become isolated, i.e. when the LL separation becomes greater than the LL broadening. In higher field $B_{z}>>B_{c}$, $\bar{R}_{zz}(B_{z}) \propto B_{z}^{1/2}$ in agreement with previous works.
We report the large linear magnetoresistance ($\sim 300\%$ in 9 T field at 2 K) and magnetothermopower in layered SrZnSb$_2$ crystal with quasi-two-dimensional Sb layers. A crossover from the semiclassical parabolic field dependent magnetoresistance to linear field dependent magnetoresistance with increasing magnetic field is observed. The magnetoresistance behavior can be described very well by combining the semiclassical cyclotron contribution and the quantum limit magnetoresistance. Magnetic field also enhances the thermopower. Our results can be well understood by the magnetotransport of D…
Cd3As2 is a model material of Dirac semimetal with a linear dispersion relation along all three directions in the momentum space. The unique band structure of Cd3As2 makes it with both Dirac and topological properties. It can be driven into a Weyl semimetal by the symmetry breaking or a topological insulator by enhancing the spin-orbit coupling. Here we report the temperature and gate voltage dependent magnetotransport properties of Cd3As2 nanoplates with Fermi level near the Dirac point. The Hall anomaly demonstrates the two-carrier transport accompanied by a transition from n-type to p-type …
Quantum materials harbor a cornucopia of exotic transport phenomena challenging our understanding of condensed matter. Among these, a giant, non-saturating linearmagnetoresistance (MR) has been reported in various systems, from Weyl semi-metals to topological insulators. Its origin is often ascribed to unusual band structure effects but it may also be caused by extrinsic sample disorder. Here, we report a very large linear MR in a SrTiO$_3$ two-dimensional electron gas and, by combining transport measurements with electron spectro-microscopy, show that it is caused by nanoscale inhomogeneities…
Disorder-induced magnetoresistance has been reported in a range of solid metals and semiconductors, however, the underlying physical mechanism is still under debate because it is difficult to experimentally control. Liquid metals, due to lack of long-range order, offers an ideal model system where many forms of disorder can be deactivated by freezing the liquid. Here we report non-saturating magnetoresistance discovered in the liquid state of three metals: Ga, Ga-In-Sn and Bi-Pb-Sn-In alloys. The giant magnetoresistance appears above the respective melting points and has a maximum of 2500% at …
We report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. The Hall data reveals electron-type carriers and a mobility mu(5K) =1500cm2/Vs. The temperature dependence of magnetization displays behavior that is different from CaMnBi2 or SrMnBi2 , which suggests the possible different magnetic structure of BaMnBi2. Angle-dependent magnetoresistance reveals the quasi-two-dimensional Fermi surface. A crossover from semiclassical MR-H2 dependence in low field to MR-H dependence in high field is observed in transverse magnetoresistance.…
Linear nonsaturating magnetoresistance (LMR) represents a class of anomalous resistivity response to external magnetic field that has been observed in a variety of materials including but not limited to topological semi-metals, high-Tc superconductors and materials with charge/spin density wave (CDW/SDW) orders. Here we report the observation of LMR in layered kagome superconductor and CDW material CsV3Sb5 thin flakes, as well as the dimensional crossover and temperature (T) crossover of such LMR. Specifically, in ultrathin CsV3Sb5 crystals, the magnetoresistance (MR) exhibits a crossover from…
We report a detailed magneto-transport study in single crystals of NbP. High quality crystals were grown by vapour transport method. An exceptionally large magnetoresistance is confirmed at low temperature which is non-saturating and is linear at high fields. Models explaining the linear magnetoresistance are discussed and it is argued that in NbP this is linked to charge carrier mobility fluctuations. Negative longitudinal magnetoresistance is not seen, unlike several other Weyl monopnictides, suggesting lack of well defined chiral anomaly in NbP. Unambiguous Shubnikov-de-Haas oscillations ar…
We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi2Se2Te and BiSbTeSe1.6 were grown using Pulsed Laser Deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction c…
