arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1709.06100cond-mat.mes-hallcond-mat.mtrl-sci
收藏

V $_{2}$ O $_{3}$ /Ni薄膜中生长诱导的面内单轴各向异性

Growth-Induced In-Plane Uniaxial Anisotropy in V$_{2}$O$_{3}$/Ni Films

Dustin A. Gilbert, Juan Gabriel Ramírez, Thomas Saerbeck, Juan Trastoy, Ivan K. Schuller, Kai Liu, Jose de la Venta

摘要:

我们报告的应变诱导和温度依赖的单轴各向异性V $_{2}$ O $_{3}$ /Ni混合薄膜,表现出通过界面应变和样品的微观结构,其后果的角度依赖的磁化反转。X-射线衍射和倒易空间图确定的V $_{2}$ O $_{3}$的面内晶轴;原子力和扫描电子显微镜揭示了在膜的微观结构中的取向裂缝。准静态磁力测量和动态铁磁共振测量确定一个单轴磁易轴沿裂缝。与在蓝宝石上生长的没有裂缝的膜的比较示出了来自V $_{2}$ O $_{3}$ /Ni膜中的应变和微结构的组合贡献。由角度相关的一阶反转曲线测量捕获的磁化反转特性表明沿着与裂口正交的方向的强畴壁钉扎,引起反转机制中的角度相关的变化。所得到的各向异性是可调的温度和在室温下是最明显的,这是有益的潜在的设备应用。

英文摘要:

We report on a strain-induced and temperature dependent uniaxial anisotropy in V$_{2}$O$_{3}$/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the V$_{2}$O$_{3}$; atomic force and scanning electron microscopy reveal oriented rips in the film microstructure. Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial magnetic easy axis along the rips. Comparison with films grown on sapphire without rips shows a combined contribution from strain and microstructure in the V$_{2}$O$_{3}$/Ni films. Magnetization reversal characteristics captured by angular-dependent first order reversal curve measurements indicate a strong domain wall pinning along the direction orthogonal to the rips, inducing an angular-dependent change in the reversal mechanism. The resultant anisotropy is tunable with temperature and is most pronounced at room temperature, which is beneficial for potential device applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