Voltage-controlled magnetic anisotropy in antiferromagnetic MgO-capped MnPt films

研究MnPt3拓扑半金属中的本质异常霍尔效应

Investigating the intrinsic anomalous Hall effect in MnPt3 topological semimetal

通过磁化、电阻和霍尔电阻测量研究MnPt3薄膜的磁性和输运性质，发现其霍尔电导受磁性影响显著，本质 Berry 曲率机制主导异常霍尔效应，厚度增加使本质霍尔电导增强，表明应变可调节电子能带拓扑。

Stabilized Interfacial Ferromagnetism and Enhanced Magnetoelectric Properties of Ultrathin FeRh Films Capped with Heavy Transition Metal Ta

Thin FeRh film was extensively studied recently, and an emergent substrate- and capping-dependent interfacial ferromagnetism (FM) was widely observed in experiments. However, the voltage modulation of this interfacial ferromagnetism is barely studied, which would have profound applications in antiferromagnetic (AFM) FeRh-based magnetoelectric-random access memory (MeRAM). Using ab initio techniques, we comparatively study the interfacial ferromagnetic properties and magnetoelectric responses of ultrathin FeRh films capped by heavy transition metal Ta. We find that Ta capping reverses the phase…

Co2 FeAl thin films grown on MgO substrates: Correlation between static, dynamic and structural properties

Co2FeAl (CFA) thin films with thickness varying from 10 nm to 115 nm have been deposited on MgO(001) substrates by magnetron sputtering and then capped by Ta or Cr layer. X-rays diffraction (XRD) revealed that the cubic $[001]$ CFA axis is normal to the substrate and that all the CFA films exhibit full epitaxial growth. The chemical order varies from the $B2$ phase to the $A2$ phase when decreasing the thickness. Magneto-optical Kerr effect (MOKE) and vibrating sample magnetometer measurements show that, depending on the field orientation, one or two-step switchings occur. Moreover, the films …

Methods to induce perpendicular magnetic anisotropy in full-Heusler Co2FeSi thin layers in a magnetic tunnel junction structure

In this study, to obtain perpendicular magnetic tunnel junctions (p-MTJs) using half-metallic ferromagnets (HMFs), several methods were developed to induce perpendicular magnetic anisotropy (PMA) in full-Heusler Co2FeSi (CFS) alloy thin layers in an MTJ multilayer composed of a layered CFS/MgO/CFS structure. Oxygen exposure at 2.0 Pa for 10 min after deposition of the bottom CFS layer was effective for obtaining PMA in the CFS layer. One of the reasons for the PMA is the formation of nearly ideal CFS/MgO interfaces due to oxygen exposure before the deposition of the MgO layer. The annealing pr…