Magnetoresistance in many samples of Dirac semimetal and topological insulator displays non-monotonic behaviors over a wide range of magnetic field. Here a formula of magnetoconductivity is presented for massless and massive Dirac fermions in Dirac materials due to quantum interference in scalar impurity scattering potentials. It reveals a striking crossover from positive to negative magnetoresistivity, uncovering strong competition between weak localization and weak antilocalization in multiple Cooperon modes at different chemical potentials, effective masses and finite temperatures. The work…
Electron conductance in planar magnetic tunnel junctions with long-range barrier disorder is studied within Glauber-eikonal approximation enabling exact disorder ensemble averaging by means of the Holtsmark-Markov method. This allows us to address a hitherto unexplored regime of the tunneling magnetoresistance effect characterized by the crossover from momentum-conserving to random tunneling as a function of the defect concentration. We demonstrate that such a crossover results in a reentrant magnetoresistance: It goes through a pronounced minimum before reaching disorder- and geometry-indepen…
Ultra-thin Pt films grown on insulating ferrimagnetic CoFe2O4 (111) epitaxial films display a magnetoresistance upon rotating the magnetization of the magnetic layer. We report here X-ray magnetic circular dichroism (XMCD) recorded at Pt-L2,3 and Pt-M3 edges. The results indicate that the Pt magnetic moment, if any, is below the detection limit (< 0.001 μ$_B$/Pt), thus strongly favoring the view that the presence of CoFe2O4 does not induce the formation of magnetic moments in Pt. Therefore, the observed magnetoresistance cannot be attributed to some sort of proximity-induced magnetic moments a…
The electronic origin of a large resistance change in nanoscale junctions incorporating spin crossover molecules is demonstrated theoretically by using a combination of density functional theory and the non-equilibrium Green's functions method for quantum transport. At the spin crossover phase transition there is a drastic change in the electronic gap between the frontier molecular orbitals. As a consequence, when the molecule is incorporated in a two terminal device, the current increases by up to four orders of magnitude in response to the spin change. This is equivalent to a magnetoresistan…
Studies of negative magnetoresistance in novel materials have recently been in the forefront of spintronic research. Here, we report an experimental observation of the temperature dependent negative magnetoresistance in Bi2Te3 topological insulator (TI) nanowires at ultralow temperatures (20 mK). We find a crossover from negative to positive magnetoresistance while increasing temperature under longitudinal magnetic field. We observe a large negative magnetoresistance which reaches -22% at 8T. The interplay between negative and positive magnetoresistance can be understood in terms of the compet…
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which …
A large negative magnetoresistance is anticipated in topological semimetals in the parallel magnetic and electric field configuration as a consequence of the nontrivial topological properties. The negative magnetoresistance is believed to demonstrate the chiral anomaly, a long-sought high-energy physics effect, in solid-state systems. Recent experiments reveal that Cd3As2, a Dirac topological semimetal, has the record-high mobility and exhibits positive linear magnetoresistance in the orthogonal magnetic and electric field configuration. However, the negative magnetoresistance in the parallel …
We report quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$. The band structure shows several narrow bands with nearly linear energy dispersion and Dirac-cone-like points at the Fermi level. The quantum oscillation experiments revealed one quasi-two-dimensional Fermi pocket and another complex pocket with small cyclotron resonant mass. The in-plane transverse magnetoresistance exhibits a crossover at a critical field $B^*$ from semiclassical weak-field $B^2$ dependence to the high-field unsaturated linear magnetoresistance which is attributed to the quantum limit…
We analyze the interplay between disorder and band structure in current perpendicular to the planes (CPP) giant magnetoresistance (GMR). We consider finite magnetic multilayers attached to pure crystalline leads, described by a tight-binding simple cubic two-band model (s-d). Several models of disorder are considered, including random on-site potentials, lattice distortions, impurities, vacancies, and cross-section fluctuations. Magneto-transport properties are calculated in the zero-temperature zero-bias limit, within the Landauer-Buttiker formalism. Using a very efficient numerical scatterin…
When a three-dimensional (3D) ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall conductance. The recent realization of this phenomenon - the quantum anomalous Hall effect - provides a conceptually new platform for studies of edge-state transport, distinct from the more extensively studied integer and fractional quantum Hall effects that arise from Landau level formation. An important question arises in this context: how do these 1D…
