硫族化合物Bi $_2$ Se $_3$在应变和微应变的影响下可以达到三维（3D）狄拉克半金属态。本文报道了Bi $_2$ Se $_3$晶体中大线性磁电阻的存在。磁阻在低场下呈二次型，在4T以上则呈线性。磁阻的温度依赖性与载流子迁移率成比例，交叉场与迁移率的倒数成比例。我们的分析表明，在我们的系统中的线性磁电阻具有经典的起源，并从高迁移率的3D狄拉克电子从晶体的不均匀性的散射。我们观察到带电的硒空位被高迁移率的狄拉克电子强烈屏蔽，中性晶体缺陷是输运机制的主要散射中心。我们的分析表明，电阻率和磁电阻有其起源的载流子从中性缺陷的散射。
英文摘要：
The chalcogenide Bi$_2$Se$_3$ can attain the three dimensional (3D) Dirac semimetal state under the influence of strain and microstrain. Here we report the presnece of large linear magnetoresistance in such a Bi$_2$Se$_3$ crystal. The magnetoresistance has quadratic form at low fields which crossovers to linear above 4 T. The temperature dependence of magnetoresistance scales with carrier mobility and the crossover field scales with inverse of mobility. Our analysis suggest that the linear magnetoresistance in our system has a classical origin and arises from the scattering of high mobility 3D Dirac electrons from crystalline inhomogeneities. We observe that the charged selenium vacancies are strongly screened by high mobility Dirac electrons and the neutral crystalline defects are the main scattering center for transport mechanism. Our analysis suggests that both the resistivity and the magnetoresistance have their origin in scattering of charge carriers from neutral defects.
We report on a method by which we can systematically extract spectroscopic information such as isotropic electron-nuclear hyperfine coupling constants from near-zero field magnetoresistance spectra. The method utilizes a least squares fitting of models developed from the stochastic quantum Liouville equation. We applied our fitting algorithm to two distinct material systems: Si/SiO2 MOSFETs, and a-Si:H MIS capacitors. Our fitted results and hyperfine parameters are in reasonable agreement with existing knowledge of the defects present in the systems. Our work indicates that the NZFMR response …
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured by the presence of the extended one-dimensional defects, such as screw dislocations or static charge stripes. We demonstrate that accounting for the memory effect, that is the capture of electrons on collisionless spiral trajectories winding around extended defects, leads to the strong negative magnetoresistance in case when the external magnetic field direc…
Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effect of point defects inevitably present in mechanically exfoliated hBN on the tunnel magnetoresistance of Co-hBN-NiFe MTJs. We observe a clear enhancement of both the conductance and magnetoresistance o…
While the Berezinskii-Kosterlitz-Thouless transition (BKT) has been under intense scrutiny for decades, unambiguous experimental signatures in magnetic systems remain elusive. Here, we investigate the interplay between electronic and magnetic degrees of freedom near the BKT transition. Focusing on a metal with easy-plane ferromagnetic order, we establish a framework that accounts both for the coupling between the charge current and the flow of topological magnetic defects and for electron scattering on their inhomogeneous spin texture. We show that electron scattering is responsible for a temp…
The competition between intrinsic disorder in superconducting YBa$_{2}$Cu$_{3}$O$_{7-δ}$ (YBCO) thin films and an ultradense triangular lattice of cylindrical pinning centers spaced at 30 nm intervals results in an ordered Bose glass phase of vortices. The samples were created by scanning the focused beam of a helium-ion microscope over the surface of the YBCO thin film to form columns of point defects where superconductivity was locally suppressed. The voltage-current isotherms reveal critical behavior and scale in the vicinity of the second-order glass transition. The latter exhibits a disti…
We present a general stochastic Liouville theory of electrical transport across a barrier between two conductors that occurs via sequential hopping through a single defect's spin-0 to spin-1/2 transition. We find magneto-conductances similar to Hanle features (pseudo-Hanle features) that originate from Pauli blocking without spin accumulation, and also predict that evolution of the defect's spin modifies the conventional Hanle response, producing an inverted Hanle signal from spin center evolution. We propose studies in oblique magnetic fields that would unambiguously determine if a magnetocon…
