拓扑绝缘体（TI）的面外和面内磁导（MC）研究是研究拓扑表面态（TSS）弱反局域化（WAL）响应的一种实验方法。然而，除了上述的WAL响应，弱本地化（WL）的贡献，从导电体状态也被称为共存，并有助于整体MC;一项研究，到目前为止，受到了有限的关注。本文通过系统分析Bi $_2$ Se $_3$薄膜的电导率随温度和磁场的变化关系，准确地提取了上述WL贡献。为了准确的分析，我们量化的电子-电子相互作用的测量MC这是经常被忽略在最近的WAL研究的贡献。此外，我们表明，WAL效应所产生的TSS与有限的穿透深度，为面外和面内磁场可以一起解释各向异性磁导（AMC），因此，研究AMC研究可以作为一个有用的技术来探测参数，如相位相干长度和穿透深度，在3D TI中的TSS。我们还表明，在体无序的增加，实现了通过非晶SiO $_2$衬底上生长的薄膜，而不是结晶Al $_2$ O $_3$（0001），可以导致更强的退耦膜的顶部和底部表面状态之间。
英文摘要：
A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). However, in addition to the above WAL response, weak localization (WL) contribution from conducting bulk states are also known to coexist and contribute to the overall MC; a study that has so far received limited attention. In this article, we accurately extract the above WL contribution by systematically analyzing the temperature and magnetic field dependency of conductivity in Bi$_2$Se$_3$ films. For accurate analysis, we quantify the contribution of electron-electron interactions to the measured MC which is often ignored in recent WAL studies. Moreover, we show that the WAL effect arising from the TSSs with finite penetration depth, for out-of-plane and in-plane magnetic field can together explain the anisotropic magnetoconductance (AMC) and, thus, the investigated AMC study can serve as a useful technique to probe the parameters like phase coherence length and penetration depth that characterise the TSSs in 3D TIs. We also demonstrate that increase in bulk-disorder, achieved by growing the films on amorphous SiO$_2$ substrate rather than on crystalline Al$_2$O$_3$(0001), can lead to stronger decoupling between the top and bottom surface states of the film.
Anisotropic spin-density distribution and magnetic anisotropy of strained La$_{1-x}$Sr$_x$MnO$_3$ thin films: Angle-dependent x-ray magnetic circular dichroism
铁磁薄膜的磁各向异性是由衬底的外延应变通过应变诱导的轨道磁矩和自旋极化电子空间分布的各向异性引起的。然而，在铁磁金属La $_{1-x}$ Sr $_x$ MnO $_3$（LSMO）薄膜研究的X射线线性二色性（XLD）的优先轨道占领一直被发现的平面外的拉伸和压缩外延应变，因此无关的磁各向异性。为了解开这个谜团，我们直接探测自旋极化电子在LSMO薄膜中的优先轨道占领的角度相关的X射线磁性圆二色性（XMCD）的应变。自旋密度分布的各向异性被认为是在平面内的拉伸应变和平面外的压缩应变，与所观察到的磁各向异性。XLD观察到的普遍存在的面外优先轨道占据归因于表面磁死层中自旋向上和自旋向下的面外轨道的占据。
Single domain to multi-domain transition due to in-plane magnetic anisotropy in phase separated (La$_{0.4}$Pr$_{0.6}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$ thin films
相分离的钙钛矿锰氧化物具有具有不同晶体结构、磁性和电子性质的竞争相。因此，应变效应在决定锰氧化物薄膜的磁性方面起着关键作用。本文报道了各向异性应力对相分离锰氧化物（La $_{0.4}$ Pr $_{0.6}$）$_{0.67}$ Ca $_{0.33}$ MnO $_{3}$磁性的影响。在面内各向异性应力下在（110）NdGaOPDMATHABMQ衬底上生长的（$_{0.4}$ Pr $_{0.6}$）$_{0.67}$ Ca $_{0.33}$ MnO $_{3}$薄膜显示出面内磁各向异性和单畴到多畴转变随温度的变化。角度相关的磁化测量也表明，磁化反转发生主要是通过成核$&$传播机制。通过与在（001）SrLaGaOPDMATHABMS衬底上生长的（$_{0.4}$ Pr $_{0.6}$）$_{0.67}$ $_{0.33}$ MnO $_{3}$薄膜的比较，证实了磁各向异性主要是由衬底诱导的各向异性应力引起的。我们的研究结果提出了在纳米磁性介质中存储磁信息的新途径。