We study the magnetoresistance, δρ_{xx}(B)/ρ_0, of a high-mobility 2D electron gas in the domain of magnetic fields, B, intermediate between the weak localization and the Shubnikov-de Haas oscillations, where δρ_{xx}(B)/ρ_0 is governed by the interaction effects. Assuming short-range impurity scattering, we demonstrate that in the {\em second order} in the interaction parameter, $λ$, a {\em linear} B-dependence, δρ_{xx}(B)/ρ_0\sim λ^2ω_c/E_F with {\em temperature-independent} slope emerges in this domain of B (here ω_c and E_F are the cyclotron frequency and the Fermi energy, respectively). Un…
With the recent discovery of Weyl semimetals, the phenomenon of negative magnetoresistance (MR) is attracting renewed interest. While small negative MR can occur due to the suppression of spin scattering or weak localization, large negative MR is rare in materials, and when it happens, it is usually related to magnetism. The large negative MR in Weyl semimetals is peculiar in that it is unrelated to magnetism and comes from chiral anomaly. Here we report that there is a new mechanism for large negative MR which is not related to magnetism but is related to disorder. In the newly-synthesized bu…
The field dependence of interlayer magnetoresistance of the pressurized (to the normal state) layered organic metal $α$-(BEDT-TTF)$_{2}$KHg(SCN)$_{4}$ is investigated. The high quasi-two-dimensional anisotropy, when the interlayer hopping time is longer than the electron mean-free time and than the cyclotron period, leads to a dimensional crossover and to strong violations of the conventional three-dimensional theory of magnetoresistance. The monotonic field dependence is found to change from the conventional behavior at low magnetic fields to an anomalous one at high fields. The shape of Land…
We investigate the effect of the interlayer spin-flip tunneling for the interlayer magnetoresistance under magnetic fields in alpha-(BEDT-TTF)2I3, which is a multilayer massless Dirac fermion system under pressure. The mean field of the spin-flip correlation associated with the interlayer Coulomb interaction enables the interlayer spin-flip tunneling. Assuming the non-vertical interlayer spin-flip tunneling, we calculate the interlayer magnetoresistance using the Kubo formula. The crossover magnetic field, at which the interlayer magnetoresistance changes from positive to negative is shifted b…
We report the magnetoresistance, magnetothermopower and quantum oscillation study of Sb$_2$Te$_2$Se single crystal. The in-plane transverse magnetoresistance exhibits a crossover at a critical field $B^*$ from semiclassical weak-field $B^2$ dependence to the high-field unsaturated linear magnetoresistance which persists up to the room temperature. The low-temperature Seebeck coefficient is negative in zero field contrary to the positive Hall resistivity, indicating the multiband effect. The magnetic field induced the sign reversion of the Seebeck coefficient between 2 K and 150 K, . The quantu…
We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature revealed negative magnetoresistances (MRs) (up to 28%) for modest magnetic fields (250 mT) applied within the IrO2 a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of MR shows a crossover from four-fold to two-fold symmetry in response to an increasing mag…
We report on the angular and field dependence of the magnetoresistance (MR) in bilayers of Pt/EuO_{1-x} thin films, measured in both in-plane and out-of-plane geometries at different temperatures (T). Presence of oxygen vacancies manifested by a metal-insulator transition as well as a high-T ferromagnet to paramagnet transition (T_P) were observed in the bilayers. The Anisotropic Magnetoresistance (AMR) could be extracted in the entire T-range, even above T_P, exhibiting two sign crossovers. We attribute its T-evolution to the rotation of easy axis direction from a high-T out-of-plane to a low…
We report magneto-transport studies of topological insulator Bi_{2}Te_{3} thin films grown by pulsed laser deposition. A non-saturating linear-like magneto-resistance (MR) is observed at low temperatures in the magnetic field range from a few Tesla up to 60 Tesla. We demonstrate that the strong linear-like MR at high field can be well understood as the weak antilocalization phenomena described by Hikami-Larkin-Nagaoka theory. Our analysis suggests that in our system, a topological insulator, the elastic scattering time can be longer than the spin-orbit scattering time. We briefly discuss our r…
Colossal Magnetoresistance and Phonon Driven Exchange Dynamics in Eu$_5$Sn$_2$As$_6$