The viability of past, current and future devices for information technology hinges on their sensitivity to the presence of impurities. The latter can lead to resistivity anomalies, the so-called Kondo effect, reshape extrinsically Hall effects or reduce the efficiency of magnetoresistance effects essential in spintronics. Here we demonstrate that atomic defects enable highly efficient all-electrical detection of spin-swirling textures, in particular magnetic skyrmions, which are promising bits candidates in future spintronics devices. Impurities amplify the bare transport signal and can alter…
Graphene grown epitaxially on SiC, close to the charge neutrality point (CNP), in an orthogonal magnetic field shows an ambipolar behavior of the transverse resistance accompanied by a puzzling longitudinal magnetoresistance. When injecting a transverse current at one end of the Hall bar, a sizeable non local transverse magnetoresistance is measured at low temperature. While Zeeman spin effect seems not to be able to justify these phenomena, some dissipation involving edge states at the boundaries could explain the order of magnitude of the non local transverse magnetoresistance, but not the a…
Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observed pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show …
A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both electric field (current) and magnetic field. The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to peculiar spin-orbit defects. The proposed mechanism is compared to that based on a Fermi surface warping, and is shown to be dominant at lower Fermi energies. We p…
We have measured magnetoresistance of suspended graphene in the Corbino geometry at magnetic fields up to $B=0.15\,$T, i.e., in a regime uninfluenced by Shubnikov-de Haas oscillations. The low-temperature relative magnetotoresistance $[R(B)-R(0)]/R(0)$ amounts to $4000 B^2\% $ at the Dirac point ($B$ in Tesla), with a quite weak temperature dependence below $30\,$K. A decrease in the relative magnetoresistance by a factor of two is found when charge carrier density is increased to $|n| \simeq 3 \times 10^{-10}$ cm$^{-2}$. The gate dependence of the magnetoresistance allows us to characterize t…
We study spatial photoluminescence characteristics of neutral and charged excitons across extended monolayer MoS$_2$ synthesized by chemical vapor deposition. Using two-dimensional hyperspectral photoluminescence mapping at cryogenic temperatures we identify regions with increased emission from charged excitons associated with both spin-orbit split valence subbands. Such regions are attributed to unintentional doping at defect sites with excess charge that bind neutral excitons to form defect-pinned trions. Our findings imply comparable timescales for the formation, relaxation, and radiative d…
An H atom inserted into hydrogen monolayer on the Si(100)-2x1 surface has been studied using the density functional theory. Hydrogen-induced defects were considered in their neutral, negative, and positive charge states. It was found that hydrogen atom forms a dihydride unit on the surface in the most stable neutral and negative charge states. Hydrogen located in the groove between dimer rows and bonded with a second-layer Si atom is also one of the most stable negative charge states. In the positive charge state, hydrogen forms a three-center bond inside a Si dimer, Si-H-Si, similar to the bu…
Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV0 centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign the…
Radiation-induced magnetotransport in high-mobility two-dimensional systems: Role of electron heating
本文用平衡方程方法分析了微波辐射对磁电阻的影响，该方法考虑了高迁移率二维系统中的朗道能级间和朗道能级内的过程，并考虑了光子辅助电子跃迁和辐射引起的电子分布变化。短程散射由于背景杂质和缺陷被证明是占主导地位的直接贡献者的光阻振荡。电子温度表征系统加热由于照射，通过平衡从辐射场的能量吸收和能量耗散到晶格通过现实的电子-声子耦合，表现出共振振荡。Shubnikov de Haas振荡幅度的微波调制与微波诱导的电阻振荡一起产生，与实验结果一致。此外，在较高的磁场侧的低频辐射引起的磁阻的抑制也被证明。
