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arXiv 1302.0918cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-con
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Sr2IrO4薄膜中通过外延应变调节电子结构

Tuning electronic structures via epitaxial strain in Sr2IrO4 thin films

J. Nichols, J. Terzic, E. G. Bittle, O. B. Korneta, L. E. De Long, J. W. Brill, G. Cao, S. S. A. Seo

摘要:

我们已经在各种衬底上合成了外延Sr2IrO4薄膜,并研究了它们的电子结构作为晶格应变的函数。在拉伸(压缩)应变,增加(减少)的Ir-O-Ir键角预计将导致增加(减少)的电子带宽。然而,我们已经观察到,两个光学吸收峰附近的0.5 eV和1.0 eV的拉伸(压缩)应变移动到更高(更低)的能量,表明电子相关能也受到影响的面内晶格应变。晶格修正下电子结构的有效调整为研究强自旋轨道耦合和电子关联共存的物理提供了重要的视角。

英文摘要:

We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structures as a function of lattice-strains. Under tensile (compressive) strains, increased (decreased) Ir-O-Ir bond-angles are expected to result in increased (decreased) electronic bandwidths. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to higher (lower) energies under tensile (compressive) strains, indicating that the electronic-correlation energy is also affected by in-plane lattice-strains. The effective tuning of electronic structures under lattice-modification provides an important insight into the physics driven by the coexisting strong spin-orbit coupling and electronic correlation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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