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arXiv 0802.4400cond-mat.mes-hall
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(Ga,Mn)As磁各向异性的详细输运研究

Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As

K. Pappert, C. Gould, M. Sawicki, J. Wenisch, K. Brunner, G. Schmidt, L. W. Molenkamp

摘要:

本文讨论了研究(Ga,Mn)As磁各向异性的输运方法。不同的各向异性类型的典型磁阻行为进行了讨论,重点是深入讨论的各向异性指纹技术,并将其扩展到主要是单轴磁各向异性层。我们发现,在所有的(Ga,Mn)As薄膜研究,三个各向异性组件始终存在。沿[100]和[010]晶向的主要双轴分量以及沿[110]和[010]晶向的两个单轴分量经常被单独报道。各种指纹的典型的(Ga,Mn)作为输运样品在4 K的,以说明这些各向异性项的相对强度的变化。我们进一步研究的温度依赖性的磁各向异性和畴壁形核能的帮助下的指纹方法。

英文摘要:

This paper discusses transport methods for the investigation of the (Ga,Mn)As magnetic anisotropy. Typical magnetoresistance behaviour for different anisotropy types is discussed, focusing on an in depth discussion of the anisotropy fingerprint technique and extending it to layers with primarily uniaxial magnetic anisotropy. We find that in all (Ga,Mn)As films studied, three anisotropy components are always present. The primary biaxial along ([100] and [010]) along with both uniaxial components along the [110] and [010] crystal directions which are often reported separately. Various fingerprints of typical (Ga,Mn)As transport samples at 4 K are included to illustrate the variation of the relative strength of these anisotropy terms. We further investigate the temperature dependence of the magnetic anisotropy and the domain wall nucleation energy with the help of the fingerprint method.

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