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arXiv 1805.08473cond-mat.str-el
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SrIrO3薄膜的结构特性和各向异性电子输运

Structural properties and anisotropic electronic transport in SrIrO3 films

K. R. Kleindienst, K. Wolff, J. Schubert, R. Schneider, D. Fuchs

摘要:

在不同衬底材料上外延生长的厚度约为60 nm的SrIrO 3(SIO)薄膜显示出接近应变释放的状态。在(110)DyScO_3(DSO)上生长的薄膜具有非孪晶块状正交结构。然而,在立方(001)SrTiO 3上的膜沉积诱导SIO的孪晶生长。SIO薄膜的电阻测量结果表明,电阻R随温度T的降低而增加,温度依赖性很弱。霍尔测量表明,占主导地位的类电子输运在整个温度范围从2 K到300 K。在2 K时,STO上SIO的电子浓度和电阻率为ne = 1.4*10^20 cm-3和1 mohmcm。有趣的是,非孪晶SIO在DSO上沿[1-10]和[001]方向的膜电阻相差高达25%,表明明显的各向异性电子输运。电阻的各向异性随温度的降低而增大,在86 K附近出现一个明显的最大值。特定的T依赖性类似于体SIO的结构各向异性sqrt(a2+b2)/c。因此,SIO中的各向异性电子输运很可能是由正交畸变引起的。因此,对于孪晶SIO膜,STO各向异性几乎完全消失。实验结果表明,结构的变化很可能是负责观察到的各向异性电子输运。SIO薄膜中的电子输运的强灵敏度可以解释为SIO中的窄电子带由自旋轨道耦合和正交畸变引起。

英文摘要:

Perovskite SrIrO3 (SIO) films epitaxially deposited with a thickness of about 60 nm on various substrate materials display nearly strain-relieved state. Films grown on orthorhombic (110) DyScO3 (DSO) are found to display untwinned bulk-like orthorhombic structure. However, film deposition on cubic (001) SrTiO3 induces a twinned growth of SIO. Resistance measurements on the SIO films reveal only weak temperature dependence, where the resistance R increases with decreasing temperature T. Hall measurements show dominant electron-like transport throughout the temperature range from 2 K to 300 K. At 2 K, the electron concentration and resistivity for SIO on STO amount to ne = 1.4*10^20 cm-3 and 1 mohmcm. Interestingly, the film resistance of untwinned SIO on DSO along the [1-10] and the [001] direction differs by up to 25% indicating pronounced anisotropic electronic transport. The anisotropy of the resistance increases with decreasing T and displays a distinct maximum around 86 K. The specific T-dependence is similar to that of the structural anisotropy sqrt(a2+b2)/c of bulk SIO. Therefore, anisotropic electronic transport in SIO is very likely induced by the orthorhombic distortion. Consequently, for twinned SIO films on STO anisotropy vanishes nearly completely. The experimental results show that structural changes are very likely responsible for the observed anisotropic electronic transport. The strong sensitivity of the electronic transport in SIO films may be explained in terms of the narrow electron-like bands in SIO caused by spin-orbit-coupling and orthorhombic distortion.

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