重过渡金属Ta包覆的超薄FeRh薄膜的界面铁磁性和磁电性能
Stabilized Interfacial Ferromagnetism and Enhanced Magnetoelectric Properties of Ultrathin FeRh Films Capped with Heavy Transition Metal Ta
摘要：
近年来，人们对FeRh薄膜进行了广泛的研究，并在实验中广泛观察到了一种依赖于衬底和帽盖的界面铁磁性。然而，这种界面铁磁性的电压调制几乎没有研究，这将在反铁磁（AFM）FeRh基磁电随机存取存储器（MeRAM）中有深远的应用。利用从头算方法，我们比较研究了重过渡金属Ta包覆的FeRh薄膜的界面铁磁性质和磁电响应。我们发现Ta的覆盖逆转了1.5 nm以下的FeRh薄膜的相稳定性，并使铁磁相和界面铁磁性稳定。此外，小的磁矩为2.2 $μ_B$的相邻的Fe原子，无论磁性配置和膜厚度，诱导Ta盖帽。与FeRh/MgO双层膜相比，三层膜的磁各向异性（AFM的面内磁各向异性、FM和界面FM重构三层膜的垂直磁各向异性）和磁电响应均有所增强。此外，在FM相位中的VCMA行为从$\vee$形变为线性。研究结果表明，重金属包覆和电场对FeRh薄膜的磁有序性有明显的调控作用，对FeRh合金在磁存储和反铁磁自旋电子学中的应用具有重要的推动作用。
英文摘要：
Thin FeRh film was extensively studied recently, and an emergent substrate- and capping-dependent interfacial ferromagnetism (FM) was widely observed in experiments. However, the voltage modulation of this interfacial ferromagnetism is barely studied, which would have profound applications in antiferromagnetic (AFM) FeRh-based magnetoelectric-random access memory (MeRAM). Using ab initio techniques, we comparatively study the interfacial ferromagnetic properties and magnetoelectric responses of ultrathin FeRh films capped by heavy transition metal Ta. We find that Ta capping reverses the phase stability of ultrathin FeRh film below 1.5 nm and gigantically stabilizes the ferromagnetic phase and interfacial ferromagnetism. Besides, small magnetic moment of 2.2 $μ_B$ for neighboring Fe atoms, regardless of magnetic configurations and film thickness, is induced by Ta capping. Compared with FeRh/MgO bilayers, magnetic anisotropies (in-plane for AFM, perpendicular for FM and interfacial-FM reconstructed trilayers) and magnetoelectric responses of these trilayers are enhanced. Furthermore, the VCMA behavior in FM phase is changed from $\vee$-shaped to linear. These findings demonstrate the manipulation of magnetic ordering of FeRh films with heavy metal capping and electric field and can promote the application of FeRh alloy in magnetic memory and antiferromagnetic spintronics.
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