University of Tokyo（东京大学）；University of California, Berkeley（加州大学伯克利分校）；Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室）；National High Magnetic Field Laboratory, Los Alamos National Laboratory（洛斯阿拉莫斯国家实验室国家高磁场实验室）；Molecular Foundry, Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室分子发现中心）；Physikalisch-Technische Bundesanstalt（德国物理技术联邦研究院）
We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, wi…
Temperature dependence of the electronic structure of SmB6 is studied by high-resolution ARPES down to 1 K. We demonstrate that there is no essential difference for the dispersions of the surface states below and above the resistivity saturating anomaly (~ 3.5 K). Quantitative analyses of the surface states indicate that the quasi-particle scattering rate increases linearly as a function of temperature and binding energy, which differs from Fermi-Liquid behavior. Most intriguingly, we observe that the hybridization between the d and f states builds gradually over a wide temperature region (30 …
We investigate the effects of magnetic and electric fields on electron wavefunction interactions in single walled carbon nanotube bundles. The magnetoresistance measurements performed at 4.2K and the dependence of the data upon the electric field, obtained by varying the bias current through the samples, reveal good agreement with weak localization theory. Recording current-voltage characteristics at different temperatures we find an ohmic non-ohmic transition which disappears above 85K. Conductance vs temperature measurements are also well explained in the framework of weak localization theor…
The longitudinal interlayer magnetoresistance $R_{zz}(B_{z})$ is calculated in strongly anisotropic layered metals, when the interlayer band width $4t_{z}$ is less than the Landau level separation $\hbar ω_{c}$. The impurity scattering has much stronger effect in this regime than in 3D metals and leads to a linear longitudinal interlayer magnetoresistance $R_{zz}\propto B_{z}$ in the interval $\hbar ω_{c}>4t_{z}>>\sqrt{Γ_{0}\hbar ω_{c}}$ changing to a square-root dependence $R_{zz}\propto B_{z}^{1/2}$ at higher field or smaller $t_{z}$. The crossover field allows to estimate the interlayer tra…
We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization the observed temperature-dependent parabolic magnetoresistivity (MR) is a manifestation of the electron-electron interaction (EEI). We can consistently describe the data with a model for diffusive (magneto)transport that also includes magnetic-field dependent effects originating from ballistic time scales. We find an excellent agreement between the experimentally observed temperature dependence of MR and th…
We study the quantum interference correction to the conductivity in HgTe quantum wells using the Bernevig-Hughes-Zhang model. This model consists of two independent species (blocks) of massive Dirac fermions. We describe the crossover between the orthogonal and symplectic classes with the increasing the carrier concentration and calculate, respectively, weak localization and antilocalization corrections in the absence of the block mixing and assuming the white-noise disorder within each block. We have calculated the interference-induced magnetoresistance in a wide interval of magnetic fields, …
The angle-dependent interlayer magnetoresistance of the layered organic metal $α$-(BEDT-TTF)$_2$KHg(SCN)$_4$ is found to undergo a dramatic change from the classical conventional behavior at low magnetic fields to an anomalous one at high fields. This field-induced crossover and its dependence on the sample purity and temperature imply the existence of two parallel channels in the interlayer transport: a classical Boltzmann conductivity $σ_{c}$ and an incoherent channel $σ_{i}$. We propose a simple model for $σ_{i}$ explaining its metallic temperature dependence and low sensitivity to the inpl…
The effect of a spatially modulated magnetic field on the weak localization phenomenon in two-dimensional electron gas (2DEG) is studied. Both the dephasing time $τ_H$ and magnetoresistance are shown to reveal a nontrivial behavior as functions of the characteristics of magnetic field profiles. The magnetic field profiles with rather small spatial scales $d$ and modulation amplitudes $H_0$ such that $H_0d^2\ll\hbar c/e$ are characterized by the dephasing rate $τ_H^{-1}\propto H_0^2d^2$. The increase in the flux value $H_0d^2$ results in a crossover to a standard linear dependence $τ_H^{-1}\pro…
Observation of linear magnetoresistance and planar Hall effect in the Dirac semimetal PdTe
Institute of Nano Science and Technology（印度纳米科学与技术研究所）；Indian Institute of Science Education and Research Mohali（印度科学教育研究学院莫哈利分校）；Indian Institute of Technology Ropar（印度技术学院罗帕尔分校）
