arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2005.00304cond-mat.str-elcond-mat.mtrl-sci
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VO $_2$薄膜中电子和晶体结构的厚度依赖性:Mott-Peierls协同跃迁的抑制

Thickness dependence of electronic and crystal structures in VO$_2$ ultrathin films: suppression of the collaborative Mott-Peierls transition

D. Shiga, B. E. Yang, N. Hasegawa, T. Kanda, R. Tokunaga, K. Yoshimatsu, R. Yukawa, M. Kitamura, K. Horiba, H. Kumigashira

摘要:

通过${in~situ}$光电子能谱研究了在TiO $_2$(001)衬底上相干生长的尺寸可控VO $_2$薄膜的电子结构和晶体结构的变化。在纳米结构薄膜中,带状Peierls转变和Mott转变的不稳定性之间的平衡被控制为厚度的函数。VO $_2$厚膜中温度驱动的金属-绝缘体转变相关的特征光谱变化保持在1.5 nm(大致对应于沿[001]方向的五个V原子),而小于1.0 nm的VO $_2$膜表现出绝缘性质而没有V-V二聚化。这些结果表明,Mott不稳定性和带状Peierls不稳定性之间的微妙平衡在几个纳米尺度上受到了尺寸交叉效应和限制效应的调制,从而导致了PDMAVO $_2$薄膜复杂的电子相图.

英文摘要:

Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the balance between the instabilities of a bandlike Peierls transition and a Mott transition is controlled as a function of thickness. The characteristic spectral change associated with temperature-driven metal-insulator transition in VO$_2$ thick films holds down to 1.5 nm (roughly corresponding to five V atoms along the [001] direction), whereas VO$_2$ films of less than 1.0 nm exhibit insulating nature without V-V dimerization. These results suggest that the delicate balance between a Mott instability and a bandlike Peierls instability is modulated at a scale of a few nanometers by the dimensional crossover effects and confinement effects, which consequently induce the complicated electronic phase diagram of ultrathin VO$_2$ films.

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